Magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0－1) compounds

The magnetic properties and magnetoresistance effect of Y_1-xGd_xMn₆Sn₆ (x=0－1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0－5 T). Compounds with x=0.4－1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0－0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1－0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0－1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4－1) decreases, while the ordering points of the compounds (x=0－1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%.     

Magnetic properties and magnetoresistance of HfFe2Ge2-type Dy1-xGdxMn6Ge6 (x=0.1－0.6) compounds

The magnetic properties and magnetoresistance effects of Dy_{1-x}Gd_xMn_6Ge_6 (x=0.1－0.6) compounds have been studied by magnetic properties and resistivity measurements in applied magnetic fields up to 5T. The compounds with x=0.1, 0.2, 0.4 and 0.5 order antiferromagnetically at 425, 428, 430 and 432K, respectively, and there are second magnetic phase transitions below 100K. The compound with x=0.6 exhibits a transition from ferrimagnetic to antiferromagnetic, then to ferrimagnetic state again with decreasing temperature. Furthermore, it displays a field-induced metamagnetic transition, and its threshold field decreases with increasing temperature. The magnetoresistance curve of the compound with x=0.6 in applied magnetic fields up to 5T is presented and the magnetoresistance effects are related to the metamagnetic transitions.     

Magnetic properties and magnetocaloric effects of Mn5Ge3-xGax

We report on the magnetic properties and magnetocaloric effects of Mn5Ge3-xGax compounds with x=0.1,0.2,0.3,0.4,0.6 and 0.9. All samples crystallize in the hexagonal Mn5Si3-type structure with space group P63/mcm and order ferromagnetically.The Curie temperature of these compounds decreases with increasing x, from 306K (x=0.1) to 274K (x=0.9).The average Mn magnetic moments increases with increasing Ga content,reaching a maximum value at x=0.6.The magnetic entropy changes in these compounds are determined from the temperature and field dependence of the magnetization using the thermodynamic Maxwell relation.The Ga substitution has two kinds of influence on the magnetocaloric effect (MCE) of Mn5Ge3.One is that the magnitude of the magnetic entropy change decreases,the other is that the MCE peak becomes broadened.     

Effects of Ag Doping on Magnetoresistance of La0.833 K0.167MnO3 Polycrystalline Perovskite Manganites

The microstructure,magnetic and transport properties of the heterogeneous system with a nominal composi-tion (1/m)Ag2O-La0.833K0.167MnO3 (1/m is molar ratio with m=32,16,8,4,and 2) have been studied.The x-ray diffraction patterns show that all the samples are two-phase composite and consist of a magnetic La0.833K0.167MnO3 (LKMO) perovskite phase and a nonmagnetic metal Ag phase.The room-temperature magnetoresistance (MR) effect is enhanced significantly due to the addition of Ag.For the m=4 sample,we obtain MR values up to 32％ under a lower field of 0.5 T and 64％ under a higher field of 5.5 T at the temperature of 300K,which are much larger than the corresponding MR values (10％and 35％) of the LKMO sample withoutAg.In the low-temperature range from 4.2K to 250K,the MR values of the Ag-added samples however decrease with the increasing Ag content in the samples.This effect is discussed qualitatively by using the relative contribution from the intrinsic MR effect and the extrinsic MR effect including the spin-polarized-tunnelling and spin-dependent scattering effects in different temperature regions.     

Magnetic Transitions and Magnetoresistance of Y1—xDyxMn6Sn6（x=0.2 and 0.3）

Magnetic transitions and magnetoresistance of HfFe6Ge6-type Y1-xDyxMn6Sn6 (x=0.2 and 0.3) have been investigated in the temperature range of 5-380K. It was found that the strong exchange interaction between the Dy and Mn sublattices results in incomplete ferromagnetism at low temperatures. At higher temperatures, the metamagnetic transition from an antiferromagnetic state to a ferrimagnetic state can be induced by a fairly small threshold field or by increasing temperature. The magnetic transition is accompanied by a large magnetoresistance effect of about -29% and -16% at 5K for x=0.2 and 0.3, respectively.     

