Effect of interaction between AC electric field and phonon oscillation of metal cluster on tip-growth of carbon nanotube

The paper reports effect of interaction between AC electric field and metal cluster sitting at tip end of the carbon nanotube (CNT) on CNT tip-growth in CVD theoretically. For this purpose, a theoretical model based on phonon oscillations of the metal catalyst and influence of AC electric field on these oscillations is presented. Results show that there is an optimum AC electric field which optimizes growth of ultra-long CNTs. Then it is demonstrated that, in comparison with CNTs in the absence of field, CNTs under optimum electric field grow more. In addition, relation between optimum temperature and amplitude of AC electric field is investigated and it is shown that increasing electric field leads to higher optimum temperature. Finally, Investigation of effect of catalyst type on optimum electric field demonstrates the optimum field for various catalysts is different due to their different characteristics including van der Waals interaction with carbon, atomic mass and number of free charge carriers per each atom. All results are discussed and interpreted.     

Selective growth of carbon nantoubes on SiO2/Si substrate

Three-step raising temperature process was employed to fabricate carbon nanotubes by pyrolysis of ferrocene/melamine mixtures on silica and single crystalline silicon wafers respectively. Then the morphologies, structures and compositions of obtained carbon nanotubes are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscope (EDX) and electron energy-loss spectroscopy (EELS). TEM and SEM observation shows that on silica substrate, high-oriented carbon nanotube can grow compactly to form continuous film on both frontal and cross-section surfaces, but on silicon substrate, only can form on cross-section surface. These carbon nanotubes have much irregular cup-like structure, and with outer diameter varying from 25 nm to 35 nm. At the top end of carbon nanotube there is a catalyst particle. EDX analysis reveals that the particle are iron cluster, and EELS spectrum indicates that the nanotube is composed of pure carbon. Finally, the effect of substrate surface roughness on the growth behavior of carbon nanotubes has been discussed.     

Modulating the diameter of carbon nanotubes in array form via floating catalyst chemical vapor deposition

Based on the analysis of catalyst particle formation and carbon nanotube (CNT) array growth process in floating catalyst chemical vapor deposition (CVD), delicately controlled gaseous carbon sources and catalyst precursors were introduced into the reactor for the controllable growth of CNT array. The low feeding rate of ferrocene was realized through low-temperature sublimation. With less ferrocene introduced into the reactor, the collision among the in situ formed iron atoms decreased, which led to the formation of smaller catalyst particles. The mean diameter of the CNT array, grown at 800^oC, decreased from 41 to 31 nm when the ferrocene-sublimed temperature reduced from 80 to 60^oC. Furthermore, low growth temperature was adopted in synthesis, through the modulation of the CNT diameter, by controlling the sintering of catalyst particles and the collision frequency. When the growth temperature was 600^oC, the as-grown CNTs in the array were with a mean diameter of 10.2 nm. If propylene was used as carbon source, the diameter can be modulated in similar trends. The diameter of CNT can be modulated by the parameter of the operation using the same substrate and catalyst precursor without other equipment or previous treatment. Those results provide the possibility for delicately controllable synthesis of CNT array via simple floating catalyst CVD.     

Hydrogen-free spray pyrolysis chemical vapor deposition method for the carbon nanotube growth: Parametric studies

Spray pyrolysis chemical vapor deposition (CVD) in the absence of hydrogen at low carrier gas flow rates has been used for the growth of carbon nanotubes (CNTs). A parametric study of the carbon nanotube growth has been conducted by optimizing various parameters such as temperature, injection speed, precursor volume, and catalyst concentration. Experimental observations and characterizations reveal that the growth rate, size and quality of the carbon nanotubes are significantly dependent on the reaction parameters. Scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy techniques were employed to characterize the morphology, structure and crystallinity of the carbon nanotubes. The synthesis process can be applied to both semiconducting silicon wafer and conducting substrates such as carbon microfibers and stainless steel plates. This approach promises great potential in building various nanodevices with different electron conducting requirements. In addition, the absence of hydrogen as a carrier gas and the relatively low synthesis temperature (typically 750 °C) qualify the spray pyrolysis CVD method as a safe and easy way to scale up the CNT growth, which is applicable in industrial production.     

