Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVD

Amorphous hydrogenated silicon carbonitride thin films (a-Si:C:N:H), deposited by plasma enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDSN) as monomer and Ar as feed gas, have been investigated for their structural and optical properties as a function of the deposition RF plasma power, in the range of 100-300 W. The films have been analysed by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), UV-vis-NIR spectrophotometry and atomic force microscopy (AFM). From the analysis of the FT-IR spectra it results that the films become more amorphous and inorganic as RF plasma power increases. The incorporation of oxygen in the deposited layers, mainly due to the atmospheric attack, has been evaluated by XPS and FT-IR spectroscopy. Reflectance/transmittance spectra, acquired in the range of 200-2500 nm, allow to descrive the film absorption edge for interband transitions. A relationship between the optical energy band gap, deduced from the absorption coefficient curve, and the deposition RF plasma power has been investigated. The reduction of the optical energy gap from 3.85 to 3.69 eV and the broadening of the optical absorption tail with RF plasma power increasing from 100 to 300 W are ascribed to the growth of structural disorder, while the increase of the refractive index, evaluated at 630 nm, is attributed to a slight densification of the film. The AFM analysis confirms the amorphous character of the films and shows how the deposited layers become rougher when RF plasma power increases. The wettability of the film has been studied and related to the chemical composition and to the morphology of the deposited layers.     

Characteristics of Co-filled carbon nanotubes

The Co-filled carbon nanotubes (CNTs) film was produced on silicon substrate by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-CVD). The effects of different plasma powers of 200, 300, 400 and 500 W, on the morphology, structure and electrical properties of the CNTs film, were studied. The results showed that the surface density of the vertical nanotubes decreased when the plasma power was higher than 200 W. When plasma power of 300 W was used, the ends of the metal-filled carbon nanotubes (MF-CNTs) became straighter and more uniform. The Co-filled CNTs grown at 300 and 400 W had a current discharge at the applied voltages of 30 and 40 V, respectively. In addition, the surface morphology and the structure of the CNTs film were examined using scanning electron microscopy (SEM) and high-resolution field emission gun transmission electron microscopy (TEM). Energy dispersive X-ray spectroscopy (EDXS) analyses were performed to identify the composition of the material inside the CNTs.     

Plasma sterilization using the RF glow discharge

In the present work, glow discharge oxygen plasma was used to sterilize the Pseudomonas aeruginosa on the polyethylene terephthalate (PET) sheets. In a self-designed plasma reaction equipment, active species (electron, ion, radical, UV light, etc.) were separated effectively, and the discharge area, afterglow area and remote area were plotted out in the plasma field. Before and after plasma treatment the cell morphology was studied by scanning electron microscopy (SEM). The results showed that after treatment of 30 s the germicidal effect is 4.26, 3. 84, 2.61, respectively in the three areas on the following conditions: discharge power was 40 W and gas flux was 20 cm³/min. SEM results revealed the cell morphology before and after plasma treatment. The walls or cell membrane cracking was testified by determining the content of protein using coomassie light blue technique. The results from electron spin resonance spectroscopy (ESR) and double Langmuir electron probe showed that electron, ion and oxygen free radical played important roles in sterilization in the discharge area, but only oxygen radicals acted to sterilize the bacteria in the afterglow area and the remote area.     

Integration method for directly analyzing interface statistics of periodic multilayers from X‐ray scattering

An integration method is demonstrated for directly determining the average interface statistics of periodic multilayers from the X‐ray scattering diagram. By measuring the X‐ray scattering diagram in the out‐of‐plane geometry and integrating the scattered intensity along the vertical momentum transfer q_z in an interval, which is decided by the thickness ratio Γ (ratio of sublayer's thickness to periodic thickness), the cross‐correlations between different interfaces are canceled and only the autocorrelations are reserved. Then the multilayer can be treated as a `single interface' and the average power spectral density can be obtained without assuming any vertical correlation model. This method has been employed to study the interface morphology of sputter‐deposited W/Si multilayers grown at an Ar pressure of 1–7 mTorr. The results show an increase in vertical correlation length and a decrease in lateral correlation length with increased Ar pressure. The static roughness exponent α = 0 and dynamic growth exponent z = 2 indicate the Edwards–Wilkinson growth model at an Ar pressure of 1–5 mTorr. At an Ar pressure of 7 mTorr, α = 0.35 and z = 1.65 indicate the Kardar–Parisi–Zhang growth model.     