Giant Positive Magnetoresistance in Grain-Oriented CxCo1-x Alloys

The grain-oriented CxGo1-z (x = 0.9, 0.5) samples were fabricated by the hot.pressing method. The microstruc-ture was observed by an x-ray diffractometer and a scanning electron microscope. The resistance against the applied magnetic field was measured by a standard four-polnt probe method at different temperatures. The magnetoresistance and the magnetization ratio were studied as a function of magnetic field in the range of -1800 kA/m-1800 kA /m at different temperatures from 50 K to 300 K. The magnetoresistance of grain-oriented GxGo1-x is positive. The maximum positive MR of 98% at 50 K and 34% at 300 K was obtained under 1800 kA/m magnetic field in the C0.9Go0.1 sample.     

EFFECT OF THE SUBSTITUTION OF Ga ON THE STRUCTURE AND MAGNETIC PROPERTIES OF Dy2Fe17 COMPOUND

Dy₂Fe_17-xGa_x (x = 0,1,2,3,4, 5 and 6) compounds were prepared by arc melting. These compounds are of single phase, having a hexagonal Th₂Ni₁₇-type structure fox x=0 and rhombohedral Th₂Zn₁₇-type structure for x≥1. The substitution of Ga for Fe in the Dy₂Fe₁₇ leads to a linear increase of unit-cell volumes. The saturation magnetization M_s at 1.5K is found to decrease linearly with increasing Ga concentration, from 65emu/g for x= 0 to 5emu/g for x = 6; and the Fe magnetic moment μ_Fe is almost independent of Ga concentration. The Curie temperature T_C is found first to increase with increasing Ga content x, and goes through a maximum value of 559 K at about x = 3, then decreases. The sharp increase of T_C at lower Ga content may result from the increase of unit cell volumes. Dy₂Fe_17-xGa_x compounds with x≤5 exhibit easy plane anisotropy at room temperature, and those with x = 6 possess easy-axis.     

Change in the magnetic ground state of LaFe11.4Al1.6 compound by the substitution of Mn for Fe

The structure and magnetic properties of La(Fe_{1-x}Mn_x)_{11.4}Al_{1.6} (0≤x≤0.25)compounds have been studied. The NaZn_{13}-type structure is preserved and the lattice parameter increases linearly with increasing the Mn concentration. The magnetic ground state changes from the antiferromagnetic to the spin-glass or the cluster-glass state by the substitution of Mn for Fe. Furthermore, a field-induced transition from cluster glass to ferromagnet is found for the samples with x=0.05 and 0.10.     

Cation distributions estimated using the magnetic moments of the spinel ferrites Co_(1-x)Cr_xFe_2O_4 at 10K

（A）[B]2O4 ferrite samples with the composition COl_xCrxFe204 （0.0 ≤ x ≤1.0） are prepared using a hydrothermal method, and subjected to calcining in a tube furnace with an argon-flow at 1673 K for 2 h. X-ray diffraction patterns indicate that each of all the samples has a single phase cubic spinel structure with a space group of Fd3m. Magnetic measurements show that the saturation magnetization decreases with as the Cr content x increases. The cation distribution of the samples is estimated by fitting the dependence of the magnetic moments on x at l 0 K, using the quantum mechanical model previously proposed by our group. The calculated sum of the content values of the Cr3＋ and Cr2＋ cations occupying the （A） sites increases as the value of x increases. In the fitting process, the magnetic moment directions of the Cr3＋ and Cr2＋ cations are assumed to be antiparallel to those of the Fe and Co cations, respectively, which is in accordance with Hund＇s rules.     

