乙二胺四乙酸对碳酸钡粒子形貌影响的研究

以硝酸钡和碳酸铵为原料,采用共沉淀法,通过添加和控制乙二胺四乙酸(EDTA)用量,制备出哑铃状、球状和圆柱状等不同形貌的碳酸钡粒子.采用TG/SDTA、SEM 、FT-IR和XRD等对产品进行分析与表征,结果表明:不同形貌碳酸钡粒子均属正交晶系,粒子分布均匀,粒度较小,形貌完整.同时对形貌控制机理进行了初步分析.     

水热法合成羟基磷灰石的微分析研究

以CaCO3和CaHPO4·2H2O为前驱体,采用水热法制备了羟基磷灰石(HAP)晶体,利用X射线衍射(XRD)、扫描电镜(SEM)及X射线能谱分析仪(EDS)系统研究了pH值、水热温度、反应时间、Ca2+浓度等条件对合成HAP晶体微结构及晶体生长的影响,同时对其生长机理进行了探讨.结果表明:随着水热合成温度的升高、时间的延长、Ca2浓度的增加,晶体发育越完整,HAP晶体的长径比呈增大趋势;体系的pH值对HAP晶体的生长有较大的影响,随着pH值的增加HAP晶粒的大小、长径比减小趋势明显;在水热温度为200℃,pH值=10,时间8h的条件下,可得到结晶度高、晶形完整清晰,端面尺寸在50～ 70 nm,生长极性明显的六方柱状的一维n-HAP晶体.EDS分析结果证实合成的HAP平均钙磷比约为1.70左右,同理论值比较相符.点分析研究表明晶体端面的钙磷比比平均的略高,钙磷比约为1.75,从而证明了Ca2+的浓度直接影响着HAP晶体的极性生长.     

不同晶形超细碳酸钡粒子的制备研究

本文分别采用均相沉淀法和共沉淀法合成了碳酸钡粒子.通过添加合适的晶形控制剂,合成了线状、柱状和球状等不同晶形的碳酸钡粉体,利用扫描电子显微镜(SEM)和X射线衍射仪(XRD)进行了表征,并对不同晶形碳酸钡的形成机理进行了初步的探讨.     

绒毛球状碳酸锶的沉淀法制备与表征

以柠檬酸三钠为晶形控制剂,采用简单沉淀法合成了绒毛球状SrCO3晶体.用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、傅里叶红外光谱仪(FTIR)、热重分析仪(TG)、透射电镜(TEM)和能谱仪(EDX)等对样品的结构和形貌进行了表征.结果表明,绒毛球状SrCO3的主体结构为微米级实心球,实心球壳表面被一层稠密的粒径为5～15 nm、长度为100 ～ 150 nm的毛发状晶体所覆盖;机理分析认为绒毛球状SrCO3的形成可以用“棒状-束状-哑铃形-球形”的生长机理(RBDS)进行解释.     

KCl辅助EDTA水热合成t-LaVO4∶Eu3+粉体

以LaCl3·nH2O、Eu2O3和NH4VO3为原料,采用KCl和EDTA为辅助剂,在较高pH值下水热合成了t-LaVO4∶Eu3+粉体.通过添加KCl和EDTA的不同组合,分析了对LaVO4∶Eu3粉体微观结构及荧光性能的影响.结果表明:当初始溶液pH=11和12时,添加KCl+EDTA可制备单一四方相LaVO4∶Eu3+粉体,并推断了LaVO4∶Eu3+晶体的形成机理.加入KCl影响了LaVO4∶Eu3的晶体结构,使LaVO4∶Eu3+粉体颗粒尺寸增大,荧光性能增强.当Eu掺杂摩尔浓度为5;时,LaVO4∶ Eu3+束状棒有最高的红光发射强度.     

EDTA对超临界二氧化碳法制备碳酸钡粒子形貌影响的研究

以氢氧化钡和二氧化碳气体为原料,采用超临界二氧化碳法,通过添加乙二胺四乙酸(EDTA)并控制其用量,制备出柱状、棒状、椭球状和球状等不同形貌的碳酸钡颗粒.采用TG/SDTA、SEM、XRD和FT-IR等对产品进行分析与表征,结果表明:不同形貌碳酸钡粒子均属于正交晶系.同时对EDTA形貌控制机理进行了初步分析.     

利用全息相衬干涉显微术研究EDTA对KDP晶体生长习性的影响

利用全息相衬干涉显微术(HPCIM)研究了EDTA对KDP晶体(100)柱面和(101)锥面生长习性的影响.通过界面边界层宽度的变化,可以直观地观测到在溶液中添加少量的EDTA后,促使KDP晶体沿柱面和锥面的生长,特别是对柱面的影响更为显著,并对此作了解释.最佳的EDTA浓度范围有待于进一步研究.     

软模板调控碳酸锶结晶特性的研究

本文在实验室的条件下,通过用均相沉淀法和共沉淀法,采用多聚磷酸钠、酒石酸钠、EDTA/氯化锌、EDTA、氯化镁作为晶形控制剂分别合成了长为2～4μm,直径为200nm左右的柱状、长为1～3μm,直径为80nm左右的线状、长为1～2μm,直径为50nm左右的线状、粒径为200nm左右的球状以及粒径为2～3μm的不规则状等碳酸锶晶体.并且对利用多种软模板调控碳酸锶晶体的生长机理进行了初步的分析,得出了软模板导致晶体结晶的大小和形貌变化的多样性机理.     

室温固相反应制备超细碳酸钡粒子的研究

以BaCl2·2H2O和Na2CO3为原料,采用固相法合成了碳酸钡粒子.通过添加合适的晶形控制剂,选择合适的用量,合成了球状和针状碳酸钡粉体,利用扫描电子显微镜(SEM)和x射线衍射仪(XRD)进行了表征,结果表明:在无控制剂和添加控制剂LSX-2时,生成了球状碳酸钡粒子,添加控制剂LSX-3时,生成了针状碳酸钡粒子,且各粒子均为正交晶系碳酸钡.     

配合物晶体MnHg(SCN)4的晶形分析

配合物晶体MnHg(SCN)4中维系晶体结构的化学键是-Mn-NCS-配位键.从MnHg(SCN)4晶体中配位键的分布特点出发,对属于点群4的单形四方四面体、四方柱和平行双面进行分析,确定晶形中不能出现平行双面{001}、四方柱{110},可以出现的单形为四方四面体{101}和{011}及四方柱{100},而且四方四面体{101}和{011}单形最发育.由结构分析得出的晶形特点与实际晶体晶形特点相符.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

A SAXS study of kinetics of aggregation of silica sols

SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.