Efficient continuous wave and Q-switched operation of a dual-end-pumped <Emphasis Type="Italic">c</Emphasis>-cut Tm:YAP laser

An efficient continuous wave (CW) and Q-switched c-cut Tm:YAP laser is reported in this letter. With the dual-end-pumped convex-concave resonator, CW output power up to 13.6 W at 1.99 μm was obtained under a total incident pump power of 50 W. The corresponding slope efficiency was 34.3% and conversion efficiency was 27.2%. The active Q-switched operation of the laser had an average output power of 12.5 W at 10 kHz pulse repetition frequency, with a minimum pulse width of 126 ns. With 6 kHz pulse repetition frequency, the maximum pulse energy of 1.6 mJ was obtained. In addition, using the Tm:YAP laser as a pumping source for gain-switched Cr:ZnSe laser, as much as 4 W output power in the wavelength range of 2.5–2.6 μm was obtained.     

Investigations on the effect of process parameters on the growth of vertically oriented graphene sheet in plasma-enhanced chemical vapour deposition system

A multistage numerical model comprising the plasma kinetics and surface deposition sub-models is developed to study the influence of process parameters, namely, total gas pressure and input plasma power on the plasma chemistry and growth characteristics of vertically oriented graphene sheets (VOGS) grown in the plasma-enhanced chemical vapour deposition system containing the Ar + H₂ + C₂H₂ reactive gas mixture. The spectral and spatial distributions of temperature and number densities, respectively, of plasma species, that is, charged and neutral species in the plasma reactor, are examined using inductively coupled plasma module of COMSOL Multiphysics 5.2 modelling suite. The numerical data from the computational plasma model are fed as the input parameters for the surface deposition model, and from the simulation results, it is found that there is a significant drop in the densities of various plasma species as one goes from the bulk plasma region to the substrate surface. The significant loss of the energetic electrons is observed in the plasma region at high pressure (for constant input power) and low input power (for constant gas pressure). At low pressure, the carbon species generate at higher rates on the catalyst nanoislands surface, thus enhancing the growth and surface density of VOGS. However, it is found that VOGS growth rate increases when input plasma power is raised from 100 to 300 W and decreases with further increase in the plasma power. A good comparison of the model outcomes with the available experimental results confirms the adequacy of the present model.     

Effect of growth parameters on crystallinity and properties of ZnO films grown by plasma assisted MOCVD

Thin films of ZnO have been grown by plasma assisted metal–organic chemical vapour deposition (PA-MOCVD) using a 13.56 MHz O₂ plasma and the (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,N′,N′-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20 W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.     

等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响

使用等离子体活化硒源对电沉积制备的Cu-In-Ga金属预制层进行了硒化处理时, 发现等离子体功率对Cu(In_1-xGa_x)Se₂(CIGS)晶粒的生长有重要影响, 当等离子体功率为75 W时, 制备出单一Cu(In_0.7Ga_0.3)Se₂相的CIGS薄膜. 通过对不同衬底温度的等离子体活化硒源硒化的CIGS 薄膜进行了研究与分析, 并与普通硒化后的薄膜进行对比, 发现高活性硒在低温下会促进Ga-Se二元相的生成, 从而有利于Cu(In_0.7Ga_0.3)Se₂单相的生长. 对等离子体硒化后的CIGS薄膜进行了电池制备, 发现单相CIGS薄膜没有显著提高电池性能. 通过优化工艺, 所制备的CIGS电池效率达到了9.4%. 关键词： 0.7Ga_0.3)Se₂')" href="#">Cu(In_0.7Ga_0.3)Se₂ 电沉积 Cu-In-Ga金属预制层 等离子体活化硒     

A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Diode-pumped CW Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript> laser at 1339 nm

A diode-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser emitting at 1339 nm is described. At the incident pump power of 17.8 W, as high as 3.4 W of continuous-wave (CW) output power at 1339 nm is achieved. The slope efficiency with respect to the incident pump power was 23.6%. The output power stability over 60 min is better than 3.5%. The laser beam quality M ² factor is 1.33.     

