Formation of periodic structures by surface treatments of polyamide fiber: Part I. UV excimer laser irradiation

The processes of UV excimer laser irradiation (both high- and low-fluence) of polyamide fiber were systemically studied, including the surface temperature of the material during the treatment and possible mechanisms for the structure formation. The fluence applied in the high-fluence laser irradiation was above the ablation threshold of the material. The ablation of polymer can be described on the basis of photo-thermal bond breaking within the bulk material. The fluence applied in the low-fluence laser irradiation was far below the ablation threshold of the material. The development of low-fluence laser-induced structures is closely related to the absorption coefficient of the material, the laser fluence used, the polarization of the laser beam, the angle of incidence, and the number of laser pulses applied.     

Formation of TiO2 film with lower electrical resistance by aerosol beam and fiber laser irradiation

Titanium dioxide (TiO₂) is a functional ceramic with unique photoconductive and photocatalytic properties. In our previous study, a TiO₂ film was formed by aerosol beam irradiation. The films were darkened by femtosecond laser irradiation in air. Then electrical resistance of the darkened area on the film decreased. The heating process is also a useful method to vary the TiO₂ film property. Local heating can be performed by using a continuous wave (CW) fiber laser. In this study, the film was irradiated with a commercial CW fiber laser in vacuum. Laser irradiated area on the film was also darkened after CW fiber laser irradiation. The electrical resistance of the darkened area on the films was decreased as laser fluence was increased. Electrical resistance of the darkened area after CW fiber laser irradiation in vacuum was much smaller than that after femtosecond laser irradiation.     

Self-organization of thin metal films by irradiation with nanosecond laser pulses

Modifications in thin metal films under intensive laser irradiation were studied. Gold, silver, copper, chromium and aluminum films with the thickness of 100 nm were deposited on the glass substrate. Back-side irradiation through the substrate with a burst of nanosecond pulses tightly focused to a line was applied. The film removal threshold with a single pulse F_th was estimated for every material and laser fluence was kept above it in the range of 1.5-3 F_th during experiments. Diverse behavior of the films depending on the metal, the shift between pulses and laser fluence was observed. In chromium, the regular structures were developed in a quite wide range of processing parameters. In gold, three kinds of ripples were observed: transverse (similar to ripples in chromium), longitudinal and a structure of ripples oriented at 60° to each other. The combination of physical properties facilitated the regular assembly of the molten metal in chromium and to some extent in gold.     

Removal of doped poly(methylmetacrylate) from tungsten and titanium substrates by femto- and nanosecond laser cleaning

The influence of different laser pulse lengths on the removal of a polymer layer from metal substrates was investigated. As model systems, doped poly(methylmetacrylate) (PMMA) on titanium and tungsten substrates were selected.The ablation threshold and irradiation spot morphology of titanium and tungsten were compared for femtosecond (fs) and nanosecond (ns) laser irradiation and different pulse numbers. Nanosecond laser treatment resulted in a non-homogeneous surface morphology for both titanium and tungsten substrates. Femtosecond irradiation of tungsten revealed a homogeneous ablation spot with little changes in the surface morphology. For titanium, the formation of columnar structures within the irradiation spot was observed.Two different dopant concentrations were used for PMMA to achieve an equal linear absorption coefficient for the femto- and nanosecond laser wavelengths of 790 and 1064 nm. The best results were achieved for the removal of doped PMMA by femtosecond laser irradiation, where only a minimal modification of the metal surface was detected. In the case of nanosecond laser exposure, a pronounced change of the structure was observed, suggesting that damage-free cleaning of the selected metal may only be possible using femtosecond laser pulses. Different experimental parameters, such as laser fluence, pulse repetition rate and sample speed were also investigated to optimize the cleaning quality of doped PMMA from tungsten substrates with femtosecond laser pulses.     

