A POSSIBLE WAY TO MEASURE LITHIUM ION DIFFUSION COEFFICIENT FOR Li INSERTION THIN FILM WITH UNKNOWN Li COMPOSITION: APPLICATION TO LiαCoO2 and WO3

In this paper, a new experimental method of lithium ion diffusion coefficient measurement for lithium intercalation thin film material is presented. This exper-imental method is feasible and can be applied to thin films with unknown lithium composition such as Li_αCoO₂ etc. To check its validity, we used the impedance spec-troscopy method to make a verification on the WO₃ thin film sample with known lithium composition.     

SIMS STUDY OF OXYGEN SPIRAL DIFFUSION C-TEXTURED Yba2Cu3O7-δ/SrTiO3 EPITAXIAL THIN FILM

Secondary ion mass spectroscopy was used to study the chemical diffusivity of 0¹⁸ in c-textured YBa₂Cu₃O_7-δ/SrTiO₃ epitaxial thin film. By fitting experimental data to the one- dimensional diffusion curve, the apparent diffusivity along the c-axis was obtained to be equal to l.02×10¹⁴cm²/sec when the temperature was 350℃. A computer analysis method was put forward to calculate the "spiral diffusion" process, and the diffusivity anisotopy of films with different mosaic size obtained. For a film of 7000×7000?² mosaic size, Dab was found to be ～3.55×10^-5xexp((-1.03 ev)/kT) cm²/sec. The calculated results reveal that the variation of the results of Dc is not the result of diffusivity anisotropy but of the difference in mosaic size.     

IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.     

POROUS AMORPHOUS FLUOROPOLYMER FILMS WITH ULTRALOW DIELECTRIC CONSTANT

With the development of ultralarge scale integrated circuit, new interlayer dielectrics with low dielectric constant for multilevel interconnections are required, instead of conventional SiO₂ films. For the sake of seeking perfect dielectrics, amorphous fluoropolymer (AF) thin film with a thickness of about 0.9μm has been prepared by spin-coating method, following the principle of phase separation. By capacitance-voltage (C-V) measurements the dielectric constant of the thin film is equal to 1.57 at 1 MHz, which is attributed to numerous pores contained in the film matrix. X-ray photoelectron spectroscopy (XPS) spectra show that after annealing, about 71% CF₃ groups in the AF film have decomposed into CF₂, CF, etc. This leads to the increase of CF₂ groups by three times and CF groups by 8% in the AF film. In a word, compared with the film without being annealed, about 25% carbon, 7% fluorine and 12% oxygen atoms will be lost after annealing at 400℃ for 30min.     

Precursor derived LiMn2O4 thin films as ionic conductor

Thin films of spinel LiMn₂O₄ have been fabricated using a metallorganic precursor. Crystalline films have been deposited on Au substrates to exhibit as the cathode in rechargeable thin film lithium batteries. The nucleation and growth of spinel LiMn₂O₄ crystallites were investigated with heat treatment of the deposited thin films. Film capacity density as high as 22 μAh/cm² was measured for LiMn₂O₄. The film heat treated at 700 °C were cycled electrochemically up to 30 cycles against Li metal without any degradation of the capacity. There were neither open area nor amorphous layers which prevent the Li⁺ions transfer at the boundaries in the LiMn₂O₄ thin film. The microscopic study revealed that (111) planes in the two grains directly bonded at the grain boundary which could proceed the lithium ion intercalation or deintercalation smoothly.     

PHASE TRANSITIONS IN Bi2Sr2(Cu1-zFez)O6+δ

We have investigated, by X-ray diffraction, a series of single crystals of Bi-based oxides with the nominal composition Bi₂Sr₂(Cu_1-zFe_z)O_6+δ(0≤z≤0.55). In this system we observed two structural phase transitions with the increase of the doping content. The first transition, from an incommensurate monoclinic phase to an incommensurate orthorhombic phase, occurs at a doping content of iron z_Fe=0.027. The second one corresponds to a phase transition from an incommensurate orthorhombic phase to a commensurate orthorhombic phase at z_Fe=0.34. The comparison of these results with those for more limited substitutions of Zn and Ni indicates the significant role of the insertion of the extra oxygen in the (Bi-O)_∞ double layers.     

