Magnetization reversal process in thin Co nanowires

The magnetoresistance of single Co nanowires of various widths is investigated at low temperatures applying magnetic fields μ₀H up to 4.5 T. The in-plane longitudinal magnetoresistance shows pronounced features at coercive fields H_c explained by the anisotropic magnetoresistance indicating the magnetization reversal process. Monte Carlo simulations present the magnetization distribution during the reversal process, revealing different mechanisms depending on the wire width.     

Aspects of “low field” magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO₃ were grown on an (0 0 1) SrTiO₃ (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (0 0 1) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [1 0 0]_S and [0 0 1]_S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [0 0 1]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ₀H=9 T; T)−ρ( μ₀H=0 T; T)]/ρ( μ₀H=0 T; T) on the order of a few percent, with maximums of 6% and 4% (right at the Curie temperature, T_C 160 K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T<30 K) are similar to those obtained on SrRuO₃ films grown on 2° miscut (0 0 1) STO substrates with the current parallel to the field and parallel to the direction, which was identified as the easier axis for magnetization.     

MFM study of magnetic vortex cores in circular permalloy dots: behavior in external field

In a circular dot of permalloy with an appropriate size, a vortex structure with perpendicular (turned-up) magnetization at the core is realized. The existence of the perpendicular magnetization spot has been confirmed and the direction of the magnetization, up or down, has been determined by magnetic force microscopy (MFM) for permalloy dots with the diameter of 0.1–1 μm. The switching field of turned-up magnetization is determined by applying external fields perpendicularly and in tilted directions to the plane. By comparing the MFM results and the magnetization curves measured by a SQUID magnetometer, the switching process of turned-up magnetization is argued.     

Determination of magnetic axes distribution in epitaxial Fe (0 0 1) micrometric squares by magneto optical technique

In-plane magneto optical hysteresis loops have been used to determine the magnetic axes distribution of crystalline Fe (0 0 1) micrometric squares of different sizes (2.5–10 μm) and separations (0.2 and 0.6 μm). The angular dependence of the magnetization at remanence shows the interplay between the anisotropy of the unpatterned Fe thin film and the anisotropies induced by the patterning process. A rich variety of behaviors are found when the arrays of squares are rotated with regard to the Fe main crystalline directions.     

MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 10¹⁰ Jones with a differential resistance–area product greater than 6 Ohm cm² at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 10¹³ Jones with a differential resistance–area product greater than 3 × 10⁷ Ohm cm² at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.     

Broad band infrared near-field spectroscopy at finger print region using SPring-8

The authors report infrared near-field spectroscopy using synchrotron radiation at BL43IR, SPring-8 in the finger print region. At the microspectroscopy station, the infrared synchrotron radiation beam is focused on a cantilever probe with a 3 μm square aperture. A comb-shaped Au electrode with the width of 3 μm and the distance of 3 μm is used for the reflection measurement. The Au electrodes can be resolved at 650 cm⁻¹ and the resolution is estimated to be λ/5.     

NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions

This paper presents the design, fabrication and characterization of a QWIP photodetector capable of detecting simultaneously infrared radiation within near infrared (NIR), mid wavelength infrared (MWIR) and long wavelength infrared (LWIR). The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband transition in the conduction band. The quantum well structure was designed using a computational tool developed to solve self-consistently the Schrödinger–Poisson equation with the help of the shooting method. Intersubband absorption in the sample was measured for the MWIR and LWIR using Fourier transform spectroscopy (FTIR) and the measured peak positions were found at 5.3 μm and 8.7 μm which agree well with the theoretical values obtained 5.0 μm and 9.0 μm for the two infrared bands which indicates the accuracy of the self-consistent model. The photodetectors were fabricated using a standard photolithography process with exposed middle contacts to allow separate bias and readout of signals from the three wavelength bands. The measured photoresponse gave three peaks at 0.84 μm, 5.0 μm and 8.5 μm wavelengths with approximately 0.5 A/W, 0.03 A/W and 0.13 A/W peak responsivities for NIR, MWIR and LWIR bands, respectively. This work demonstrates the possibility of detection of widely separated wavelength bands using interband and intersubband transitions in quantum wells.     

