共查询到20条相似文献,搜索用时 0 毫秒
1.
《Electron Device Letters, IEEE》1987,8(7):294-296
InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's) have been fabricated from wafers grown by chemical beam epitaxy (CBE). These APD's exhibit low dark current (<25 nA at 90 percent of breakdown), low capacitance (≈0.2 pF), and good responsivity (0.75 A/ W at 1.3 µm). The pulse response, which is relatively independent of avalanche gain, is characterized by rise and fall times of approximately 1.4 ns. 相似文献
2.
Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers 总被引:2,自引:0,他引:2
Koch T.L. Koren U. Eisenstein G. Young M.G. Oron M. Giles C.R. Miller B.I. 《Photonics Technology Letters, IEEE》1990,2(2):88-90
The use of ultrathin etch-stop techniques to expand the vertical optical mode size adiabatically in 1.5-μm InGaAs/InGaAsP MQW lasers using a tapered-core passive intracavity waveguide structure is discussed. 30% differential quantum efficiency out the tapered facet, far-field FWHM of ~12° and a butt-coupling efficiency into a cleaved fiber of -4.2 dB, with -1-dB alignment tolerances of ~±3 μm, were achieved 相似文献
3.
《Quantum Electronics, IEEE Journal of》1988,24(3):496-500
High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of breakdown), good external quantum efficiency (greater than 90% at a wavelength of 1.3 μm), and high avalanche gain (≃40). In the low-gain regime, bandwidths as high as 8 GHz have been achieved. At higher gains, a gain-bandwidth-limited response is observed; the gain-bandwidth product is 70 GHz 相似文献
4.
High-speed InGaAsP/InP multiple-quantum-well laser 总被引:2,自引:0,他引:2
Lipsanen H. Coblentz D.L. Logan R.A. Yadvish R.D. Morton P.A. Temkin H. 《Photonics Technology Letters, IEEE》1992,4(7):673-675
The authors describe practical high-speed InGaAsP/InP lasers based on compressively strained quantum wells. Buried heterostructure lasers with threshold currents of 10 mA and slope efficiencies of 0.23 mW/mA are used. A modulation bandwidth of 20 GHz is obtained at a low drive current of 90 mA. A K factor of 0.25 ns is obtained and the intrinsic bandwidth of these lasers is estimated at 35 GHz 相似文献
5.
Y. Kawamura A. Wakatsuki Y. Noguchi H. Iwamura 《Photonics Technology Letters, IEEE》1991,3(11):960-962
An InGaAs/InGaAlAs multiple-quantum-well (MQW) laser was grown by gas source molecular beam epitaxy (GS-MBE). The laser has InP cladding layers and InGaAsP guiding layers, and the active layer is composed of an InGaAs/InGaAlAs MQW layer. Electrons are injected into the MQW active layer by tunneling through the barriers. The threshold current of the InGaAs/InAlAs buried-heterostructure (BH)-MQW lasers was as low as 9.6 mA. The relaxation oscillation frequency of the InGaAs/InAlAs MQW lasers was found to be larger than that of the InGaAs/InGaAsP MQW lasers with the same structure.<> 相似文献
6.
InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 ?m has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers. 相似文献
7.
Sugimoto Y. Torikai T. Makita K. Ishihara H. Minemura K. Taguchi K. Iwakami T. 《Electronics letters》1984,20(16):653-654
Planar-structure InP/InGaAsP/InGaAs avalanche photo-diodes have been realised by using a VPE-growth technique and a Be+ implanted guard ring. Sensitivity measurement has been performed at 1.3 ?m and 1.8 Gbit/s. The minimum average received level required for 10?9 BER was ?31.3 dBm, which was 1.2 dB better than the value for the Ge-APD. 相似文献
8.
《Electronics letters》2007,43(21):1143-1144
An emission wavelength of 2.33 mum in an InAs/InGaAs multiple-quantum-well laser grown by metal-organic vapour phase epitaxy is reported. The laser had an output power above 10 mW under continuous-wave operation at temperatures between 15 and 45degC. High-temperature operation up to 50degC and a characteristic temperature of 51 K were also confirmed. 相似文献
9.
Chen W.L. Munns G.O. East J.R. Haddad G.I. 《Electron Devices, IEEE Transactions on》1994,41(2):155-161
InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In0.75Ga0.25As/AlAs resonant tunneling double barrier as a hot electron injector, and an InP collector barrier with or without InGaAsP graded layers. The highest transport ratio (α) observed is 0.98, and the highest peak-to-valley current ratios (PVR's) measured are 20 and 200 in the collector current and base current, respectively, at 80 K. A self-consistent simulation is used as a reference to optimize the hot electron injector and to explain the ballistic transport. An energy spectrometer technique was applied to the RHET's for resolving the hot electron energy distribution which showed a full width at half maximum (FWHM) of around 58 meV, indicating ballistic transport of electrons. Finally, room temperature transistor action was also observed with a β of 4 and a cutoff frequency of 31 GHz 相似文献
10.
A new-structure multiple-quantum-well laser utilising superlattice waveguides and superlattice barriers is proposed and fabricated by molecular-beam epitaxy using GaAs/AlGaAs. Room-temperature CW operation with a threshold current of 40 mA and external differential quantum efficiency per facet of 20% is demonstrated. 相似文献
11.
State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5×5 μm2. Together with recent studies. These results demonstrate that the valved cracker technique is a very competitive nontoxic growth method 相似文献
12.