NON-EQUILIBRIUM MICROWAVE RESPONSE OF Yba2Cu3O7-δ GRANULAR THIN FILMS UNDER MAGNETIC FIELDS

Microwave responses of YBa₂Cu₃O_7-δ(YBCO) granular film have been studied at the microwave frequency of 30.5 GHz. In the absence of a magnetic field the dependence of a normal microwave response on the bias current is observed at a temperature close to T_c. When a magnetic field ranged from 5.0 mT to 33.0 mT is applied, the responses broaden and shift toward a lower temperature. In the superconducting state, the responses were found to be highly dependent on the magnetic field. For the current equal to 5.0mA and a magnetic field above 17.0mT the response increases and did not vanish even at a very low temperature, the fact is believed to be correlated to the anisotropic character of the structure.     

Thin film solid oxide fuel cells

We have investigated the deposition of 91% ZrO₂ − 9% Y₂O₃ thin films by a variety of sputtering techniques for the application as electrolytes in thin film solid oxide fuel cells. The deposition by RF sputtering was accomplished by using an oxide target of the desired composition. The deposition rate in these initial tests was limited to 0.5 μm/hr and the morphology of the film was substantially modified by deposition rate and substrate temperature. Using DC magnetron sputtering we deposited metallic films from a metallic target with the desired chemical composition. We introduced oxygen into the sputtering chamber to reactively deposit the desired 91% ZrO₂ − 9% Y₂O₃ thin films; however, we encountered problems with target oxidation and growth rate reproducibility. We subsequently demonstrated that controlled oxidation of the metallic films could result in adhering, non porous yttria stabilized zirconia films. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

STUDY OF HALOGEN DOPING IN POLYCRYSTALLINE YBa2Cu3O7-δ

This paper presents systematically the doping effects of halogens in YBa₂Cu₃O_7-δ polycrystalline samples, with a series of concentrations of fluorine, chlorine, bromine or iodine. All samples were prepared by chemical method of citrate pyrolysis, which makes the halogen concentration in the samples more uniform. Samples doped with F have T_c as high as 94.5K, Cl, Br and I dopings also raise T_c to a certain extent. In addition, the influence of halogen doping on critical current density, morphology, constitution and so forth is discussed.     

Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

纯Cr2O3包覆Li4Ti5O12微球的制备及其储锂性能研究

The pure Cr₂O₃ coated Li₄Ti₅O₁₂ microspheres were prepared by a facile and cheap solutionbased method with basic chromium(III) nitrate solution (pH=11.9). And their Li-storage properties were investigated as anode materials for lithium rechargeable batteries. The pure Cr₂O₃ works as an adhesive interface to strengthen the connections between Li₄Ti₅O₁₂ particles, providing more electric conduction channels, and reduce the inter-particle resistance. Moreover, LixCr₂O₃, formed by the lithiation of Cr₂O₃, can further stabilize Li₇Ti₅O₁₂ with high electric conductivity on the surface of particles. While in the acid chromium solution (pH=3.2) modification, besides Cr₂O₃, Li₂CrO₄ and TiO₂ phases were also found in the final product. Li₂CrO₄ is toxic and the presence of TiO₂ is not welcome to improve the electrochemical performance of Li₄Ti₅O₁₂ microspheres. The reversible capacity of 1% Cr₂O₃-coated sample with the basic chromium solution modification was 180 mAh/g at 0.1 C, and 134 mAh/g at 10 C. Moreover, it was even as high as 127 mAh/g at 5 C after 600 cycles. At-20℃, its reversible specific capacity was still as high as 118 mAh/g.     

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so--gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl₃ to SbCl₃ at 1:2, are prepared by a sol--gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10⁸, 3.26×10⁸, 5.23×10⁸, and 6.97×10⁸ Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.     

ECR-PECVD制备Si3N4薄膜 沉积工艺的研究

The spatial distribution of the ECR plasma density has been measured by using an eccentric Langmuir probe.The result indicates that the plasma density is very uniform in the axis Z＝50cm and radial ＝12cm.Effect of the radial uniformity of plasma density on the uniformity of deposition rate and thin film thickness is analyzed.The repeatability to prepare silicon nitride thin film of a specified thickness is discussed.The relation of the deposition process with the deposition rate of silicon nitride thin film is investigated and the dependence of the practical application on process parameters has been obtained for the deposition thin film with ECR-PECVD technology.     

