Atom geometry of nanostructured Fe films grown on c(2 × 2)-N/Cu(1 0 0) surface: An investigation by X-ray absorption spectroscopy with multishell analysis

We investigated the growth of Fe nanostructured films on c(2 × 2)-N/Cu(1 0 0) surface with Fe K-edge X-ray absorption fine structure (XAFS) in the near edge and in the extended energy region. The high photon flux of the incident X-rays allowed us to perform multishell analysis of the XAFS oscillations for Fe coverage Θ_Fe < 1 ML. This data analysis yields a detailed investigation of the atom geometry and some insights in the film morphology. At Θ_N < 0.5 ML (N saturation coverage) there is absence of contribution to XAFS from N atoms. First shell analysis of linearly polarized XAFS gives Fe-Fe (or Fe-Cu) bond length values varying between R₁ = 2.526 ± 0.006 Å at the highest Fe coverage (3 ML ) and R₁ = 2.58 ± 0.01 Å at Θ_Fe = 0.5 ML, Θ_N = 0.3 ML, with incidence angle Θ = 35°. These values are different from the case of bcc Fe (R = 2.48 Å), and compatible with fcc Fe (R₁ = 2.52 Å) and fcc Cu (R₁ = 2.55 Å). At the Fe lowest coverage (Θ_Fe = 0.5 ML) the dependence of R₁ on the incidence angle indicates expansion of the outmost layer. Near edge spectra and multishell analysis can be well reproduced by fcc geometry with high degree of static disorder. At N saturation pre-coverage (Θ_N = 0.5 ML) the XAFS analysis has to keep into account the Fe-N bonding. The results suggest two different adsorption sites: one with Fe in a fcc hollow site, surrounded by other metal atoms as nearest neighbours, and one resulting from an exchange with a Cu atom underneath the N layer.     

Initial stages of iron silicide formation on the Si(1 0 0)2 × 1 surface

The initial stages of iron silicide growth on the Si(1 0 0)2 × 1 surface during solid-phase synthesis were investigated by photoelectron spectroscopy using synchrotron radiation. The experiments were made on iron films of 1-50 monolayer (ML) thickness in the temperature range from room temperature to 750 °С. Our results support the existence of three stages in the Fe deposition on Si(1 0 0) at room temperature, which include formation of the Fe-Si solid solution, Fe₃Si silicide and an iron film. The critical Fe dose necessary for the solid solution to be transformed to the silicide is found to be 5 ML. The solid-phase reaction was found to depend on the deposited metal dose. At 5 ML, the reaction begins at 60 °С, and the solid-phase synthesis leads to the formation of only metastable silicides (FeSi with the CsCl-type structure, γ-FeSi₂ and α-FeSi₂). A specific feature of this process is Si segregation on the silicide films. At a thickness of 15 ML and more, we observed only stable phases, namely, Fe₃Si, ε-FeSi and β-FeSi₂.     

Effect of swift heavy ion irradiation in Fe/W multilayer structures

Present study reports effect of swift heavy ion irradiation on structural and magnetic properties of sputtered Fe/W multilayer structures (MLS) having bilayer compositions of [Fe(20 Å)/W(10 Å)]_5BL and [Fe(20 Å)/W(30 Å)]_5BL. These MLS are irradiated by 120 MeV Au⁹⁺ ions up to fluence of 4 × 10¹³ ions/cm². X-ray reflectivity (XRR), wide-angle X-ray diffraction (WAXD), cross-sectional transmission electron microscopy (X-TEM) and magneto optical Kerr effect (MOKE) techniques are used for structural and magnetic characterization of pristine and irradiated MLS. Analysis of XRR data using Parratt's formalism shows a significant increase in W/Fe interface roughness. WAXD and X-TEM studies reveals that intra-layer microstructure of Fe-layers in MLS becomes nano-crystalline on irradiation. MOKE study shows increase in coercivity at higher fluence, which may be due to increase in surface and interface roughness after recrystallization of Fe-layers.     

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 °C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 Å each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 °C in a step of 100 °C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 °C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 °C due to the formation of TiNi₃ and Ti₂Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes.     