Deactivation of Escherichia coli with different volumes in drinking water using cold atmospheric plasma

This experimental study aimed to evaluate the potential of cold atmospheric plasma jet to deactivate Escherichia coli from drinking water. We studied the effect of the volume of water samples on the performance of plasma jet on deactivation of E. coli of 1, 500, 1,000, 1,500, and 2,000 cubic centimetres. The results of deactivation of E. coli in 500 and 1,000 cc water samples were the same as one cc of a water sample and we observed 8-log reduction of E. coli using 50 W. In 1,500 and 2,000 cc water samples at 8 min using a power of 50 W, 4.5 and 2.9 log reduction of E. coli was achieved and while we used 20 W, 2.5 and 1.8 log reduction of E. coli bacteria was performed. This indicated that the increasing volume of water above 1,500 cc caused the reduction of the efficiency of E. coli removal. Also, increasing power caused to increase E. coli removal efficiency. In addition, we monitored changes in pH values and temperature during experiments. Using 20 W, the temperature was increased (natural temperature of the water was 22 °C) 2 °C after 8 min while applying 50 W, the temperatures were raised 5 °C. pH of the water after 8 min in the 1,000 cc water sample, with an input power of 20 W, decreased from 7.1 to 5.5; while the input power was 50 W, pH changed from 7.1 to 4.3. With an increase in plasma irradiation time, the number of E. coli had a significant decrease per min while using in samples of 1 cc. After 8 min, we observed 4-log reductions of E. coli with the input power of 20 W and 8-log reduction of bacteria with the input power of 50 W. In 1,500 and 2,000 cc of water samples using plasma radiation for 8 min, 2.5 log and 1.8 log reduction of E. coli was achieved, respectively. This means that an increasing volume of water above 1,500 cc needs more power and time to deactivate E. coli from the water.     

等离子体处理的聚丙烯和聚乙烯的粘合体

采用射频辉光放电等离子体和介质阻挡放电等离子体对聚丙烯（PP）和聚乙烯（PE）进行处理后,使用聚氨酯进行粘接,并测试了混合粘合体的剪切强度。介质阻挡放电功率是100 W时,等离子体处理对混合粘合体的剪切强度无影响。介质阻挡放电的功率为200 W、处理时间20 s时,等离子体处理效果最佳,剪切强度为1.58 MPa,是未处理的混合粘合体的14.36倍。介质阻挡放电的功率是300 W时,样品在10 s内就被击穿。射频辉光放电等离子体中,使用空气处理后最大剪切强度为1.60 MPa（100 W,3 min）,使用氮气处理后的最大剪切强度为1.57 MPa（200 W,3 min）。通过扫描电镜（SEM）对等离子体处理前后的PP表面形貌观察,发现未处理样品的表面比较平滑,而经等离子体放电处理后的样品表面变得疏松,出现了大量泡状物质,表面粗糙程度提高。     

Diode-pumped Yb:Y<Subscript>2</Subscript>SiO<Subscript>5</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> cyan laser at 501.7 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Simultaneous dual-wavelength CW laser operation at 1064 and 930 nm in Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript>

A dual-wavelength continuous-wave (CW) diode end-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser that generates simultaneous laser action at the wavelengths 1064 and 930 nm is demonstrated. A total output power of 2.15 W (1.57 W at 1064 nm and 0.58 W at 930 nm) for the dual-wavelength was achieved at the incident pump power of 17.8 W with optical conversion efficiency of 12.1%. The M ² values for 930 and 1064 nm lights were found to be around 1.21 and 1.32, respectively.     

High efficiency,high repetition-rate Nd:YVO<Subscript>4</Subscript> laser with TEM<Subscript>00</Subscript> end-pumped by 887 nm

Thermal effect of laser crystal is a very important factor for solid lasers. The most of heat is generated from the quantum loss between pump light and lasing light. If a longer wavelength of pump light is adopted, quantum loss and quantum loss efficiency can be reduced and improved, respectively. In this paper, a Nd:YVO₄ laser end-pumped by 887 nm LD is reported. Output power of 25 W is obtained from a single Nd:YVO₄, when the crystal absorbs pump light power of 38 W. The corresponding opto-optic conversion efficiency is up to 65.7%. When 30.7 W pump light is absorbed in the crystal, 19.4 W TEM₀₀ is obtained with M _x ² = 1.30, M _y ² = 1.26 and opto-optic conversion efficiency of 63.2%. The laser can work at the Q-switched mode. The uniform pulses are generated at high repetition of 100 kHz. And the conditions of pulse stability are analyzed in this paper.     