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported. 相似文献
13.
We studied the effects of Ar ion laser irradiation during the growth of InGaAs/ GaAs multiple quantum wells (MQW) structures
by metalorganic molecular beam epitaxy. Structural and optical properties were characterized by Nomarski microscopy, Dektak
stylus profiler, and low-temperature photoluminescence (PL) measurements. For MQW structures grown at a relatively low substrate
temperature (500°C), the laser irradiation influences greatly the growth process of the In^Ga^^As well and results in a large
blue shift of about 2000à in the PL peak. Such a large blue shift suggests that laser modification during growth could have
some novel applications in optoelectronics. On the other hand, the laser irradiation has relatively small effects on samples
grown at a higher substrate temperature (550°C). 相似文献
14.
Sugiura O. Dentai A.G. Joyner C.H. Chandrasekhar S. Campbell J.C. 《Electron Device Letters, IEEE》1988,9(5):253-255
By inserting a thin n-InP layer between the p+-InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DE gains as large as 2500 相似文献
15.
Lammert R.M. Cockerill T.M. Forbes D.V. Smith G.M. Coleman J.J. 《Photonics Technology Letters, IEEE》1994,6(9):1073-1075
Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Threshold currents of 2.65 mA for an uncoated device and 0.97 mA for a coated device have been obtained. A peak optical output power of 170 mW per uncoated facet for a device with a 4 μm active region width was also achieved. Peak emissions wavelengths range from 0.956 to 1.032 μm 相似文献
16.
Yu. N. Drozdov N. V. Baidus’ B. N. Zvonkov M. N. Drozdov O. I. Khrykin V. I. Shashkin 《Semiconductors》2003,37(2):194-199
Distribution of indium atoms in structures which contained double InGaAs/GaAs quantum wells and were grown by vapor-phase epitaxy from metal-organic compounds was studied. Experimental indium-concentration profiles were obtained using Auger electron spectroscopy. A model of growth with allowance made for indium segregation and a model for the Auger profiling were used in the calculations of profiles. Fitting calculated profiles to experimental ones made it possible to estimate the activation energies for In-Ga exchange in the context of a kinetic model for segregation. These energies are found to be somewhat higher than those that are well known for molecular-beam epitaxy, which is related to stabilization of the growth surface by hydrogen atoms in a vapor-phase reactor. 相似文献
17.
Jong-In Song Frei M.R. Hayes J.R. Bhat R. Cox H.M. 《Electron Device Letters, IEEE》1994,15(4):123-125
We report the first microwave characterization of an In0.52 Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor (HBT) with a buried InGaAs subcollector grown by selective epitaxy. The study compares two HBT's having identical 2×10 μm2 self-aligned emitter fingers but different subcollectors. Improvement in microwave performance of the selectively-grown HBT over the conventional HBT was observed due to the reduced parasitic base-collector capacitance achieved by incorporating the selectively-grown buried subcollector 相似文献
18.
Gee R.C. Chin T.-P. Tu C.W. Asbeck P.M. Lin C.L. Kirchner P.D. Woodall J.M. 《Electron Device Letters, IEEE》1992,13(5):247-249
The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBTs) with p-type carbon doping in InGaAs are reported. P-type carbon doping in the InGaAs base has been achieved by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl4) as the dopant source. The resulting hole concentration in the base was 1×1019 cm-3. HBTs fabricated using material from this growth method display good I -V characteristics with DC current gain above 500. This verifies the ability to use carbon doping to make a heavily p-type InGaAs base of an N-p-n HBT 相似文献
19.
报道了GSMBE方法生长波长1.84um的InGaAs/InGaAsP/InP应变激光器,40um条宽、800um腔长的平面电极条形结构器件,室温下以脉冲方式激射,20℃下阈值电流密度为3.8kA/cm^2,外微分量子效率为9.3%。 相似文献
20.
M. D. Vilisova I. V. Ivonin L. G. Lavrentieva S. V. Subach M. P. Yakubenya V. V. Preobrazhenskii M. A. Putyato B. R. Semyagin N. A. Bert Yu. G. Musikhin V. V. Chaldyshev 《Semiconductors》1999,33(8):824-829
This paper describes studies of InGaAs layers grown by molecular-beam epitaxy on InP (100) substrates at temperatures of 150–480
°C using various arsenic fluxes. It was found that lowering the epitaxy temperature leads to changes in the growth surface,
trapping of excess arsenic, and an increased lattice parameter of the epitaxial layer. When these lowtemperature (LT) grown samples are annealed, the lattice parameter relaxes and excess arsenic clusters form in the InGaAs matrix. For samples
grown at 150 °C and annealed at 500 °C, the concentration of these clusters was ∼8×1016 cm−3, with an average cluster size of ∼5 nm. Assuming that all the excess arsenic is initially trapped in the form of antisite
defects, the magnitude of the LT-grown InGaAs lattice parameter relaxation caused by annealing implies an excess arsenic concentration (N
As−N
Ga−N
In)/(N
As+N
Ga+N
In)=0.4 at.%. For layers of InGaAs grown at 150 °C, a high concentration of free electrons (∼1×1017 cm−3) is characteristic. Annealing such layers at 500 °C decreases the concentration of electrons to ∼1×1017 cm−3. The results obtained here indicate that this change in the free-electron concentration correlates qualitatively with the
change in excess arsenic concentration in the layers.
Fiz. Tekh. Poluprovodn. 33, 900–906 (August 1999) 相似文献