Monitoring structural defects and crystallinity of carbon nanotubes in thin films

We report the influence of catalyst formulation and reaction temperature on the formation of carbon nanotube (CNT) thin films by the chemical vapour deposition (CVD) method. Thin films of CNTs were grown on Fe-Mo/Al₂O₃-coated silicon wafer by thermal decomposition of methane at different temperatures ranging from 800 to 1000°C. The electron microscopic investigations, SEM as well as HRTEM, of the as-grown CNT thin films revealed the growth of uniform multi-walled CNTs in abundance. The intensity ratio of D-band to G-band and FWHM of G-band through Raman measurements clearly indicated the dependency of structural defects and crystallinity of CNTs in thin films on the catalyst formulation and CVD growth temperature. The results suggest that thin films of multi-walled CNTs with negligible amount of defects in the nanotube structure and very high crystallinity can be obtained by thermal CVD process at 925°C.     

锂离子进入碳纳米管端口速度的分子动力学模拟

锂离子进入碳纳米管端口的速度V Li是影响锂离子电池充电性能的重要因素.采用分子动力学模拟方法,研究了直径、温度、电场强度和端口改性官能团四种因子对其影响.运用正交实验方法,分析得出了各因子及其不同水平的影响规律.结果表明,四种因子的影响力度由大到小依次为:电场强度、官能团类型、碳纳米管直径和温度.在本文的模拟条件下,随着电场强度和碳纳米管直径的增大,V Li逐渐增加,且在电场强度下的增幅会更显著;碳纳米管端口官能团分别改性为氢原子(—H),羟基(—OH),氨基(—NH2)以及羧基(—COOH)时,V Li会逐步降低;随着温度的增大,V Li先增加后减小,但整体波动偏幅不大.     

温度对单壁碳纳米管端口结构的影响

利用紧束缚势分子动力学模拟方法，研究了温度在2000—3500 K之间单壁碳纳米管端口结构的变化趋势.研究表明，温度对整个管端口结构起关键作用，计算表明温度在3000K和3500K下碳管两端口在15ps时间尺度内依次闭合，温度高易于使理想单壁碳管端口封闭，且端口封闭导致碳管系统能量的降低.由于Armchair型碳纳米管与相同半径的Zigzag型碳纳米管相比有相对低的应力能，导致Armchair型碳纳米管更易形成端口封闭的结构. 关键词： 碳纳米管 紧束缚势     

化学气相沉积法制备定向碳纳米管阵列

以二茂铁和二甲苯分别作为催化剂和碳源，采用一种无模板的化学气相沉积法，使用单温炉设备，成功地制备了高度定向的碳纳米管阵列.分别用扫描电子显微镜、透射电子显微镜和电子能量散射谱、拉曼光谱对碳纳米管阵列进行形貌观察和表征, 并研究了不同工艺参数对碳纳米管阵列形貌的影响.结果表明：在生长温度为800℃，催化剂浓度为0.02g/mL，抛光硅片上容易获得高质量的定向碳纳米管阵列，在此优化条件下生长的定向碳纳米管的平均生长速率可达25μm/min.     

Comparative study on diameter distribution of single-walled carbon nanotubes using growth templates with different pore sizes: Zeolite-L,ZSM-5, and MCM-41

We report a comparative study on diameter distribution of single-walled carbon nanotubes (SWNTs) grown using nanoporous templates having different pore sizes, namely, zeolite-L, ZSM-5, and MCM-41. The change in the tube diameter based on catalytic film thickness and growth temperature was systematically investigated. We prepared very thin Fe catalyst films with nominal thicknesses of 0.5, 0.7, 1, and 2 Å, and the growth temperature was varied from 850 to 925 °C. We found that the SWNT mean diameter and size distribution width decreased with decreasing catalyst film thickness, growth temperature, and pore sizes of the templates. In addition, all SWNTs grown from the nanoporous templates have narrower diameter distribution compared to the SWNTs grown from SiO₂ planar surface. The obtained results are straightforward and suggest that the template growth has potential for SWNT growth with very narrow diameter distribution.     

Aligned growth and alignment mechanism of carbon nanotubes by hot filament chemical vapor deposition

Carbon nanotubes (CNTs) growth on Inconel sheets was carried out using hot filament chemical vapor deposition (HFCVD) in a gas mixture of methane and hydrogen. Scanning electron microscopy, transmission electron microscopy and field electron emission (FEE) measurement were applied to study the structure and FEE properties of the deposited CNTs. The effect of bias voltage and substrate surface roughness on the growth of vertically aligned carbon nanotubes was investigated. Well-aligned CNTs were synthesized by bias enhanced HFCVD. The results show that a bias of −500 V generates the best alignment. It has been observed that at the early growth stage, aligned and non-aligned CNTs are growing simultaneously on the unscratched sheets, whereas only aligned CNTs are growing on the scratched sheets. The results indicate that tip growth is not necessary for the electric field to align the CNTs, and larger catalyst particles created by scratching before the heat treatment can induce alignment of CNTs at the early growth stage. In addition, tree-like CNTs bundles grown on the scratched substrates exhibit better FEE performances than dense carbon nanotube forest grown on the unscratched substrates due to the reduced screen effect.     

