Formation of gold-capped silicon nanocolumns on silicon substrate

Gold-capped silicon nanocolumns regularly distributed over silicon substrate were obtained. The columns length was roughly 100 nm; their deviation from perpendicular axis was less than 2°. The diameter of the columns was of the order of 10 nm or below of that. The proposed procedure of nanostructuring included the following main steps: deposition of aluminum thin layer (100–500 nm) by magnetron sputtering on (100) oriented Si wafers; formation of porous self-ordered alumina structures by electrochemical anodizing of the Al film in oxalic acid; electroless inversion of Au in alumina pores; and reactive ion etching. The obtained Si–Au structures are of importance as the platforms for biosensing applications, while the gold-free structures are of interest in photovoltaics.

     

Synthesis and characterization of cyclotriphosphazenes containing silicon as single solid-state precursors for the formation of silicon/phosphorus nanostructured materials

The synthesis and characterization of new organosilicon derivatives of N(3)P(3)Cl(6), N(3)P(3)[NH(CH(2))(3)Si(OEt)(3)](6) (1), N(3)P(3)[NH(CH(2))(3)Si(OEt)(3)](3)[NCH(3)(CH(2))(3)CN](3) (2), and N(3)P(3)[NH(CH(2))(3)Si(OEt)(3)](3)[HOC(6)H(4)(CH(2))CN](3) (3) are reported. Pyrolysis of 1, 2, and 3 in air and at several temperatures results in nanostructured materials whose composition and morphology depend on the temperature of pyrolysis and the substituents of the phosphazenes ring. The products stem from the reaction of SiO(2) with P(2)O(5), leading to either crystalline Si(5)(PO(4))(6)O, SiP(2)O(7) or an amorphous phase as the glass Si(5)(PO(4))(6)O/3SiO(2).2P(2)O(5), depending on the temperature and nature of the trimer precursors. From 1 at 800 degrees C, core-shell microspheres of SiO(2) coated with Si(5)(PO(4))(6)O are obtained, while in other cases, mesoporous or dense structures are observed. Atomic force microscopy examination after deposition of the materials on monocrystalline silicon wafers evidences morphology strongly dependent on the precursors. Isolated islands of size approximately 9 nm are observed from 1, whereas dense nanostructures with a mean height of 13 nm are formed from 3. Brunauer-Emmett-Teller measurements show mesoporous materials with low surface areas. The proposed growth mechanism involves the formation of cross-linking structures and of vacancies by carbonization of the organic matter, where the silicon compounds nucleate. Thus, for the first time, unique silicon nanostructured materials are obtained from cyclic phosphazenes containing silicon.     

Effect of current density on morphological,structural and optical properties of porous silicon

The morphology of porous silicon (PS) layers produced by electrochemical etching of n-type (100) silicon (Si) at different low current densities was studied using SEM, image J analysis and WSxM software. From FTIR spectroscopy analysis, the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. From Raman analysis, a full width half maximum (FWHM) of the Raman peak was gradually increased with increased current density, shifted towards lower energies due to reduce of crystallite size, the crystallite size in the PS varied from 63 nm to 20 nm depending on the current density. The optical response of the PS layer has been performed by the absorbance and Photoluminescence was studied experimentally in the visible range. The optical absorption and photo luminescence in PS is due to excitonic recombination between the defect states as well as on the surface of nanocrystals, and this was attributed to the presence of silicon hydride species which are confirmed by FTIR spectra. The red shift was observed in absorbance and Photoluminescence due to decrease in the size of Si crystallites and growth of Si=O bonds. The contact angle varied from 76° to 120.1°. From the wettability studies, the surface nature of the PS was converted from hydrophilic to hydrophobic when the current density increased.     

