Thermal-induced gradually changes in the optical properties of amorphous GeSe2 film prepared by PLD

Amorphous GeSe₂ film was prepared by the pulsed laser deposition technique and annealed at different temperature from 473 to 623 K. Using the ‘non-direct transition’ model proposed by Tauc, the short wavelength absorption edges of the films were well fitted and the optical band gaps () were determined. The Tauc slope of the as-deposited film is smaller than those of annealed films, which were proposed as an indicator of the degree of structural randomness of amorphous semiconductors. The refractive index and thickness of the films were calculated from the optical transmission spectra using the Swanepoel method. The index of refraction decreased while increased gradually with increasing the annealing temperature. The thermal-bleaching and thermal-contraction effects were observed, which were interpreted as the reduction in the density of homopolar bonds according to the Raman spectra analysis and the diminution of porous structure in the fragments of the annealed films, respectively.     

The 2ν4 overtone bands of FClO3

The high resolution infrared spectrum of the mono-isotopic species F³⁵Cl¹⁶O₃ has been studied in the region of the 2ν₄ overtone, from 2560 to 2680 cm⁻¹. The perpendicular component is strong and clearly observed while the parallel component is very weak and almost completely hidden by the perpendicular one. Their origins differ by 12.6 cm⁻¹, the being located at higher wavenumbers. The band is perturbed by the anharmonic interaction between the v₄ = 2, l₄ = ?2 and v₂ = v₄ = v₅ = 1, l₄ = l₅ = ±1 excited states, both of E symmetry. In total 3157 transitions have been assigned, 83% of these to , 12% to , and 5% to . The three bands have been analyzed simultaneously, taking into account the Fermi resonance effective between the excited states of E symmetry. The ro-vibration parameters of the excited states have been obtained, including the deperturbed band origins of and , at 2628.5890(4) and 2619.3342(5) cm⁻¹, respectively. The W₂₄₅ anharmonic constant is equal to 4.0161(4) cm⁻¹. The x₄₄+g₄₄ and x₂₄+x₄₅+g₄₅ anharmonicity constants have been derived from the obtained band origins and those of ν₄ and ν₂ + ν₅.     

Stretch-bend combination polyads in the ÃAu state of acetylene, C2H2

Rotational analyses are reported for a number of newly-discovered vibrational levels of the S₁-trans (ùA_u) state of C₂H₂. These levels are combinations where the Franck-Condon active and vibrational modes are excited together with the low-lying bending vibrations, and . The structures of the bands are complicated by strong a- and b-axis Coriolis coupling, as well as Darling-Dennison resonance for those bands that involve overtones of the bending vibrations. The most interesting result is the strong anharmonicity in the combinations of (trans bend, a_g) and (in-plane cis bend, b_u). This anharmonicity presumably represents the approach of the molecule to the trans-cis isomerization barrier, where ab initio results have predicted the transition state to be half-linear, corresponding to simultaneous excitation of and . The anharmonicity also causes difficulty in the least squares fitting of some of the polyads, because the simple model of Coriolis coupling and Darling-Dennison resonance starts to break down. The effective Darling-Dennison parameter, K₄₄₆₆, is found to increase rapidly with excitation of , while many small centrifugal distortion terms have had to be included in the least squares fits in order to reproduce the rotational structure correctly. Fermi resonances become important where the K-structures of different polyads overlap, as happens with the 2¹3¹B¹ and 3¹B³ polyads (B = 4 or 6). The aim of this work is to establish the detailed vibrational level structure of the S₁-trans state in order to search for possible S₁-cis (¹A₂) levels. This work, along with results from other workers, identifies at least one K sub-level of every single vibrational level expected up to a vibrational energy of 3500 cm⁻¹.     

The effect of Ag addition on the optical properties of Se90Te10 films

Se₉₀Te_10−xAg_x (0 ≤ x ≤ 6) compositions were prepared by quenching technique. Thin films with different thicknesses of the obtained compositions were deposited on dry clean glass substrates by thermal evaporation technique. Energy dispersive X-ray spectroscopy (EDX) indicates that samples are nearly stoichiometric. X-ray diffraction patterns indicate that they are in the amorphous state. The optical constants, the refractive index n and the absorption index k, have been calculated from transmittance T and reflectance R through the spectral range of 400-2500 nm for the studied films with different thicknesses (165-711 nm). From the analysis of refractive index n data, high frequency dielectric constant ?_∞ was determined. Both ?_∞ and n are found to decrease with the increase of Ag content. The optical band gap is calculated for all compositions from the absorption coefficient analysis. The effect of the Ag addition on the obtained optical parameters has been discussed. The analysis of absorption index k data, revealed the existence of allowed indirect transitions for all compositions. It is indicated also that increase with increasing Ag content.     

