Factors affecting the microstructure and mechanical properties of Ti-Al3Ti core-shell-structured particle-reinforced Al matrix composites

This work studied the effects of matrix powder and sintering temperature on the microstructure and mechanical properties of in situ formed Ti–Al₃Ti core–shell-structured particle-reinforced pure Al-based composites. It has been shown that both factors have significant effects on the morphology of the reinforcements and densification behaviour of the composites. Due to the strong interfacial bonding and the limitation of the crack propagation in the intermetallic shell during deformation by soft Al matrix and Ti core, the composite fabricated using fine spherical-shaped Al powder and sintered at 570 °C for 5 h has the optimal combination of the overall mechanical properties. The study provides a direction for the optimum combination of high strength and ductility of the composites by adjusting the fabrication parameters.     

CuO/Al2O3、CuO/CeO2-Al2O3和CuO/La2O3-Al2O3催化剂中CuO物种被CO氧化的比较

用浸渍法制备了CuO/Al2O3 (Cu/Al)、CuO/CeO2- Al2O3 (Cu/CeAl)和CuO/La2O3-Al2O3(Cu/LaAl)催化剂. 通过原位XRD、Raman和H2-TPR方法， 对催化剂中的CuO物种以及CuO-Al2O3的固-固相反应进行了表征. 结果表明，对于Cu/Al催化剂，CuAl2O4存在于CuO与Al2O3层之间，CuO以高分散和晶相两种相态存在于催化剂的表层；对于Cu/CeAl催化剂，除了少量高分散和晶相的CuO存在于表层外，大部分CuO迁移到了CeO2的内层，     

原子层沉积Al2O3/n-GaN MOS结构的电容特性

利用原子层沉积技术制备了具有圆形透明电 极的Ni/Au/Al₂O₃/n-GaN金属-氧化物-半导体结构, 研究了紫外光照对样品电容特性及深能级界面态的影响, 分析了非理想样品积累区电容随偏压增加而下降的物理起源. 在无光照情形下, 由于极长的电子发射时间与极慢的少数载流子热产生速率, 样品的室温电容-电压扫描曲线表现出典型的深耗尽行为, 且准费米能级之上占据深能级界面态的电子状态保持不变. 当器件受紫外光照射时, 半导体耗尽层内的光生空穴将复合准费米能级之上的深能级界面态电子, 同时还将与氧化层内部的深能级施主态反应. 非理想样品积累区电容的下降可归因于绝缘层漏电导的急剧增大, 其诱发机理可能是与氧化层内的缺陷态及界面质量有关的“charge-to-breakdown”过程. 关键词： 原子层沉积 2O₃/n-GaN')" href="#">Al₂O₃/n-GaN 金属-氧化物-半导体结构 电容特性     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)= U0(1-T/(Tc+δ))n (1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)= 2.26.     

Interfacial studies of uncoated and coated NiTi particles in SnPbAg matrix

Uncoated and copper electroless coated fine NiTi superelastic particles have been incorporated into liquid SnPbAg matrix. The wettability of the Cu coating by the molten alloy was determined with a wetting balance. The composite interfaces have been investigated by Auger Spectroscopy. Uncoated NiTi reacted with the matrix to form Ni-Sn intermetallics, whereas the Cu layer of coated particles behaved as a sacrificial layer, leading to a small interfacial zone containing neither Cu-Sn nor Ni-Sn intermetallics. The mechanical characterisation of Cu-coated NiTi/SnPbAg composites shows a reinforcement of the composite material compared to the monolithic matrix, and also an unusual increase of the elongation at rupture. These results can be interpreted in terms of the superelastic properties of the NiTi SMA particles.     

Interfacial microstructure and growth mechanism of Al4C3 in Grf/Al composites fabricated by liquid pressure method

In this study, Gr_f/Al composite was fabricated by liquid pressure method. The diffusion layer and the nucleation and growth of Al₄C₃ were observed at the interface of Gr_f/Al composites by TEM and HRTEM. The growth mechanism of Al₄C₃ was analyzed in detail by crystallography theory. It was found that Al₄C₃ had no phase relations with the carbon fiber. (0 0 0 1) layer of Al₄C₃ was parallel with main growth direction. Both the diffusion layer at the interface and crystal structure of Al₄C₃ affected the shape of Al₄C₃. At a certain position, Al₄C₃ could connect two fibers when the fibers were close to each other.     

分子动力学模拟不同组分下CaO-Al2O3-SiO2系玻璃微观结构的转变

采用分子动力学模拟的方法研究了CaO-Al2O3-SiO2系玻璃的微观结构,发现Ca/Al=1/2时CaO-Al2O3-SiO2系玻璃(网硅酸盐体系)并不像传统理论认为的那样是一个完整的三维网络,而是存在一定量的非桥氧,从而从理论上进一步证实了Stebins等人的实验结果.同时也发现不同的Ca/Al比对Si和Al键接方式产生重要影响,在Ca/Al＞1/2时,Al比Si容易成为网络的中间体,其首先插入网络体中间;在Ca/Al＜1/2时,Si比Al容易成为网络中间体.虽然在能量上Al-O-Si占有扰势,但当Ca/Al从大于1/2变化到小于1/2时,仍有部分Al-O-Si转变成Al-O-Al和Si-O-Si,丰富了Al自回避规则的内容.     

