Dielectric properties and conductivity in CuO and MoO3 doped borophosphate glasses

A novel set of glasses of the type (B₂O₃)_0.10-(P₂O₅)_0.40-(CuO)_0.50−x-(MoO₃)_x, 0.05≤x≥0.50, have been investigated for dielectric properties in the frequency range 100 Hz-100 kHz and temperature range 300-575 K. From the total conductivity derived from the dielectric spectrum the frequency exponent, s, and dc and ac components of the conductivity were determined. The temperature dependence of dc and ac conductivities at different frequencies was analyzed using Mott's small polaron hopping model, and the high temperature activation energies have been estimated and discussed. The observed initial decrease in conductivity (ac and dc) and increase in activation energy with the addition of MoO₃ have been understood to be due to the hindrance offered by the Mo⁺ ions to the electronic motions. The observed peak-like behavior in conductivity (dip-like behavior in activation energy) in the composition range 0.20-0.50 mol fractions of MoO₃ may be due to mixed transition effect occurring in the present glasses. The temperature dependence of frequency exponent, s, has been analyzed using different theoretical models. It is for the first time that the mixed transition metal ion (TMI) doped borophosphate glasses have been investigated for dielectric properties and conductivity over wide temperature and frequency ranges and the data have been subjected to a thorough analysis.     

Dielectric measurements on urea added ZTS single crystals

Pure and urea added zinc tris(thiourea)sulphate (ZTS) single crystals were grown by the solvent evaporation method from aqueous solutions. The grown crystals were characterized by X-ray powder diffraction, Fourier transform infrared, second harmonic generation and density measurements. The observed results show that the small amount of urea molecules were incorporated in the crystalline matrix of ZTS crystals. Dielectric measurements were carried out along a-, b- and c-directions of the grown crystals at various temperatures by the conventional parallel plate capacitor method with a fixed frequency of 1 kHz. The present study shows that the dielectric parameters (viz. dielectric constant, dielectric loss and a.c. conductivity) increases with the increase in temperature for all the grown crystals. Activation energies were also determined.     

Growth and characterization of a pure and doped nonlinear optical l-histidine acetate single crystals

Single crystals of pure, Cu²⁺and Mg²⁺ doped l-histidine acetate (LHA) were grown successfully by slow evaporation technique. The X-ray diffraction (XRD) studies were carried out for the pure and doped grown crystals. Absorption of these grown crystals was analyzed using UV-vis-NIR studies, and it was found that these crystals possess minimum absorption from 200 nm to 1500 nm. The pure and doped crystals are characterized by Fourier transform Raman (FT-Raman), thermal and photoconductivity studies. Vickers microhardness tests were carried out for the pure and doped crystals and the mechanical strengths were found. The dielectric constant and the dielectric loss with frequency were also studied.     

Biasing effects on thallium and silver chlorides with dc/ac voltage

Comparison was made between crystals of thallium chloride and silver chloride on their biasing effects with dc/ac voltage. Previous reports say that, although their electrical conductivities are similar, the dominant charge carriers in the former are the Cl⁻ ions while the Ag⁺ ions in the latter. The present dc/ac study demonstrates the following: for thallium chloride, although Cl⁻ conduction may be dominant under low bias field, Tl⁺ conduction supercedes Cl⁻ conduction when the bias field is enhanced. For silver chloride, Ag⁺ conduction is overwhelming within wide temperature range, to cause easy dielectric breakdown on dc biasing. Concerning the extrinsic conductivity seen at temperatures below 60 °C (thallium chloride) or below 150 °C (silver chloride), it is ascribed to grain-boundary related electron conduction, not to grain-boundary related Tl⁺ or Ag⁺ conduction as reported earlier.     