Solid state synthesis of water-dispersible silicon nanoparticles from silica nanoparticles

A solid state synthesis for obtaining nanocrystalline silicon was performed by high temperature reduction of commercial amorphous nanosilica with magnesium powder. The obtained silicon powder contains crystalline silicon phase with lattice spacings characteristic of diamond cubic structure (according to high resolution TEM), and an amorphous phase. In ²⁹Si CP MAS NMR a broad multicomponent peak corresponding to silicon is located at −61.28 to −69.45 ppm, i.e. between the peaks characteristic of amorphous and crystalline Si. The powder has displayed red luminescence while excited under UV illumination, due to quantum confinement within the nanocrystals. The silicon nanopowder was successfully dispersed in water containing poly(vinyl alcohol) as a stabilizing agent. The obtained dispersion was also characterized by red photoluminescence with a band maximum at 710 nm, thus enabling future functional coating applications.     

Possible lowest-energy geometry of silicon clusters Si21 and Si25

Possible lowest-energy structures of Si21 and Si25 are found on the basis of the starting structures obtained via the global search for nearly identical low-energy Stillinger-Weber (SW) and modified-SW structures. The fact that the lowest-energy structures are spherical-like may suggest that the prolate-to-spherical-like structural transition for the silicon cluster Sin is likely to occur in the range of 21 < n < 25.     

Determination of silicon in metals by thermal neutron activation

A new method of silicon determination in molybdenum by the³⁰Si(n, γ)³¹Si was developed. All the problems occurring during this analysis: standardization, quantitative dissolution, silicon sorption on vessels, reproducibility of β-counting...were carefully studied and new answers were brought to them. The chemical speratation of silicon was performed with a column of anion exchange resin in HCl-HF-H₂O₂ solution and a column of alumina at pH 9. Accuracy and reproducibility were controlled on standard samples prepared by fusion of inactive molybdenum and radioactive silicon in a plasma furnace.     

A one-step etching method to produce gold nanoparticle coated silicon microwells and microchannels

Gold (Au) nanoparticles (NPs) have large surface areas and novel optical properties and can be readily functionalized using thiol-based chemistry; hence, they are useful in bioanalytical chemistry. Here, we describe a one-step, plasma-etching process that results in the spontaneous formation of Au NP coated recessed microstructures in silicon (Si). Mechanistically, the plasma etch rate of Si was enhanced in the vicinity of 10-100 nm thick Au patterns resulting in the formation of microwells or microchannels uniformly coated with 20-30 nm sized Au NPs. The methodology provides versatility in the types of microstructures that can be formed by varying the shape and dimensions of the Au patterns and the etch time. We also describe selective binding of antibodies to Au NP coated Si microwells using thiol-based surface modification.     

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

Summary Thin silicon nitride films (100–210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar⁺ sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results.

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Quantitative Auger-Tiefenprofilanalyse von LPCVD- und PECVD-Siliciumnitridfilmen

     

Structures and relative stability of medium- and large-sized silicon clusters. VI. Fullerene cage motifs for low-lying clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80)

We performed a constrained search, combined with density-functional theory optimization, of low-energy geometric structures of silicon clusters Si(39), Si(40), Si(50), Si(60), Si(70), and Si(80). We used fullerene cages as structural motifs to construct initial configurations of endohedral fullerene structures. For Si(39), we examined six endohedral fullerene structures using all six homolog C(34) fullerene isomers as cage motifs. We found that the Si(39) constructed based on the C(34)(C(s):2) cage motif results in a new leading candidate for the lowest-energy structure whose energy is appreciably lower than that of the previously reported leading candidate obtained based on unbiased searches (combined with tight-binding optimization). The C(34)(C(s):2) cage motif also leads to a new candidate for the lowest-energy structure of Si(40) whose energy is notably lower than that of the previously reported leading candidate with outer cage homolog to the C(34)(C(1):1). Low-lying structures of larger silicon clusters Si(50) and Si(60) are also obtained on the basis of preconstructed endohedral fullerene structures. For Si(50), Si(60), and Si(80), the obtained low-energy structures are all notably lower in energy than the lowest-energy silicon structures obtained based on an unbiased search with the empirical Stillinger-Weber potential of silicon. Additionally, we found that the binding energy per atom (or cohesive energy) increases typically >10 meV with addition of every ten Si atoms. This result may be used as an empirical criterion (or the minimal requirement) to identify low-lying silicon clusters with size larger than Si(50).     

