Annealing temperature dependence of Raman scattering in Si/SiO2 superlattice prepared by magnetron sputtering

Si/SiO₂ superlattices were prepared by magnetron sputtering, and the deposition temperature and annealing temperature had a great influence on the superlattice structure. In terms of SEM images, the mean size of Si nanocrystals annealed at 1100 °C is larger than that of nanocrystals annealed at 850 °C. It was found that the films deposited at room temperature are amorphous. With increasing deposition temperature, the amorphous and crystalline phases coexist. With increasing annealing temperature, the Raman intensity of the peak near 470 cm⁻¹ decreases, and the intensity of that at 520 cm⁻¹ increases. Also, on increasing the annealing temperature, the Raman peak near 520 cm⁻¹ shifts and narrows, and asymmetry emerges. A spherical cluster is used to model the nanocrystals in Si/SiO₂ superlattices, and the observed Raman spectra are analyzed by combining the effects of confinement on the phonon frequencies. Raman spectra from a variety of nanocrystalline silicon structures were successfully explained in terms of the phonon confinement effect. The fitted results agreed well with the experimental observations from SEM images.     

Light emission from silicon nanocrystals: Probing a single quantum dot

Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a ∼6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a ∼60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.     

Strong violet luminescence from ZnO nanocrystals grown by the low-temperature chemical solution deposition

The luminescence properties of zinc oxide (ZnO) nanocrystals grown from solution are reported. The ZnO nanocrystals were characterized by scanning electron microscopy, X-ray diffraction, cathodo- and photoluminescence (PL) spectroscopy. The ZnO nanocrystals have the same regular cone form with the average sizes of 100-500 nm. Apart from the near-band-edge emission around 381 nm and a weak yellow-orange band around 560-580 nm at 300 K, the PL spectra of the as-prepared ZnO nanocrystals under high-power laser excitation also showed a strong defect-induced violet emission peak in the range of 400 nm. The violet band intensity exhibits superlinear excitation power dependence while the UV emission intensity is saturated at high excitation laser power. With temperature raising the violet peak redshifts and its intensity increases displaying unconventional negative thermal quenching behavior, whereas intensity of the UV and yellow-orange bands decreases. The origin of the observed emission bands is discussed.     

Size-dependent photo-induced shift of the first exciton band in CdTe quantum dots in glass prepared by a two-stage heat-treatment process

CdTe nanocrystals were grown from commercially available RG850 Schott filter glass by two-step heat-treatment process which almost doubles the particle to matrix volume fraction. A calculation shows that a quantized-state effective mass model in the strong confinement regime might be used to deduce the average radius for the nanocrystals larger than 2 nm in radius from the energetic position of the first exciton peak in optical absorption spectrum. Size-induced shift of ∼360 meV in the first exciton peak position was observed. The steady state photoluminescence spectra exhibit a broad band red shifted relative to the first exciton band, which indicates the existence of shallow trap states. The non-linear optical properties of CdTe nanocrystals were studied by room temperature resonant photoabsorption spectroscopy. The differential absorption spectra had three-lobed structure whose size-dependent evolution was explained by bleaching of the absorption, red shift and broadening in the Gaussian absorption band used to fit the first exciton peak. A maximum red shift of 2.32 meV for the average nanocrystal radius of 4.65 nm was estimated by fitting the photomodulation spectra with a combination of first and second derivative Gaussian absorption bands. We presume that the red shift is induced by the electric field of trapped charges in surface states. Internal electric field strengths of 23 and 65 kV/cm were predicted for the average nanocrystal radii of 3.95 and 4.65 nm, respectively, with the help of second-order perturbation theory in the strong confinement limit.     

Evidence for formation of Se molecular clusters during precipitation of CdSe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> nanoparticles in glass

While studying the effect of thermal treatment at 625–700°C on the formation of borosilicate glass-embedded CdSe or CdSe_1−x S _x nanocrystals, pronounced bands at 323 and 646 cm⁻¹ were observed in the Raman spectra. They are assigned to Se₂ clusters on the base of their frequency positions, widths, intensities, and resonance behavior. The precipitation of Se₂ molecular clusters in borosilicate glass is shown to occur when the heat treatment temperature and/or duration are beyond the range, most suitable for the formation of CdSe or CdSe-rich CdSe_1−x S _x nanocrystals.     