Reactor scale modeling of multi-walled carbon nanotube growth

As the mechanisms of carbon nanotube (CNT) growth becomes known, it becomes important to understand how to implement this knowledge into reactor scale models to optimize CNT growth. In past work, we have reported fundamental mechanisms and competing deposition regimes that dictate single wall carbon nanotube growth. In this study, we will further explore the growth of carbon nanotubes with multiple walls. A tube flow chemical vapor deposition reactor is simulated using the commercial software package COMSOL, and considered the growth of single- and multi-walled carbon nanotubes. It was found that the limiting reaction processes for multi-walled carbon nanotubes change at different temperatures than the single walled carbon nanotubes and it was shown that the reactions directly governing CNT growth are a limiting process over certain parameters. This work shows that the optimum conditions for CNT growth are dependent on temperature, chemical concentration, and the number of nanotube walls. Optimal reactor conditions have been identified as defined by (1) a critical inlet methane concentration that results in hydrogen abstraction limited versus hydrocarbon adsorption limited reaction kinetic regime, and (2) activation energy of reaction for a given reactor temperature and inlet methane concentration. Successful optimization of a CNT growth processes requires taking all of those variables into account.     

Possible role of charge transport in enhanced carbon nanotube growth

We consider the role of electric fields during metal-catalysed thermal chemical vapour deposition growth of carbon nanotubes and show that enhanced growth occurs from a negatively biased electrode. An electric field, applied externally to the growing tubes and/or generated as a result of electron emission or self-biasing, may strongly affect the carbon supply through the catalyst nanoparticle, enhancing the growth rate. Different aspects of the growth process are analysed: the nature of the nanoparticle catalysis, carbon dissolution kinetics, electron emission from the nanotube tips, charge transport in the nanotube–catalytic nanoparticle system and carbon drift and diffusion through the catalyst under the action of the electric field. A fundamental tenet for modelling of charge-transport dynamics during the nanotube growth process is proposed. PACS 81.07.De; 81.15.Gh     

Controllable growth of individual, uniform carbon nanotubes by thermal chemical vapor deposition

We report on the controllable growth of individual, uniform carbon nanotubes using thermal chemical vapor deposition (CVD). We performed a detailed study of the various factors influencing the growth of single nanotubes. In particular, we investigated the role played by catalyst layer thickness, catalyst dot size, deposition temperature, and gas source pressure on the growth process of straight, single nanotubes. Straight, individual nanotubes with uniform diameter can be obtained by decomposition of 0.1 mbar of acetylene at a temperature of 800 °C over a 5 nm thick nickel film that is patterned into square dots with dimensions below 500 nm. We compare the performance of thermal CVD and of plasma enhanced CVD for growing individual nanotubes.     

Effective synthesis of carbon nanotubes via catalytic decomposition of methane: Influence of calcination temperature on metal–support interaction of Co–Mo/MgO catalyst

The present work investigated the influence of calcination temperature for bimetallic Co–Mo/MgO catalyst on the synthesis of carbon nanotubes (CNTs) via catalytic chemical vapor deposition (CCVD) of methane. The experimental results showed that variation in the catalyst calcination temperature affected carbon yield, diameter distribution and quality of the CNTs. Increasing the catalyst calcination temperature enabled Co–Mo/MgO catalysts in growing CNTs at higher yield, narrower diameter distribution and better degree of graphitization, credited to the strong metal–support interaction (MSI) formed between CoO species and MgO support. We also discovered that the catalysts of weak MSI were beneficial to the nucleation and growth of CNTs, meanwhile the catalysts with strong MSI provoked the growth of CNTs with narrow diameter distribution. The catalyst calcined at 700 °C, possessing moderate MSI, was found to be the most suitable catalyst for the growth of high quality CNTs with the diameter of 7.70±0.77 nm and the carbon yield of as high as 647.4%.     