硅基超薄多孔氧化铝膜的制备

将二次阳极氧化法应用于硅基铝膜的制备, 在草酸溶液中得到了厚度可控的硅基超薄多孔氧化铝膜(PAM), 厚度小于100 nm. 实验中记录了氧化电流随时间的实时变化曲线, 发现硅衬底的氧化电流在大幅下降前有一小幅波动. 对应于Al/Si界面的氧化过程中, 孔洞底部之间的残留铝岛被优先氧化, 可将此作为终止铝氧化的标志. 扫描电镜(SEM)观察表明, 二次氧化提高了孔洞分布的均匀性, 使得孔在一定的区域内呈现有序六角分布.这种模板可进一步用于硅基纳米器件和纳米结构的制备.     

Detailed Structural Examinations of Covalently Immobilized Gold Nanoparticles onto Hydrogen‐Terminated Silicon Surfaces

The modification of flat semiconductor surfaces with nanoscale materials has been the subject of considerable interest. This paper provides detailed structural examinations of gold nanoparticles covalently immobilized onto hydrogen‐terminated silicon surfaces by a convenient thermal hydrosilylation to form Si? C bonds. Gold nanoparticles stabilized by ω‐alkene‐1‐thiols with different alkyl chain lengths (C₃, C₆, and C₁₁), with average diameters of 2–3 nm and a narrow size distribution were used. The thermal hydrosilylation reactions of these nanoparticles with hydrogen‐terminated Si(111) surfaces were carried out in toluene at various conditions under N₂. The obtained modified surfaces were observed by high‐resolution scanning electron microscopy (HR‐SEM). The obtained images indicate considerable changes in morphology with reaction time, reaction temperature, as well as the length of the stabilizing ω‐alkene‐1‐thiol molecules. These surfaces are stable and can be stored under ambient conditions for several weeks without measurable decomposition. It was also found that the aggregation of immobilized particles on a silicon surface occurred at high temperature (> 100 °C). Precise XPS measurements of modified surfaces were carried out by using a Au–S ligand‐exchange technique. The spectrum clearly showed the existence of Si? C bonds. Cross‐sectional HR‐TEM images also directly indicate that the particles were covalently attached to the silicon surface through Si? C bonds.     

The application of amine-terminated silicon quantum dots on the imaging of human serum proteins after polyacrylamide gel electrophoresis (PAGE)

Novel amine-terminated silicon (Si) quantum dots (QDs) were synthesized and applied for the detection of human serum proteins on gels directly after polyacrylamide gel electrophoresis (PAGE). The diameter of these stable amine-terminated Si?QDs was in the range of 0.5-2.0 nm. In this study, the fluorescent imaging conditions, such as the buffer solution, pH value, buffer concentration and quantity of Si?QDs, were optimized and the possible mechanisms of Si?QDs-protein interaction were analyzed. The mode of Si?QDs and human serum albumin association was found to occur by hydrogen bond interactions; this was probably attributed to the interaction between the amino group of amine-terminated Si?QDs and the carboxyl group of proteins. Meanwhile, human serum proteins separated by native 1D and native 2D electrophoresis were detected by Si QD-based fluorescent imaging. Some proteins, such as isoform 1 of α-1-antitrypsin, complement C3 (Fragment) and hemopexin, which were identified by mass spectrometry (MS), were easily detected by using Si?QDs, but not with CBB-R250 staining. The Si?QDs-based fluorescent imaging technique with high resolution is a sensitive and dependable method for direct detection of human serum proteins, and has enormous potential in clinical diagnosis.     