Synthesis and optical properties of single crystalline GaN nanorods with a rectangular cross-section

GaN nanorods were synthesized from the reaction of a Ga/Ga₂O₃ mixture with NH₃ on Si substrates by chemical vapor deposition. The synthesized products were characterized by scanning and transmission electron microscopy, X-ray diffraction, photoluminescence and Raman spectroscopy. The nanorods are highly single crystalline and possess uniform smooth surfaces. PL revealed only a strong emission at 3.268 eV, ascribed to free exciton (FX) transitions, at room temperature; while the well-known yellow luminescence band centered at 2.2-2.3 eV was not detected. Four first-order phonon modes, corresponding to the A₁(TO), E₁(TO), E₂(high), and A₁(LO) at ∼531, 554, 564, and 721 cm⁻¹, respectively, were observed by Raman backscattering. The red-shift of the FX emission peak and the down-shifts of the Raman modes by a few wave numbers are attributed to the presence of tensile strain inside GaN nanorods.     

Electroluminescence of silicon nanocrystals in MOS structures

We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiO_x (x<2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (>1000 °C) to induce the separation of the Si and the SiO₂ phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence (EL) signal with a peak at ∼850 nm. The EL peak position is very similar to that observed in photoluminescence in the very same device, demonstrating that the observed EL is due to electron–hole recombination in the Si nanocrystals and not to defects. The effects of the Si concentration in the SiO_x layer and of the annealing temperature on the electrical and optical properties of these devices are also reported and discussed. In particular, it is shown that by increasing the Si content in the SiO_x layer the operating voltage of the device decreases and the total efficiency of emission increases. These data are reported and their implications discussed. Received: 31 August 2001 / Accepted: 3 September 2001 / Published online: 17 October 2001     

Spectral dependence of the optical absorption temperature coefficient of CdS1−xSex nanocrystallites embedded in a silicate glass

The absorption temperature coefficient of CdS_1−xSe_x nanocrystallites embedded in a silicate glass has been studied in the temperature range above room temperature at different technological regimes and sizes of nanocrystals. To understand the optical properties of silicate glasses with semiconductor nanocrystallites, especially that at the initial stage of their formation, it is necessary to include the structural changes occurring in the nanocrystals during the heat treatment.     

Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture

Silicon nanocrystals synthesized by electron beam （e-beam） evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide （SRO） thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanoerystals. For the sample annealed at 1050℃, silicon nanoerystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy （HRTEM）. Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.     

Decay dynamics of ultraviolet photoluminescence in ZnO nanocrystals

Time resolved photoluminescence (PL) measurements at low temperature are performed on colloidal ZnO nanocrystals dispersed in t-butanol. Considering the particle size dependence of the decay times we conclude that the luminescence is composed of two trap related emissions one of which undergoes lifetime shortening due to a non-radiative process. Initial fast shift of the spectrum within 30 ps is observed and it is interpreted as a fast hole cooling just after the excitation.     

Laser heating method for estimation of carbon nanotube purity

A new method of a carbon nanotube purity estimation has been developed on the basis of Raman spectroscopy. The spectra of carbon soot containing different amounts of nanotubes were registered under heating from a probing laser beam with a step-by-step increased power density. The material temperature in the laser spot was estimated from a position of the tangential Raman mode demonstrating a linear thermal shift (-0.012 cm^-1/K) from the position 1592 cm^-1 (at room temperature). The rate of the material temperature rise versus the laser power density (determining the slope of a corresponding graph) appeared to correlate strongly with the nanotube content in the soot. The influence of the experimental conditions on the slope value has been excluded via a simultaneous measurement of a reference sample with a high nanotube content (95 vol. %). After the calibration (done by a comparison of the Raman and the transmission electron microscopy data for the nanotube percentage in the same samples) the Raman-based method is able to provide a quantitative purity estimation for any nanotube-containing material. Received: 11 December 2001 / Accepted: 12 December 2001 / Published online: 4 March 2002     