Crystal growth and dielectric, mechanical, electrical and ferroelectric characterization of n-bromo succinimide doped triglycine sulphate crystals

Single crystals of triglycine sulphate (TGS) doped with n-bromo succinimide (NBS) were grown at ambient temperature by the slow evaporation technique. An aqueous solution containing 1-20 mol% of n-bromo succinimide as dopant was used for the growth of NBSTGS crystals. The incorporation of NBS in TGS crystals has been qualitatively confirmed by FTIR spectral data. The effect of the dopant on morphology and crystal properties was investigated. The cell parameters of the doped crystal were determined by the powder X-ray diffraction technique. The dielectric constant of NBS doped TGS crystal was calculated along the ferroelectric direction over the temperature range of 30-60 °C. The dielectric constant of NBSTGS crystals decrease with the increase in NBS concentration and considerable shift in the phase transition temperature (T_C) towards the higher temperature observed. Pyroelectric studies on doped TGS were carried out to determine the pyroelectric coefficient. The emergence of internal bias field due to doping was studied by collecting P-E hysteresis data. Temperature dependence of DC conductivity of the doped crystals was studied and gradual increase in the conductivity with the increase of dopant concentration was observed. The activation energy (ΔE) calculated was found to be lower in both the ferroelectric and the paraelectric phases for doped crystals compared to that of pure TGS. The micro-hardness studies were carried out at room temperature on thin plates cut perpendicular to the b-axis. Less doped TGS crystals show higher hardness values compared to pure TGS. Piezoelectric measurements were also carried out on 010 plates of doped TGS crystals at room temperature.     

Growth aspects,spectral, thermal and hardness studies of rare earth cerium(III)nitrate doped zinc(tris) thiourea sulphate single crystals

Single crystals of pure and cerium(III)nitrate doped zinc(tris) thiourea sulphate (ZTS) were grown from aqueous solution by slow evaporation method. The cell parameters of the grown crystals were determined by single crystal X-ray diffraction analysis. Powder X-ray diffraction patterns were recorded and indexed for the structural confirmation. The presence of functional group in the compound has been confirmed by FTIR analysis. UV–vis absorption spectrum has been recorded to determine the cut-off wavelength of the crystal. TGA/DTA studies show thermal stability of the grown crystals. SEM-EDX analysis revealed the incorporation of the impurity (Ce³⁺) into ZTS crystals. The microhardness study reveals that the hardness number (H_v) increases with load for all the grown crystals of this work. From the values of work hardening coefficients, it was concluded that pure and cerium nitrate doped ZTS crystals belong to the category of soft materials. The second harmonic generation of cerium(III)nitrate doped ZTS crystals was confirmed by Kurtz–Perry powder method using Nd:YAG laser.     

Effect of nickel doping on structural, optical and electrical properties of TiO2 nanoparticles by sol-gel method

Nickel-doped anatase TiO₂ nanoparticles have been prepared by sol-gel method. The X-ray powder diffraction study reveals that all the prepared samples have pure anatase phase tetragonal system. The average crystallite size of the prepared sample is 14 nm, when found through transmission electron microscope. A strong frequency dependence of both dielectric constant (?′) and dielectric loss (tan δ) were observed for various dopant levels at room temperature in the frequency range of 42 Hz to 5 MHz. At low frequency, the piling up of mobile charge carriers at the grain boundary produces interfacial polarization giving rise to high dielectric constant. The asymmetric shape of frequency dependence of the dielectric loss for the primary relaxation process is observed for each concentration. From the ac conductivity studies, the reduction in conductivity may arise due to the decreasing particle with the increase in Ni-dopant level.     

Studies on vibrational, dielectric, mechanical and thermal properties of organic nonlinear optical co-crystal: 2,6-diaminopyridinium-4-nitrophenolate-4-nitrophenol

This article presents the vibrational, dielectric, mechanical and thermal properties of 2,6-diaminopyridine-4-nitrophenolate-4-nitrophenol co-crystals (DAP:NP) grown by slow evaporation solution growth technique. It crystallizes in orthorhombic noncentrosymmetric space group Pna2₁ with cell dimension a=10.86 Å, b=12.00 Å and c=13.53 Å; α=β=γ=90° with V=1764 Å³. Functional groups present in the molecule have been identified from FTIR study. Dielectric constant (ε_r), dielectric loss (tanδ) and ac conductivity (σ_ac) behaviors of the crystals have been studied at different temperatures. Presence of piezoelectric resonance peaks at lower frequency in dielectric measurements may increase the electro-optic coefficient of the crystals. Mechanical strength and its parameters of the grown crystals have been determined by Vickers microhardness test. TG/DTA analysis shows the melting point of the material is 150 °C and it undergoes two stages of decomposition.     

