X-ray Photoelectron Spectroscopy of Sb2S3 Crystals

The paper presents the X-ray photoelectron spectra (XPS) of the valence band and core levels of semiconductor ferroelectric Sb₂S₃ single crystals, which show weak phase transitions and anomalies of various physical properties. The XPS were measured with monochromatized Al K _α radiation in the energy range 0-1450 eV and the temperature range 160-450 K. The valence band is located 0.8-7.5 eV below the Fermi level. Experimental results of the valence band and core levels are compared with the results of theoretical ab initio calculations of the molecular model of Sb₂S₃ crystal. The chemical shifts in Sb₂S₃ crystal for the Sb and S states are obtained. Results revealed that the small structural rearrangements at the phase transition T _c1 = 300 K shift the Fermi level and all electronic spectrum. Also, temperature dependence of a spontaneous polarisation shifts the electronic spectra of the valence band and core levels. Specific temperature-dependent excitations in Sb 3d core levels are also revealed.     

Electronic structure of p-type La1 ? xM x2+ MnO3 manganites in the ferromagnetic and paramagnetic phases in the LDA + GTB approach

The band structure, spectral intensity, and position of the Fermi level in doped p-type La_{1 − x} M _x/2+MnO₃ manganites (M = Sr, Ca, Ba) is analyzed using the LDA + GBT method for calculating the electronic structure of systems with strong electron correlations, taking into account antiferro-orbital ordering and using the Kugel-Khomskii ideas and real spin S = 2. The results of the ferromagnetic phase reproduce the state of a spin half-metal with 100% spin polarization at T = 0, when the spectrum is of the metal type for a quasiparticle with one spin projection and of the dielectric type for the other. It is found that the valence band becomes approximately three times narrower upon a transition to the paramagnetic phase. For the paramagnetic phase, metal properties are observed because the Fermi level is located in the valence band for any nonzero x. The dielectrization effect at the Curie temperature is possible and must be accompanied by filling of d _x orbitals upon doping. The effect itself is associated with strong electron correlations, and a complex structure of the top of the valence band is due to the Jahn-Teller effect in cubic materials.     

Band mixing in narrow gap semiconductors

The interaction of conduction and valence bands in narrow gap semiconductors such as InSb and HgCdTe influences the position and width of subband energy levels in space-charge layers. While a nonzero width can only occur if electrons from the conduction band can tunnel into approximately degenerate states of the valence band the level shifts due to band mixing are always present. We present a Green's function treatment which allows in a simple way to discuss the dependence of band mixing effects on the parameters of thek·p-Hamiltonian in particular the band gap. The essential qualitative feature of the level shifts is adecrease of subband energy separation withdecreasing effective mass. This agrees with recent experimental results for Hg_1-x Cd _x Te.     

Ba0.5Sr0.5TiO3电子结构和光学性质的第一性原理研究

利用第一性原理研究了Ba_0.5Sr_0.5TiO₃的能带结构和光学性质.结果表明,导带和价带都来源于钛原子3d轨道和氧原子2p轨道的杂化.导带主要由钛原子的3d轨道贡献,价带主要由氧原子的2p轨道贡献.吸收系数为10⁵ cm^-1量级,且吸收主要集中在低能区.折射率为n（0）=2.1,结果与实验符合. 关键词： 第一性原理 能带结构 光学性质     

The amplification of far-infrared radiation on optically excited p-type germanium

The far-infrared spectrum of cyclotron resonance absorption in the valence band of p-type germanium has been calculated using 6 × 6 k*p Hamiltonian for degenerate valence band for magnetic field 20T and lattice temperature 77K. That has been shown that excitation by pulseCO ₂ laser radiation can lead to the amplification on light hole cyclotron resonance.     

Fast Intrinsic Emissions of Wide-Gap Oxides Under Electron Irradiation

The emission spectra have been measured in the range of 1.6–9.0eV under irradiation of wide-gap oxides by single electron pulses (3 ns, 300kV). A fast (τ < 3 ns) continuous and temperature-independent emission, connected mainly with the transitions of hot holes between the levels of the valence band of oxides, can be separated in these spectra at 300–600 K, when the inertial emissions (5–7eV) of localized excitations undergo a strong thermal quenching. It is suggested that a drastic decrease of the intensity of this so-called hole intraband luminescence (IBL) in a short-wavelength spectral region is caused by the lowering of the density of states at the edges of the valence band and, therefore, supplies information on the width of an anion valence band E^v. The drastic decrease of the IBL intensity takes place at 6.4–8.6eV in BaMgAl₁₀O₁₇, SrAl₂O₄, MgAl₄O₇, MgO and BeO, that agrees satisfactorily with the values of E^v in these systems obtained by other methods.     