Development of a 4–15 μm infrared GaAs hyperspectral QWIP imager

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4–15.4 μm wavelength region. This effort was a collaboration between NASA’s Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5–5.7 μm, Band 2; 8.5–10 μm, Band 3; 10–12 μm and Band 4; 13.3–14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four “broad” bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.     

Magnetoresistive measurement of switching behavior in nano-structured magnetic dot arrays

In the present study, geometrical and thermal effects in a mesoscopic magnetization reversal process have been studied on a novel nano-structure of magnetic relief dot with magnetoresistive measurements. Only the top layer of a substrate/CoPt(10 nm)/Cu(10 nm)/NiFe(6, 12 nm) film was structured into rectangular dots with various lengths (L) and widths (W) down to 0.2 μm. Coercive fields of NiFe relief dots (W=0.2 μm) systematically decrease with the decrease of L/W, as predicted from demagnetizing factors in single domain particle. About 50% reduction of H_c due to a temperature rise, from 5 to 300 K, demonstrates considerable thermal activation in the magnetization reversal of nano-structured magnetic particles.     

Tight-binding study of ammonia and hydrogen adsorption on magnetic cobalt systems

The semi-empirical self-consistent tight-binding model of ammonia and hydrogen adsorption at Co(0001) and small Co clusters is used to study the chemisorption role in surface magnetism. The adsorbate choice has been suggested by recent experiments. At the Co(0001) surface the atomic magnetization is predicted to diminish locally by 0.26 μ_B due to an isolated hydrogen atom adsorption; for Co₁₃ clusters the change is somewhat smaller but less localized. At H(1×1)–Co(0001) the magnetization of surface Co atoms drops to 0.88 μ_B. The hydrogen magnetic moment is very small and couples antiferromagnetically to Co. Ammonia adsorption is found to reduce the Co atom magnetization locally by 0.1 μ_B or less. We discuss the possibility of adsorbate–metal antiferromagnetic coupling in more detail.     

In-plane magnetic pattern separation in NiFe/NiO and Co/NiO exchange biased bilayers investigated by magnetic force microscopy

Ion bombardment induced magnetic patterning (IBMP) was used to write in-plane magnetized micro and submicron patterns in exchange biased magnetic bilayers, where the magnetization directions of the adjacent patterns are antiparallel to each other in remanence. These magnetic patterns were investigated by non-contact magnetic force microscopy (MFM). It is shown that the recorded MFM images of the IBMP patterns in two exemplarily chosen standard layer systems (NiFe (4.8 nm)/NiO (68 nm) and Co (4.8 nm)/NiO (68 nm)) can be well described by a model within the point-dipole approximation for the tip magnetization. For 5 and 0.9 μm wide bar patterns the domain wall widths between adjacent magnetically patterned areas were determined to a≈1 μm. The minimum magnetically stable pattern width was estimated to be 0.7 μm in the standard system Co (4.8 nm)/NiO (68 nm).     

New infrared undulator beamline at FLASH

At the vacuum ultraviolet (VUV) free electron laser in Hamburg (FLASH) an infrared (IR) beamline is being built to allow novel pump-and-probe experiments combining coherent IR pulses with the FEL radiation in the VUV spectral range. It will provide useful IR radiation generated by a purpose built undulator over the wavelength range from 200 μm to 10 μm and possibly even shorter. The commissioning of the beamline has started this summer and first light will be delivered to the experimental hall by autumn 2007. Another important application of the beamline will be electron diagnostics of the longitudinal charge distribution of the electron bunches.     

Characteristics of thermal distortions of the laser mirror substrates filled with phase-change materials

Under irradiating of the laser power of 2 kW, the thermal deformations of the silicon mirror substrates with phase change materials are experimentally measured and numerically analyzed by using finite element methods, respectively. The experimental results show that when the absorbed laser power is 120 W and the laser irradiating time gets to three seconds, the thermal distortion of the silicon mirror substrates with paraffin/carbon powder is 0.25 μm, that of the paraffin/aluminum powder 0.33 μm, and that of the paraffin/copper powder 0.37 μm. The numerical calculation coincides with the experimental results.     