Iminodiacetic acid doped ferroelectric triglycine sulphate crystal: Crystal growth and characterization

Single crystals of iminodiacetic acid (HN(CH₂COOH)₂) doped triglycine sulphate (IDATGS) crystals have been grown from aqueous solution containing 1-10 mol% of iminodiacetic acid at constant temperature by slow evaporation technique. The effects of different amounts of doping entities on the growth habit have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. The grown crystals were subjected to Fourier transform infrared (FTIR) spectroscopy studies to find the presence of various functional groups qualitatively. The dielectric permittivity has been studied as a function of temperature. An increase in the transition temperature (49.2-49.7 °C) of IDATGS crystals is observed. The dielectric constant (ε′_max) of IDATGS crystals vary in the range 922-2410 compared to pure TGS (T_c=49.12 °C and ε′_max=3050). Curie Weiss constants C_p and C_f in the paraelectric and ferroelectric phases were determined. The transition temperature (T_c) is found to decrease with increase in dopant concentration. P-E hysteresis studies show the presence of internal bias field in the crystal. Piezoelectric measurements were also carried out at room temperature. Domain patterns on b-cut plates were observed using scanning electron microscope. The micro hardness studies reveal that the doped crystals are harder than the pure TGS crystals. The low dielectric constant, higher transition temperature, internal bias field and hardness suggest that IDATGS crystals could be a potential material for IR detectors.     

AgGaS2- and Al-doped GaSe Crystals for IR Applications

We report a systematic study of AgGaS₂- and Al-doped GaSe crystals in comparison with pure GaSe and S-doped GaSe crystals. AgGaS₂-doped GaSe (GaSe:AgGaS₂) crystal was grown by Bridgman technique from the melt of GaSe:AgGaS₂ (10.6 wt.%). Its real composition was identified as GaSe:S (2 wt.%). Al-doped GaSe (GaSe:Al) crystals were grown from the melt of GaSe and 0.01, 0.05, 0.1, 0.5, 1, 2 mass % of aluminium. Al content in the grown crystals is too small to be measured. The hardness of GaSe:S (2 wt.%) crystal grown from the melt of GaSe:AgGaS₂ is 25% higher than that of GaSe:S (2 wt.%) crystal grown by a conventional S-doping technique and 1.5- to 1.9-times higher than that of pure GaSe. GaSe:Al crystals are characterized by 2.5- to 3-times higher hardness than that of pure GaSe and by extremely low conductivity of ≤ 10^− 7 Om^− 1 cm^− 1. A comparative experiment on SHG in AgGaS₂-, Al-, S-doped GaSe and pure GaSe is carried out under the pumps of 2.12-2.9 μm fs OPA and 9.2−10.8 μm ns CO₂ laser. It was found that GaSe:S crystals possess the best physical properties for mid-IR applications among these doped GaSe crystals. GaSe:Al crystals have relatively low conductivity which have strong potential for THz application.     

Synthesis,growth and studies of undoped and sodium chloride-doped Zinc Tris-thiourea Sulphate (ZTS) single crystals

Single crystals of undoped (pure) and sodium chloride (NaCl)-doped Zinc Tris-thiourea Sulphate (ZTS) were grown from aqueous solutions by slow evaporation technique. Morphological alterations have been observed when NaCl is doped into ZTS crystals. Density of the grown crystals was measured by floatation method. The values of unit cell parameters from single crystal X-ray diffraction (XRD) studies show that pure and sodium chloride-doped ZTS crystals are in orthorhombic structure. Impurity concentration in the doped crystals was estimated by using an atomic absorption spectrometer. Second Harmonic Generation (SHG) test for the undoped and NaCl-doped ZTS crystals was performed by the powder technique of Kurtz and Perry using a pulsed Nd:YAG laser. Microhardness studies show that hardness number (H_v) increases with load for all the grown crystals of this work. From the values of work hardening coefficients, it is concluded that pure and sodium chloride-doped ZTS crystals belong to the category of soft materials. UV–vis–NIR spectra show that the grown crystals have wide optical transparency in the entire visible region. Birefringence studies of the grown samples have been performed by channelled spectrum method. The thermal stability of the materials is found to be increasing with the doping concentration of sodium chloride (NaCl) in the lattice of ZTS crystals.     

