采用可编程I/O接口的多路串行通讯模拟器设计

某航天器闭式贮箱增压控制系统的测试中,需要设计具有多路串行通讯接口的模拟器,用于模拟数字式压力传感器的输出信号。对于72路串行发送和10路串行接收功能,若采用传统商用的标准串行通讯接口板,则整个模拟器需要十多套板卡,系统复杂,体积大,且多个通道之间难以实现同步与实时控制。为此提出了一种采用多路可编程I/O接口板实现485通讯功能的方案,借助于LabVIEW软件开发平台,由FPGA编程实现通讯协议;并配置信号调理板以实现信号的隔离传输和驱动。最终仅用一台小型便携式设备和三块板卡就实现了模拟器的所有功能,可以灵活地根据系统设置的工作模式模拟传感器的输出,在增压系统的测试中表现优异。试验结果表明,此种设计方案具有较强的通用性和适应性,可以广泛推广到多种通讯应用场合。     

杂质S对Fe/Al_2O_3界面结合影响的第一性原理研究

采用基于密度泛函理论的第一性原理平面波赝势方法,研究了杂质S对Fe/Al_2O_3界面结合的影响.计算结果表明:S在界面上Fe3原子处的界面偏析能最小,因此S易于向Fe3原子处偏析.Fe/Al_2O_3界面的结合主要受界面两侧Fe和O原子间相互作用控制.态密度、键重叠布居数和电子密度的计算结果均表明:S在界面处的偏析减弱了界面处Fe原子和O原子之间的相互作用,而且S的存在会引起Fe和O原子之间较强的静电排斥,这些导致了界面结合力的下降.研究结果可以使我们深入理解S在Fe-Cr-Al合金界面处的偏析造成氧化膜与合金基体结合减弱及氧化膜在S偏聚处剥离的机理.     

The influence of SiCp oxidized on the interface layer and thermal conductivity of SiCp/Al composites

In this work, oxidation of silicon carbide particles (SiCp) at elevated temperature and its influence on the interface layer and thermal conductivity of SiCp/ZL101 composites prepared using pressure infiltration process were investigated respectively. It is found that initial temperature for the oxidation of SiCp is about 850?°C, and that the oxidation increment of SiCp and the thickness of SiO₂ layer increase with the increase in pre-oxidation temperature and time, when the oxidized temperature exceeds 1100?°C, or the duration time exceeds 2?h at 1100?°C, a small amount of ablation will take place on the SiCp, as well as the oxidized layer has some loss. The formation of SiO₂ layer can provide certain interface reactions with interface layers (3.1–6.36?μm), and the higher the thickness of SiO₂ layer, the thicker the interface layer in SiCp/Al composites. However, the thickness of SiO₂ layer is more than 5.9?μm, which is not benefit for the formation of interface layer. With the increase in the thickness of interface layer, thermal conductivity declines, but is not linear.     

N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响

采用N₂O plasma处理SiN_x薄膜作为绝缘层,以室温下沉积的铟镓锌氧化物(IGZO)作为有源层制备了 IGZO薄膜晶体管。与常规的IGZO-TFT相比,N₂O plasma处理过的IGZO-TFT的迁移率由原来的4.5 cm²·V^-1·s^-1增 加至8.1 cm²·V^-1·s^-1,阈值电压由原来的11.5 V减小至3.2 V,亚阈值摆由原来的1.25 V/decade减小至0.9 V/decade。采用C-V方法计算了两种器件的陷阱态,结果发现N₂O plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFT的陷阱态,表明N₂O plasma处理SiN_x绝缘层是一种改善IGZO-TFT器件性能的有效方法。     

Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La₂O₃ hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H₂O-based atomic layer deposition (ALD) La₂O₃/Al₂O₃ nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H₂O-based ALD La₂O₃/Al₂O₃ nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.     

Surface modification of Mg2B2O5 whisker and its effect on the mechanical properties and thermostability of polycarbonate/Mg2B2O5w composites

The Mg₂B₂O₅ whiskers (Mg₂B₂O₅w) were modified by boric acid ester (BE) coupling agent and used to prepare polycarbonate (PC) composites. Surface wettability test and evaluation of dispersibility of BE-modified Mg₂B₂O₅w (BE-Mg₂B₂O₅w) in n-heptane were carried out by water contact angle measurement and polarizing microscopy, respectively. The surface chemical characteristics of BE-Mg₂B₂O₅w and estimation of the amount of tightly bonded organic modifier were examined by Fourier transform infrared spectrometry (FT-IR) and thermogravimetric analysis (TGA), respectively. The influence of BE-Mg₂B₂O₅w on the mechanical property, morphology and thermostability of PC composites was investigated by using universal testing machine, scanning electron microscopy (SEM), dynamic mechanical analysis (DMA) and TGA, respectively. It was found that BE was successfully grafted to the surface of Mg₂B₂O₅w, and the hydrophobic BE-Mg₂B₂O₅w leads to high ratio of adhesion work to interfacial tension between PC and BE-Mg₂B₂O₅w, and its better dispersibility in n-heptane. Furthermore, the incorporation of BE-Mg₂B₂O₅w into PC matrix resulted in higher tensile properties of PC/BE-Mg₂B₂O₅w than that of PC/Mg₂B₂O₅w composites and lower maximum weight loss rate than that of PC. The storage modulus of the PC/Mg₂B₂O₅w composites increased obviously as a function of whisker content, especially for the composites with BE-Mg₂B₂O₅w, but the T_g value changed little.     

The effect of magnetic field heat treatment on magnetostriction of Terfenol-D 2-2 composites

Based on the analysis of the magnetostriction for Terfenol-D composites, Terfenol-D 2-2 magnetostrictive composites have been prepared with laminations perpendicular to [1 1 2] axes. Then one of the samples was annealed in the vacuum at 423 K for 15 min at the magnetic field of 240 kA/m, which is along the direction of laminations and vertical to the [1 1 2] axes of the specimen. The static magnetostriction λ and dynamic magnetostrictive coefficient d₃₃ of samples were measured under the compressive stress of 0, 2, 4, 6 and 8 MPa. Effects of the compressive stress and the magnetic field heat treatment on the magnetostriction λ have been investigated. It is found that the magnetostriction of 2-2 composites can be improved under the compressive stress when the magnetic field is larger than 20 kA/m. The magnetostriction of 2-2 composites with the magnetic field heat treatment increases under compressive stress, and it can reach 1390×10⁻⁶ at the magnetic field of 200 kA/m and under the compressive stress of 4 MPa, much larger than the value of 860×10⁻⁶ without the magnetic field heat treatment. The highest magnetostriction of the 2-2 composite with the magnetic field heat treatment can reach 1530×10⁻⁶. The dynamic magnetostrictive coefficient d₃₃ of 2-2 composites with the magnetic field heat treatment have been improved, compared with that without magnetic field heat treatment. The maximum value of d₃₃ of the sample with magnetic field heat treatment is 71% larger than that without magnetic field heat treatment.     

氘等离子体预辐照对W-Y2O3合金耐热冲击性能的影响

应用直线等离子体装置，对W-Y₂O₃合金的垂直于锻造轴(锻造面)和平行于锻造轴(横截面)的两个表面迚行了氘等离子体辐照。利用60kW电子束材料测试平台，研究了等离子体辐照前、后的W-Y2O3合金在功率0.22~0.44GW·m^-2下耐瞬态热冲击性能。结果表明，氘等离子体辐照没有降低钨合金的裂纹阈值，其中锻造面的裂纹阈值范围高于横截面，且超过了0.33GW·m^-2。综合考虑高能率锻造W-Y₂O₃合金的氘离子辐照与热冲击行为，锻造面可能更适合面对等离子体。     

The effect of surface modification on the properties of sisal fiber and improvement of interfacial adhesion in sisal/starch composites induced by starch nanocrystals

A facile approach was utilized to introduce starch nanocrystals (SNCs) onto sisal fiber (SF) to improve the interfacial adhesion between SF and starch. For this, fibers were treated with alkali and then subjected to cold plasma treatment to increase the accessibility with SNCs, which was confirmed through X-ray photoelectron spectroscopy (XPS). It was found that due to the influence of cold plasma treatment, new functional groups were introduced onto SF. The surface characteristics of SF were examined by Fourier transform infrared spectroscopy (FTIR) and Scanning electron microscopy (SEM). The observed results suggested that SNCs were successfully distributed onto SF. Tensile strength and interfacial shear strength of fibers treated under different conditions were calculated and compared through a two-parameter Weibull model. The highest interfacial shear strength of 3.05 MPa was obtained by Alkali-300 W-SNCs, which indicated an increase of 80.6% than untreated SF. It has also been proved that the starch nanocrystals produced hydrogen bonding and physical interlocking between sisal fiber and starch. Notably, the outcome of this investigation indicates that SNCs may be applied for the fabrication of high performance, environmentally friendly sisal/starch composites for a range of technological applications.     