Rotational spectrum of HCBr produced by 193-nm laser photolysis of bromoform

The pure rotational spectrum of bromomethylene (HCBr) was studied by kinetic microwave spectroscopy between 420 and 472 GHz. The HCBr radical was produced by 193-nm ArF laser photolysis of bromoform (CHBr₃). More than 130 rotational transitions for both and species in the ground vibrational state were measured involving 1?J?33 and 0?K_a?5. The spectra were well described by an S-reduced Watson Hamiltonian in the I^r representation including the nuclear quadrupole and spin-rotation hyperfine terms. Rotational, centrifugal distortion, nuclear quadrupole and spin-rotation coupling constants were derived for both and species in the ground vibrational state.     

Problems with power content beam parameter product

The M² beam propagation factor is widely used to characterize the quality of laser radiation and its propagation. When M² is defined by the second-moments, M² ? 1 holds in the paraxial approach. For many applications it is more convenient to use the power content values (normally η = 86.5%), also proposed by ISO. For the corresponding power content factor, it is often assumed that also holds. We have demonstrated previously that for a superposition of two coherent Gauss-Laguerre modes with radial symmetry, the 86.5% value of [6]. In recent years, has also been presented experimentally for a superposition of axially shifted Gaussian beams [7]. The problems with power content for axial superposition of Gaussian beams are discussed. In this paper it is shown that the 86.5% power content value can not be smaller than one for a coherent superposition of axially shifted Gaussian beams with radial symmetry presented in Ref. [7]. A superposition of two Gaussian beams with different waists and without shift is also discussed, and the corresponding of such beam can be smaller than one, depending strongly on the power content value η. For low power content values η and a large (or very small) ratio of the two different waists approaches zero. These investigations demonstrate that is not a suitable parameter to characterize laser radiation.     

Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4

We present the infrared and Raman study of the optical phonon modes of the defective compounds ZnGa₂Se₄ and ZnGa₂S₄. Most of the compounds have been found to crystallize in the thiogallate structure (defect chalcopyrite) with space group where all cations and vacancies are ordered. For some Zinc compounds a partially disordered cationic sublattice with various degrees of cation and vacancy statistical distribution, which lead to the higher symmetry (defect stannite), has been reported. For ZnGa₂Se₄ we have found three modes of A symmetry, showing Raman activity only. In addition, we have observed each five modes of B and E symmetry, showing infrared as well as Raman activity. The number of modes and their symmetry assignment, based on polarized measurements, clearly indicate space group for the investigated crystals of ZnGa₂Se₄.Regarding ZnGa₂S₄ we have found three modes exclusively showing Raman activity (2A⊕1B₁), and only eight modes showing infrared as well as Raman activity (3B₂⊕5E). The assignment of the modes has been derived by analyzing the spectral positions of the vibrational modes in comparison to a number of compounds. From the number and symmetry assignment of the optical phonon modes we confirm that ZnGa₂S₄ most likely crystallizes in space group .     

Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies

Cyclotron resonance at microwave frequencies is used to measure the band mass (m_b) of the two-dimensional holes (2DHs) in carbon-doped (100) GaAs/ Al_xGa_1−xAs heterostructures. The measured m_b shows strong dependences on both the 2DH density (p) and the GaAs quantum well width (W). For a fixed W, in the density range (0.4×10¹¹ to 1.1×10¹¹ cm⁻²) studied here, m_b increases with p, consistently with previous studies of the 2DHs on the (311)A surface. For a fixed , m_b increases from 0.22m_e at to 0.50m_e at , and saturates around 0.51m_e for .     

Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTe_xS_1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTe_xS_1 − x quantum dots are also determined.     

Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO

Deep level transient spectroscopy (DLTS) has been employed to study electron traps in hydrothermally grown n-type ZnO samples after thermal treatments up to 1500 °C. Schottky barrier contacts were formed by e-beam evaporation of Pd, followed by DLTS and secondary ion mass spectrometry (SIMS) measurements in order to investigate possible correlations between electron traps in the upper part of the band gap and the concentration of the most prominent impurities. The DLTS results show three different levels having energy positions of , , and (E_c denotes the conduction band edge). The SIMS results showed that the most pronounced impurities were Li, Al, Si, Mg, Fe, Mn, and Ni with concentrations up to . A decrease in the level is observed after temperature treatments above 1300 °C, and in the same temperature range the Li concentration drops from ∼10¹⁷ to . However, based on absolute concentration values an association between Li and the level can be ruled out. In contrast, the level, which is not stable above 1300 °C, may be associated with Li but further experimental data are needed to substantiate this assignment. The level occurred in selected samples and is presumably impurity-related but no correlation was found with the main impurities detected by SIMS. Except for Li, the concentration of all the impurities remained essentially constant as a function of heat treatment temperature.     