微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究

采用等离子体增强化学气相沉积技术沉积一系列处于不同生长阶段的微晶硅薄膜.通过同步辐射X射线掠角反射技术研究微晶硅薄膜的表面粗糙度随时间等的演化，探讨微晶硅薄膜的生长动力学过程及其生长机制.研究结果表明，在衬底温度为200 ℃，电极间距为2 cm，沉积气压为6.66×1０² Pa，射频功率密度为0.22 W/cm²，氢稀释度分别为99%和98%的沉积条件下，在玻璃衬底上生长的微晶硅薄膜生长指数β分别为0.21±0.01和0.24±0.01.根据KPZ模型，微晶硅薄膜的生长机制为有限扩散生长. 关键词： X射线掠角反射 微晶硅薄膜 表面粗糙度 生长机制     

Preparation and growth mechanism of micro spherical ammonium dinitramide crystal based on ultrasound-assisted solvent-antisolvent method

Micro-sized spherical ammonium dinitramide (ADN) crystals are successfully prepared by a facile ultrasound-assisted solvent-antisolvent recrystallization method without introducing any additives. The influences of the volume ratio of solvent to antisolvent, the antisolvent temperature and the ultrasound power on the micro-morphologies and properties of ADN crystals are studied systematically. The changes of morphology, particle size, crystal structure and melting point of the ADN crystals are characterized through scanning electron microscopy (SEM), laser particle size analyzer (LPSA), X-ray diffraction (XRD) and differential scanning calorimetry (DSC), respectively. The results show that the optimal experimental parameters for the ADN crystal of spherical morphology are as follows: the volume ratio of solvent to antisolvent is 1:50, the antisolvent temperature is 20 ℃, and the ultrasound power is 70 W. The predicted hexagonal-flake and spherical morphologies for the ADN are close to the experimental morphologies. The growth mechanism of the spherical ADN crystal changes with supersaturation of the ADN solution. As the degree of supersaturation increases, the growth models of the spherical ADN change from the spiral growth to the rough growth, and the morphologies of ADN change from the large-sized ADN ball to the small-sized ADN ball.     

Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO<Subscript>4</Subscript>/Cr:YAG laser at high repetition rate operation

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr:YAG laser is demonstrated for the first time. In a concave-piano cavity, pulsed 912 nm laser performance is investigated using two kinds of Cr:YAG crystal with different unsaturated transmission (T _U) of 95% and 90% at 912 nm as the saturable absorbers. When the T _U = 90% Cr:YAG is used, as much as 2.6 W average output power for short pulsed 912 nm laser is achieved at an absorbed pump power of 34.0 W, corresponding to an optical efficiency of 7.6% and a slope efficiency of 20.3%. Moreover, 10.5 ns duration pulses and up to 2.3 kW peak power is obtained at the repetition rate around 81.6 kHz.     

Experimental results of helicon sources

Helicon plasma sources are known as efficient generators of uniform and high density plasma.A helicon plasma source was developed for the investigation of plasma stripping and plasma lenses at the Institute of Modern Physics, CAS.In this paper, the characteristics of helicon plasma have been studied by using a Langmuir four-probe and a high plasma density up to 3.9×10~(13)/cm~3 has been achieved with the Nagoya type Ⅲ antenna.In the experiment, several important phenomena were found: (1) for a given magnetic induction intensity, the plasma density became greater with the increase of RF power; (2) helicon mode appeared at RF power between 300 W and 400 W; (3) the plasma density gradually tended to saturation as the RF power increased to the higher power; (4) a higher plasma density can be obtained by a good match between the RF power and the magnetic field distribution.The key issue is how to optimize the matching between the RF power and the magnetic field.Moreover, some tests on the extraction of ion beams were performed, and preliminary results are given.The problems which existed in the helicon ion source will be discussed and the increase in beam density will be expected by extraction system optimum.