Using colloid lithography to fabricate silicon nanopillar arrays on silicon substrates

In this study, we partially grafted geminal silanol groups in the protecting organic shells on the surfaces of gold nanoparticles (AuNPs) and then assembled the alkyl-AuNP-Si(OH)(4) particles onto the surfaces of silicon (Si) wafers. The density of assembled AuNPs on the Si surface was adjusted by varying the geminal silanol group content on the AuNP surface; at its optimal content, it approached the high assembly density (0.0254 particles/nm(2)) of an AuNP assembled monolayer. Using reactive-ion etching (RIE) with the templates as masks, we transferred the patterned AuNP assemblies to form large-area, size-tunable, Si nanopillar arrays, the assembly density of which was controlled by the dimensions of the AuNPs. Using this colloidal lithography (CL) process, we could generate Si nanopillars having sub-10-nm diameters and high aspect ratios. The water contact angles of the high-aspect-ratio Si nanopillars approached 150°. We used another fabrication process, involving electron beam lithography and oxygen plasma treatment, to generate hydrophilic 200-nm-resolution line patterns on a Si surface to assemble the AuNPs into 200-nm-resolution dense lines for use as an etching mask. Subsequent CL provided a patterned Si nanopillar array having a feature size of 200 nm on the Si surface. Using this approach, it was possible to pattern sub-10-nm Si nanopillar arrays having densities as high as 0.0232 nm(-2).     

p-type macroporous silicon having three-dimensional structure

Macroporous silicon with three-dimensional structure was fabricated using organic-based electrolyte, dimethylformamide (DMF), in the p-type silicon. The obtained three-dimensional macroporous structures grew wholly along the <100> orientation of the p-type silicon wafer.     

Molecular dynamics implementation in MSINDO: study of silicon clusters

Born-Oppenheimer molecular dynamics is implemented in the semiempirical self-consistent field molecular orbital method MSINDO. The method is employed for the investigation of the structure and dynamics of silicon clusters of various sizes. The reliability of the present parameterization for silicon compounds is demonstrated by a comparison of the results of simulated annealing and of density functional calculations of Si(n) clusters (n = 5-7). The melting behavior of the Si(7) cluster is investigated and the MSINDO results are compared to previous high-level calculations. The efficiency of the present approach for the treatment of large systems is demonstrated by an extensive simulated annealing study of the Si(45) and Si(60) clusters. New Si(45) and Si(60) structures are found and evaluated. The relative stability of various energy minimum structures is compared with density functional calculations and available literature data.     

Planar tetracoordinated silicon in silicon carbonyl complexes: a DFT approach

Recently, some works have focused attention on the reactivity of the silicon atom with closed-shell molecules. With CO, silicon may form a few relatively stable compounds, i.e., Si(CO), Si(CO)(2), and Si[C(2)O(2)], while the existence of polycarbonyl (n > 2) silicon complexes has been rejected by current literature. In this paper, the reaction of silicon with carbonyl has been reinvestigated by density functional calculations. It has been found that the tetracoordinated planar Si(CO)(4) complex is thermodynamically stable. In Si(CO), silicon carbonyl, and Si(CO)(2), silicon dicarbonyl, the CO moieties are datively bonded to Si, and Si[C(2)O(2)], c-silicodiketone, is similar to the compounds formed by silicon and ethylene; Si(CO)(4), silicon tetracarbonyl, may be viewed as a resonance between the extreme configurations (CO)(2)Si + 2CO and 2CO + Si(CO)(2). A detailed orbital analysis has shown that the Si bonding with four CO is consistent with the use of sp(2)d-hybridized orbitals on silicon, giving rise to a planar structure about Si.     

Detailed structural examinations of covalently immobilized gold nanoparticles onto hydrogen-terminated silicon surfaces