Surface enhanced covalency and its effect on the surface states ofd-band metal oxides

The effect of electron-electron interactions on the surface states of ionicd-band oxides is reported. The local density of states of surface cations in the valence band region is significantly increased when surface states occur in the band gap. Coulomb repulsion associated with thissurface enhanced covalency tends to force surface states out of the band gap. These results suggest an explanation of recent experiments on SrTiO₃ and TiO₂.     

Energy levels of rare-earth ions in Gd<Subscript>2</Subscript>O<Subscript>2</Subscript>S

The energies of the ground 4f ⁿ levels of tri- and divalent rare-earth ions with respect to the conduction and valence bands of Gd₂O₂S crystal has been determined. It is shown that the Pr³⁺, Tb³⁺, and Eu³⁺ ions can be luminescence centers in Gd₂O₂S. The levels of the Nd³⁺, Dy³⁺, Er³⁺, Tm³⁺, Sm³⁺, and Ho³⁺ ions lie in the valence band; therefore, these ions cannot play the role of activators. The ground 4f level of the Ce³⁺ ion is near the midgap, due to which Ce³⁺ effectively captures holes from the valence band and electrons from the conduction band and significantly decreases the afterglow level of the Gd₂O₂S:Pr and Gd₂O₂S:Tb phosphors.     

应变Si价带色散关系模型

基于K.P理论框架,通过引入应变哈密顿微扰项,详细推导并建立了应变Si的价带色散关系模型.所得模型适用于任意晶向弛豫Si_1－xGe_x(0≤x≤0.6)衬底上生长的应变Si,并且,通过该模型可以获取任意K矢方向的应变Si价带结构及空穴有效质量,对器件研究设计可提供有价值的参考. 关键词： 应变Si K.P理论 色散关系     

应变Ge/Si1-xGex 价带色散模型

基于k·p微扰理论, 通过引入应变哈密顿量作为微扰, 建立了双轴应变Ge/Si_1-xGe_x价带色散关系模型. 模型适于任意晶向弛豫Si_1-xGe_x虚衬底上的应变Ge价带结构, 通过该模型可获得任意k方向应变Ge的价带结构和空穴有效质量. 模型的Matlab模拟结果显示, 应变Ge/Si_1-xGe_x价带带边空穴有效质量随Ge组分的增加而减小, 其各向异性比弛豫Ge更加显著. 本文研究成果对Si基应变Ge MOS器件及集成电路的沟道应力与晶向的设计有参考价值.     

Electronic Structure of Alkali Metal Sulfates

A calculation of the band structure, state density, valence and difference densities of Na₂SO₄, LiKSO₄, NaKSO₄ is carried out within the framework of the theory of local electron density by the pseudo-potential method based on numerical sp ³ d ⁵- pseudo-orbitals. The absorption edge of these crystals is found to be circuitous. The partial composition of the valence band is analyzed, and the contribution from non-equivalent oxygen atoms in individual sub-bands is revealed to be different. The band structure of LiKSO₄ is shown to essentially differ from that of Na₂SO₄ and NaKSO₄ in the number of isolated band bunches and state density structure. It is shown that the polarizing effects of cations on anions gives rise to considerable changes in electric charge distribution, which, in particular, results in the formation of a tetrahedral complex LiO₄.     

Forthcoming papers

Kβ X-ray spectra of Si and SiO₂ have been measured accurately with a double crystal spectrometer. The measuredKβ spectrum of silicon element was compared with calculations of the electronic density of states. Observed intensity distribution shows that thep-electrons predominate at the top of the valence band, and somep-like states extend to the middle of the valence band. According to MO calculations the most intensiveKβ line of SiO₂ is 4t ₂ (100), the 3t ₂ (16) line is 17.9 eV lower, and 5t ₂ (5) line 6.3 eV higher. In our measurements the energy differences are 13.0 and 4 eV, respectively, and intensities 30% and 3% from the main line.     