Optical,thermal and mechanical characterization of Al(III)/Sb(III)-doped tris(thiourea)zinc(II) sulphate crystals

The influence of Al(III)/Sb(III)-doping on the properties of tris(thiourea)zinc(II) sulphate (ZTS) crystals grown by slow evaporation solution growth technique is reported. The as-grown crystals belong to orthorhombic system and cell parameters are, a = 7.77 Å, b = 11.13 Å, c = 15.47 Å, V = 1338 Å³ (Al(III)-doped) and a = 11.1996 Å, b = 7.770 Å, c = 15.5598 Å, V = 1368.3 Å³ (Sb(III)-doped). The structure and the crystallinity of the materials are further confirmed by powder X-ray diffraction analysis. The modes of vibrations of different functional groups present are identified by Fourier transform infrared studies. Thermogravimetric/differential thermal analysis studies reveal the purity of the materials and no decomposition is observed up to the melting point. Surface morphological changes due to doping are observed by scanning electron microscopy. Microhardness study was carried out to elucidate the mechanistic behavior microhardness studies were carried out to elucidate the mechanistic behavior. Second harmonic generation activity is much better in the case of Sb(III)-doping. The specimen is also characterized by dielectric studies.     

Conductivity in Nd+K doped ferroelectric lead germanate single crystals

Nd⁺³+K⁺ doped ferroelectric lead germanate (LG) single crystals were grown to study the influence of the double dopants on ferroelectric behavior of LG. The crystals were grown by controlled cooling of the melt. Temperature variation of d.c. conductivity of the grown samples was studied in temperature range of 40-400 °C. Room temperature conductivity was enhanced as a result of doping. The existence of two activation energies, one in the ferroelectric phase (0.61 eV) and another in the paraelectric phase (0.77 eV) in the results, were revealed. The increase in conductivity due to doping is attributed to the generation of charge carriers due to double doping and the existence of two activation energies is attributed to the structural changes taking place at the ferroelectric transition temperature.     

Measurement of nonlinear refractive index of pure and doped KTP crystals by Z-scan technique using cw He–Ne Laser

Single crystals of pure, Mo and W doped KTP crystals were grown by flux technique. The grown crystals were subjected to various characterization studies such as EDX, powder XRD, FTIR and UV analysis. The SHG efficiencies of the pure and doped KTP crystals were measured by Kurtz–Perry technique and it was found that the doped KTP crystals exhibit higher values of SHG. Nonlinear refractive indexes were measured on different growth planes of pure and doped crystals by Z-scan method using a cw (continuous wave) He–Ne laser at 632.8 nm. The measured values of nonlinear refraction of different planes were in the order of 10⁻¹² cm²/W.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Pyroelectric coefficient manipulation in doped TGS crystals

Pure and l-alanine doped Triglycine sulphate (TGS) crystals were grown in paraelectric phase (∼52 °C). Doped crystals show unequal growth rates along the ferroelectric axis. Pure TGS crystals show peculiar dielectric behavior in the ferroelectric phase, after crossing up and down the Curie point in two successive runs between room temperature and 80 °C. Much higher and unstable permittivity was found returning in the ferroelectric phase. At constant temperature (35 °C), permittivity follows a relaxation process, characterized by two relaxation times. l-Alanine doped TGS crystal shows more than one order of magnitude smaller permittivity and dielectric losses. Internal bias field of ∼1 kV/cm, induced by the dopant, made the crystal almost monodomain and pined polarization in one direction. Pyroelectric coefficient measurements were performed at constant heating rate of the samples, using a computer controlled He cryostat and Keithley 6517 electrometer. The temperature dependence of P⁺ polarization component, obtained by computer integration of the pyroelectric coefficient, was measured on a large temperature interval (−20/+80 °C). Pyroelectric coefficient of the doped samples was also measured by the same procedure, using a dc bias electric field, pointing in the opposite direction to the pined polarization. The polarization could be reversed, on the whole temperature range, by dc fields higher than bias or coercive field. Surprisingly, for the first time, the pyroelectric coefficient (p) was found constant on quite large temperature intervals. Doped TGS crystals show much smaller values of permittivity ?_r versus the pure one and consequently, get higher figure of merit M = p/?_r. The pyroelectric coefficient of this material can be tailored to become constant on a defined temperature range, under a dc field control. This characteristic makes this material valuable to be used as pyroelectric material for IR devices.     