The effect of Si content on the martensitic transformation temperature of Ni55.5Fe18Ga26.5-xSix alloys

This paper investigates the effects of substitution of Si for Ga on the martensitic transformation behaviours in Ni-Fe-Ga alloys by using optical metallographic microscope and differential scanning calorimetry (DSC) methods. The structure type of Ni55.5Fe18Ga26.5-xSix alloys is determined by x-ray diffraction (XRD),and the XRD patterns show the microstructure of Ni-Fe-Ga-Si alloys transformed from body-centred tetragonal martensite (with Si content x = 0) to body-centred cubic austenite (with x = 2) at room temperature. The martensitic transformation temperatures of the Ni55.5Fe18Ga26.5-xSix alloys decrease almost linearly with increasing Si content in the Si content range of x ≤ 3. Thermal treatment also plays an important role on martensitic transformation temperatures in the Ni-Fe-Ga-Si alloy. The valence electronic concentrations,size factor,L21 degree of order and strength of parent phase influence the martensitic transformation temperatures of the Ni-Fe-Ga-Si alloys. An understanding of the relationship between martensitic transformation temperatures and Si content will be significant for designing an appropriate Ni-Fe-Ga-Si alloy for a specific application at a given temperature.     

THERMOELECTRIC POWER IN (Gd,Sm)1.85Ce0.15CuO4 SYSTEM

Thermoelectric power measurements are reported for seven samples with different x in the Gd_1.85-xSm_xCe_0.15CuO₄ system at temperatures ranging from 80K to 300K. For Sm-rich superconducting samples, thermoelectric power S has a small negative value and is almost temperature independent. As the content of Sm decreases, the absolute value of S increases and a broad valley appears in the S(T) curve. The results which can be interpreted in terms of a two-channel model support the existence of mid-gap states with Fermi level close to the minimum of the density of states as well as the coexistence of electron and hole carriers. It is suggested that a linear temperature dependence of S with a small negative slope is close to the intrinsic behavior in the a-b plane of normal states for superconducting samples.     

Low temperature magnetic and magnetostrictive properties in Pr(Fe_(1-x)Co_x)_(1.9) cubic Laves alloys

The structures,spin reorientations,magnetic,and magnetostrictive properties of the polycrystalline Pr(Fe_(1-x)Co_x)_(1.9)(x=0–1.0)cubic laves phase alloys between 5 K and 300 K are investigated.Large low-field magnetostrictions are observed at 5 K in the alloys with x=0.2 and 0.4 due to the low magnetic anisotropies of these two alloys.A large negative magnetostriction of about-1130 ppm is found in PrCo_(1.9) alloy at 5 K.The magnetizations of the alloys with 0≤x≤0.6decrease abnormally at the spin reorientation temperature T_(sr),and an abnormity is detected in the alloy with x=1.0 at its Curie temperature T_c(45 K).The substitution of Fe by Co increases the value of T_(sr) in the alloy with x value increasing from 0.0 to 0.4,and then reduces the value of Tsr with x value further increasing to 0.6.     

Elevation of the Power Factor of Co4Sb12 Skutterudite with Sm-Doping in High-Pressure High-Temperature Synthesis

A thermoelectric material Smx Co4Sb12 （0（ x ≤1.0） is synthesized at high pressure and high temperature leading to an enhanced power factor. The experimental measurements show that the SmxCo4Sb12 compounds exhibits n-type conduction. The absolute value of the Seebeck coefficient decreases with increasing Sm fraction. The resistivity increases with samarium content x from 0.1 to 0.2, but decreases dramatically when x changes from 0.2 to 1.0. The maximum power factor reaches 13.1 μW.cm^-1K-2 at x =1.0, which is larger than the data previously reported for the La-doped CoSb3 prepared at room pressure.     

Fabrication and optical properties of MgxZn1-xO thin films

MgxZn1xO (x ≤ 0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of MgxZn1xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of Mg x Zn 1 x O films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of MgxZn1xO films shift to higher energies and band gaps linearly increase from 3.24 eV at x=0 to 3.90 eV at x=0.30.     