Ordering temperature of L10-type FePt films reduced by CuO addition

Effects of addition of CuO layers in L1₀-type FePt thin films are investigated. The ordering temperature of L1₀-type FePt films can be reduced by CuO addition. The coercivities of 0.78 and 0.82 T are achieved in [Pt(10 Å)/Fe(14 Å)/CuO(2 Å)]₁₀ film annealed at 550 °C for 20 min and [Pt(10 Å)/Fe(15 Å)/CuO(3 Å)]₁₀ film annealed at 600 °C for 20 min, respectively, and these values are compared to the coercivity of 0.8 T in [Pt(10 Å)/Fe(13 Å)]₁₀ film annealed at 650 °C. The thickness of Fe and CuO layers strongly influences the ordering temperature of L1₀-type FePt and the magnetic properties of the films. The addition of CuO not only brings microstructure and surface morphology changes of FePt film, but also lowers the ordering temperature.     

Effect of interfacial diffusion on microstructure and properties of FePt/B4C multifunctional multilayer composite films

FePt/B₄C multilayer composite films were prepared by magnetron sputtering and subsequent annealing in vacuum. By changing Fe layer thickness of [Fe/Pt]₆/B₄C films, optimal magnetic property (8.8 kOe and remanence squareness is about 1.0) is got in [Fe(5.25 nm)/Pt(3.75 nm)]₆/B₄C sample whose composition is Fe rich and near stoichiometric ratio. The characterizations of microstructure demonstrate that the diffusion of B and C atoms into FePt layer depends strongly on B₄C interlayer thickness. When B₄C interlayer thickness of [Fe(2.625 nm)/Pt(3.75 nm)/Fe(2.625 nm)/B₄C]₆ films is bigger than 3 nm, stable value of grain size (6-6.5 nm), coercivity (6-7 kOe) and hardness (16-20 GPa) is observed. Finally, the multifunctional single FePt/B₄C composite film may find its way to substitute traditional three-layer structure commonly used in present data storage technology.     

Magnetic anisotropy and X-ray magnetic circular dichroism of MnNi surface alloy: Ab initio studies

The magnetic properties of MnNi surface alloy grown on fcc Co(0 0 1) surface have been explored through the full potential linearized augmented plane wave (FLAPW) method. It has been found that one monolayer (ML) of Mn_0.5Ni_0.5 alloy on Co(0 0 1) surface has a ferromagnetic (FM) ground state. We suggest that the direct exchange coupling between Mn and Ni plays an essential role for the ferromagnetism. The vertical position of Mn is higher by 0.26 Å than that of Ni, i.e., the surface has a buckling geometry. In contrast to pure fcc Co(0 0 1) film which has in-plane magnetization, we have obtained that the magnetocrystalline anisotropy of MnNi/Co(0 0 1) due to spin-orbit interaction is perpendicular to the film surface and the magnetic anisotropy energy is 146 μeV/cell. In addition, the theoretically calculated X-ray magnetic circular dichroism (XMCD) is presented.     

Acquisition of vector hysteresis loops from micro-arrays of nano-magnets

A modified scanning Kerr microscope has been used as a static Kerr magnetometer to acquire in-plane vector hysteresis loops from square Si/Ta(50 Å)/Co₈₀Fe₂₀(40 Å)/Ni₈₈Fe₁₂(108 Å)/Ta(100 Å) elements with size ranging from 123 nm to 10 μm. The nanoscale elements were arranged in square arrays of 4 μm size. The laser beam was focused to a sub-micron spot, while polarization changes were recorded with an optical bridge detector containing a beam-splitting polarizer and two quadrant photodiodes. The coercive field exhibited a non-monotonic increase from 11 Oe in the 10 μm element to 170 Oe in the 123 nm elements. Loops acquired with the field applied parallel to the easy and hard in-plane uniaxial anisotropy axes were observed to become more similar in shape as the element size decreased.     

On the short-range order of the SiOx (0 ≤ x ≤ 2) surface

Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiO_x (0 ≤ x ≤ 2). SiO_x surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 Å for Si, two peaks at 1.62 Å and 2.65 Å for a-SiO₂ and three peaks centered at 1.6-1.7 Å, 2.1-2.2 Å and 2.65-3.04 Å for SiO_x. Peaks at 1.62 Å and 2.65 Å are assigned to Si-O and O-O nearest distances correspondently. Ratio of the area under the peak at 2.65 Å to the area under the peak at 1.62 Å turned out to be not constant but grows linearly with the composition parameter x. The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide.     