银颗粒对Lu2O3:Eu薄膜光学性质影响

采用溶胶凝胶和提拉法制备了含有银颗粒的Lu2O3:Eu薄膜,利用X射线衍射,吸收光谱,光致发光光谱(PL)及荧光衰减光谱对其进行了表征,结果表明:所得材料在800℃下结晶完好,在发射光谱中观察到了银颗粒导致的Eu3 的发光增强效应,讨论了银颗粒对LU2O3:Eu薄膜发光性质的影响.     

常压MOCVD生长ZnO/GaN/Al2O3薄膜及其性能

以去离子水（H2O）和二乙基锌（DEZn）为源材料,生长温度是680℃时,利用常压MOCVD在GaN／Al2O3模板上成功生长了ZnO单晶薄膜,用原子力显微镜（AFM）、X射线双晶衍射（DCXRD）、光致发光谱（PL）对ZnO薄膜的表面形貌、结晶学性质、光学性质作了综合研究。双晶衍射表明,ZnO非对称（1012）面ω扫描的半峰全宽（FWHM）仅为420arcsec,估算所生长ZnO膜的位错密度大约为10^3／cm^2量级,这与具有器件质量的GaN材料的位错密度相当。在ZnO薄膜的低温15K光荧光谱中,观察到很强的自由激子和束缚激子发射以及自由激子与束缚激子的多级声子伴线。     

Al2O3:Fe3+体系晶格局域结构的EPR理论研究

本文通过分析Al2O3∶Fe3+体系中Fe3+离子的EPR谱,研究Fe3+的局域晶体结构结果表明Al2O3∶Fe3+的局域结构存在各向异性膨胀.用拟合EPR谱的低对称参量D和(a-F)实验值的方法,求得两个三棱锥的棱与C3轴的夹角分别为θ1=46.54°和θ2=61.26°,相对于原Al2O3结构的畸变角分别是Δθ1=-1.1°±0.1°,Δθ2=-1.8°.两畸变角同时均小于0说明Al2O3∶Fe3+体系中含Fe3+离子的晶格主要产生沿C3轴的伸长畸变.     

Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer

We studied the thermal stability of HfO₂ on an InP structure when an Al₂O₃ interface passivation layer (PL) was introduced. In contrast to the thick (～4 nm) Al₂O₃‐PL, an almost complete disappearance of the thin (～1 nm) Al₂O₃‐PL was observed after a post‐deposition anneal at 600 °C. Based on various chemical and electrical analyses, this was attributed to the intermixing of the thin Al₂O₃‐PL with HfO₂, which might have been accompanied by the out‐diffusion of a substantial amount of substrate elements. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

甲烷部分氧化制合成气Pt/Al_2O_3催化剂的表征及其反应性能评价

采用浸渍法制备了3种不同负载量的Pt/Al2O3催化剂,考察了催化剂的甲烷选择氧化性能,并用程序升温还原技术,程序升温脱附技术以及微型脉冲催化色谱技术对催化剂进行表征。结果表明,随着Pt的负载量升高,甲烷催化氧化的性能也越好,对CO与H2的选择性也越高。其中,在750℃原料气组成CH4/O2为2∶1,4%Pt负载量的催化剂,甲烷转化率达到98%以上。     

光谱纯Y2O3,La2O3,Lu2O3中微量杂质的光致发光谱研究

测定了光谱纯稀土化合物Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３中微量杂质在４８８．０ｎｍ和５１４．５ｎｍ激光线激发下的光致发光谱以及在可见光４４５～７４１ｎｍ范围内吸收谱，Ｙ２Ｏ３，Ｌｕ２Ｏ３样品在４４８．０ｎｍ和５１４．５ｎｍ激光激发下都有发光效应，而Ｌａ２Ｏ３样品只在４８８．０ｎｍ激光激发下才发光，分析了结果表明，Ｙ２Ｏ３，Ｌａ２Ｏ３，Ｌｕ２Ｏ３的发光谱分别是由其存在的微量Ｅｒ＾３＋，Ｓｍ＾３＋和Ｅｕ     

Cathodoluminescence of Lu 2 O 3 :Tb

Spectroscopic properties of Lu 2 O 3 :Tb pellets sintered at 1000 v C or 1700 v C were investigated. The sintering temperature did not influence the optically excited emission and excitation spectra of the materials. However, the treatment temperature did influence the emission under cathode-rays stimulation. While the specimens sintered at 1000 v C showed only luminescent lines above 480 v nm resulting from a radiative relaxation of the 5 D 4 level, the samples heated at 1700 v C did show some luminescence in the blue region resulting from 5 D 3 M 7 F J emission. The blue emission could be recorded exclusively upon cathode-rays irradiation.     