An alternative approach for optimal carrier concentration towards ideal thermoelectric performance

Optimization of the carrier concentration of any thermoelectric material is a prime factor for the enhancement of the thermoelectric figure of merit. An alternative approach for achieving optimal carrier concentration is presented here. We introduce impurity levels of ytterbium (Yb) near the valence band edge of Pb_1–xSn_x Te. The temperature‐dependent redistribution of electrons between the Yb‐impurity levels and the valence band is found to optimize the excess hole concentration at low temperature and negating the effect of intrinsic conduction at higher temperature leading to significantly improved thermoelectric performance in Pb_1–xSn_x Te. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

In this paper, we calculate the band gap and the band discontinuities of a GaN _y AsBi _x structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 μm have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature.     

The XPS valence band spectra of NbC

The x-ray photoemission valence band spectra of NbC have been measured and are compared with the x-ray emission spectra and with the results from band structure calculations. This comparison leads to a large enhancement of theC2 _p photoabsorption cross section (at=1,487 eV) compared to the value calculated for the free atom. The effect of the nonmetal vacancy in the valence band can be described very well with vacancy cluster calculations.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

The valence band of free K clusters studied by photoelectron and Auger spectroscopies

The valence states of free neutral potassium clusters produced by a gas aggregation source were probed by synchrotron radiation based photoelectron spectroscopy. The first ionization energy (IE) of the clusters was determined to be 10% larger than the work function of bulk potassium. Using electrostatic concepts and the IE, the mean size of the clusters was estimated to be ≈2000 atoms. Further information about the valence band was provided by investigation of the Auger process initiated by the ionization of the 3p level with a subsequent emission of an Auger electron from the valence band (M_2,3VV). Plasmon satellites were observed in Auger spectra of free metal clusters.     

Electronic states near fermi level in superconductors La2 − x Sr x CuO4 by means of x-ray absorption spectra near Cu-K and La-L edges

The electronic states of La_{2? x} Sr _x CuO₄ with 0.00 ≤ x ≤ 0.20 are studied by means of X-ray absorption spectroscopy (XANES, EXAFS) near the K-edge of Cu²⁺ ion and the L-edges of La³⁺ ion. It is found that characteristic white lines occurring near L _II and L _III edges of La³⁺ ion show a slight energy shift depending on substituted Sr²⁺ ions, x and temperature. The white lines suggest that unoccupied high-density 5dπ and 5dδ bands of La³⁺ ion just above a Fermi level transform to a hybridized single band of 5dπδ at 78?K in the superconductors with x = 0.10, 0.16 and 0.20. On the other hand, the XANES spectra near the Cu-K edge including a pre-edge region do not depend on x and temperature in the region of 0.00 ≤ x ≤ 0.20. It is considered that there is no reconstruction of electronic states at the Fermi level in a Mott–Hubbard band gap between an O 2p valence band and a Cu 3d conduction band. The electronic states at the Fermi level are probably consisted of the unoccupied 5dπδ band and an empty charge-transfer 3d?⁹ L band at low temperature, bands of which occur in a band gap between a filled O 2p valence band and an unoccupied O 2p conduction band. The insulator–superconductor–metal transitions in La_{2? x} Sr _x CuO₄ are related to the 5dπδ and 3d?⁹ L bands and holes, which site at a top region of the O 2p valence band near the Fermi level produced by a substitution of La³⁺ with Sr²⁺ ions.     

应变Si1－xGex/(111)Si空穴有效质量模型

利用应变Si_1-xGe_x/(111)Si材料价带E(k)-k关系,研究获得了沿不同晶向的空穴有效质量,并在此基础上,建立了空穴各向同性有效质量模型.结果表明,与弛豫材料相比,应变Si_1-xGe_x/(111)Si材料价带带边空穴有效质量各向异性更加显著,带边空穴各向同性有效质量随Ge组分明显减小.该研究成果可为Si基应变PM 关键词： 1-xGe_x')" href="#">应变Si_1-xGe_x 空穴有效质量 价带     

应变Si/(001)Si1-xGex空穴有效质量各向异性

基于应变Si/（001）Si_1-xGe_x材料价带E（k）-k关系模型,研究获得了其沿不同晶向的空穴有效质量.结果表明,与弛豫材料相比,应变Si/（001）Si_1-xGe_x材料价带带边（重空穴带）、亚带边（轻空穴带）空穴有效质量在某些k矢方向变化显著,各向异性更加明显.价带空穴有效质量与迁移率密切相关,该研究成 关键词： 应变Si 价带 空穴有效质量