New method and experimental setup for visual positioning of nanocontacts

A new method and original experimental setup for visualizing nanoobjects are presented. The setup developed makes it possible to obtain a shadow nanoobject image on a luminescence screen with a magnification of 10⁶, ensure real visualization of carbon nanotube nucleation and growth, and provide controlled positioning of nanocontacts within 0.2–0.4 nm. An example of positioning of a cantilever tip with respect to a carbon nanotube spiral end is considered.     

Polaron effects on the thermal conductivity of zigzag carbon nanotubes

Thermal conductivity of metallic zigzag carbon nanotube is investigated in the context of Holstein model. Green's function approach is implemented to calculate the electronic contribution of thermal conductivity as a function of radius of carbon nanotube, temperature and electron phonon coupling strength. Our results show that electronic thermal conductivity increases as a function of temperature at low temperature and gets a maximum value then decays at high temperature. Also the effect of radius of both metallic and semiconductor zigzag carbon nanotube on the thermal conductivity is studied. Our results show thermal conductivity increases when CNT diameter increases and decreases with electron phonon interaction strength.     

Effect of nickel,iron and cobalt on growth of aligned carbon nanotubes

The effect of pure nickel, iron and cobalt on growth of aligned carbon nanotubes was systematically studied by plasma-enhanced hot-filament chemical vapor deposition. It is found that the catalyst has a strong effect on the nanotube diameter, growth rate, wall thickness, morphology and microstructure. Ni yields the highest growth rate, largest diameter and thickest wall, whereas Co results in the lowest growth rate, smallest diameter and thinnest wall. The carbon nanotubes catalyzed by Ni have the best alignment and the smoothest and cleanest wall surface, whereas those from Co are covered with amorphous carbon and nanoparticles on the outer surface. The carbon nanotubes produced from Ni catalyst also exhibit a reasonably good graphitization. Therefore, Ni is considered as the most suitable catalyst for growth of aligned carbon nanotubes. Received: 30 November 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

Carbon nanotube synthesis on oxidized porous silicon

Carbon nanotubes were grown on thermally oxidized porous silicon by catalytic chemical vapor deposition from the mixture of ferrocene and xylene precursor. The growth rate of carbon nanotubes showed dependence on the oxidation extent of porous silicon. On pristine porous silicon surfaces, only poor nanotube growth was observed, whilst samples oxidized in air at 200, 400, 600 and 800 °C prior to the deposition process proved to be suitable substrates for carbon nanotube synthesis. Networks of carbon tubes with diameter of ∼40 and ∼10 nm observed on the surfaces of samples were investigated by electron microscopy and by energy dispersive X-ray analysis.     

Growth of carbon nanotubes from ring carbon clusters

The possibility of growing single-wall carbon nanotubes from ring carbon clusters that appear at a certain stage of cooling carbon vapor is discussed. Such a technique could allow one to grow single-wall nanotubes without introducing a macroscopic amount of a catalyst and to retain nanotubes open during their growth. An analysis performed using semiempirical quantum-chemical methods shows that, when catalyst atoms interact with the edge of an already formed nanotube surface, the bonds of these atoms with carbon tend to occupy positions normal to the generatrix of the nanotube. This situation is natural for transition-metal atoms, since they favor the destruction of pentagonal cycles at the edge of the surface. The destruction mechanism consists in the fact that pentagons incorporate carbon atoms from the outside and become hexagons. The dependence of this tendency on the type of catalyst atom is considered.     

Structural and morphological dependence of carbon nanotube arrays on catalyst aggregation

Catalyst aggregation affects the growth of carbon nanotube (CNT) arrays in terms of tubular structures, waviness, entanglement, lengths, and growth density etc., which are important issues for application developments. We present a systematic correlation between the aggregation of catalyst on the SiO₂/Si substrate and the structure and morphology of CNT arrays. The thickness of the catalyst film has a direct effect on the areal density of the catalytic particles and then the alignment of the CNT array. Introducing alumina as buffer layer and annealing the catalyst film at low pressure are two effective approaches to downsize the catalyst particles and then the diameter, wall number of the CNTs. Both the size and areal density of the catalyst also change with the CNT growth in accordance with Ostwald ripening process, with the bottom of the CNT array varying from well-aligned to disordered and adhesion between catalyst particles and the substrate getting enhanced. Strategies including tuning the thickness of the catalyst film, changing buffer layer, controlling on the growth time and the system pressure were used to regulate the aggregation of the catalyst. CNT arrays from disordered to well-aligned, from multi-walled to few-walled and further to single-walled were reproducibly synthesized by chemical vapor deposition of acetylene.