Structural and magnetic study of swift heavy ion irradiated W/Fe multilayer structure

The present study reports the effect of swift heavy ion irradiation on structural and magnetic properties of sputtered W/Fe multilayer structure (MLS) having bilayer compositions of [W(10 Å)/Fe(20 Å)]_10BL. The MLS is irradiated by 120 MeV Au⁹⁺ ions of fluences 1×10¹³ and 4×10¹³ ions/cm². Techniques like X-ray reflectivity (XRR), cross-sectional transmission electron microscopy (X-TEM) and DC magnetization with a vibrating sample magnetometer (VSM) are used for structural and magnetic characterization of pristine and irradiated MLS. Analysis of XRR data using Parratt’s formalism shows a significant increase in W/Fe layer roughness. X-TEM studies reveal that intra-layer microstructure of Fe layers in MLS becomes nano-crystalline on irradiation. DC magnetization study shows that with spacer layer thickness interlayer coupling changes between ferromagnetic to antiferromagnetic.     

X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(0 0 1)

TiO₂ and TiN_xO_y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO₂[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 Å/min) of TiO₂ and (−40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ?-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.     

Magnetic anisotropy and electronic structure of iron films on W(1 1 0) by spin-polarized two-electron spectroscopy

Low-energy spin-polarized two-electron spectroscopy was applied to study the spin-dependent electronic structure of 3 ML and 50 ML epitaxial iron films grown on single crystal W(1 1 0). Such films are known to show an in-plane rotation of the easy magnetization axis between thicknesses [M. Donath, Journal of Physics: Condensed Matter 11 (48) (1999) 9421; D. Sander, Journal of Physics: Condensed Matter (20) (2004) R603, O. Fruchart, J.P. Nozieres, D. Givord, Journal of Magnetism and Magnetic Materials 207 (1999) 158, H.J. Elmers, U. Gradmann, Applied Physics A: Materials Science & Processing 51 (3) (1990) 255]. Momentum distributions of correlated electron pairs I(k₁, k₂) excited from the films by 25 eV primary electrons were measured for two opposite polarizations of the incident beam. Energy and momentum conservation laws in the electron scattering events allow the extraction of information on the spin-dependent Bloch spectral density function of the valence electrons in iron films. The observed difference in the electronic structure of these two films is most likely due to the different crystal structures of the films.     

Progressive changes in atomic structure and gap states on Si(0 0 1) by Bi adsorption

From ab initio studies employing the pseudopotential method and the density functional scheme, we report on progressive changes in geometry, electronic states, and atomic orbitals on Si(0 0 1) by adsorption of different amounts of Bi coverage. For the 1/4 ML coverage, uncovered Si dimers retain the characteristic asymmetric (tilted) geometry of the clean Si(0 0 1) surface and the Si dimers underneath the Bi dimer have become symmetric (untilted) and elongated. For this geometry, occupied as well as unoccupied surface states are found to lie in the silicon band gap, both sets originating mainly from the uncovered and tilted silicon dimers. For the 1/2 ML coverage, there are still both occupied and unoccupied surface states in the band gap. The highest occupied state originates from an elaborate mixture of the p_z orbital at the Si and Bi dimer atoms, and the lowest unoccupied state has a ppσ* antibonding character derived from the Bi dimer atoms. For 1 ML coverage, there are no surface states in the fundamental bulk band gap. The highest occupied and the lowest unoccupied states, lying close to band edges, show a linear combination of the p_z orbitals and ppσ* antibonding orbital characters, respectively, derived from the Bi dimer atoms.     

Perpendicular magnetic anisotropy and magnetic proximity effect in Pt1−δFeδ/Co multilayer films

The perpendicular magnetic anisotropy (PMA) and magnetization in Pt_1−δFe_δ/Co (δ=0, 0.017, 0.04 and 0.06) multilayer films have been investigated. It is found that, on adding a small amount of Fe into the Pt layers, Pt/Co multilayer films maintain well-defined PMA at both 5 and 300 K along with significantly enhanced magnetization even at room temperature, which is far greater than the Curie temperature of Pt_1−δFe_δ dilute alloys. Further study demonstrates that the large enhancement of the magnetization in the Fe doped Pt/Co multilayers at 300 K arises from the bulk moment of the Pt_1−δFe_δ layers at the interface region, where the ferromagnetic order persists up to room temperature due to the strengthened exchange interactions between Fe atoms via strongly polarized Pt near the Pt_1−δFe_δ/Co interfaces. For the Pt_0.96Fe_0.04/Pt multilayers, the magnetically ordered region in each Pt_0.96Fe_0.04 layer extends over at least 10 Å from the interface at room temperature.     