Swelling and modification of silicone surface by F2 laser irradiation

The surface of silicone rubber swelled and was modified by 157-nm F₂ laser irradiation at a laser fluence less than the ablation threshold. The irradiated surface swelled to a height of approximately 3 m. Fourier-transform infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy showed that the irradiated surface was modified to SiO₂. 193-nm ArF laser irradiation of the silicone rubber induced the surface to swell, but not to modify to SiO₂. The IR peaks of end groups of silicone were observed in the FT-IR spectra of the surface. From these results, it is concluded that the main chains (Si-O) of silicone were photodissociated and generation of low molecular weight silicones caused the swelling. In addition, it was observed that methane and carbon dioxide were released from silicone rubber when each laser beam irradiated it. These gases were generated by photodissociation of the side chains (Si-CH₃) of silicone. An F₂ laser beam can photodissociate the Si-CH₃ bonds and the Si-O bonds of silicone and O₂ effectively even at a laser fluence less than the ablation threshold, resulting in the modification to SiO₂ and the swelling. PACS 61.80.Ba; 61.82.Pv; 82.50.Hp     

Effect of complex inter-site couplings on the excitation energy transfer in the FMO complex

The laser irradiation effects on surface, structural and mechanical properties of zirconium (Zr) have been investigated. For this purpose, Zr samples were irradiated with Excimer (KrF) laser (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz). The irradiation was performed under the ambient environment of oxygen gas at filling pressure of 20 torr by varying laser fluences ranging from 3.8 to 5.1 cm^-2. The surface and structural modification of irradiated targets was investigated by scanning electron microscope (SEM) and X-ray diffractometer (XRD). In order to explore the mechanical properties of irradiated Zr, the tensile testing and Vickers micro hardness testing techniques were employed. SEM analysis reveals the grain growth on the irradiated Zr surfaces for all fluences. However, the largest sized grains are grown for the lowest fluence of 3.8 J cm^?2. With increasing fluence from 4.3 to 5.1 J cm^?2, the compactness and density of grains increase whereas their size decreases. XRD analysis reveals the appearance of new phases of ZrO₂ and Zr₃O. The variation in the peak intensity is observed to be anomalous whereas decreasing trend in the crystallite size and residual stresses has been observed with increasing fluence. Micro hardness analysis reveals the increasing trend in surface hardness with increasing fluence. The tensile testing exhibits the increasing trend of yield stress (YS), decreasing trend of percentage elongation and anomalous behaviour of ultimate tensile strength with increasing fluence.     

Reflectivity in femtosecond-laser-induced structural changes of diamond-like carbon film

We report characteristic changes in reflectivity of diamond-like-carbon (DLC) films following irradiation of femtosecond laser pulses at laser fluence around the ablation threshold, where we have observed the formation of periodic nanostructure on the film surface and the modification of bonding structure from DLC to glassy carbon in our recent experiments. The experimental results have shown that the reflectivity change should be a reliable measure to monitor the experimental condition to produce the structural changes, being closely associated with the fundamental physical process to induce these phenomena. PACS 79.20.Ds; 81.40.Tv; 42.62.Cf     

Excimer laser-assisted chemical process for formation of hydrophobic surface of Si (001)

Silicon (Si) wettability is one of the important parameters in the development of Si-based biosensing and lab-on-chip devices. We report on UV laser induced hydrophobicity of Si (001) wafers immersed in methanol during the irradiation with an ArF excimer laser. The irradiation with 800 pulses of the laser operating at 65 mJ/cm² allowed to significantly increase the hydrophobicity of investigated samples as characterized by the static contact angle change from 77° to 103°. Owing to the irradiation with relatively low laser fluence, no measurable change in surface morphology of the irradiated samples has been observed with atomic force microscopy measurements. The nature of the hydrophobic surface of investigated samples is consistent with X-ray photoelectron spectroscopy analysis that indicates formation of Si–O–CH₃ bonds on the surface of the laser-irradiated material.     

Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface

Spontaneous nanostructure formations on roughened and smooth silicon surface by the femtosecond laser irradiation with the repetition rate of 100 kHz were systematically studied. In addition to the widely accepted so-called coarse ripple, which has the period analogous to the wavelength of the laser beam and aligns perpendicularly to the electric field of the incident laser beam, the ripple which has the period similar to the wavelength of the incident laser beam but aligns parallel to the electric field of the laser beam was observed on the roughened surface for the lower fluence and the higher number of pulse irradiation. Furthermore, the ensemble of dots formed by the enhancement of the local electric field was found on the roughened surface. This structure is preferentially formed around the scratches aligned perpendicularly to the electric field of the laser beam. These novel nanostructures are considered to be peculiar to the femtosecond laser irradiation and open the possibilities for precise control of the spontaneous nanostructure formation by femtosecond laser irradiation.     

Electrical behaviour of laser-damaged silicon photodiodes

A measurement of the electrical parameters degradation of Si photodiodes irradiated by laser visible light has been performed. The laser is a Q-switched Nd:YAG, frequency doubled, operated in single pulse mode of 4 ns duration. The applied fluence levels range up to 90 J/cm². Two kinds of irradiation process were applied: either a part of the detector active area was irradiated in single pulse mode, or a scanning of the whole detector active area was performed with successive identical pulses. It has been shown that the fluence necessary to induce significant changes (local decrease of 35%) in responsivity is several times the surface melting threshold fluence (0.5 J/cm²). Conversely, the dark current is the most sensitive parameter, increasing by about four times for high irradiation. The in-depth dopant distribution is altered by high fluence irradiation in a way that cannot be explained by simple thermal modelling.     

The evolution of a microstructure on Si by a femtosecond laser

Femtosecond laser micromaching silicon is investigated by a Ti:sapphire laser (800 nm, 1 kHz) with a pulse duration of 130 fs. It is investigated that the result is affected by fluences at a different number of pulse. In the experiment, we have observed the periodic surface structure such as microholes, and found that the direction of the array holes was parallel to the laser polarization direction. This result has potential application in the fabrication of two-dimensional photonic crystals. We have determined the optimal conditions for producing these surface structures. At the same time, when we change the fluence and the pulse number, the ripples and the columns emerge. If the pulse number remains unchanged, we also investigated the evolution of a crater at a different pulse fluence. The microholes will become regular cracks on the outer irradiation area, and the ripples will gradually disappear. But, the column structures will appear. At a higher fluence, ripples only appear when the number of pulses (N) is less than 200 and a column structure exists at the center region when N is above 600.     

Formation of cavitation-induced pits on target surface in liquid-phase laser ablation

It is well known that a crater is formed on the target surface by the irradiation of intense laser pulses in laser ablation. In this work, we report that additional pits are formed on the bottom surface of the ablation crater due to the collapse of a cavitation bubble in liquid-phase laser ablation. We observed the formation of several cavitation-induced pits when the fluence of the laser pulse used for ablation was approximately 5 J/cm². The number of cavitation-induced pits decreased with the laser fluence, and we observed one or two cavitation-induced pits when the laser fluence was higher than 10 J/cm². In addition, we examined the influence of the liquid temperature on the formation of cavitation-induced pits. The collapse of the cavitation bubble was not observed when the liquid temperature was close to the boiling temperature, and in this case, we found no cavitation-induced pits on the bottom surface of the ablation crater. This experimental result was discussed by considering the cavitation parameter.     

Surface modulation of silicon surface by excimer laser at laser fluence below ablation threshold

Controlled single step fabrication of silicon conical surface modulations on [311] silicon surface is reported utilizing KrF excimer laser [λ=248 nm] at laser fluence below ablation threshold laser fluence. When laser fluence was increased gradually from 0 to 0.2 J/cm² for fixed 200 numbers of shots; first nanopores are observed to form at 0.1 J/cm², then very shallow nanocones evolve as a function of laser fluence. At 0.2 J/cm², nanoparticles are observed to form. Up to 0.15 J/cm² the very shallow nanocone volume is smaller but increases at a fast rate with laser fluence thereafter. It is observed that the net material volume before and after the laser irradiation remains the same, a sign of the melting and resolidification without any ablation.     

