Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1−xNx alloys

High-pressure photoluminescence (PL) experiments (at 9 K) are reported for GaAs_1−xN_x/GaAs quantum wells having N compositions (x=0.0025, 0.004) in the dilute regime where the GaAs_1−xN_x alloy conduction band (CB) evolves rapidly by incorporation of N-pair states. Under increasing pressure, the PL spectra exhibit several new N-pair features that derive from CB-resonant states at 1 atm. Two of these features appear strongly at sub-band-gap energies for P29 kbar in the x=0.0025 sample, but are absent for all pressures in the x=0.004 sample. Several competing PL assignments due to bound-exciton recombination at NN_i pairs (i=1–4 is the anion separation) are considered in light of prior findings for N-doped (10¹⁷ cm⁻³) GaAs. The absence of certain PL features in the x=0.004 sample shows that N-pair states mix into the CB-continuum via a selective process, and this selectivity offers an important test for band-structure calculations in dilute GaAs_1−xN_x alloys.     

Growth and physical properties of sol–gel derived Co doped ZnO thin film

Zn_1−xCo_xO films were grown on glass by sol–gel spin coating process. The Zn_1−xCo_xO thin films with 10 at.% Co were highly c-axis oriented. The electrical resistivity of the films at 10 at.% Co had the lowest value due to the highest c-axis orientation. XPS and AGM analyses indicated that Co metal clusters weren’t formed, and the ferromagnetism was appeared at room temperature. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol–gel derived Zn_1−xCo_xO films suggest a potential application to dilute magnetic semiconductor devices.     

Magnetic and electric properties of layered perovskites Nd2−2xSr1+2xMn2O7 (x=0.3–0.5)

Magnetic and electric properties of layered perovskites Nd_2−2xSr_1+2xMn₂O₇ (x=0.3, 0.4 and 0.5) are sensitive to the doping content x. The sample with x=0.5 is antiferromagnetic (AFM) and insulating. On decreasing x, the AFM ordering is suppressed and a canted AFM or weak ferromagnetic (FM) ordering appears, and the resistivity decreases. The sample with x=0.4 still shows insulating behavior, but a metal–insulator transition is observed for x=0.3. By suggesting the presence of a competition between AFM super-exchange interaction and FM double-exchange interaction, the doping dependence of magnetic and electric properties can be understood.     

Optical, X-ray absorption and photoelectron spectroscopy investigation of the Co site configuration in Zn1−xCoxO films prepared by pulsed laser deposition

In this paper, we investigate the Co site configuration in Zn_1−xCo_xO thin films by means of different spectroscopic techniques. Thin films were prepared by pulsed laser deposition with Co proportion from 1% to 30%. The Co 2p doublet observed in the X-ray photoelectron spectra exhibits the spin–orbit splitting and shake-up satellites typical of Co⁺² ionization states. X-ray absorption spectra at the Co K-edge, taken in fluorescence mode, unambiguously show that Co atoms are in tetrahedral configuration substituting for Zn over the whole composition range. Optical absorption spectra provide further evidence of the tetrahedral coordination of Co cations, both through the internal transitions in the Co 3d shell and through the shift to higher energies of the band-to-band absorption edge with the increase of the Co proportion.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Growth and properties of ferromagnetic In1−xMnxSb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In_1−xMn_xSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In_1−xMn_xSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.     

Structural and optical properties of Ba(Ti1−x,Nix)O3 thin films prepared by sol–gel process

Ba(Ti_1−x,Ni_x)O₃ thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti_1−x,Ni_x)O₃ decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti_1−x,Ni_x)O₃ thin films. This has potential application in devices based on ferroelectric thin films.     

New ferromagnetic La3Co2TaO9 double perovskite: Structural and magnetic properties

The new double perovskite La₃Co₂TaO₉ has been prepared by a solid-state procedure. The crystal and magnetic structures have been studied from X-ray powder diffraction (XRPD) and neutron powder diffraction (NPD) data. Rietveld refinements were performed in the monoclinic space group P2₁/n. The structure consists of an ordered array of alternating B′O₆ and B″O₆ octahedra sharing corners, tilted along the three pseudocubic axes according to the Glazer notation a⁻b⁻c⁺. Rietveld refinements show that at RT the cell parameters are a=5.6005(7) Å, b=5.6931(7) Å, c=7.9429(9) Å and β=89.9539(7)°, and the refined crystallographic formula of this “double perovskite” can be written as La₂(Co)_2d(Co_1/3Ta_2/3)_2cO₆. Magnetization measurements and low-temperature NPD data show that the perovskite is a ferromagnet with T_C=72 K. At high T it follows the Curie–Weiss law with an effective magnetic moment of 3.82μ_B per Co ion which is very close to spin only Co²⁺ (HS).     