Variable-temperature Raman scattering study on anatase titanium dioxide nanocrystals

The temperature dependence of the Raman modes in anatase TiO₂ nanocrystals has been investigated over the temperature range 77-873 K. With increasing temperature, the frequency of the E_g mode at 639 cm⁻¹ shifts sublinearly to the lower frequencies, however, the frequency of the lowest-frequency E_g mode shifts sublinearly to the higher frequencies from 138 cm⁻¹ at 77 K to 152 cm⁻¹ at 873 K and the frequency of the B_1g mode at 397 cm⁻¹ increases firstly and attains a maximum near 350 K. The linewidth of all of the three modes increases linearly with increasing temperature. The anharmonic effects contribute a lot to the temperature dependence behavior of the frequency and linewidth of Raman modes in anatase TiO₂ nanocrystals.     

Identification of oxygen vacancy types from Raman spectra of SnO2 nanocrystals

Raman spectra acquired from spherical SnO₂ nanocrystals prepared by pulsed laser ablation and hydrothermal synthesis exhibit three oxygen‐vacancy‐related Raman modes at 234, 573, and 618 cm⁻¹. The peak location and intensity vary with annealing temperature under O₂ finally approaching those of bulk materials. Density functional calculation discloses that the three Raman modes stem from subbridging, in‐plane, and bridging oxygen vacancies, respectively. Raman spectra can thus be used to discern different types of oxygen vacancies in SnO₂ nanocrystals. Copyright © 2012 John Wiley & Sons, Ltd.     

Photoluminescence of GeO<Subscript>2</Subscript> films containing germanium nanocrystals

Germanium nanocrystals were formed in a GeO₂ film during the process of germanium monoxide gas-phase deposition onto a sapphire substrate and studied by photoluminescence (PL) and Raman scattering spectroscopy. A PL peak in this heterosystem was observed in the visible region at room temperature. The sizes of Ge nanocrystals were estimated from the position of a Raman peak corresponding to scattering by localized optical phonons in germanium. The PL peak position calculated with allowance for the electron and hole size quantization in Ge nanocrystals coincides well with the experimentally observed position of this peak.     

Functionalized CdS nanospheres and nanorods

Functionalized nanoparticles are discussed. Surfaces of CdS:Mn/ZnS core/shell nanospheres (Qdots) were converted from hydrophobic to hydrophilic by growth of a SiO₂ shell. The colloidal dispersion was stabilize by adding a surfactant with a negative surface charge, and a cell-penetrating-peptide, TAT, was attached through a primary amine group. The TAT functionalized Qdots were shown to pass the blood-brain-barrier and luminescence in the infused half of the brain.In addition, nanorods of S²⁻ rich CdS were synthesized by reaction of excess S with Cd precursors in the presence of ethylene diamine. The photoluminescence (PL) peak from the S²⁻ rich CdS nanorods was broad with a maximum at ∼710 nm, which was 40 nm longer in wavelength than the PL peak from Cd²⁺ rich CdS (∼670 nm) nanorods. The influence of surface electron or hole trap states on the luminescent pathway of CdS nanorods were used to explain these shifts in wavelength. Nanocrystals of Au with ∼2 nm diameters were grown on S²⁻ rich surfaces of CdS nanorods. Significant quenching of photoluminescence was observed from Au nanocrystals on CdS nanorods due to interfacial charge separation. Charge separation by Au nanocrystals on CdS resulted in enhanced UV photocatalytic degradation of Procion red mix-5B (PRB) dye in aqueous solution.     

Photo-induced creation of nitrogen-related color centers in diamond nanocrystals under femtosecond illumination

Diamond nanocrystals deposited on a dielectric mirror at the focus of a microscope objective have been illuminated by femtosecond laser pulses. We have observed the photo-creation of color centers, under peak power corresponding to an intensity of about . In a nanocrystal initially containing a single Nitrogen Vacancy (NV) center, femtosecond illumination resulted in the transformation of this center into another one with different spectral features. These features are tentatively attributed to the neutral form NV⁰. This irreversible transformation goes together with the photocreation of other unstable color centers at the laser focus. Such behavior under femtosecond laser illumination place some limitations on the use of sub-picosecond pulses to trigger single photon emission from a single NV center in diamond nanocrystal.     