STRUCTURE, MAGNETIC PROPERTIES AND GIANT MAGNETORESISTANCE OF YMn6Sn6-xGax (x=0-0.6) COMPOUNDS

Structure, magnetic and transport properties of YMn₆Sn_6-xGa_x (0≤x≤0.6) compounds with a HfFe₆Ge₆-type structure were investigated. It was found that the Ga substitution leads to a contraction of the unit-cell volume. A transition from an antiferromagnetic to a ferromagnetic (or ferrimagnetic) state can be observed for samples (0.1≤x≤0.2) with increasing temperature. The antiferro-ferromagnetic transition for samples with x≤0.2 can also be induced by an external field. The required field is very low, and decreases with increasing Ga concentration. More Ga concentration (x≥0.3) leads to the samples being ferromagnetic in the whole temperature range below the Curie temperature. The Ga substitution weakens the interlayer magnetic coupling between the Mn spins. Corresponding to the metamagnetic transition, a magnetoresistance as large as 32% under a field of 5 T was observed at 5 K for the sample with x=0.2.     

Sn-based type-VIII single-crystal clathrates with a large figure of merit

Single-crystal samples of type-VIII Ba 8 Ga 16 x Cu x Sn 30 (x=0,0.03,0.06,0.15) clathrates were prepared using the Sn-flux method.At room temperature the carrier density,n,is 3.5-5×10～(19)cm～3 for all the samples,the carrier mobility,μ H,increases to more than twice that of Ba 8 Ga 16 Sn 30 for all the Cu doping samples,and consequently the electrical conductivity is enhanced distinctly from 1.90×10～4 S/m to 4.40×10～4 S/m,with the Cu composition increasing from x=0 to x=0.15.The Seebeck coefficient,α,decreases slightly with the increases in Cu composition.The κ values are about 0.72 W/mK at 300 K and are almost invariant with temperature up to 500 K for the samples with x=0 and x=0.03.The lattice thermal conductivity,κ L,decreases from 0.59 W/mK for x=0 to 0.50 W/mK for x=0.03 at 300 K.The figure of merit for x=0.03 reaches 1.35 at 540 K.     

Coexistence of positive and negative magnetic entropy changes in CeMn_2(Si_(1-x)Ge_x)_2 compounds

A series of CeMn2(Si1-xGex)2(x = 0.2, 0.4, 0.6, 0.8) compounds are prepared by the arc-melting method. All the samples primarily crystallize in the Th Cr2Si2-type structure. The temperature dependences of zero-field-cooled(ZFC) and FC magnetization measurements show a transition from antiferromagnetic(AFM) state to ferromagnetic(FM) state at room temperature with the increase of the Ge concentration. For x = 0.4, the sample exhibits two kinds of phase transitions with increasing temperature: from AFM to FM and from FM to paramagnetic(PM) at around TN~197 K and T C~300 K,respectively. The corresponding Arrott curves indicate that the AFM–FM transition is of first-order character and the FM–PM transition is of second-order character. Meanwhile, the coexistence of positive and negative magnetic entropy changes can be observed, which are corresponding to the AFM–FM and FM–PM transitions, respectively.     

Magnetoresistances and magnetic entropy changes associated with negative lattice expansions in NaZn13-type compounds LaFeCoSi

Magnetoresistances and magnetic entropy changes in NaZn13-type compounds La（Fel-xCox）11.9Si1.1 （x=0.04, 0.06, and 0.08） with Curie temperatures of 243 K, 274 K, and 301 K, respectively, are studied. The ferromagnetic ordering is accompanied by a negative lattice expansion. Large magnetic entropy changes in a wide temperature range from ～230 K to ～320 K are achieved. Raising Co content increases the Curie temperature but weakens the magnetovolume effect, thereby causing a decrease in magnetic entropy change. These materials exhibit a metallic character below Tc, whereas the electrical resistance decreases abruptly and then recovers the metal-like behaviour above Tc. Application of a magnetic field retains the transitions via increasing the ferromagnetic ordering temperature. An isothermal increase in magnetic field leads to an increase in electrical resistance at temperatures near but above Tc, which is a consequence of the field-induced metamagnetic transition from a paramagnetic state to a ferromagnetic state.     