Magnetic properties and specific heat of LaMn1−xTixO3+δ (0<x0.2)

We present a magnetic study of the insulating perovskite LaMn_1−xTi_xO_3+δ (0<x0.2) including measurements of magnetization, susceptibility, and magnetic relaxation. The Curie temperature was found to decrease with increasing content of Ti. Two distinct magnetic transitions, irreversibility, non-exponential relaxation and aging effects confirm a reentrant spin–glass state for x=0.2. The time decay of the magnetization has an algebraic functional form for times up to 2 h. The specific heat also displays characteristic features of a spin–glass system by a linear low-temperature dependence and a broadened peak near the temperature of the reentrant transition.     

Photoinduced non-linear optical diagnostic of SiNxOy/Si111 interfaces

Anisotropic (elliptically polarized) photoinduced second harmonic generation (PISHG) in SiN_xO_y/Si1 1 1 films was proposed for contact-less monitoring of specimens with different nitrogen to oxygen (N/O) ratios. As a source for the photoinducing light, we used a nitrogen Q-switched pulse laser at wavelengths of 315, 337 and 354 nm as well as doubled frequency YAG–Nd laser wavelength (λ=530 nm). The YAG : Nd pulse laser (λ=1.06 μm; W=30 MW; τ=10–50 ps) was used to measure the PISHG. All measurements were done in a reflected light regime. We found that the output PISHG signal was sensitive to the N/O ratio and the film thickness. Measurements of the PISHG versus pumping wavelengths, powers, incident angles as well as independent measurements of the DC-electric field induced second harmonic generation indicate the major role played in this process by axially symmetric photoexcited electron–phonon states. The SiN_xO_y films were synthesized using a technique of chemical evaporation at low pressures. Films with thickness varying between 10 and 30 nm and with an N/O ratio between 0 and 1 were obtained. Electrostatic potential distribution at the Si1 1 1–SiN_xO_y interfaces was calculated. Comparison of the experimentally obtained and quantum chemically calculated PISHG data are presented. High sensitivity of anisotropic PISHG to the N/O ratio and film thickness is revealed. The role of the electron–phonon interactions in the dependencies observed is discussed. We have shown that the PISHG method has higher sensitivity than the traditional extended X-ray absorption fine structure spectroscopic and linear optical method for films with the N/O ratio higher than 0.50.     

Dispersive optical constants of glassy AsSe1−xTex system

The compositional dependence of the optical constants, the refractive index n, and the absorption index k, of the AsSe_1−xTe_x thin films with 0<x<1.0 were determined in the spectral range of 400–2500 nm. The maximum value of the refractive index n, is shifted toward the long wavelength by increasing the Te content in the examined system. The values of the forbidden energy gap of the system have been determined and were correlated with the type and the amount of chemical bonds formed by the increasing Te content in the AsSe_1−xTe_x glassy system. The value of the dispersion energy E_d exhibits low value at the composition containing the same atomic percent of Se and Te.     

Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk InAsxSb1−x (x0.05) crystals: experiment and theoretical analysis

We briefly review the growth and structural properties of InAs_xSb_1−x (x0.05) bulk single crystals and InAs_xSb_1−x (x0.06) epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and 300 K mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.     

Magnetic transitions and magnetoresistance of -type () compounds

Magnetic transitions and magnetotransport properties of polycrystalline Tb_1−xGd_xMn₆Ge₆ (x=0.2–1.0) compounds have been investigated by magnetic property and resistivity measurements in an applied magnetic field up to 50 kOe. The cell parameter a,c and cell volume V of compounds (x=0.2–1.0) increase with an increasing Gd content. The compounds (x=0.2–1.0) show a rich variety of magnetic behavior, such as antiferromagnetic, ferrimagnetic and paramagnetic state with increasing temperature. Their Curie temperatures increase almost linearly with an increasing Gd content from 460 K for x=0.2 to 484 K for x=1.0. The compounds (x=0.2–1.0) display the field induced metamagnetic transitions, and the threshold fields first increase and then decrease with an increasing Gd content. The magnetoresistance curves of the Tb_0.4Gd_0.6Mn₆Ge₆ compounds in an applied magnetic field up to 50 kOe are presented and the magnetoresistance effects are related to the metamagnetic transitions.     

Optical properties of AsSe1.5−xTex glassy system

Thin AsSe_1.5−xTe_x films with 0x<1.5 have been prepared by a thermal vacuum evaporation technique onto quartz and glass substrates kept at room temperature (300 K). The optical constants, the refractive index, n, and the absorption index, k, of the films were determined for the investigated compositions of different thickness values (100–300 nm) using spectrophotometric measurements of the transmittance, T, and the reflectance, R, at normal incidence in the spectral range 400–2500 nm. The obtained values of both n and k were found to be independent of the film thickness within the above mentioned thickness range. The estimated indirect and direct optical energy gap decreased as tellurium content increased in the parent sample AsSe_1.5. The values of dispersion energy, E_d, and lattice dielectric constant, _L, of the system have been determined and correlated with the type and amount of chemical bonds and the relative proportion of the constituent elements in the examined compositions.     