Photoluminescence behaviors of single CdSe/ZnS/TOPO nanocrystals: Adsorption effects of water molecules onto nanocrystal surfaces

We report here the distinctive modifications of photoluminescence (PL) behaviors in single CdSe/ZnS/TOPO nanocrystals depending on their environments. Long-time traces of PL intensity from single nanocrystals have been obtained in both vacuum and a wet nitrogen atmosphere. While all of the nanocrystals in both environments exhibit PL blinking behaviors, i.e. on-off intermittency of PL intensity, as usual, some of the nanocrystals in the wet nitrogen atmosphere show significant increase in duration time of on-events. As for the duration time of blinking off-events, it is for the moment associated with the occasional events of carrier capturing at trap sites on or near the nanocrystal surfaces. We propose a model in which adsorbed water molecules at the trap sites on the nanocrystal surfaces transform them under light irradiation, which eventually decreases the occurrence of the trapping events due to their inactivation. It in turn increases the PL on-times. In addition to the drastic modification of the blinking profile, we also found that in the PL time traces some kinds of undulated behaviors, i.e. continuous and rather low frequency fluctuation of PL intensity, appear during each on-event in vacuum while they disappear totally in the wet nitrogen atmosphere. These results are also described on the basis of the inactivation model of the trap sites introduced above.     

Temperature induced size selective synthesis of hybrid Cds/pepsin nanocrystals and their photoluminescence investigation

There is growing interest in materials chemistry for taking advantage of the physical and chemical properties of biomolecules in the development of next generation nanoscale materials for opto-electronic applications. A biomimetic approach to materials synthesis offers the possibility of controlling size, shape, crystal structure, orientation, and organization. The great progress has been made in the control that can be exerted over optical materials synthesis using biomolecules (protein, nucleic acid)/mineral interfaces as templates for directed synthesis. We have synthesized the CdS nanocrystals using pepsin by biomimetic technique at four different set temperatures. X-ray diffraction (XRD) and small angle X-ray scattering (SAXS) results showed that we are able to tune the size and distribution profile just by tuning the reaction (Rx) temperature and goes towards excitonic Bhor radius (2.5 nm) at low temperature (4 °C). The narrow absorption peak at 260 nm from Cd²⁺-pepsin complex dominates and indicates the size dispersion of the modified CdS nanoparticles are fairly monodisperse. Effective mass approximation (EMA) shows large blue-shift (~1 eV) in the band gap for the cubic phase from bulk hexagonal CdS. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra are dominated by a strong and narrow band-edge emission tunable in the blue region indicating a narrow size distribution. The reduction in PL efficiency is observed when the Rx temperature increases however no change in PLE spectra and temporal profiles of the band-edge PL is observed. At 4 °C, high emission efficiency with shift of PL spectrum in the violet region is observed for 1.7 nm size CdS quantum dots (QDs). Presence of pepsin has slowed the PL decay which is of the order of 100 μs.     

Optical second harmonic generation and ordering effects in the system of ferroelectric barium titanate nanocrystals

The temperature dependence of the optical second harmonic generation in nanocrystalline BaTiO₃:Eu³⁺ revealed a strong hysteresis in the C_4v-O_h ferroelectric phase transition region. The explanation of the effect by the ordering processes in the system of ferroelectric nanocrystals is confirmed by the experiments in an external electric field.     

Photoluminescence of Si nanocrystals under selective excitation

Photoluminescence of Si nanocrystals passivated by different alkanes (hexane, octane, and tridecane) was studied at room temperature. It is shown that the emission band shape is not affected by the length of the carbon chain in the alkanes used for passivation. A pronounced fine structure of the photoluminescence band consisting of peaks separated by 150-160 meV was observed under resonant excitation. The structure is interpreted by predominant contribution from Si nanocrystal groups with particular stable size/shape existing in addition to the previously reported nanocrystals with “magic” numbers of Si atoms. The contribution of these stable nanocrystals is revealed using selective resonant photoexcitation to the higher energy states in the discrete energy spectrum of such nanocrystals.