Diode-pumped passively Q-switched YAG/Yb:YAG laser with Cr4+:YAG as a saturable absorber

We design an efficient passively Q-switched laser using a composite YAG/Yb:YAG crystal as the laser gain medium and a Cr⁴⁺:YAG crystal as a saturable absorber. We obtain an average output power of 1.81 W in 1030 nm laser at an absorbed pump power of 4.8 W, corresponding to an optical-to-optical efficiency of 37.7% and a slope efficiency of 47.3%. The pulsed laser has a repetition rate of about 28.6 kHz and a pulse width of 15.8 ns, with the highest peak power of 4 kW. In addition, using a LBO as the intracavity frequency doubler, we obtain a maximum power of 246 mW in 515 nm pulsed laser at an absorbed pump power of 3.8 W.     

High Average Power, Compact Passively Q-Switched 532 nm Green Laser on Nd:YAG/Cr4+:YAG Composite Crystal

We design a passively Q-switched intracavity frequency-doubled 532 nm laser using Nd:YAG/Cr⁴⁺:YAG composite crystal and type II phase matching KTP crystal. Under 13.97 W pump power, the average output power of the laser elaborated is up to 681 mW, with 200 ns pulse width and 9.1 kHz pulse repetition rate.     

A compact passively Q-switched intra-cavity frequency doubled Nd:YAG/Cr4+:YAG composite crystal green laser

A compact diode-end-pumped passively Q-switched intra-cavity frequency doubled Nd:YAG/Cr⁴⁺:YAG composite crystal laser was demonstrated. The pulsed laser at 532 nm was produced and the dependence of the average out power, pulse width and pulse repetition rate on incident pump power were measured. Under the pump power of 14 W, the minimum pulse width of 3.5 ns with repetition rate of 27.5 kHz was obtained, corresponding single-pulse energy of 18 μJ and peak power of 5.3 kW.     

Sub-nanosecond passively Q-switched Yb:YAG/Cr4+:YAG sandwiched microchip laser

We report on laser-diode pumped low-threshold, and compact passively Q-switched Yb:YAG microchip lasers, with Cr⁴⁺:YAG crystals as the saturable absorbers. The laser threshold at the fundamental wavelength of 1.03 μm is as low as 0.25 W, and the slope efficiency is as high as 36.8%, and the optical-to-optical efficiency is as high as 27% for the 95% initial transmission of the Cr⁴⁺:YAG crystal. A pulse width of 1.35 ns and peak power of over 8.2 kW was obtained. Using a 5 mm thick KTP crystal as the second-harmonic generation medium, 514.7 nm green light of 155 mW power was generated. The pulse duration of 480 ps was generated at 1.03 μm by using 85% of the initial transmission of the Cr⁴⁺:YAG saturable absorber. Stable single-longitudinal-mode oscillation and wide-separated multi-longitudinal-mode oscillation due to the etalon effect of the Cr⁴⁺:YAG thin plate was achieved at different pump power levels. PACS 42.55.Sa; 42.55.Xi; 42.60.Gd     

1.3-ns pulse,compact passively Q-switched microchip green laser by Nd:YAG/Cr<Superscript>4+</Superscript>:YAG composite crystal

In this article, a diode-end-pumped passively Q-switched extra-cavity frequency doubled micro-type green laser by Nd:YAG/Cr⁴⁺:YAG composite crystal was demonstrated. The dependence of the average out power, pulse width and pulse repetition rate on incident pump power were measured. Under the pump power of 14 W, the minimum pulse width of 1.3 ns with repetition rate of 68.0 kHz was obtained, corresponding single-pulse energy of 8.8 μJ and peak power of 6.7 kW.     

