单壁碳纳米管电子输运特性的稳定性分析

基于变形单壁碳纳米管能量色散关系,计算了碳纳米管最低导带的电子速度及有效质量随形变系数变化的各种曲线,以此推测碳纳米管输运性质的稳定性问题.计算结果表明：对于特定类型的碳纳米管,只当其形变发生在某特定方向、且处于低形变（形变系数ε≤002 ）区时,电子平均速度v_mean及平均有效质量m^*_mean随形变改变才会很小（相对改变量≤2%）,这意味着此时的碳纳米管低偏压电子输运性能是基本稳定的.而其他形变情形,电子平均速度v_mean或电子平均有效质量m^*_mean或两者随形变变化明显,甚至有跃变,这意味着其低偏压电子输运性能是不稳定的,甚至极不稳定. 关键词： 变形单壁碳纳米管 电子速度 电子有效质量 输运性能稳定性     

卷曲效应对单壁碳纳米管电子结构的影响

利用计入卷曲效应的单壁碳纳米管(SWCNT)的能量色散关系,计算最低导带的电子速度及有效质量,并与不计入卷曲效应的结果进行了比较.计算结果表明:卷曲效应对电子速度及有效质量的影响与SWCNT的类型密切相关,金属锯齿型SWCNT对卷曲效应最为敏感,其次是扶手椅型SWCNT,最不敏感的是半导体锯齿型SWCNT.由此可以推断,卷曲效应对金属锯齿型SWCNT电子结构及低偏压输运特性影响最大,其次是扶手椅型SWCNT,影响最不明显的是半导体锯齿型SWCNT.这些结果与实验测量及密度泛函理论计算结果完全一致. 关键词： 单壁碳纳米管 卷曲效应 电子速度 电子有效质量     

单壁碳纳米管中电子的有效质量

解析研究了单壁碳纳米管中电子的有效质量，以及导带底的电子有效质量与其管径和螺旋度的关系.结果表明，单壁碳纳米管的几何结构对其电子有效质量有重要的影响.特别是锯齿形窄隙半导体管，发现其导带底的电子有效质量与管径的平方成反比. 关键词： 单壁碳纳米管 电子有效质量     

氮掺杂手性碳纳米管的电子结构和输运特性的理论研究

运用第一性原理的密度泛函理论,结合非平衡格林函数,研究了氮原子取代掺杂手性单壁(6,3)碳纳米管的电子结构和输运特性.计算结果表明:不同构形和不同数目的氮原子取代掺杂对手性碳管的输运性质有很复杂的影响.研究发现,氮原子掺杂明显改变了碳管的电子结构,使金属型手性碳管的输运性能降低,电流-电压曲线呈非线性变化,而且输运性能随着杂质原子间间距的变化而发生显著改变.在一定条件下,金属型碳管向半导体型转变. 关键词： 手性单壁碳纳米管 氮掺杂 电子结构 输运性能     

有限长双壁碳纳米管的电子输运性质

基于Landauer公式，研究了有限长的非公度和公度双壁碳纳米管的电子输运性顾，结果表明 ，双壁管的几何结构对其电子输运性质有显著的影响：非公度的双壁碳管的电导随能量的不 同，既可以是弹道型的，也可以是非弹道型的；由armchair管组成的公度的双壁碳管的电导 随能量变化呈现快速的电导振荡，并且此快速振荡叠加在背景慢振荡上，而zigzag管组成的 公度双壁管的电导随能量变化只有快速振荡、没有规则的慢振荡背景. 关键词： 碳纳米管 电子输运性质     

径向压缩碳纳米管的电子输运性质

研究径向压缩形变对碳纳米管电子输运性质的影响对搭建微纳碳基电子器件具有重要意义.本文利用分子动力学模拟方法研究了碳纳米管与金属界面接触构型,得出碳纳米管径向压缩形变的规律.模拟结果表明:碳纳米管在水平接触金属表面后,其稳定状态下的径向压缩形变大小会受接触长度、管径大小、金属种类和片层数量的影响.基于紧束缚密度泛函理论和...     