COHERENT OPTICAL PHONON EXCITATION BY FEMTOSECOND LASER PULSE IN YBa2Cu3O7-δ THIN FILMS

With a correlation of nonequilibrium carriers relaxation and coherent phonons displacive excitation, the coherent optical phonon oscillations in YBa₂Cu₃O_7-δ thin films excited by femtosecond laser pulse are simulated theoretically. It is revealed that as the oxygen concentration decreases, the coherent phonon oscillations become easier to be observed due to the decrease of the local coupling between the carriers and the lattice vibrations in the CuO₂ plane.     

EFFECTIVE POTENTIAL OF λφ41+3 AT ZERO AND FINITE TEMPERATURES

The effective potential of λφ⁴₁₊₃ model with both signs of parameter m² is evaluated at T=0 by means of a simple but effective method for regularization and renormalization. Then at T≠0, the effective potential is evaluated in imaginary time Green function approach, using the Plana formula. A critical temperature for restoration of symmetry breaking in the standard model of particle physics is estimated to be T_c≌510 GeV.     

Oriented growth of oxygen-free C60 crystallites on silicon substrates

This is the first report of preparation of C₆₀ fullerite films on silicon substrates coated by a layer of natural oxide. The crystallites are about 1 μm in size. The films were found to have an enhanced stability to atmospheric oxygen. The films were obtained by a modified method of discrete evaporation in a quasi-closed volume. The principal features of the method are the quasi-equilibrium condensation conditions, a high substrate temperature (up to 300 °C), and alternation of deposition with recrystallization in a single technological cycle. The method is characterized by high film condensation rates (up to 2000 ?/min) and an economical expenditure of the starting material. A study has been made of the surface structure and morphology, and of the depth profile of the film optical constants and elemental composition. Fiz. Tverd. Tela (St. Petersburg) 41, 354–359 (February 1999)     

CO2激光干涉检验轮胎面面形及双曲率半径

A torus is a kind of aspherical surface，different from quadratic rotary surface.It plays an important role in special optical systems.However，up to now there is no effective method to test its wavefront.In this paper，a method is proposed using CO₂ (10.6μm) IR interferometry to test a torus，whose curvature radii is different from submillimeter deducing to micrometer，the principle is also given.Then a example torus is tested in self-developed CO₂ laser spherical interferometer.Some interferograms are shown.According to these interferograms the wavefront error and the difference of two radii can be obtained and shown in this paper.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

基于Co3O4修饰SnO2纳米纤维的高响应和高选择性乙醇气体传感器

SnO₂ nanofibers were synthesized by electrospinning and modified with Co₃O₄ via impregnation in this work. Chemical composition and morphology of the nanofibers were systematically characterized, and their gas sensing properties were investigated. Results showed that Co₃O₄ modification significantly enhanced the sensing performance of SnO₂ nanofibers to ethanol gas. For a sample with 1.2 mol% Co₃O₄, the response to 100 ppm ethanol was 38.0 at 300℃, about 6.7 times larger than that of SnO₂ nanofibers. In addition, the response/recovery time was also greatly reduced. A power-law dependence of the sensor response on the ethanol concentration as well as excellent ethanol selectivity was observed for the Co₃O₄/SnO₂ sensor. The enhanced ethanol sensing performance may be attributed to the formation of p-n heterojunctions between the two oxides.     

POSITRON LIFETIME STUDIES OF Y1-xCaxBa2Cu3O7-δ AND Y1-xCaxBa2Cu3-xFexO7-δ

In this paper it is reported that the measurement of the bulk positron lifetime as a function of substitution content x in the temperature range from 70 to 220K was performed in two high-T_c superconducting systems, Y_1-xCa_xBa₂Cu_3-xFe_xO_7-δ and Y_1-xCa_xBa₂Cu₃O_7-δ. It was found that τ_B of both systems decreases significantly with x and the temperature dependence of τ_B is very weak in normal state. In lower temperature region (Tc), a dramatic x-dependent temperature variation of τ_B was observed in the Ca-substituted system: from a decrease of τ_B with decreasing T to an increase of τ_B. With increasing x, the temperature dependence of τ_B remains weak in the Ca- and Fe- substituted systems. Compared with the experimental data of positron lifetime in other substituted systems and the calculation of the positron density distribution, the authors suggest that positron bulk lifetime spectra behaviour can be interpreted by the physical model based on the transfer of electron density between the CuO₂ planes and Cu-O chains. Therefore, the study of positron lifetime spectra provides a useful means to detect the local charge density and to study the correlation between the electronic structure and the high-T_c superconductivity.