Microstructure of epitaxial scandium nitride films grown on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on (1 1 1)-oriented silicon substrates by molecular beam epitaxy (MBE), using ammonia as a reactive nitrogen source. Film microstructure was investigated using X-ray diffraction (XRD). The (1 1 1) ω-scan FWHM of 0.551° obtained for films grown at 850 °C is the lowest reported so far for ScN thin films. The principal orientation of ScN with respect to Si is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a 60° in-plane rotation of the ScN layer with respect to the Si substrate. However, some twinning is also present in the films; the orientation of the twinned component is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a ‘cube-on-cube’ orientation. The volume percentage of these twins in the films decreases with increasing film growth temperature.     

Temperature-dependent infrared absorption cross sections of methyl cyanide (acetonitrile)

Pressure broadened (1 atm. N₂) absorption cross sections and integrated band intensities have been derived from laboratory spectra of CH₃CN, recorded at 276, 298, and 323 K, covering 600-. The spectra were recorded at a resolution of using a commercial Fourier transform spectrometer and a custom flowing sample delivery system. We report integrated absorption cross sections for intervals corresponding to the most prominent bands, compare the results with previously reported values, and discuss error sources, which are estimated as ∼7% with systematic error the largest error source.     

Determination and analysis of dispersive optical constant of TiO2 and Ti2O3 thin films

Electron beam evaporation technique was used to prepare TiO₂ and Ti₂O₃ thin films onto glass substrates of thicknesses 50, 500 and 1000 nm for each sample. The structural investigations revealed that the as-deposited films are amorphous in nature. Transmittance measurements in the wavelength range (350-2000 nm) were used to calculate the refractive index n and the absorption index k using Swanepoel's method. The optical constants such as optical band gap , optical conductivity σ_opt, complex dielectric constant, relaxation time τ and dissipation factor tan δ were determined. The analysis of the optical absorption data revealed that the optical band gap E_g was indirect transitions. The optical dispersion parameters E_o and E_d were determined according to Wemple and Didomenico method.     

High-temperature structural evolution of caesium and rubidium triiodoplumbates

CsPbI₃ and RbPbI₃ were investigated by in situ powder diffraction within temperature ranges of 298-687 K and 298-714 K, respectively. Both compounds crystallize in orthorhombic Pnma symmetry and expand isotropically upon a heating, revealing almost the same relative change of the lattice parameters. A pronounced difference in the structural evolution close to 600 K was observed, namely, CsPbI₃ undergoes first-order reversible phase transformation PnmaPnma+Pm3¯mPm3¯m, whereas no transitions (except of the sample's melting) in RbPbI₃ were detected. An attempt to clarify the relation between the existence/absence of a phase transition and bulging out of the iodine environment around alkaline ions was undertaken.     

Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Thin films of SiO_x having thickness of 0.2 μm and oxygen content x=1.5 or 1.7 are prepared by thermal evaporation of SiO in vacuum. Then some samples are furnace annealed for various times (in the range ) at 770 and 970 K and some others are rapid thermal annealed at 970 K for 30 and 60 s. Photoluminescence (PL) measurements are carried out at room temperature using the 442 nm line of a He-Cd laser and the 488 nm of an Ar laser for excitation. The effect of the annealing conditions and wavelength of the exciting light on the shape of the PL from these films is explored. The deconvolution of the PL spectra measured with the 442 nm line from samples annealed at 770 K for reveals two distinct PL bands peaked at around 2.3 and 2.5 eV, which do not shift appreciably with increasing annealing time. In addition, at longer annealing times, a weak third band is resolved centred in the range 2.0-2.1 eV. It exists in the spectra of all samples annealed at 970 K being more prominent in the samples with x=1.5. The intensity of this band shows different dependences on the annealing time in the films with different initial composition. The results obtained are discussed in terms of radiative recombination via defect states in the SiO_x matrix (the 2.5 eV band) or at the a-Si-SiO_x interface (the 2.3 eV band). The band centred in the 2.0-2.1 eV range is related to recombination in amorphous silicon nanoparticles grown upon annealing.     

Magnetic properties of ErN films

We report a magnetization study of stoichiometric ErN nanocrystalline films grown on Si and protected by a GaN passivating layer. According to the temperature dependence of the resistivity the films are heavily doped semiconductors. Above 100 K the magnetization data fit well to a Curie-Weiss behavior with a moment expected within the free-ion Er³⁺ multiplet. Below 50 K the Curie-Weiss plot steepens to an effective moment corresponding to that in the crystal-field determined quartet ground state, and develops a clear paramagnetic Curie-Weiss temperature of about 4.5 K. Zero-field- and field-cooled magnetization curves and the AC susceptibility firmly establish a ferromagnetic ground state within that multiplet below a Curie temperature of . Due to the (1 1 1) texture of the film the comparison between the magnetization behavior, when the field is applied parallel and perpendicular to the film plane, gives new information about the magnetic structure. An arrangement of the moments according to the model derived from neutron diffraction for bulk HoN is strongly suggested.