Chemical etching of hot‐pressed p‐type polycrystalline SiC surfaces by HF/K2S2O8 solutions

In this work, an experimental study on the etching of p‐type hot‐pressed silicon carbide (SiC) was carried out in HF/K₂S₂O₈ solutions. The SiC wafers used in this work were p‐type polycrystalline materials, supplied by Goodfellow, with an acceptor concentration of 2.31 × 10¹² cm^?3. The SiC substrate was a hot‐pressed material, the latter realized from a mixture of 1 part of SiO₂ with 3 parts of C (carbon) ‘1SiO₂ + 3C’ heated in an oven at 2500 °C. In order to facilitate the chemical etching of the SiC substrate, a thin aluminium film was deposited on the SiC substrate. The morphology of the etched surface was examined with varying K₂S₂O₈ concentration. The surfaces of the etched samples were analysed using secondary ions mass spectrometry (SIMS), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT‐IR) and photoluminescence (PL). The surface morphology of the samples etched in HF/K₂S₂O₈ is shown to depend on the solution composition. The investigation of the effect of the HF/K₂S₂O₈ solution on SiC samples shows that as K₂S₂O₈ concentration increases, the chemical etching reveals defects with random geometry. Finally, chemical etching of p‐type SiC induces a decrease in the PL intensity, which indicates clearly the defects on the polycrystalline SiC surface. In addition, the result is very interesting, as to date no chemical etching solution at low temperature (<100 °C) has been developed for SiC. Finally, we have proposed a dissolution mechanism of SiC in 2HF/1K₂S₂O₈ solutions. Copyright © 2007 John Wiley & Sons, Ltd.     

Multicycle chronoamperometry at rotating ring-disc electrode as a method of current separation into partial currents of silver ionization,Ag<Subscript>2</Subscript>O formation and its chemical dissolution in alkaline medium

A method of multicycle chronoamperometry at rotating ring-disc electrode is suggested for experimental separation of the disc polarization current into its components that correspond to the substrate metal ionization, an oxide formation, and the oxide chemical dissolution. The method was validated by the example of the Ag|Ag₂O|OH^?(H₂O) system. At moderate anodic potentials of Ag-disc (0.48–0.51 V), silver active dissolution from open areas of its surface and through film’s pores dominates; the phase-forming current, hence, the current efficiency of this process drops down rapidly. At the potentials of the maximum at voltammograms (0.52–0.53 V), when the silver active dissolution current is suppressed, the phase-forming currents dominate; they exceed the oxide chemical dissolution rate significantly. The Ag₂O film thickness increases rapidly, the current efficiency of the oxide formation process approaches 100% during the entire disc polarization period. The Ag(I)-oxide chemical dissolution rate constant practically does not depend on the anodic phase-formation potential; however, it somewhat varies depending on the oxide film thickness, thus reflecting changes in the film structure and, possibly, chemical composition (from AgOH to Ag₂O).     

Bioactive and Protective Sol-Gel Coatings on Metals for Orthopaedic Prostheses

The aim of this work has been the preparation and evaluation of sol-gel coatings for clinical applications. Research was focussed in the development of highly corrosion resistant and/or bioactive sol-gel coatings onto AISI 316L stainless steel. Hybrid SiO₂ sol-gel coatings inhibited corrosion and Fe diffusion, although no signal of bioactivity was detected. The inclusion of Ca- and P-alcoxides in the sol composition did not promote bioactivity. Bioactive coatings were obtained from suspensions prepared by adding glass (CaO·SiO₂·P₂O₅) particles to an hybrid organic-inorganic SiO₂ sol. The dissolution of glass particles promoted in vitro induction of apatite along with a slight reduction in the corrosion resistance of coated pieces. By combining an inner SiO₂ hybrid film acting as barrier against corrosion with an outer coating containing bioactive glass particles, a significant improvement in the electrochemical behaviour was observed. This double-layered coating showed in vitro signals of bioactivity, and preliminary in vivo tests gave promising results.     

Organic Thin Film Transistors Based on 2,3‐Dimethylpentacene and 2,3‐Dimethyltetracene

2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO₂/Si surface. Thin film transistors prepared on SiO₂/Si and n‐nonyltrichlorosilane‐modified SiO₂/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO₂/Si substrate gave the highest field‐effect mobility of 0.46 cm²/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm²/Vs.     