LD端面泵浦Cr4:YAG被动调Q激光器输出特性研究

对激光二极管端面泵浦Cr⁴⁺:YAG被动调QNd:YAG激光器输出特性进行了实验研究.实验研究发现,激光器输出功率及脉冲重复频率随谐振腔长度增大而增大.为解释这一实验现象,测量了泵浦光斑在激光晶体内尺寸,同时计算了激光晶体及Cr⁴⁺:YAG晶体内的基模激光光斑半径随谐振腔长度变化.分析结果表明:激光晶体内泵浦光斑尺寸远小于激光晶体内基模光斑半径,腔模间交叠效率较低;当腔长增加时,激光晶体内的基模激光光斑减小,腔模间交叠效率增加,从而导致输出功率及脉冲重复频率随腔长增加而增加;另外,Cr⁴⁺:YAG晶体内光斑半径也随谐振腔长度减小,引起Cr⁴⁺:YAG晶体漂白时间缩短,导致脉冲重复频率随腔长增加而增加.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with V3+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a V³⁺:YAG saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO ₄ laser has been realized. The dependence of pulse width, pulse energy and peak power on the incident pump power at determinate pulse repetition rate are measured. Under the absorbed pump power of 8.59 W, the pulse temporal profile of the AO-switching with the pulse duration of 14.5 ns, the double Q-switching with pulse duration of 7.6 ns at 10 kHz, and the passive Q-switching with pulse duration of 22.3 ns are obtained. The pulse duration is obviously compressed in contrast to the purely actively AO Q-switched laser or the purely passively Q-switched laser with V³⁺:YAG.     

220 W average output power from a Q-switching Nd: YAG slab laser with a LiF:F2 crystal

By using a LiF:F^-₂ crystal as a passive Q-switching modulator an average output power of 220 W was achieved from a Nd:YAG slab laser. The oscillator-amplifier resonator configuration under investigation delivered a peak pulse power up to 3 MW and a pulse energy of 0.31 J, pulse width of 100 ns.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

1 mJ Passively Q-switched Nd:YAB laser using a V:YAG crystal

We describe the design and operation of a diode-pumped compact and efficient Nd:YAB laser operating at 1338 nm. We use a passive Q-switch V:YAG crystal to achieve 1 mJ Q-switched pulses at the laser output. The laser elaborated provides an average power of 1.5 W in the CW regime and 1 W in Qswitched mode with an optical efficiency of 15 and 10%, respectively. A 65 mm plano-concave cavity is formed with an output in the TEM₀₀ mode. At a pulse width of 15 ns, the achieved peak power is 66 kW.     

A Tm:YLF End-Pumped Acousto-Optic <Emphasis Type="Italic">Q</Emphasis>-Switched Ho:YAG Laser

We report an acoustic Q-switched Ho:YAG laser end-pumped by a 1,908 nm Tm:YLF laser. The doping concentration of Ho:YAG crystal is 2 at.%, and dimensions ø5×20 mm. We measure the pulsedlaser output characteristics of the Ho:YAG laser at different repetition rates (RF). Under optimum experimental conditions, the high-power 2.1 μm output power reaches 4.17 W at a given pump power of 13.25 W and repetition frequency of 8.0 kHz. For a slope efficiency of 16.88%, the corresponding optical-to-optical conversion efficiency reaches 31.47%. We obtain a minimum single pulsed energy of 7.36 mJ and a pulse width of 52.8 ns at a pump power of 10.52 W and repetition rate of 0.5 kHz, with a peak power of 139 kW.     

Single diode-pumped, 1.7 ns microchip laser by Nd:YAG/Cr<Superscript>4+</Superscript>:YAG composite crystal

A single diode-pumped passively Q-switched composite Nd:YAG/Cr⁴⁺:YAG laser, which cavity mirrors were deposited directly onto the crystal, was demonstrated in this paper. At the incident power of 2.75 W, the maximum average output power of 365 mW and the shortest pulse width of 1.7 ns were obtained, corresponding the repetition rate of 14.6 kHz. The single-pulse energy and the peak power were estimated to be 25 μJ and 14 kW, respectively. The corresponding optical-optical conversion efficiency was 13.3%.     

Narrow pulse width and high power passively Q-switched Nd3+:Gd3Ga5O12 laser with Cr4+:YAG saturable absorber

A compact, diode-pumped passively Q-switched Nd³⁺:Gd₃Ga₅O₁₂ (Nd:GGG) laser with Cr⁴⁺:YAG saturable absorber has been successfully demonstrated. Stable Q-switched pulses with pulse energy of 100 ??J and high peak power of 14 kW have been obtained. The pulse width was as short as 7 ns with low repetition rate of 10 kHz. The dependence of pulse width, pulse repetition rate, pulse energy and pulse peak power on pump power have been measured respectively. Experimental results reveal that the Nd:GGG crystal with Cr⁴⁺:YAG saturable absorber is suitable for narrow pulse width and high power passively Q-switched lasers.     