Formation and properties of Al composites reinforced by quasicrystalline AlCuFeB particles

Al-based composites reinforced by icosahedral (i-) Al₅₉Cu_25.5Fe_12.5B₃ quasicrystalline particles were prepared by solid-state sintering. It was found that Al diffusion from the matrix to the quasicrystalline particles induces phase transformation into the ω-Al₇Cu₂Fe tetragonal phase. In order to preserve the i phase, we used an oxidation pre-treatment of the particles and studied its influence on the kinetics of the phase transformation (Al + i → ω) as a function of temperature by high energy X-ray diffraction. The oxide layer acts as a barrier, reducing efficiently the diffusion of Al up to a sintering temperature of 823 K, allowing the control of the phases in the composites. The mechanical properties and the friction behaviour of the composites were investigated and show the negative influence of the oxide on the interface strength.     

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS$_{2}$ field-effect transistor (FET) using atomic layer deposition (ALD) Al$_{2}$O$_{3}$ as the gate dielectric layer. In this paper, NH$_{3}$ in situ doping, a process treatment approach during ALD growth of Al$_{2}$O$_{3}$, is used to decrease these defects for better device characteristics. MoS$_{2}$ FET has been well fabricated with this technique and the effect of different NH$_{3}$ in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH$_{3}$ in situ doping demonstrate obvious performance enhancements: $I_{\rm on}/I_{\rm off}$ is improved by one order of magnitude, from $1.33\times 10^{5}$ to $3.56\times 10^{6}$, the threshold voltage shifts from $-0.74 $ V to $-0.12$ V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS$_{2}$ FET performance is attributed to nitrogen doping by the introduction of NH$_{3}$ during the Al$_{2}$O$_{3}$ ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al$_{2}$O$_{3}$ layer. Furthermore, the MoS$_{2}$ FET processed by in situ NH$_{3}$ doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH$_{3}$ doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS$_{2}$ channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS$_{2 }$ devices.     

980 nm激发下Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的上转换发光特性

通过固相反应法制备了Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的样品,并对样品在980nm激光激发下的上转换发光特性进行了研究.从发射光谱可以发现,在可见光范围内有3个强的发光带,一个位于654nm附近的红光带和两个分别位于545nm、525nm附近的绿光带,分别对应于Er3+离子的以下辐射跃迁:4F9/2→4I15/2、4S3/2→4I15/2、2H11/2→4I15/2.其中又以Er3+离子的4F9/2→4I15/2跃迁产生的红色荧光辐射最强.对其上转换发光机制进行了分析,发现这三个发光过程都是双光子过程.对样品粉末进行了XRD检测,发现ZrO2主要以立方相为主,并且计算得到了这种立方结构的晶格常数.Al2O3固溶于ZrO2中,Al3+嵌入ZrO2后产生氧空位,导致ZrO2晶体的对称性降低,这种结构变化更有利于提高上转换效率,即上转换发光强度增强.     

Au/Al2O3催化剂的UV-Vis谱研究

研究了十六烷基三甲基溴化铵 (CTAB) /正己醇 /水体系的W/O微乳体系中 ,几种主要实验参数对用NaBH4还原氯金酸溶液制得的金纳米粒子大小的影响。实验结果表明 :微乳体系中水与表面活性剂的摩尔比rw 在所研究的范围内对金粒子大小影响不大 ,而氯金酸溶液的浓度对金粒子大小影响较大。通过优化制备条件 ,用两种不同的方法制备了Au/Al2 O3 催化剂 ,并用紫外 可见光谱、透射电镜 (TEM)和X射线衍射(XRD)对其进行表征 ,初步考察了不同制备方法对催化剂中活性组分Au粒大小的影响     

纳秒级脉冲激光诱导Zn掺杂过程中GaN/Al2O3 材料的温度分布及热形变解析分析

分析了纳秒级脉冲激光作用下GaN的激光诱导Zn的掺杂过程.利用简化的一维模型,给出一种比较直观的脉冲激光辐照下GaN/Al2O3材料温度分布的解析形式,得到了GaN材料表面温度与激光辐照时间的关系以及材料形变与深度的关系.在激光脉冲作用时,GaN材料表面的温度与辐照时间的平方根成正比.脉冲过后,材料温度分布梯度和热形变分布随深度发生变化,接近表面的温度梯度最大,热形变量也最大.而在连续脉冲作用时表面的温度呈锯齿状不断升高.     

Manipulating Bonding at a Cu/(0001)Al2O3 Interface by Different Substrate Cleaning Processes

Growth of Cu films on (0001)Al₂O₃ substrates can result in metallic Cu—Al or ionic-covalent Cu—O bonds at atomically abrupt interfaces. The type of bonding depends on the substrate cleaning procedure prior to film growth. Cu films deposited on Ar⁺-ion sputter-cleaned substrates exhibit interfacial Cu-L_2,3, Al-L_2,3 and O-K energy-loss near-edge structures that indicate the formation of metallic Cu—Al bonds at the Cu/Al₂O₃ interface. In contrast, growth on chemically cleaned -Al₂O₃ substrates results in interfacial energy-loss near-edge structures that suggest Cu—O bonding at the interface. The experimental electron energy-loss spectroscopic results are compared to calculated spectra, and the mechanisms causing the changes in the atomic and electronic structure are addressed.