Magnetic shape anisotropy calculations of Fe nanostructures at the Si/Fe(1 1 1) interface

The influence of Si capping layers on the magnetic properties of thin Fe films grown on Si(1 1 1) has been studied by means of shape anisotropy calculations. Fe surface morphology simulations are realized using experimental STM data. Surface modifications induced by the interaction between the Si overlayer and the Fe surface are performed in agreement with the model proposed in a previous work by Stephan et al. [J. Magn. Mater. 293 (2005) 746]. Calculations of the uniaxial anisotropy energy constant K_u are then performed on the modified Fe surface morphology for different Si deposition geometries as proposed in the model. The relevant data deduced by this method such as anisotropy constants and their related easy axis direction, are directly compared to the experimental ones obtained by ex situ magneto-optical Kerr effect (MOKE) measurements at room temperature using the transverse bias initial inverse susceptibility and torque (TBIIST) method. We show that a very good agreement between those results leads to a confirmation of the proposed model.     

The interaction of carbon with Si(1 1 1):As and Si(1 1 1):H surfaces, a theoretical study

Density functional theory calculations have been performed to determine the adsorption site of carbon at the Si(1 1 1):As and Si(1 1 1):H surfaces at different coverages. The As- and H-passivated surfaces were simulated by replacing the topmost Si layer by As or by saturating the Si dangling bonds with hydrogen atoms, respectively. Different high symmetry sites were considered. Carbon was placed successively in the fourfold (T₄) or threefold coordinated (H₃), the ontop (T₁) sites or substituted for a Si atom in the S₅ position located underneath the Si adatom in the T₄ site. We found that the preferred carbon adsorption site depends on the coverage of the passivated surfaces. At low coverages i.e. at 1/16 ML and 1/3 ML, it prefers a distorted T₄ position whereas at 1 ML, it occupies an H₃ site. This contrasts with the clean surface where the most energetically favored site is the S₅ at all coverages. Carbon adsorption induces a significant change in the structural geometry of the surface atoms, leading to a charge re-arrangement in the surface layers.     

Structure of PtFe/Fe double-period multilayers investigated by X-ray diffraction, reflectivity, diffuse scattering and TEM

Double-period [(Pt 1.7 nm/Fe 0.9 nm)₅Fe(t_Fe2)]₈ and [(Pt 1.8 nm/Fe 0.6 nm)₅Fe(t_Fe2)]₈ multilayers with different thickness t_Fe2 (between 0.23 and 4.32 nm) of the additional Fe layers, prepared by combinatorial sputter deposition, show differences in the mosaic spread and the vertical interfacial roughness when deposited on native or thermally oxidised Si wafers. Simulations of the wide-angle X-ray scattering intensities revealed the presence of interdiffusion in the (Pt/Fe)₅ bilayers and systematic variations of the grain sizes, perpendicular to the film surface, as well as the rms variations of the two superlattice periods with the total film thickness. A comparison of ω-rocking scans shows an increase of the correlated vertical roughness of the (Pt/Fe)₅ multilayers with the total multilayer thickness.     

Impact of O2 exposure on surface crystallinity of clean and Ba terminated Ge(1 0 0) surfaces

In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO₂ of 10⁻² Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O₂ exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.     

Structural and electrical properties of evaporated Fe thin films

Series of Fe thin films have been prepared by thermal evaporation onto glass and Si(1 0 0) substrates. The Rutherford backscattering (RBS), X-ray diffraction (XRD), Scanning electron microscopy (SEM) and the four point probe techniques have been used to investigate the structural and electrical properties of these Fe thin films as a function of the substrate, the Fe thickness t in the 76-431 nm range and the deposition rate. The Fe/Si samples have a 〈1 1 0〉 for all thicknesses, whereas the Fe/glass grows with a strong 〈1 0 0〉 texture; as t increases (>100 nm), the preferred orientation changes to 〈1 1 0〉. The compressive stress in Fe/Si remains constant over the whole thickness range and is greater than the one in Fe/glass which is relieved when t > 100 nm. The grain size D values are between 9.2 and 30 nm. The Fe/glass films are more electrically resistive than the Fe/Si(1 0 0) ones. Diffusion at the grain boundary seems to be the predominant factor in the electrical resistivity ρ values with the reflection coefficient R greater in Fe/glass than in Fe/Si. For the same thickness (100 nm), the decrease of the deposition rate from 4.3 to 0.3 Å/s did not affect the texture and the reflection coefficient R but led to an increase in D and a decrease in the strain and in ρ for both Fe/glass and Fe/Si systems. On the other hand, keeping the same deposition rate (0.3 Å/s) and increasing the thickness t from 76 to 100 nm induced different changes in the two systems.