Intense laser field effects on the linear and nonlinear intersubband optical properties of a semi-parabolic quantum well

By using the compact-density matrix approach, the effect of a nonresonant intense laser field on the linear and nonlinear optical absorptions based on intersubband transitions and the refractive index changes in an asymmetric semiconductor quantum well have been presented. Our results show that the peak position of the absorption coefficient is sensitive to intense laser field, the absorption maximum shifts towards lower energies for increasing intense laser field value. Also we observe as the intense laser field strength increases, the total refractive index change has been increased in magnitude and also shifted towards lower energies. The results indicate that linear and nonlinear optical properties of the low dimensional semiconductor heterostructures can be adjusted in a desired energy range by using intense laser field.     

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schrödinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al_xGa_1−xAs are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures.     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

Nonlinear optical properties in a quantum well with the hyperbolic confinement potential

We have performed theoretical calculation of the nonlinear optical properties in a quantum well (QW) with the hyperbolic confinement potential. Calculation results reveal that the transition energy, oscillator strength, second-order nonlinear optical rectification (OR), geometric factor and nonlinear optical absorption (OA) are strongly affected by the parameters (α,σ) of the hyperbolic confinement potential. And an increment of the parameter α reduces all these physical quantities, while an increment of the parameter σ enhances them, but not for geometric factor. In addition, it is found that one can control the optical properties of QW by tuning these parameters.     

Piecewise-constant approximation of the potential profile of multiple quantum well intrinsic heterostructures

Knowledge of the energy band diagram is very important in semiconductor physics due to the fact that the band diagram influences almost all parts of the physics of a semiconductor device. In this paper we examine a piecewise-constant approximation of the potential profile through a comparison with a comprehensive self-consistent model, with regard to the active regions of QW semiconductor lasers and amplifiers. The validity of this approximation is then defined, thus giving an insight into the physics of QW structures.     

Transient electron population and optical properties in a semiconductor quantum well

We investigate the transient behaviors of the dispersion and the absorption in a three-level GaAs/AlGaAs semiconductor quantum well system. It is found that the Fano interference and the energy splitting affect the transient behaviors dramatically, which can be used to manipulate efficiently the gain-absorption coefficient and group velocity of the probe field. The dependence of transient electron population on the Fano interference and the energy splitting is also discussed.     

Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors

We examined theoretically band structure and discrete dopant effects in the quantum well infrared photodetector (QWIP) and the quantum dot infrared photodetector (QDIP). We find that in QWIPs discrete dopant effects can induce long wavelength infrared absorption through impurity assisted intra-subband optical transitions. In QDIPs, we find that a strategically placed dopant atom in a quantum dot can easily destroy the symmetry and modify the selection rule. This mechanism could be partially responsible for normal incidence absorption observed in low-aspect-ratio quantum dots.     

非等效折射近似的多量子阱波导色散关系

本文导出了任意折射分布的多量子阱波导芯子区域的转移矩阵,用非等效折射近似得到了TE和TM两种偏振的色散关系.理论的精确性经数值计算比较证明是完全可靠的.     

Carrier transport effects and dynamics in multiple quantum well optical amplifiers

The gain recovery dynamics of multiple quantum well semiconductor optical amplifiers, following gain compression caused by ultrashort optical pulse excitation, have been studied for several devices of different structures. Fast, slow, and intermediate time constants are identified. The fast component (0.6 to 0.9 ps) corresponds to cooling of the dense, inverted electron-hole plasma. The slow component (150 to 300 ps) corresponds to replenishment of carriers from the external bias supply, with the dynamics dominated by spontaneous recombination (primarily Auger) of the electron-hole plasma. The intermediate time constant (2 to 14 ps) is caused by carrier capture by the quantum wells and is structure-dependent. For most of the devices, the capture process is dominated by diffusion-limited transport in the cladding/barrier region. The variation of carrier density and temperature also affects the refractive index profile of the devices and, hence, affects the waveguiding properties. Dynamical variation of the mode confinement factor is observed on the fast and slow timescales defined above.     

The linear optical properties in quantum dots under a single coupling field

Using the density matrix method, the linear optical properties of truncated pyramid quantum dots have been investigated when an additional coupling field is introduced. The absorption coefficients and refractive index changes are strongly affected by the amplitude of the coupling field and the phase difference between the probe and coupling fields. The numerical results indicate that negative absorption and transparency can be obtained when both of the probe and coupling fields are in resonance with the quantum dots.     

The effects of hydrostatic pressure and intense laser field on the linear and nonlinear optical properties of a square quantum well

In this paper, the effects of hydrostatic pressure, temperature and intense laser field on the linear and nonlinear optical processes in the conduction band of a square quantum well are numerically investigated in the effective mass approximation. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results are presented for typical square GaAs/Al_xGa_1?xAs single quantum well system. The nonlinear optical absorption and refractive index changes depending on the hydrostatic pressure and intense laser field are investigated for two different temperature values. The results show that the intense laser field, the hydrostatic pressure and the temperature have a significant effect on the optical characteristics of these structures.     

