The silicon vacancy in SiC

The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.     

Defects in silicon: the role of vibrational entropy

Vibrational free energies are calculated from first-principles in the same Si periodic supercells routinely used to perform defect calculations. The specific heat, vibrational entropy, and zero-point energy obtained in defect-free cells are very close to the measured values. The importance of the vibrational part of the free energy is studied in the case of two defect problems: the relative energies of the H₂ and H₂^∗ dimers and the binding energy of a copper pair. In both cases, the vibrational entropy term causes total energy differences to change by about 0.2 eV between 0 and 800 K. We also comment on the rotational entropy in the case of H₂ and the configurational entropy in the case of the Cu pair. These examples illustrate the importance of extending first-principles calculations of defects in semiconductors to include free energy contributions.     

Interaction of Point Defects with Twin Boundaries in Copper

The interaction between small vacancy clusters and twin boundaries in copper is studied by using many-body potential developed by Ackland et aL for fcc metals. The interaction energies of single-, di- and tri-vacancy clusters with （111） and （112） twin boundaries are computed using well established simulation techniques. For （111） twins the vacancy clusters are highly repelled when they are on the adjacent planes, and are attracted when they are away from the boundary. In the case of （112） twins, vacancy clusters are more attracted to the boundary when they are near the boundary as compared to away from it. Vacancy clusters on both the sides of the boundary are also investigated, and it is observed that the clusters energetically prefer to lie on the off-mirror sites as compared to the mirror position across the twin.     

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

By means of low-temperature （10 K） Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski （CZ） silicon annealed at 1150-1250℃ in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.     

Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

Computer simulation of intrinsic defects in YAlO3 single crystal

Computer simulation techniques were used to investigate intrinsic defects in YAlO₃ single crystal. A set of short-range potential parameters were derived using a relaxed fitting procedure incorporating with the known crystal properties. These parameters were then applied within the framework of the shell model. The simulation results reveal that oxygen Frenkel disorder and the antisite defect of Al ion substituting the Y ion dominate the intrinsic defects in YAlO₃. An analysis of redox reactions corroborate that the oxidation is most likely to occur via forming interstitial oxygen, while the oxidation via filling oxygen vacancies and reduction reaction may predominate at high temperature. The activation energy of oxygen vacancy migration on conduction was also studied.     

Electronic Structures of PbMoOa Crystals with F-Type Colour Centres

Electronic structures of PbMoO4 crystals containing F-type colour centres with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational （DV-Xa） method. The calculated results show that F and F＋ centres have donor energy levels in the forbidden band. The optical transition energies are 2.166eV and 2.197eV, respectively, corresponding to the 580nm absorption bands in PbMoO4 crystal. The 580nm absorption band in PbMoO4 is originated from the F-type colour centres.     

Theoretical Study of Relativistic Retardation Effects： the Abnormal Fine Structure of OⅡ

Using multi-configuration Dirac-Fock and relativistic configuration interaction methods with high-order corrections, we report our precise calculation results of the fine-structure energy levels of the ground-state configuration of OⅡ（1s^22s^22p^3）. Our calculated fine-structure splittings of ^2D3/2,5/2 and ^2p1/2,3/2 are abnormal We elucidate that the transverse （Breit） interaction, i.e. relativistic retardation effect, plays an important role for the abnormal fine-structure splittings. Our calculation results are in good agreement with experimental measurements.     

The electrical activity of stacking faults in Czochralski silicon

A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.     

p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1−xInxN1−yAsy quaternary alloys. We show that the MgGa substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.     

Theory of complete orthonormal sets of relativistic tensor wave functions and Slater tensor orbitals of particles with arbitrary spin in position, momentum and four-dimensional spaces

Using the complete orthonormal basis sets of nonrelativistic and quasirelativistic orbitals introduced by the author in previous papers for particles with arbitrary spin the new analytical relations for the 2(2s+1)-component relativistic tensor wave functions and Slater tensor orbitals in position, momentum and four-dimensional spaces are derived, where s=1/2,1,3/2,2,… . The relativistic tensor function sets are expressed through the corresponding nonrelativistic and quasirelativistic orbitals. The analytical formulas for overlap integrals over relativistic Slater tensor orbitals in position space are also derived.     

Studies on the origins of the absorption spectra in PbWO4 crystal

The electronic structures and absorption spectra for both the perfect PbWO₄ (PWO) crystal and the three types of PWO crystals, containing V_Pb²⁻, V_O²⁺ and a pair of V_Pb²⁻-V_O²⁺, respectively, have been calculated using CASTEP codes with the lattice structure optimized. The calculated absorption spectra indicate that the perfect PWO crystal does not occur absorption band in the visible and near-ultraviolet region. The absorption spectra of the PWO crystal containing V_Pb²⁻ exhibit seven peaks located at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), respectively. The absorption spectra of the PWO crystal containing V_O²⁺ occur two peaks located at 370 nm and 420 nm. The PWO crystal containing a pair of V_Pb²⁻-V_O²⁺ does not occur absorption band in the visible and near-ultraviolet region. This leads to the conclusions that the 370 and 420 nm absorption bands are related to the existence of both V_Pb²⁻ and V_O²⁺ in the PWO crystal and the other absorption bands are related to the existence of the V_Pb²⁻ in the PWO crystal. The existence of the pair of V_Pb²⁻-V_O²⁺ has no visible effects on the optical properties. The calculated polarized optical properties are well consistent with the experimental results.     