Novel Sn Doped Co3O4 Thin Film for Nonenzymatic Glucose Bio‐Sensor and Fuel Cell

A facile chemical solution deposition via two‐step spin coating technique was used to fabricate nano‐particulate novel Sn doped Co₃O₄ thin film for glucose sensor and fuel cell applications. Substitution of Sn into Co₃O₄ host lattice lead to a remarkable increase in the electrocatalytic activity of the Co₃O₄ electrode material. Film thickness played a significant role in enhancing the charge transferability of the electrode as was observed from electrochemical impedance spectroscopy (EIS). The best sensor exhibited two wide linear response ranges (2 μM up to ∼0.5 mM and 0.6 mM up to ∼5.5 mM respectively) with sensitivities of 921 and 265 μA cm⁻² mM⁻¹ respectively and low limit of detection of 100 nM (S/N=3). The sensor was very selective towards glucose in the presence of various interference and showed long term stability. Moreover, the developed thin film modified electrode could generate one electron current in nonenzymatic fuel cell setup at room temperature.     

Poly(MAA-Mn) for Triple-Layer Structure Synthesis of ZnS/ZnS:Mn/SiO2 Phosphors

Methacrylic acid (MAA) was used as a manganese carrier to prepare ZnS/MAA-Mn particles, and ZnS/ZnS:Mn phosphors were formed from ZnS/MAA-Mn by ion substitution through heat treatment. After silica coating on surface by chemical precipitation method with tetraethyl orthosilicate (TEOS), ZnS/ZnS:Mn/SiO₂ phosphors were prepared successfully as a new core/shell structure compound. The thickness of layers was controlled by adjusting concentrations of manganese (II) acetate (Mn(CH₃COO)₂) and TEOS. Structure, morphology, and composition of prepared phosphors were investigated by X-ray diffraction (XRD), transmission electron microscope (TEM), and X-ray photoelectron spectroscopy (XPS), respectively. Photoluminescence (PL) properties of ZnS with different Mn²⁺ content were analyzed by PL spectrometer. PL emission intensity and PL stability were analyzed for evaluating effects of silica coating and Mn²⁺ activator doping. As a result, the structure of two layers could be observed, and optimum composition of ZnS/ZnS:Mn/SiO₂ structure was also obtained.     

A novel spinel coating on cobalt‐based Superalloy GH605 via an in‐situ oxidation approach

Cr‐Mn‐O spinel coating was prepared on the surface of cobalt‐based superalloy GH605 via an in‐situ oxidation method in H₂O‐H₂ environment. The composition, morphology, and chemical value state of the oxide spinel coatings were investigated by SEM, EDS, XRD, Raman spectra, and XPS. It indicated that the morphology of coating varied with oxidation temperature, and granular surface appeared when oxidation temperature increased to 1100°C. The formed Cr‐Mn‐O spinel coating was composed of Cr₂O₃ and MnCr₂O₄, and the thickness increased significantly with oxidation temperature. In the coating, Cr element existed in the state of Cr³⁺ ions and Cr⁶⁺ ions, while Mn element only existed in the form of Mn²⁺ ions.     

Surface characteristics of AZ91D alloy anodized with various conditions

Anodic oxidation of an AZ91D magnesium alloy was carried out in an attempt to increase the corrosion resistance. The alloy was placed in an electrolyte containing 0.1 M sodium silicate (Na₂SiO₃), 2.0 M sodium hydroxide (NaOH) and 0.1 M sodium phosphate (Na₃PO₄), and treated with a current density of 100–400 mA/cm² for 1 to 4 min. After the anodic oxidation treatment, the surface characteristics were analyzed by SEM, X‐ray diffraction (XRD) and a surface roughness tester. The corrosion resistance was determined by measuring the corrosion potential and corrosion current density using potentiodynamic polarization in a 3.5 wt% NaCl electrolyte solution. Although the anodic oxidation treatment with the base electrolyte resulted in an arrival voltage ranging from 60 to 70 V, the addition of silicate tended to reduce this arrival voltage by approximately 10–20 V and decrease the critical voltage required for the formation of a porous oxide film. The pore size and film thickness increased with increasing applied current and treatment time. The addition of silicate to the electrolyte resulted in films with a homogeneous pore size and a film thickness increasing with the increasing applied current and treatment time. XRD showed the formation of a new MgO and Mg₂SiO₄ phase. The formation of Mg₂SiO₄ was attributed to the presence of SiO₄^4? in the film. After the addition of silicate, the corrosion potential increased and corrosion current decreased, resulting in improved corrosion resistance. Copyright © 2008 John Wiley & Sons, Ltd.     