Selective removal and patterning of a Co/Cu/Co trilayer created by femtosecond laser processing

The selective removal and patterning of a typical pseudo-spin-valve structure, consisting of a Co(20 nm)/ Cu(6 nm)/Co(3 nm) trilayer, by femtosecond laser has been examined in terms of irradiation parameters and layer structure. Ablation thresholds of the individual Co and Cu thin films and the SiO₂/Si substrate have been measured for single-shot irradiation with a 200 femtosecond (fs) laser pulses of a Ti:sapphire laser operating at 775 nm. Ablation of the entire trilayer structure was characterized by a sequential removal of the layers at a threshold level of fluence of 0.28 J/cm². Atomic Force Microscopy, optical microscopy, profilometry and Sputtered Neutral Mass Spectroscopy were employed to characterize the laser-induced single-shot laser selective removal and patterned areas. As a result, two phenomena were found to characterize the laser process: (i) selective removal of the Co and Cu layer due to the change of the laser fluence and (ii) regular pillars’ area of Co/Cu/Co could be achieved in a regular manner with the lowest pillar width size of 1.5 μm. Ablation through the layers was accompanied by the formation of bulges at the edges of the pillars, which was the biggest inconvenience in lowering the pillar size through the femtosecond laser process.     

308nm激光作用下V2O5非晶薄膜的变异

研究了在308nm准分子激光辐照下，V₂O₅非晶薄膜性质的变化-利用X射线衍射、X射线光电子能谱及扫描电子显微镜等多种测试方法进行了分析比较，确定V₂O₅非晶薄膜性质的变化是由于高功率密度的准分子激光作用，造成V₂O₅薄膜的快速升温熔化和快速冷凝重构，使其中的氧产生缺位，引起化学配比偏离所致- 关键词：     

Dependence of ablation threshold and LIPSS formation on copper thin films by accumulative UV picosecond laser shots

The ablation threshold and Laser-induced periodic surface structure (LIPSS) formation on copper thin film were investigated using a picosecond laser (Nd:YAG laser: 266 nm, 42 ps, 10 Hz). We show that the ablation threshold varies with respect to the number of laser shots (N) on two different substrates. The single-shot ablation threshold was estimated to be close to 170 ± 20 mJ/cm². The incubation coefficient was estimated to be 0.68 ± 0.03 for copper thin films on silicon and glass substrates. In addition, morphology changes of the ablated regions, in the same spot area, were studied as a function of fluence and number of laser shots. An intermediate structure occurred with a mix of low spatial frequency LIPSS (LSFL), high spatial frequency LIPSS (HSFL) and regular spikes at a fluence F < 250 mJ/cm² and 1,000 < N ≤ 10.000 shots. LSFL was observed with a spatial period close to the irradiation wavelength and an orientation perpendicular to the laser polarization, and HSFL with a spatial period of ～120 nm and a parallel orientation. Lastly, the global relationship between the laser parameters (i.e. fluence and number of shots) and LIPSS formation was established in the form of a 2D map.     

