Polarization effects in thin layers of SiO2 and Al2O3

For film metal-dielectric-metal and hybrid-metal-dielectric-semiconductor systems based on pyrolytic fully grown films of SiO₂ and Al₂O₃ the dependence of the remanent polarization coefficient on the magnitude of the field in the films and the short circuit time was investigated. The nature of relaxation processes related to remanent polarization effects was analyzed.The authors take the opportunity to express their gratitude to A. S. Bashakidze for help in carrying out the measurements.     

Accumulation and flow of charge in MOS structures with Al2O3 and SiO2-Al2O3 films on silicon

A expérimental study has been carried out on the processes involved in the accumulation and flow of charge in MOS structures with thin films of Al₂O₃ and SiO₂-Al₂O₃ under various polarization conditions. The activation energy, the frequency factors, the sites of the trapping centers of the polarization charge, and the character of the flow of charge on thermal depolarization have been studied. It is shown that in a structure with a double-layer dielectric, the instability of the charge cannot be explained by the Maxwell-Wagner polarization model in its pure form because of the accumulation of charge in the spatially distributed trapping centers throughout the Al₂O₃ film. The parameters of the traps at the interface between the dielectrics have been determined and the contribution made to the instability of the charge by the migration of ions in these particular structures has been evaluated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 7–14, April, 1978.     

微弧等离子喷涂碳纳米管/纳米Al2O3-TiO2复合涂层的吸波性能研究

将碳纳米管与纳米Al₂O₃-TiO₂陶瓷粉末超声共混制备了碳纳米管/纳米Al₂O₃-TiO₂复合粉末,测试了复合粉末在2—18GHz波段的电磁参数.研究表明：随着碳纳米管质量分数的增加,碳纳米管/纳米Al₂O₃-TiO₂复合粉末的复介电常数和损耗角不断增大.当碳纳米管质量分数和厚度增加时,复合粉末对电磁波的反射率峰值先增加后减小,而谐振频率不断向低频移动.采用微弧等离子喷涂制备了7wt%碳纳米管/纳米Al₂O₃-TiO₂复合吸波涂层,当厚度为1.5mm时,涂层最小反射率为-24.0dB,当厚度为2.0mm时,涂层小于-10dB的频带宽为3.60GHz,当温度为500℃高温时,1.0mm厚的涂层最小高温反射率为-12.2dB,小于-10dB频带宽为2.0GHz.复合涂层的实际厚度D与理论厚度d呈线关系：d=0.898D+0.515. 关键词： 等离子喷涂 碳纳米管 2O₃-TiO₂')" href="#">纳米Al₂O₃-TiO₂ 吸波性能     

A study of lattice defects in solids belonging to Al2O3−B2O3 and Al2O3−SiO2 systems by thermoluminescence experiments

Summary Spectrally resolved thermoluminescent emission has been investigated in solids belonging to Al₂O₃−B₂O₃ and Al₂O₃−SiO₂ systems. These solids, which are characterized by a structure like that of alumino-silicate mullite, contain a high density of oxygen and aluminum or boron lacunae. This fact favours the occurrence of both-sign interstitial ions acting as carrier traps. The results show a close similarity with those obtained when studying, with the same experimental method, the thermoluminescent emission of alumina. The overall analysis of data allows for reliable conclusions on the nature of crystal defects in these materials.     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er3+掺杂Al2O3体系和SiO2-Al2O3复合体系粉末. 实验结果表明:5 mol%的SiO2复合加入Al2O3抑制γ→θ和θ→α相转变. 掺0.1 mol%Er3+:Al2O3体系粉末,900℃烧结,在1.47-1.63 μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰,1000-1200℃烧结,劈裂为多峰PL谱. 掺0.1 mol%Er3+:SiO2-Al2O3复合体系粉末,在高达1200℃烧结,仍保持中心波长1.53 μm的单一宽峰PL谱,由于-OH更完全的脱除,PL强度较900℃烧结Al2O3体系,SiO2-Al2O3复合体系均提高1个数量级.     