Atomic structure of pre‐Guinier–Preston zones in Al alloys

We propose X‐ray absorption (XAS) measurements as a novel approach to determine the atomic structure of pre‐Guinier–Preston zones. These nano‐clusters are formed during very early stages of aging AlCu alloys, immediately after solution heat treatment and quenching. X‐ray absorption near‐edge structure (XANES) spectra were taken from technical aluminum alloys at the copper K edge, revealing the local atomic environment of copper. The spectra of – after solution heat treatment – freshly quenched and of artificially aged alloys differ significantly from each other. We compare the measured XANES spectra with those calculated by the FEFF‐8 code. We show the importance of employing realistic, i.e. relaxed, atomic coordinates around the scattering atom type from ab‐initio calculations with SIESTA. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

     

From Discreteness to Continuity： Dislocation Equation for Two-Dimensional Triangular Lattice

A systematic method from the discreteness to the continuity is presented for the dislocation equation of the triangular lattice. A modification of the Peierls equation has been derived strictly. The modified equation includes the higher order corrections of the discrete effect which are important for the core structure of dislocation. It is observed that the modified equation possesses a universal form which is model-independent except the factors. The factors, which depend on the detail of the model, are related to the derivatives of the kernel at its zero point in the wave-vector space. The results open a way to deal with the complicated models because what one needs to do is to investigate the behaviour near the zero point of the kernel in the wave-vector space instead of calculating the kernel completely.     

One-Range Addition Theorems in Terms of ψ^α -ETOs for STOs and Coulomb-Yukawa Like Correlated Interaction Potentials of Integer and Noninteger Indices

The expansion formulas in terms of complete orthonormal sets of ψ^α -exponential type orbitals are established for the Slater type orbitals and Coulomb-Yukawa-like correlated interaction potentials of integer and noninteger indices. These relations are used in obtaining their unsymmetrical and symmetrical one-range addition theorems. The final results are especially useful in the calculations of multicentre multielectron integrals occurring when Hartree-Fock-Roothaan and explicitly correlated methods are employed.     

Iron and its complexes in silicon

This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive summary of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting experimental data obtained by different groups are discussed. The second section of the article considers the electrical and the structural properties of complexes of interstitial iron with shallow acceptors (boron, aluminum, indium, gallium, and thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow acceptors, the dissociation of these pairs, and the metastability of iron–acceptor pairs. The parameters of iron-related defects in silicon are summarized in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties of iron that are not yet completely understood and need further research are outlined. Received: 14 December 1998 / Accepted: 22 February 1999 / Published online: 26 May 1999     

First Principles Study on Electronic Structures of Mn^2＋：CdMoO4 Crystals

Electronic structures of the Mn^2＋ ：CdMoO4 crystal axe studied within the framework of the fully relativistic self-consistent Dirac Slater theory, using a numerically discrete variation （DV-Xα） method. The calculated results indicate that the 3d states of Mn have donor energy level in the forbidden band of CdMoO4 crystal. The O^2- transition energy of O 2p→Mn 3d is 3.12eV under excitation corresponding electronic transition being O^2-＋Mn^2＋→↑hvex=3.12 eV O^-- ＋Mn^＋→↑hvem O^2-＋Mn^2＋. It is predicted that the wavelength of emission should be located in the range of the 500-600nm. Thus the 500-600mm emission bands peaking at 550nm （2.25eV） of CdMoO4 crystal under excitation may be related to the Mn-like dopant ion in CdMoO4 crystal.     

High-Pressure Behaviour of β-HMX Crystal Studied by DFT-LDA

Density functional theory （DFT） with local density approximation （LDA） is employed to study the structural and electronic properties of the high explosive octahydro- 1,3,5, 7-tetranitro-1,3, 5, 7-tetrazocine （HMX） under high pressure compression up to 40 GPa. Pressure dependences of the cell volume, lattice constants, and molecular geometry of solid β-HMX are presented and discussed. It is found that N-N and N-C bonds are subject to significant change. This may implies that these bonds may be related to the sensitivity. The band gap is calculated and plotted as a function of pressure. Compared the experimental results with other theoretical works we find that LDA gives good results.     

First-Principles Studies on Electronic Structures and Absorption Spectra of PbWO4 Crystals with Defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-c

Electronic structures and absorption spectra for perfect PbW04 （PWO） crystals and the crystal containing aggregated defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing the aggregated defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-exhibit two absorption bands peaking at 1.90eV （65Onto） and 3.02eV （41Onto）. It is predicted that the 420 and fiSOnm absorption bands are related to the existence of the aggregated defect [V^2- Pb-V^2＋ o-V^2- Pb]^2-in the PWO crystal.     

Atomistic simulation of the point defects in B2-type MoTa alloy

The formation and migration mechanisms of three different point defects (mono-vacancy, anti-site defect and interstitial atom) in B₂-type MoTa alloy have been investigated by combining molecular dynamics (MD) simulation with modified analytic embedded-atom method (MAEAM). From minimization of the formation energy, we find that the anti-site defects Mo_Ta and Ta_Mo are easier to form than Mo and Ta mono-vacancies, while Mo and Ta interstitial atoms are difficult to form in the alloy. In six migration mechanisms of Mo and Ta mono-vacancies, one nearest-neighbor jump (1NNJ) is the most favorable due to its lowest activation and migration energies, but it will cause a disorder in the alloy. One next-nearest-neighbor jump (1NNNJ) and one third-nearest-neighbor jump (1TNNJ) can maintain the ordered property of the alloy but require higher activation and migration energies, so the 1NNNJ and 1TNNJ should be replaced by straight [1 0 0] six nearest-neighbor cyclic jumps (S[1 0 0]6NNCJ) or bent [1 0 0] six nearest-neighbor cyclic jumps (B[1 0 0]6NNCJ) and [1 1 0] six nearest-neighbor cyclic jumps ([1 1 0]6NNCJ), respectively. Although the migrations of Mo and Ta interstitial atoms need much lower energy than Mo and Ta mono-vacancies, they are not main migration mechanisms due to difficult to form in the alloy.