手性环状碳纳米管的电子结构及磁化特性

基于石墨平面π电子的紧束缚模型,导出了手性(chiral)环状碳纳米管(TCNTs)在磁场中的电子结构,从而对TCNTs量子特性和磁化规律进行了较深入研究.第Ⅰ,Ⅱ类TCNTs在磁场中存在金属—半导体的连续转变.计算分析表明:在T=0K时,第Ⅰ,Ⅱ类TCNTs的磁化强度随磁通量Φ呈线性周期性变化(以磁通量子Φ₀=h/e为周期),并且磁化强度对手性角θ、管口半径r,以及温度T极为敏感,但与环半径R无关.手性TCNTs的磁化强度比椅形或锯齿形TCNTs的磁化强度强很多;而第Ⅲ类TCNTs 关键词： 手性环状碳纳米管 电子结构 磁化特性     

碳纳米管量子点的电子输运

在紧束缚近似下,利用常量相互作用模型和Landauer-Bütticker公式,计算了扶手椅型和金属锯齿型碳纳米管量子点的电导。发现,根据碳纳米管量子点的长度的不同,扶手椅型碳纳米管量子点的电导可以具有两电子或四电子的壳层结构。而锯齿型碳纳米管量子点的电导却仅有四电子的壳层结构,与长度无关;这些理论结果与之前的实验结果符合的很好。     

单壁碳纳米管吸附氧分子的电子输运性质理论研究

用基于第一性原理的密度泛函理论和非平衡态格林函数方法对(4,4)单壁碳纳米管及其吸附氧气分子情况下的平衡态和非平衡态电导性质进行了研究. 发现在小于2 V的偏压下,系统对电压的增加呈现两种不同增长速率的电流响应,其中电压小于1.1 V时电流增加速率较大;而当电压大于该值后,电流对电压增加速率变缓. 吸附的氧分子提供双重的作用,一方面氧分子提供的能级有利于电子隧穿中心散射区;另一方面氧分子的电子态会破坏碳管的平移对称性,从而降低电子对系统的透射能力. 关键词： 单壁碳纳米管 氧分子吸附 电子输运 非平衡态格林函数     

不同激发波长下单壁碳纳米管与多壁碳纳米管的拉曼光谱比较

对不同激发波长下单壁和多壁碳纳米管的激光拉曼光谱进行了比较。发现单壁碳纳米管D峰强度和G峰强度的比值(ID/IG)几乎不随激发光子能量的改变而变化,多壁碳纳米管ID/IG值随着激发光子能量的增加以斜率0 3/eV减小。并对此现象进行了初步的分析。此外,还发现在1064nm激发波长下,单壁和多壁碳纳米管2500-3500cm-1之间拉曼峰的相对强度随着入射激光功率的增加而增加。     

Electronic transport properties of metallic single-walled carbon nanotubes

We have calculated the differential conductance of metallic carbon nanotubes by the scatter matrix methon.It is found that the differential conductance of metallic nanotube-based devices oscillates as a function of the bias voltage between the two leads and the gate voltage.Oscillation period T is directly proportional to the reciprocal of nanotube length.In addition,we found that electronic transport properties are sensitive to variation of the length of the nanotube.     

Influence of chirality on the thermal conductivity of single-walled carbon nanotubes

The influence of chirality on the thermal conductivity of single-walled carbon nanotubes(SWNTs) is discussed in this paper, using a non-equilibrium molecular dynamics(NEMD) method. The tube lengths of the SWNTs studied here are 20, 50, and 100 nm, respectively, and at each length the relationship between chiral angle and thermal conductivity of a SWNT is revealed. We find that if the tube length is relatively short, the influence of chirality on the thermal conductivity of a SWNT is more obvious and that a SWNT with a larger chiral angle has a greater thermal conductivity. Moreover, the thermal conductivity of a zigzag SWNT is smaller than that of an armchair one. As the tube length becomes longer, the thermal conductivity increases while the influence of chirality on the thermal conductivity decreases.     

Dependence of the electrical properties of defective single-walled carbon nanotubes on the vacancy density

The relationship between the electric properties and the vacancy density in single-walled carbon nanotubes has been investigated from first principles as well as the dependence of the influencing range of a vacancy in the nanotube on the nanotube chirality.Compared with the long-range interaction of the vacancies in a single-walled carbon nanotube with non-zero chiral angle,a much shorter interaction was found between vacancies in a zigzag single-walled carbon nanotube.In this study,we investigated the bandstructure fluctuations caused by the nanotube strain,which depends on both the vacancy density and the tube chirality.These theoretical results provide new insight to understand the relationship between the local deformation of a defective single-walled carbon nanotube and its measurable electronic properties.     

Electronic properties of multi-defected zigzag carbon nanotubes

Electronic properties of multi-defected zigzag single-walled carbon nanotubes are investigated by use of the tight-binding Green's function method. The Stone-Wales defects and the vacancies are considered. We find that the conductance sensitively depends on the realistic defect configurations for the metallic zigzag carbon nanotubes. Interestingly, the electronic transport properties of the nanotubes with three vacancies can be considered as the sum effect of two double-vacancies, while those with Stone-Wal...     

On the size of small single-walled carbon nanotubes

We derive a formula relative to the diameter/length ratio of a small single-walled carbon nanotube by means of calculations referring to Fermi energy. These calculations arise from the consideration of the Fermi's velocity for a multiwalled carbon nanotube.     

Effects of various defects on the electronic properties of single-walled carbon nanotubes: A first principle study

The geometries,formationenergies and electronic band structures of （8, 0） and （14, 0） singlewailed carbon nanotubes （SWCNTs） with various defects, inehlding vaeaney, Stone-Wales defect, and octagon pentagon pair defect, have been investigated within the framework of the density- huictional theory （DFT）, and the influence of the concentration within the same style of deflect on the physical and chenfical properties of SWCNTs is also studied. The results suggest that the existeilcc of vacancy and octagon-pentagon pair deflect both reduce the band gap, whereas the SW- defect induces a band gap opening in CNTs. More int, erestingly, the band gaps of （8, 0） and （14, 0） SWCNTs eonfigurations with two octagon pentagon pair defect presents 0.517 eV and 0.163/eV, which arc a little smaller than the perfectt CNTs. Furthermore, with the concentration of defects increasing, there is a decreasing of band ga.p making the two types of SWCNTs change from a semiconductor to a metallic conductor.     

Structural and vibrational properties of deformed carbon nanotubes

The fantastic variation of the physical properties of carbon nanotubes (CNTs) and their bundles under mechanical strain and hydrostatic pressure makes them promising materials for fabricating nanoscale electromechanical coupling devices or transducers. In this paper, we review the recent progress in this field, with much emphasis on our first-principles numerical studies on the structural and vibrational properties of the deformed CNTs under uniaxial and torsional strains, and hydrostatic pressure. The nonresonant Raman spectra of the deformed CNTs are also introduced, which are calculated by the first-principles calculations and the empirical bond polarizability model.      

扶手椅型单壁碳纳米管中的B/N对共掺杂

利用第一性原理电子结构计算方法,研究了扶手椅型单壁碳纳米管（SWCNT）的B/N对掺杂效应.研究发现,对于扶手椅型SWCNT两个不同的掺杂位点,B/N对更容易发生在与管轴线成30°角的P₁位点上.B/N对的掺杂使得金属性SWCNT能隙打开,且能隙随着B/N对轴向掺杂浓度的升高而逐渐增大.同时,还发现两B/N对掺杂后SWCNT的电子结构敏感地依赖于B/N对在圆周上的相对位置,能隙随着B/N对相对距离的增大而增大.这归结于B/N对的掺入影响了原有的电荷分布,这种影响是局域的 关键词： 单壁碳纳米管 B/N对掺杂 电子结构 第一性原理