XPS and auger spectroscopy studies on mixtures of the oxides SiO2, Al2O3, Fe2O3 and Cr2O3

X-ray photoelectron Spectroscopy (XPS) and X-ray-induced Auger Spectroscopy were utilized to examine qualitative and quantitative aspects involved in the surface analysis of mechanical mixtures of the title oxides. Consideration of O1s and OKVV bands of the mixtures makes it possible to distinguish between the single oxide components. The energy shift between the Fe₂O₃ and SiO₂ (or Al₂O₃) components is about twice as large in the OKVV region as in the O1s region. By way of contrast, Auger Spectroscopy analysis of the mixtures does not appear to enable a quantitative distinction between the constituent oxides to be made. Conversely, XPS analysis provides instead quantitative results, although these are affected by a relative error of ± 10%. A simple approach, based on intensity ratio measurements of the single O1s components, enables relatively accurate quantitative results to be obtained.It is shown that analysis of appropriate mixtures is a useful case study for investigations on surface and interface properties of real materials. Argon ion etching effects on the mixtures and on the title oxides analyzed separately are reported.     

Rotational dependences of line half-widths for CO and CO2 confined in SiO2/Al2O3 xerogel

The absorption spectra of CO and CO₂ confined in nanopores of SiO₂/Al₂O₃ xerogel have been measured using a Bruker IFS-125 HR Fourier spectrometer. Dependences of the half-width values on rotational quantum numbers and the line shift mean values are studied and compared with the data available in literature. Possible causes which can affect the rotational dependences are discussed.     

以Eu-苯甲酸-1,10-菲咯啉为掺杂剂的SiO2,SiO2-B2O3和SiO2-B2O3-Na2O体系材料的结构及Eu3+的发光性质

用溶胶-凝胶法制备以Eu-苯甲酸-1,10-菲咯啉为掺杂剂的SiO2,SiO2-B2O3和SiO2-B2O3-Na2O为基质的发光材料.材料经1000℃退火处理后,结构十分稳定.通过激发光谱和发射光谱、红外光谱、TEM、XRD研究了基质结构对Eu3 发光性能的影响.结果显示:在589和614 nm处显示Eu3 的特征发射带,对应于Eu3 的5D0→7Fj(j=1,2)跃迁;与直接掺入EuCl3的玻璃材料相比,以Eu-苯甲酸-1,10-菲咯啉为掺杂剂的玻璃材料,虽然Eu的掺杂量较小,但Eu的发光强度较大.与以SiO2为基质的玻璃材料相比,以SiO2-B2O3为基质的玻璃材料Eu3 的发光减弱,其红外光谱显示形成Si-O-B键,说明该结构对Eu3 的发光有猝灭作用,以SiO2-B2O3-Na2O为基质的玻璃材料Eu3 的发光明显增强,其红外光谱显示不存在SiOB键的振动吸收,可能是Na取代B的位置,形成Si-O-Na键,此结构对Eu3 的发光有一定的增强作用.     

石英衬底阳极氧化铝膜的制备及其光致发光的研究

报道了用15wt％H2SO4为电解液,在恒温0℃,40V电压条件下制备阳极氧化铝膜,用原子力显微镜观察其形貌,表明在简单条件下在石英衬底上制备了致密的氧化铝微晶膜。研究了不同电压条件下制备的氧化铝膜的常温光致发光,并监测了其激发光谱,发现其常温光致发光相对强度和发射峰位置与阳极氧化电压关系密切,有相对强度变小和发射峰位置红移的趋势,在40V电压条件下出现了356nm新的发射峰,而其不同的发射峰激发光谱都为210nm,说明其来源存在关联。详细分析了40V电压下的阳极氧化铝膜中出现的356,386nm近紫外发射,并认为其发光来源于与F心和F^ 心有关的氧缺陷。     

Surface modifications of crystalline SiO2 and Al2O3 induced by energetic heavy ions

Abstract

Glasses with composition × CoO.(0.25-x) CaO.0.75 B₂O₃ have been prepared over the range 0 ≤ x ≤ 0.25 containing 2 mol% of V₂O₅. Electron paramagnetic Resonance spectra of VO²⁺ of these glasses has been measured at X-band (ν ≈ 9.15 GHz) at room temperature and at liquid nitrogen temperature. Spin Hamiltonian parameters of the VO²⁺ ions have been calculated. It is found that for x ≤ 0.12 the octahedral symmetry of the V⁴⁺ site is improved. A part of these glasses were annealed at 473 K for 24 hours and EPR spectra were recorded and analysed.     