Magnetic properties of Nd1−xKxMnO3 compounds

Polycrystalline Nd_1−xK_xMnO₃ (x=0.10–0.20) compounds have been prepared in single phase form with Pbnm space group. The magnetic properties were studied by measuring dc magnetization and ac susceptibility. They exhibit paramagnetic to ferromagnetic transition with transition temperature ranging from 116 to 128 K. The magnetization data have been analyzed by using Brillouin function model and by taking into account the ferromagnetic interaction. The effective spin contribution towards ferromagnetic interaction and spin canting angle have been estimated. The spin canting angle is found to decrease with increase in doping. Magneto-caloric effect (MCE) has been studied and the maximum change in entropy was found to be 1.76 J/kg K for 1 T field. Metal–insulator transition and colossal magnetoresistance of the order of 60% for 1 T field have been observed for x=0.20 sample.     

About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy

Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In Al_xGa_1−xN/GaN quantum wells, due to the adverse actions of quantum confinement, that blue-shifts transition energies, and of the Stark field, that red-shifts them, the transition energies are nearly independent of barrier compositions at a particular well thickness (L₀2.6 nm), at least for x≤0.3. The effect of alloy fluctuations is then minimal, as reflected by a minimum in the quantum well luminescence linewidth when LL₀ for wells grown by molecular beam epitaxy on silicon or sapphire substrates. We use this effect to estimate the average variances of well widths and alloy composition fluctuations. Both results are in good agreement with, respectively, a scanning tunneling microscopy study of GaN (0001) surfaces, and estimates based on the lateral extent of the quantum well excitons.We then discuss the optical properties of the Al_xGa_1−xN barrier material, with particular emphasis on the symmetry of the valence band maximum (Γ₉ or Γ₇). We show that it may play an important role in the apparent barrier luminescence efficiency. We analyse the possible consequences of the barrier Γ₉–Γ₇ crossover on the Al_xGa_1−xN/GaN quantum well properties.     

Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped films

Pulse laser deposited (PLD) thin films of Co doped TiO₂ on silicon and quartz substrates are investigated. A mixture (1:1) of argon and oxygen with various total pressures (6.6 mPa to 53 Pa) is used to vary the oxygen content in the samples. The crystal structure and transport/ magnetic properties of Co_xTi_1−xO_2−δ (x=0.01, 0.03, 0.06) thin films are found to have strong dependence on oxygen stoichiometry. X-ray diffraction (XRD) data reveal mixed phase material containing both anatase and rutile. However, the stability of each phase depends on the amount of oxygen present in the chamber during the growth of the films. X-ray Photoelectron Spectroscopy (XPS) shows the incorporation of Co in TiO₂ and is in the 2+ oxidation state. There occurs an enhancement in electrical conductivity and magnetization due to the off stoichiometric oxygen. The resistivity data follow a simple thermal activation model, giving carriers’ activation energies in the range of 20 to 140 meV. A bound magnetic polaron model is adopted to explain the observed magnetic behavior of the films.     

Structural characteristics and morphology of SmxCe1−xO2−x/2 thin films

Effect of the deposition temperature (200 and 500 °C) and composition of Sm_xCe_1−xO_2−x/2 (x = 0, 10.9–15.9 mol%) thin films prepared by electron beam physical vapor deposition (EB-PVD) and Ar⁺ ion beam assisted deposition (IBAD) combined with EB-PVD on structural characteristics and morphology/microstructure was investigated. The X-ray photoelectron spectroscopy (XPS) of the surface and electron probe microanalysis (EPMA) of the bulk of the film revealed the dominant occurrence of Ce⁴⁺ oxidation state, suggesting the presence of CeO₂ phase, which was confirmed by X-ray diffraction (XRD). The Ce³⁺ oxidation states corresponding to Ce₂O₃ phase were in minority. The XRD and scanning electron microscopy (SEM) showed the polycrystalline columnar structure and a rooftop morphology of the surface. Effects of the preparation conditions (temperature, composition, IBAD) on the lattice parameter, grain size, perfection of the columnar growth and its impact on the surface morphology are analyzed and discussed.     

Growth, structural and optical properties of CdxZn1−xS thin films deposited using spray pyrolysis technique

Cd_xZn_(1−x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. The value of lattice constant ‘a’ and ‘c’ have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0–1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS.