Studies of 6H–SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H–SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H–SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p⁺n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H–SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H–SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of poly-silicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to γ rays.     

Long SiC nanowires synthesized from off-gases of the polycarbosilane-derived SiC preparation

In this communication, we report on the attempt to make full use of the off-gases from polycarbosilane-derived SiC preparation, and we successfully synthesized long SiC nanowires in large areas with Fe(NO₃)₃ as catalyst. The nanowires have diameters of about 80–300 nm and lengths of millimeters, and they are identified as single crystals β-SiC along the 〈111〉 direction. The VLS mechanism was employed to interpret the nanowire growth.     

Direct measurement of the growth mode of graphene on SiC(0001) and SiC(0001¯)

We have determined the growth mode of graphene on SiC(0001) and SiC(0001ˉ) using ultrathin, isotopically labeled Si(13)C "marker layers" grown epitaxially on the Si(12)C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si face and C face), we find that the (13)C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

Influence of SiC Electron Acceptor–Donor Modification on Thermal and Physical Properties of Carbon Fiber/SiC/Epoxy Composites

In this work, the effects of electron acceptor–donor modification on the surface properties of SiC were investigated in the mechanical interfacial properties of carbon fibers-reinforced SiC-impregnated epoxy matrix composites. The surface properties of the SiC were determined according to acid/base values and FT-IR, and contact angle measurements. The thermal and mechanical interfacial properties of the composites were evaluated using a thermogravimetric analysis, critical strain energy release rate mode II (G _IIC), and impact strength testing. As a result, the electron acceptor-treated SiC had a higher acid value and polar component in surface free energy than did the untreated SiC or the electron donor-treated SiC. The G _IIC and impact strength mechanical interfacial properties of the composites had been improved in the specimens treated by acidic solutions due to the good wetting and a high degree of adhesion with electron donor characteristic epoxy resins.     

Microdeformation behaviour of Al–SiC metal matrix composites

The satisfactory performance of metal matrix composites depends critically on their integrity, the heart of which is the quality of the matrix-reinforcement interface. The nature of the interface depends in turn on the processing of the MMC component. At the micro-level, the development of local concentration gradients around the reinforcement can be very different according to the nominal conditions. These concentration gradients are due to the metal matrix attempting to deform during processing. This plays a crucial role in the micro-structural events of segregation and precipitation at the matrix-reinforcement interface. Equilibrium segregation occurs as a result of impurity atoms relaxing in disordered sites found at interfaces, such as grain boundaries, whereas non-equilibrium segregation arises because of imbalances in point defect concentrations set up around interfaces during non-equilibrium heat treatment processing. The amount and width of segregation depend very much on (a) the heat treatment temperature and the cooling rate, (b) the concentration of solute atoms and (c) the binding energy between solute atoms and vacancies. An aluminium–silicon–magnesium alloy matrix reinforced with varying amounts of silicon carbide particles was used in this study. A method of calculation has been applied to predict the interfacial fracture strength of aluminium, in the presence of magnesium segregation at metal matrix interface. Preliminary results show that the model succeeds in predicting the trends in relation to segregation and intergranular fracture strength behaviour in these materials. Microhardness profiles of reinforced and un-reinforced aluminium alloys are reported. The presence of precipitates at alloy-reinforcement interface identified by Nano-SEM.     

Large-scale synthesis and photoluminescence properties of?SiC networks

By using a novel and low-cost microwave method, three-dimensional SiC networks have been synthesized in large-scale. The composition and structural features of the product were characterized by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. The results show that the SiC networks consist of nanocable X-junction and Y-junction. Some nanocables are composed of 3C–SiC multicore encapsulated in single amorphous SiO₂ shell. The SiC networks emitted stable violet–blue light around 380 nm under 325-nm excitation. Compared to the emission peak of the SiC networks after etched and the reported results of 3C–SiC nanowires, the emission peak of the SiC networks shows significant blueshift. The origin of the photoluminescence for the SiC networks could be due to two possible reasons: the central crystalline SiC nanowires and amorphous SiO₂ shell. A two-step growth mechanism of the SiC networks was proposed based on the experimental characterizations. The successful synthesis of SiC networks is an important step in the development of SiC-based electronic devices and circuits.     

SiC/SiC复合材料第一壁热工设计

以日本原子力研究所那珂研究所聚变堆设计室进行的先进稳态托卡马克聚变堆2（A－SSTR2）概念设计为基础，对SiC/SiC复合材料包层／第一壁热工设计进行了分析计算。通过选取各种几何位形和材料敏感特性参数，用有限元法进行了大量的热工计算，以最高温度、最大热应力为基础建立了包层／第一壁设计窗口，选取了满足热工要求的最佳设计方案，对今后的工程设计具有指导作用和重要的参考价值。     

Increase of photoluminescence blinking frequency of 3C–SiC nanocrystals with excitation power

Super-resolution optical fluctuation imaging is dependent on the blinking frequency of fluorophores.Consequently,improvement of the photoluminescence(PL)blink frequency is important.This is achieved for 3C–SiC nanocrystals(NCs)by simply increasing the excitation power.Using an excitation of 488 nm with powers of 5μW to 50μW,individual 3C–SiC NC always exhibits PL blinking with a short on-state sojourn time(0.1 s).A fast Fourier transform method is exploited to determine the PL switching frequency.It is found that the frequency of the bright state increases from 2 Hz to 20 Hz as the excitation power increases from 5μW to 50μW,which is explained by the Auger photonionization model.     

Influence of defects in SiC （0001） on epitaxial graphene

Defects in silicon carbide(SiC) substrate are crucial to the properties of the epitaxial graphene(EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC(0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.     

Comprehensive study of a 4H–SiC MES–MOSFET

In this paper, we studied the enhancement of the breakdown voltage in the 4H–SiC MESFET–MOSFET (MES–MOSFET) structure which we have proposed in our previous work. We compared this structure with Conventional Bulk-MOSFET (CB-MOSFET) and Field plated Conventional Bulk-MOSFET (FCB-MOSFET) structures. The 4H–SiC MES–MOSFET structure consists of two additional schottky buried gates which behave like a Metal on Semiconductor (MES) at the interface of the active region and substrate. The motivation for this structure was to enhance the breakdown voltage by introducing a new technique of utilizing the reduced surface field (RESURF) concept. In our comparison and investigation we used a two-dimensional device simulator. Our simulation results show that the breakdown voltage of the proposed structure is 3.7 and 2.9 times larger than CB-MOSFET and FCB-MOSFET structures, respectively. We also showed that the threshold voltage and the slope of drain current (I_D) as a function of drain–source voltage (V_DS) for all the structures is the same.     

Optical Property of SiC Thin Films Implanted by 120 keV N Ions

SiC films on Si substrates were deposited by RF co-sputtering of the Si and C compound target and implanted by 120 keV N ions with MEVVA ion current. The structure, optical property were studied by Fourier transform infrared spectrum (FTIR) and photoluminescence (PL) spectroscopy. The studied results indicated that carbon nitride single bond, double bond and triangle bond (Fig.l) are produced in the SiC film implanted. Its luminescence intensity depends strongly on the quantity of N ions. From the Fig.2 we can clearly observed significant PL peak centred at 365 nm. Because SiC is an indirect energy band clearance semiconductor material, its transition luminescence has to phonon participant. This is a binary process, luminescence rate is small, annealed samples appear crystal and include more nano-size SiC particulate. Based on the quantum limit effect, these nano-particulates not only increase energy band width but also energy band structure becomes direct energy band clearance. N ions implanted enhanced composite efficiency of deep irradiation center in energy band clearance and luminescence center moves towards blue light.     

Numerical modelling of anisotropy in 4H－SiC MESFET‘s

A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characteristics, are demonstrated. The simulation results show obvious effects of the anisotropy for 4H-SiC and are in better accordance with the experimental results. The anisotropy for 4H-SiC should be involved in the device design to acquire better performances.     

Method of calculating the phase composition of SiC–Si–C materials obtained by silicon infiltration of carbon matrices

The synthesis of SiC–Si–C materials by siliconizing porous carbon matrices has been considered, and a method of determining their phase composition has been devised. Preforms of two types have been siliconized, i.e., biomorphic carbon matrices prepared by wood pyrolysis and artificial porous graphites prepared by mixing and compacting carbon powders with an organic binder. The calculated phase compositions are in good agreement with microstructure metallographic examination data.     

Comparison of the properties of Nextel 720/SiC composites at room temperature and 1300°C

Continuous Nextel 720 fibers reinforced SiC composites with PyC interface are fabricated by LPCVI at 1000°C for 200 h using SiCH₃Cl₃ as precursor. The mechanical properties at RT and 1300°C are measured by three-point bending. The microstructures of the interface are characterized by TEM. The results indicate the composites have the metal-like behavior of fracture, whether they are at RT or high temperature. The RT and 1300°C strengths are 310 MPa and 140 MPa, respectively. The RT and 1300°C strains are 0.32% and 0.12%, respectively. The loss of flexural strength and strain of the Nextel 720/SiC composites at high temperature result from stronger residual thermal stress caused by the mismatch of CTE between fibers and matrix. A gap appears between fibers and PyC interface after the 1300°C test, which could be resulted from 7.7% compressive strain of PyC interface caused by the residual thermal stress and 0.1% sintering shrinkage of Nextel 720 fiber.     

Microstructural evolution of SiC joints soldered using Zn–Al filler metals with the assistance of ultrasound

SiC ceramics were successfully soldered with the assistance of ultrasound. Two kinds of filler metals, namely non-eutectic Zn–5Al–3Cu and eutectic Zn–5Al alloys, were used. The effects of ultrasonic action on the microstructure and mechanical properties of the soldered joints were investigated. The results showed that ultrasound could promote the wetting and bonding between the SiC ceramic and filler metals within tens of seconds. For the Zn–5Al–3Cu solder, a fully grain-refined structure in the bond layer was obtained as the ultrasonic action time increased. This may lead to a substantial enhancement in the strength of the soldered joints. For the Zn–5Al solder, the shear strength of the soldered joints was only ∼102 MPa when the ultrasonic action time was shorter, and fractures occurred in the brittle lamellar eutectic phases in the center of the bond layer. With increasing ultrasonic action time, the lamellar eutectic phase in the bond layer of SiC joints could be completely transformed to a fine non-lamellar eutectic structure. Meanwhile, the grains in the bond layer were obviously refined. Those results led to the remarkable enhancement of the shear strength of the joints (∼138 MPa) using the Zn–5Al solder, which had approached that enhancement using the Zn–5Al–3Cu solder. The enhanced mechanical properties of the joints were attributed to the significant refinement of the grains and the change in the eutectic structure in the bond layer. Prolonged enhanced heterogeneous nucleation triggered by ultrasonic cavitation is the predominant refinement mechanism of the bond metals of the SiC joints.     

Growth of a Novel Periodic Structure of SiC/AIN Multilayers by Low Pressure Chemical Vapour Deposition

A novel lO-period SiC/A1N multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition （LPCVD）. The structure with total film thickness of about 1.45~m is deposited on a Si （111） substrate and shows good surface morphology with a smaller rms surface roughness of f.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/A1N structure and periodic changes of depth profiles of C, Si, A1, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AIN periodic structure using the home-made LPCVD system.     

Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC （0001） wafers

Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H–SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.