Comparison between N2 and O2 anneals on the integrity of an Al2O3/SiaN4/SiO2/Si memory gate stack

In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.     

Characterization of laser-induced plasma plume: Comparison between Al and Al2O3 targets

Characterization of the plasma plume produced by laser ablation from Al and Al₂O₃ targets was carried out on the basis of the line profile analysis of Al(I) (²P°–²S) emission. The spatial distribution and density parameters of electrons and Al atoms in the plume were obtained by comparing observed spectral line profiles with a theoretical calculation. The results showed different behavior for the Al and Al₂O₃ targets. The Al atoms from the Al₂O₃ target were populated in a smaller region than those from the Al target. PACS 52.38.MF; 52.70.Kz; 52.25.Os     

Site Preferences of Hyperfine Impurities in Ni2Al3 Phases

The site occupation of indium solutes in Ni₂Al₃-type compounds was determined using perturbed angular correlation of gamma rays. Measurements were made for compositions on both sides of the stoichiometric composition. Sites were identified through their quadrupole interactions. For transition-metal (TM) rich aluminides and galliumides, indium solutes occupy only one of two inequivalent trivalent-metal sites (Al or Ga). For TM-poor aluminides, indium solutes tend to locate at noncrystallographic sites such as in grain boundaries. For TM-poor galliumides, the solutes occupy nickel sites while close to the stoichiometric composition they also occupy sites on an empty Ni-sublattice. Composition dependences of site preference for indium solutes in Pt₂Al₃ and Ni₂Ga₃ are examined in terms of a recently developed thermodynamic model. This revised version was published online in September 2006 with corrections to the Cover Date.     

Nonstoichiometric interfaces and Al2O3 adhesion with Al and Ag

We have determined the relative stability of stoichiometric, oxygen-rich, and aluminum-rich Al/Al 2O (3) and Ag/Al 2O (3) interfaces from first principles. Stable structures vary significantly with oxygen chemical potentials. Computed works of adhesion agree reasonably well with sessile drop experimental values, including correlation with measured oxygen chemisorption effects on Ag. The ordering of predicted bond energies of the interfaces, ceramics, and metals seems consistent with monotonic and fatigue fracture experiments.     

FIR Fourier spectroscopic studies of the adsorption of HCN on SiO2 and Al2O3 surfaces

For the first time, FIR spectroscopy has been applied successfully to surface and adsorption studies. Valuable information is obtained on the surface structure of the adsorbents silica and alumina as well as on the structure and the intermolecular vibrational behaviour of the adsorption complexes formed by these adsorbents and HCN.     

Structural and Tribological Properties of Polyimide/Al2O3/SiO2 Composites in Atomic Oxygen Environment

Effects of atomic oxygen (AO) irradiation on the structural and tribological behaviors of polyimide/Al₂O₃/SiO₂ composites were investigated in a ground-based simulation facility, in which the energy of AO was about 5 eV and the flux was 7.2 × 10¹⁵ cm^?2.s^?1. The structural changes were characterized by X-ray photoelectron spectroscopy (XPS) and attenuated total-reflection FTIR (FTIR-ATR), while the tribological changes were evaluated by friction and wear tests as well as scanning electron microscopy (SEM) analysis of the worn surfaces. It was found that AO irradiation induced the oxidation and degradation of polyimide (PI) molecular chains. The destructive action of AO changed the surface chemical structure, which resulted in changes of the surface morphology and chemical composition of the samples. Friction and wear tests indicated that AO irradiation decreased the friction coefficient but increased the wear rate of both pure and Al₂O₃/SiO₂ filled PIs.