Yb/Sr双原子复合填充的Ⅰ-型Yb_x Sr_(8-x)Ga_(16)Ge_(30)笼合物的合成及热电性能

用熔融法结合放电等离子烧结(SPS)合成了Yb/Sr双原子复合填充的n型Yb_x Sr_(8-x)Ga_(16)Ge_(30)(x=0,0.5,1.0,1.5)笼合物,研究了双原子复合填充及Yb填充量x对Yb_x Sr_(8-x)Ga_(16)Ge_(30)笼合物热电传输特性的影响规律.结果表明,Yb在Yb_x Sr_(8-x)Ga_(16)Ge_(30)化合物中的固溶极限介于1.0-1.5之间.随着Yb填充量x的增加,化合物的室温载流子浓度增加而迁移率降低.在300-800 K温度范围内,随着x的增加,双原子填充试样的电导率逐渐增大,Seebeck系数逐渐减小,其中x=0.5的试样与单原子填充的Sr_8Ga_(16)Ge_(30)试样相比,电导率变化不大,Seebeck系数显著增加.Yb/Sr双原子复合填充比Sr单原子填充更有利于晶格热导率的降低,且晶格热导率随着Yb填充量x的增加逐渐降低.在所有n型Yb_x Sr_(8-x)Ga_(16)Ge_(30)化合物中Yb_(1.0) Sr_(7.0)Ga_(16)Ge_(30)化合物的ZT值最大,在800 K时其最大ZT值达0.81,与单原子填充的Sr_8Ga_(16)Ge_(30)化合物相比ZT值提高了35%.

Abstract：

n-type Yb/Sr double-atom-filled Yb_xSr_(8-x)Ga_(16)Ge_(30) (x = 0, 0.5, 1.0, 1.5) elathrates have been synthesized by combining melting reaction with the spark plasma sintering (SPS) method. The effects of double-atom fining on thermoelectric properties have been investigated. The results show that the solubility limit of Yb in the Sr-Ga-Ge system is between 1.0 and 1.5 when it is expressed by the formula of Yb_xSr_(8-x)Ga_(16)Ge_(30). With increasing Yb content x, the room-temperature carrier concentration of the Yb_xSr_(8-x)Ga_(16)Ge_(30) samples increases, while the room-temperature carrier mobility decreases. For the double-atom-filled samples, the electrical conductivity raises with increasing x, while the Seebeck coefficient reduces, and in which the x = 0.5 sample has a comparable electrical conductivity and a remarkably higher $eebeck coefficient compared with the single-atom-filled Sr_8Ga_(16)Ge_(30) sample in the temperature range of 300-800 K. The double-atom filling of Yb/Sr has significant influence on the lattice thermal conductivity of the Yb_xSr_(8-x)Ga_(16)Ge_(30) samples and the lattice thermal conductivity decreases gradually with increasing x. Of all the Yb_xSr_(8-x)Ga_(16)Ge_(30) samples, the maximum dimensionless figure of merit ZT of 0.81 is obtained at 800 K for the Yb_(1.0)Sr_(7.0)Ga_(16)Ge_(30) sample. Compared with that of single-atom-filled Sr_(8-x)Ga_(16)Ge_(30) sample, it is 35% higher at the same temperature.     

Magnetic properties and coercivity mechanism of precipitation-hardened Gd－Co based ribbons

Gd(Co_{0.88-x}Cu_xFe_{0.09}Zr_{0.03})_z ribbons with x=0.075-0.200 and z=6.4－7.7 have been prepared by a melt-spinning technique. A cellular microstructure consisting of 2:17 cells surrounded by the 1:5 cell boundary phase is obtained after precipitation hardening. The dependence of room temperature coercivity on the heat treatment process suggests that the long-time isothermal aging is not helpful for the development of magnetic properties. Positive temperature coefficient of remanence from room temperature to about 673K is typical for all samples, while positive temperature coefficient of coercivity is obtained only in ribbons with low Cu content. The coercivity mechanism of the precipitation-hardened ribbons at different temperatures is also discussed.