1064 nm Nd:YAG laser intracavity pumped at 946 nm

We present for the first time a Nd:YAG laser emitting at 1064 nm intracavity pumped by a 946 nm diode-pumped Nd:YAG laser. A 885 nm laser diode is used to pump the first Nd:YAG crystal emitting at 946 nm, and the second Nd:YAG laser emitting at 1064 nm intracavity pumped at 946 nm. We achieved an output power of 7.97 W at 1064 nm for an absorbed pump power at 946 nm of 9.55 W, corresponding to an optical efficiency of 83.4%. The beam quality M² quality factor is about 1.1 at the maximum output power.     

LD side-pumped passively Q-switched Yb:YAG slab laser

A quasi-continuous wave laser diode side-pumped passively Q-switched Yb:YAG slab laser with Cr⁴⁺:YAG saturable absorber has been demonstrated in order to understand the pulse properties of Yb:YAG crystal. To our knowledge the maximum 69% extraction efficiency is achieved by the system. 44 μJ pulse energy and 1.64 KW peak power with near diffraction-limited beam quality are presented at 25 Hz repetition rate. The build-up time of the Q-giant in the passively Q-switched laser is shown.     

Diode-end-pumped passively Q-switched 1319 nm Nd:YAG ceramic laser with a V<Superscript>3+</Superscript>:YAG saturable absorber

The performance of a LD-end-pumped passively Q-switched Nd:YAG ceramic laser at 1319 nm with a V³⁺:YAG saturable absorber was demonstrated for the first time to the best of our knowledge. The average output power of 1.8 W was obtained under the pump power of 23.7 W, corresponding to the optical conversion efficiency of 7.8% and slope efficiency of 9%. The minimum pulse width was 128 ns with the pulse repetition rate of 230 kHz, which was attained with a T = 2.8% output coupler at the pump power of 23.7 W.     

2 ns-pulse, compact and reliable microchip lasers by Nd:YAG/Cr4+ YAG composite crystal

A compact diode-end-pumped passively Q-switched composite Nd:YAG/Cr⁴⁺:YAG laser was demonstrated in this paper. At the incident pump power of 11.8 W, the shortest pulse width of 2.05 ns was obtained, corresponding to average output power of 1.15 W and repetition rate of 17.1 kHz. The single-pulse energy and peak power were estimated to be 67.3 μJ and 32.8 kW, respectively.     

Passively Q-switched Nd:YAG ceramic laser towards large pulse energy and short pulse width

A large pulse energy and high peak power passively Q-switched ceramic neodymium-doped yttrium aluminum garnet (Nd:YAG) laser has been demonstrated with Cr⁴⁺:YAG crystals as the saturable absorbers. By employing a continuous wave (CW) laser-diode (LD) as the pump source, as high as 11.3 W CW output power of 1064 nm was obtained under the pump power of 21.6 W, with an optical conversion efficiency of 52.3%. Inserting different initial transmissions Cr⁴⁺:YAG as saturable absorbers, under the incident pump power of 15.6 W, the largest pulse energy, shortest pulse width, and highest peak power are measured to be 188 μJ, 3.16 ns, and 59.5 kW, respectively. As we has known, this is the best passively Q-switched results ever reported by Nd:YAG ceramic material.     

Diode-pumped Nd:YAG ceramic laser at 946 nm passively Q-switched with a Cr4+:YAG saturable absorber

We demonstrate a diode-pumped Nd:YAG ceramic laser with emission at 946 nm that is passively Q-switched by single-crystal Cr⁴⁺:YAG saturable absorber. An average output power of 1.7 W is measured under 18.4 W of incident power using an output mirror with transmission T=4%. The corresponding optical-to-optical efficiency is 9.2%. The laser runs at a pulse repetition rate of 120 kHz and delivers pulses with energy of 14 μJ and duration of 80 ns, which corresponds to a peak power of 175 W.