Magnetic properties of submicron size particles made from Fe/Co multilayers

Arrays of submicron size (0.15 μm) particles of 23 and 35 nm thick Fe(2 ML)/Co(6 ML) multilayers were investigated by magnetization measurements and magnetic force microscopy. The behaviour of elliptical particles is mainly determined by their shape anisotropy. Varying the lateral size and thickness of the particles there is a transition from multi-domain to single-domain states.     

Uncooled microbolometer detector: Recent developments at Ulis

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Therefore, to answer these markets, a 35 μm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160 × 120 and 384 × 288 arrays production. Besides a wide-band version from uncooled 320 × 240/45 μm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 μm pixel-pitch detector as well as the wide-band 320 × 240 infrared focal plane arrays with a pixel pitch of 45 μm. Information on the new 640 × 480 array with a pixel pitch of 25 μm is also presented.     

On cobalt magnetization suppression at bimetallic interfaces

We study theoretically the Co magnetization suppression at the Co–M (M=Ti, Nb, Mo, Re, Os, Ir and Pt) interface. We consider (1) M(1×1) overlayer on the FCC(1 1 1) or HCP(0 0 0 1) slab, (2) c(2×2) Co–M alloy above the same surfaces. In the latter case, the Co magnetization is reduced to about 0.5 μ_B by Ti, Nb, Mo and Re, but the effect is probably an overestimation because of compression of M–Co bonds. At Co atoms below the M(1×1) overlayer, the Co magnetization does not drop below 1 μ_B. We discuss also the Co–M antiferromagnetic coupling.     

Interferometric 3-D displacement measurement using wavefront analysis

We propose and demonstrate a novel interferometric technique for 3-D displacement measurement. The method is based on the analysis of the phase difference distribution measured when two coherent curved wavefronts originating from different locations interfere. Both the in-plane and out-of-plane displacements are found simultaneously from a single phase difference distribution. We find that our system could measure with an accuracy better than 1.5 μm for in-plane displacements and 36 μm for out-of-plane displacements over 1 mm range. This accuracy was limited by the output lens performance. Theoretical analysis reveals that sub-micron accuracy may be possible with more careful calibration.     

Development of IR-FEL facility for energy science in Kyoto University

A mid-infrared free electron laser (FEL) has been constructed for energy science in the Institute of Advanced Energy, Kyoto University. The FEL system consists of a compact S-band Linac and an undulator to generate 4–13 μm coherent mid-infrared radiations. The Linac consists of a 4.5 cell rf gun with a thermionic cathode and a 3-m traveling-wave-type accelerator tube fed by 10 MW and 20 MW rf power, respectively. We have succeeded to produce 40 MeV, 40 mA and 3 μs electron beams. Last December, the 9.2 μm spontaneous emission from the undulator generated by 29.5 MeV electron beams was observed for the first time. Further optimization parameters of both the electron beam and the optical cavity are being pursued for an FEL lasing in the near future.     

Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

Depth dependence of photoluminescence and chemical bonding in porous silicon

Porous silicon (PS) is studied by stepwise peeling of the surface layer to clarify the non-uniformity in the photoluminescence (PL) and correlate it with the in-depth chemical bonding and structure of the 30 μm thick layer. The PL intensity grows by an order of magnitude after the peeling off of the first 10 μm and decreases five times in the next 5 μm while the peak maximum position shifts from 730 to 800 nm. X-ray photoelectron spectroscopy (XPS) measurements show that Si–Si and Si–O bonds are present both on the surface and below, and the preferential oxidation state of silicon changes from 3+ and 4+ on the surface to 1+ and 2+ below 10 μm. Using Raman spectroscopy silicon nanocrystals are shown to exist. Their mean size can be estimated at about 3 nm. These results show that the strongest PL comes from a region in the PS layer where silicon nanocrystallites are surrounded by oxides with a low level of oxidation and not from the strongly oxidized surface layer.