Conduction mechanism and the dielectric relaxation process of a-Se75Te25−xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

Se₇₅Te_25−xGa_x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185–630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10²–10⁵ Hz) and in the temperature range (293–333 K). The ac conductivity was found to obey the power low ω^s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε₁ and dielectric loss ε₂ are frequency and temperature dependent. The maximum barrier height W_m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.     

Electrical behaviour of Li2O-ZnO-SiO2 glass and glass-ceramics system

Sealing quality lithium zinc silicate (LZS) glasses of compositions (wt.%) (a) LZSL- Li₂O: 12.65, ZnO: 1.85, SiO₂: 74.4, Al₂O₃: 3.8, K₂O: 2.95, P₂O₅: 3.15, B₂O₃: 1.2 (low ZnO), and (b) LZSH- Li₂O: 8.9, ZnO: 24.03, SiO₂: 53.7, Na₂O: 5.42, P₂O₅: 2.95, B₂O₃: 5 (high ZnO) were prepared by conventional melt-quench technique and converted to glass-ceramics by controlled crystallization process. The electrical properties of these samples were measured using ac impedance spectroscopy technique over a frequency range of 10 Hz-15 MHz at several temperatures in the range of 323-673 K. The ac conductivity, dc conductivity, dielectric constant and loss factor were obtained from these measurements. The dc conductivity (σ_dc) follows the Arrhenius behaviour with temperature. It is observed that σ_dc in LZSL glass is significantly higher than in the LSZH glass and the activation energies for σ_dc for LZSL and LZSH glasses are 0.59 and 1.08 eV, respectively. It further observed that the conductivity value decreases nearly one order of magnitude on conversion to glass-ceramics. The behaviour is explained on the basis of distributions and nature of alkali ions and network structures in these samples.     

Synthesis,growth and physicochemical properties of an organometallic nonlinear optical crystal: Mercury cadmium chloride thiocyanate

SCN⁻ ligand based organometallic non-linear optical mercury cadmium chloride thiocyanate (MCCTC) crystals are grown from water plus methanol mixed solvent by slow evaporation technique. The grown crystals are confirmed by single crystal X-ray diffraction analysis. MCCTC exhibits a SHG efficiency which is nearly 17 times more than that of KDP. The dielectric constant, dielectric loss and ac conductivity measurements of the sample have been carried out for different frequencies (100 Hz to 5 MHz) and, temperatures (308–388 K) and the results are discussed. Photoconductivity study confirms that the title compound possesses negative photoconducting nature. The surface morphology of MCCTC was also investigated.     

Investigations on Fe doped polyvinyl alcohol films with and without gamma (γ)-irradiation

This paper deals with the preparation of pure and ferric chloride (FeCl₃) doped polyvinyl alcohol (PVA) films by solution casting method. Optical and electrical properties were systematically investigated. We have found the decrease in optical band gap energy of PVA films on doping FeCl₃. The optical band gap energy values in the present work are found to be 3.10 eV for pure PVA, 2 eV for PVA:Fe³⁺ (5 mol%), 1.91 eV for PVA:Fe³⁺(15 mol%) and 1.8 eV for PVA:Fe³⁺(25 mol%). Direct current electrical conductivity (σ) of pure, FeCl₃ doped PVA films in the temperature range 70-127 °C has been studied. At 387 K dc electrical conductivity of pure PVA film is 5.5795 μ Ω⁻¹ cm⁻¹, PVA:Fe³⁺ (5 mol%) film is 10.0936 μ Ω⁻¹ cm⁻¹ and γ-Irradiated PVA:Fe³⁺ (5 mol%) film for 900 CGY/min is 22.1950 μ Ω⁻¹ cm⁻¹. The result reveals the enhancement of the electrical conductivity with γ-irradiation. FT-IR study signifies the intermolecular hydrogen bonding between Fe³⁺ ions of FeCl₃ with OH group of PVA.