Nanosecond pulsed laser ablation of silicon in liquids

Laser fluence and laser shot number are important parameters for pulse laser based micromachining of silicon in liquids. This paper presents laser-induced ablation of silicon in liquids of the dimethyl sulfoxide (DMSO) and the water at different applied laser fluence levels and laser shot numbers. The experimental results are conducted using 15 ns pulsed laser irradiation at 532 nm. The silicon surface morphology of the irradiated spots has an appearance as one can see in porous formation. The surface morphology exhibits a large number of cavities which indicates as bubble nucleation sites. The observed surface morphology shows that the explosive melt expulsion could be a dominant process for the laser ablation of silicon in liquids using nanosecond pulsed laser irradiation at 532 nm. Silicon surface’s ablated diameter growth was measured at different applied laser fluences and shot numbers in both liquid interfaces. A theoretical analysis suggested investigating silicon surface etching in liquid by intense multiple nanosecond laser pulses. It has been assumed that the nanosecond pulsed laser-induced silicon surface modification is due to the process of explosive melt expulsion under the action of the confined plasma-induced pressure or shock wave trapped between the silicon target and the overlying liquid. This analysis allows us to determine the effective lateral interaction zone of ablated solid target related to nanosecond pulsed laser illumination. The theoretical analysis is found in excellent agreement with the experimental measurements of silicon ablated diameter growth in the DMSO and the water interfaces. Multiple-shot laser ablation threshold of silicon is determined. Pulsed energy accumulation model is used to obtain the single-shot ablation threshold of silicon. The smaller ablation threshold value is found in the DMSO, and the incubation effect is also found to be absent.     

Gold coatings on polyethyleneterephthalate nano-patterned by F2 laser irradiation

In this work we present periodic surface structures generated by linearly polarized F₂ laser light (157 nm) on polyethyleneterephthalate (PET). Atomic force microscopy was used to study the topological changes induced by the laser irradiation. The laser irradiation induces the formation of periodic ripple structures with a width of ca 130 nm and a height of about 15 nm in the fluence range 3.80-4.70 mJ/cm² and the roughness of the polymer surface increases due to the presence of these periodic structures. Subsequently, the laser modified PET foils were coated with a 50 nm thick gold layer by sputtering. After Au deposition on the PET foils with ripple structure, the roughness of surface decreases in comparison to PET with ripples without Au coating. For 50 nm thick Au layers, the ripple structure is not directly transferred to the gold coating, but it has an obvious effect on the grain size of the coating. With considerably thinner Au layers, the ripple structures are smoothened but preserved.     

Identification of ultra-fast electronic and thermal processes during femtosecond laser ablation of Si

Ultra-fast electronic and thermal processes for the energy deposition mechanism during femtosecond laser ablation of Si have been identified by means of atomic force microscopy and Raman scattering techniques. For this purpose, Si targets were exposed with 800-nm, 25-fs Ti:sapphire laser pulses for different laser fluencies in air and under UHV (ultra high vacuum) conditions. Various nano- and microstructures on the surface of the irradiated samples are revealed by a detailed surface topography analysis. Ultra-fast electronic processes are dominant in the lower-fluence regime. Therefore, by starting from the ablation threshold three different fluence regimes have been chosen: a lower-fluence regime (0.06–0.5 J?cm^?2 single-shot irradiation under UHV condition and 0.25–2.5 J?cm^?2 single-shot irradiation in ambient condition), a moderate-fluence regime (0.25–1.5 J?cm^?2 multiple-shot irradiation), and a higher-fluence regime (2.5–3.5 J?cm^?2 multiple-shot irradiation). Around the ablation threshold fluence, most significant features identified at the Si surface are nanohillock-like structures. The appearance of these nanohillocks is regarded as typical features for fast electronic processes (correlated with existence of hot electrons) and is explained on the basis of Coulomb explosion. The growth of these typical features (nanohillocks) by femtosecond laser irradiation is an element of novelty. At moderate irradiation fluence, a ring-shaped ablation with larger bumps and periodic surface structures is observed and is considered as a footprint of ultra-fast melting. Further increase in the laser fluence, i.e. a higher-fluence regime, resulted in strong enhancement of the thermal process with the appearance of larger islands. The change in surface topography provides an innovative clue to differentiate between ultra-fast electronic processes, i.e. Coulomb explosion (sub-100 fs) at a lower-fluence regime and ultra-fast melting (hundreds of fs) at a moderate-fluence regime, and slow thermal processes (ps time scale) at a higher-fluence regime. These fast electronic and thermal processes are well correlated to structural and crystallographic alterations, inferred from Raman spectroscopy.