能级填充对量子阱光学性质的影响

在特殊设计的三势垒双势阱结构中，利用来自发射极的电子注入和电子向收集极的共振隧穿 逃逸调控量子阱不同子能级上的填充状态，发现激发态上的电子占据起抑制量子限制Stark 效应的作用.在极低偏压下，量子阱中少量过剩电子诱发了用简单带—带跃迁无法解释的光致发光光谱行为. 关键词： 共振隧穿 光致发光 量子限制Stark效应 过剩电子     

Crystallographic orientation-dependent optical properties of GaInSb mid-infrared quantum well laser

The optical properties of compressively strained GaInSb/GaInAlSb quantum well (QW) laser are numerically studied in different crystal orientations solving envelope function equation using finite difference method. The simulation results demonstrate that there is a strong correlation between the optical gain and its emission wavelength with crystal orientation of the QW. The maximum and minimum optical gains are evaluated in the (1 1 3) and (1 1 1) crystal orientations, respectively, due to band mixing effects. The peak emission wavelength can be tuned from 2.4 μm to 2.25 μm by changing the crystal orientation from (1 1 0) to (1 1 1). Typical optical gains are evaluated 3115, 3080, 2790, 3415, and 2940 cm^?1 in (0 0 1), (1 1 0), (1 1 1), (1 1 3), and (1 3 1) crystal orientations, respectively, when the injection carrier density is 3.5 × 10¹⁸ cm^?3. The highest optical power and lower threshold current are obtained in (1 1 3) orientation for the number of quantum wells three.     

Improved nonvolatile holographic storage sensitivity of near-stoichiometric LiNbO3：Fe：Mn crystals

Intersubband linear and third-order nonlinear optical properties of conical quantum dots with infinite barrier potential are studied. The electronic structure of conical quantum dots through effective mass approximation is determined analytically. Linear, nonlinear, and total absorption coefficients, as well as the refractive indices of GaAs conical dots, are calculated. The effects of the size of the dots and of the incident electromagnetic field are investigated. Results show that the total absorption coefficient and the refractive index of the dots largely depend on the size of the dots and on the intensity and polarization of the incident electromagnetic field.     

InAs/GaSb量子阱的能带结构及光吸收

采用八能带K-P理论以及有限差分方法,研究了沿[001]方向生长的InAs/GaSb二类断带量子阱体系的能带结构、波函数分布和对[110]方向线性偏振光的吸收特性.研究发现,通过改变InAs或GaSb层的厚度,可有效调节该量子阱体系的能带结构及波函数分布.计算结果表明,当InAs/GaSb量子阱的导带底与价带顶处于共振状态时,导带基态与轻空穴基态杂化效应很小,且导带基态与第一激发态的波函数存在较大的重叠,导带基态与第一激发态之间在布里渊区中心处的跃迁概率明显大于导带底与价带顶处于非共振状态时的跃迁概率.研究结果对基于InAs/GaSb二类断带量子阱体系的中远红外波段的新型级联激光器、探测器等光电器件的设计具有重要意义.     

Subband-level renormalization and absorptive optical bistability in semiconductor multiple quantum well structures

A microscopic theory of many-body effects in the lowest subbands of semiconductor multiple quantum well structures is presented. The renormalized subband levels are calculated for a broad temperature range and optical bistability due to induced absorption is predicted.     

Nonlocal optical properties in AlGaAs/GaAs coupled quantum well nanostructures

Nonlocal intersubband optical absorption properties in AlGaAs/GaAs coupled quantum well (CQW) nanostructures are investigated for a p-polarized light in the case of taking spatial nonlocality of optical response into account. The numerical results show that the spatial nonlocality of optical response can lead optical spectrum lines to have a radiation shift due to the nonlocal effects, and the spatial nonlocality is associated closely with the coupling effects between the potential wells of the CQW system. The dependence of the radiation shift on structure parameters of the CQW is clarified. It is also demonstrated that the maximal radiation shift and the least optical absorbance can be obtained by optimizing structure parameters of the CQW. These results may be constructive in designing nanomaterials with various nonlocality and observing the spatial nonlocal effects in experiment.     

Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED

GaN-based irregular multiple quantum well(IMQW) structures assembled two different types of QWs emitting complementary wavelengths for dichromatic white light-emitting diodes(LEDs) are optimized in order to obtain near white light emissions.The hole distributions and spontaneous emission spectra of the IMQW structures are analysed in detail by fully considering the effects of strain,well-coupling,valence band-mixing and polarization effect through employing a newly developed theoretical model from the k · p theory.Several structure parameters such as well material component,well width,layout of the wells and the thickness of barrier between different types of QWs are employed to analyse how these parameters together with the polarization effect influence the electronic and the optical properties of IMQW structure.Numerical results show that uniform hole distributions in different types of QWs are obtained when the number of the QWs emitting blue light is two,the number of the QWs emitting yellow light is one and the barrier between different types of QWs is 8nm in thickness.The near white light emission is realized using GaN-based IMQW structure with appropriate design parameters and injection level.