B对Mo等元素在奥氏体钢/Cr2O3界面占位倾向影响的理论研究

超级奥氏体不锈钢中因含有更高铬、钼含量,具有极高的耐点蚀、晶间腐蚀性能,这与Mo等合金元素对钝化膜结构的影响密切相关,尤其含硼超奥钢钝化层表面Cr、Mo含量明显增加,但其原子层次的微观作用机制尚不清楚.本文采用第一性原理方法,研究了置换原子(Mo、Mn、Ni、Si),及间隙原子B在fcc-Fe/Cr₂O₃界面占位倾向,并分析了可稳定存在于界面B对这些元素偏析倾向的影响.结果表明:Mo、Mn、Ni、Si、B均可与fcc-Fe/Cr₂O₃界面结构体系形成稳定结构;Mo、Ni倾向分布于界面基体侧,Mo有向氧化层扩散的趋势,B处于fcc-Fe/Cr₂O₃界面基体侧更稳定,Mn、Si易分布于氧化层中;存在于界面B对四种元素在fcc-Fe/Cr₂O₃界面体系中的占位影响不同,有利于Mn、Mo偏析于界面基体侧,但抑制Mo向界面基体侧的偏析程度,使得Si、Ni更均匀的分布于基体. Mo等合金元素分布于界面时的态密度来看,界面处M...     

FT-IR与微量吸附量热联用研究BaO/Al_2O_3催化剂表面酸碱性质

运用红外光谱与微量吸附量热联用技术研究了焙烧温度对BaO/γ-Al2O3表面酸碱性的影响。结果表明,γ-Al2O3经1000℃焙烧转化为θ-Al2O3和α-Al2O3,BaOγ-Al2O3经高温焙烧后生成BaO·Al2O3和BaO·6Al2O3等物相。600℃焙烧后,BaO/γ-Al2O3的表面酸性比γ-Al2O3的稍有下降,而碱性却大为增强。经1000℃焙烧后,表面的酸碱性则均大为降低,只有少量较弱的酸碱性位。     

Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al$_{2}$O$_{3}$/GaN MOSFETs (metal-oxide-semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility ($\mu_{\rm FEmax}$) of sapphire substrate device (176 cm$^{2}$/V$\cdot$s) is 1.83 times that of silicon substrate device (96 cm$^{2}$/V$\cdot$s). The conductive resistance of silicon substrate device is 21.2 $\Omega {\cdot }$mm, while that of sapphire substrate device is only 15.2 $\Omega {\cdot }$mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al$_{2}$O$_{3}$/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al$_{2}$O$_{3}$ dielectric near Al$_{2}$O$_{3}$/GaN and the interface traps in Al$_{2}$O$_{3}$/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.     

The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO2 nanowires

Ablation under oxyacetylene torch with heat flux of 4186.8(10%kW/m2 for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration（CVI） combined with liquid silicon infiltration（LSI） process.The results indicated that C/C-SiC composites present a better ablation resistance than C/C composites without doped SiC.The doped SiC and the ablation products SiO₂ derived from it play key roles in ablation process.Bulk quantities of SiO₂ nanowires with diameter of 80 nm-150 nm and length of tens microns were observed on the surface of specimens after ablation.The growth mechanism of the SiO₂ nanowires was interpreted with a developed vapor-liquid-solid（VLS） driven by the temperature gradient.     

Effect of spraying power on microstructure and bonding strength of MoSi2-based coatings prepared by supersonic plasma spraying

MoSi₂-based oxidation protective coatings for SiC-coated carbon/carbon composites were prepared using a supersonic plasma spraying at the power of 40 kW, 45 kW, 50 kW and 55 kW, respectively. Effect of spraying power on the microstructure and bonding strength of MoSi₂-based coatings was studied. The results show that coatings become more and more compact and the bonding strength increases when the spraying power increases from 40 kW to 50 kW. At the power of 50 kW, the coatings were dense and the bonding strength reached a maximum value of 14.5 MPa. As the spraying power is of sufficient magnitude, many cracks and pores reappaer in coatings and the bonding strength between coating and substrate also decreases.     

The location of excess electrons on H2O/TiO2(110) surface and its role in the surface reactions

Excess electrons play a key role in many of the properties of Titanium dioxide (TiO₂). Understanding their behaviour is important for improving the performance of TiO₂ in energy-related applications. Here, we describe a DFT + U study of the locations of the unpaired electron (UPE) on rutile TiO₂(110) (R-TiO₂(110)) surface and H₂O/R-TiO₂(110) surface. Our results show that the subsurface are preferred with R-TiO₂(110) surface. In contrast to previous studies, we find that the UPE tends to migrate to the surface H₂O-Ti_5c (the five-coordinated titanium (Ti_5c) at surface with H₂O adsorption) with the increasing of H₂O coverage and UPE concentration. In addition, we have shown that the UPE plays an important role in the O-H bond dissociation and other important elementary reactions in photo-catalytic H₂O dissociation on R-TiO₂(110) such as H, OH and H₂ desorption. Specifically, it enhances the O-H bond dissociation, as well as H and H₂ desorption from bridging hydroxyl and Ti_5c-OH (the Ti_5c with OH adsorption), but hinders the OH and H desorption from Ti_5c. We believe our results afford a further understanding of the adsorbent dependent UPE migration, and the role of UPE in the surface reactions.