The modification of flat semiconductor surfaces with nanoscale materials has been the subject of considerable interest. This paper provides detailed structural examinations of gold nanoparticles covalently immobilized onto hydrogen-terminated silicon surfaces by a convenient thermal hydrosilylation to form Si-C bonds. Gold nanoparticles stabilized by omega-alkene-1-thiols with different alkyl chain lengths (C3, C6, and C11), with average diameters of 2-3 nm and a narrow size distribution were used. The thermal hydrosilylation reactions of these nanoparticles with hydrogen-terminated Si(111) surfaces were carried out in toluene at various conditions under N2. The obtained modified surfaces were observed by high-resolution scanning electron microscopy (HR-SEM). The obtained images indicate considerable changes in morphology with reaction time, reaction temperature, as well as the length of the stabilizing omega-alkene-1-thiol molecules. These surfaces are stable and can be stored under ambient conditions for several weeks without measurable decomposition. It was also found that the aggregation of immobilized particles on a silicon surface occurred at high temperature (> 100 degrees C). Precise XPS measurements of modified surfaces were carried out by using a Au-S ligand-exchange technique. The spectrum clearly showed the existence of Si-C bonds. Cross-sectional HR-TEM images also directly indicate that the particles were covalently attached to the silicon surface through Si-C bonds.     

Functionalization of hydrogen-terminated silicon via surface-initiated atom-transfer radical polymerization and derivatization of the polymer brushes

Surface-initiated atom-transfer radical polymerization (ATRP) of poly(ethylene glycol) monomethacrylate (PEGMA) was carried out on the hydrogen-terminated Si(100) substrates with surface-tethered alpha-bromoester initiator. Kinetic studies confirmed an approximately linear increase in polymer film thickness with reaction time, indicating that chain growth from the surface was a controlled "living" process. The "living" character of the surface-grafted PEGMA chains was further ascertained by the subsequent extension of these graft chains, and thus the graft layer. Well-defined polymer brushes of near 100 nm in thickness were grafted on the Si(100) surface in 8 h under ambient temperature in an aqueous medium. The hydroxyl end groups of the poly(ethylene glycol) (PEG) side chains of the grafted PEGMA polymer were derivatized into various functional groups, including chloride, amine, aldehyde, and carboxylic acid groups. The surface-functionalized silicon substrates were characterized by reflectance FT-IR spectroscopy and X-ray photoelectron spectroscopy (XPS). Covalent attachment and derivatization of the well-defined PEGMA polymer brushes can broaden considerably the functionality of single-crystal silicon surfaces.     

Effect of continuous magnetic field on the growth mechanism of nanoporous anodic alumina films on different substrates

The effects induced by an external homogeneous magnetic field on the oxide film growth on aluminum in aqueous solutions of oxalic and sulfuric acid and on surface morphology of the alumina films were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on SiO₂/Si and glass-ceramic substrates. The pore diameter for oxalic acid alumina films on the SiO₂/Si substrate decreased by 0.8 nm, the interpore distance by 5.9 nm, and cell diameter by 6.9 nm if a magnetic field of 0.5 T was applied. When aluminum was anodized in sulfuric acid on the same substrate, the significant changes in parameters of porous structure of alumina, which were similar to the ones in oxalic acid, are firstly observed in stronger magnetic fields (of 0.7 T). On the basis of data obtained in this study and of previous investigation on the negative space charge and thermally activated defects in anodic alumina, we concluded that the intensity of the magnetic field is associated with energy of electron traps and that the changes of cell diameter characterize the trap concentration. The energy of electron traps in oxalic acid alumina films was proved to be smaller than the one in films formed in sulfuric acid, but the concentration of traps was of the same order of magnitude. When the substrate was replaced with the glass-ceramic one, the pore diameter in oxalic acid alumina films increased to ca. 17.6 nm.     

Polyaniline encapsulated silicon nanocomposite as high-performance anode materials for lithium ion batteries

Polyaniline encapsulated silicon (Si/PANI) nanocomposite as anode materials for high-capacity lithium ion batteries has been prepared by an in situ chemical polymerization of aniline monomer in the suspension of Si nanoparticles. The obtained Si/PANI nanocomposite demonstrates a reversible specific capacity of 840 mAh g^?1 after 100 cycles at a rate of 100 mA g^?1 and excellent cycling stability. The enhanced electrochemical performance can be due to that the polyaniline (PANI) matrix offers a continuous electrically conductive network as well as enhances the compatibility of electrode materials and electrolyte as a result of suppressing volume stress of Si during cycles and preventing the agglomeration of Si nanoparticles.