Characterization of zinc-modified lithium tantalate thin films fabricated by chemical solution deposition method

Zinc-substituted lithium tantalate thin films were fabricated for improving the electrical resistivity by compensating the valence of lattice defects in LiTaO₃ crystal. The films with the chemical composition of (Li_1.00-x Zn _x )TaO₃ were fabricated on (111)Pt/TiO₂/SiO₂/(100)Si substrate by a chemical solution deposition technique using metal-organic precursors. Dense films consisting of a ilumenite-type crystalline phase were deposited by spin coating on the substrates, followed by heat-treatment at 650°C for 5 min in air. The leakage current density of the LiTaO₃ film was reduced from approximately 10⁻⁴ to 10⁻⁶ A/cm² by substituting Zn²⁺ ions for Li⁺ ions in the LiTaO₃ films. Polarization–electric field hysteresis loop was improved significantly by partial substitution of Zn²⁺ for Li⁺ ions, which is based on the enhancement of electrical resistivity.     

Basic Indole Ring Enantiomer Separation on Cellulose Tris(3,5‐dimethylphenylcarbamate) Coated TiO2/SiO2 Chiral Stationary Phase

Abstract

Cellulose tris(3,5‐dimethylphenylcarbamate) (CDMPC) coated TiO₂/SiO₂ has been prepared by coating CDMPC on TiO₂/SiO₂ which consists of micrometer‐sized silica spheres as core and nanometer‐sized titania particles as surface coating. Eight basic indole ring derivative enantiomers were separated on this CDMPC coated CSP and symmetrical peaks were obtained using hexane as the mobile phase and various alcohols as modifiers. The influence of the mobile phase composition and structural variation of the solutes on the enantioseparation was investigated and discussed.     

Effect of formulation of silica‐based solution on corrosion resistance of silicate coating on hot‐dip galvanized steel

Several silica‐based solutions with 50 g/l of SiO₂ were prepared from sodium silicate solutions and silica sol; the silicate conversion coatings were obtained by immersing hot‐dip galvanized steel sheets in these solutions. These solutions were characterized using high‐resolution transmission electron microscopy and ²⁹Si nuclear magnetic resonance; the morphology of the coatings was observed by SEM and atomic force microscopy while the corrosion resistance was evaluated by electrochemical measurements as well as neutral salt spray tests. The results show that the coatings obtained from the single silica sol solution had poor adhesion and the coating obtained from the sodium silicate solution with low SiO₂/Na₂O molar ratio was uneven. By adding the silica sol to the silicate solution with low molar ratio, uniform coatings with better protection property were obtained. According to the results of ²⁹Si nuclear magnetic resonance spectra, the effects of the distribution of silicate anions with various polymerization degrees in the silica‐based solutions on the microstructure and corrosion resistance of the silicate coatings are discussed. Copyright © 2016 John Wiley & Sons, Ltd.     

Effect of Cu in electroless Ni–Cu–P coating on passivation process

Electroless Ni–P and Ni–Cu–P coatings were passivated by chromate conversion treatment respectively. The anticorrosive performances of passivated coatings were investigated by potentiodynamic polarization and electrochemical impedance spectroscopy measurements. The passivated Ni–Cu–P coating exhibited a high corrosion resistance with the i_corr of 0.236 μA/cm,² while the value of passivated Ni–P coating was only 1.030 μA/cm,² indicating the passive film could improve the corrosion resistance of Ni–Cu–P coating to a significant extent. High‐resolution X‐ray photoelectron spectroscopy was used to determine the chemical states of elements detected in the passive film. Compared with passivated Ni–P coating, the passive film on Ni–Cu–P coating exhibited a higher ratio of Cr₂O₃ to Cr(OH)₃ with the value of 72:28, which was the main factor for passivated Ni–Cu–P coating showing excellent corrosion resistance. The effect of Cu in electroless Ni–Cu–P coating on passivation process was discussed by the contrast experiment. Copyright © 2016 John Wiley & Sons, Ltd.     

Ultrathin polymer gate buffer layer for air‐stable,low‐voltage,n‐channel organic thin‐film transistors

An ultrathin poly(methyl methacrylate) (PMMA) buffer layer was developed to improve the performance of n‐channel organic thin‐film transistors (OTFTs). The 8 nm‐thick PMMA film, prepared by spin‐coating, provided a very smooth surface and a uniform coverage on SiO₂ surface reproducibly, which was confirmed by X‐ray reflectivity (XR) measurement. Then, we fabricated N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C13) thin‐film transistors with and without this 8 nm‐thick PMMA insulating layer on SiO₂ gate insulators and achieved one‐order increase of field‐effect mobility (up to 0.11 cm²/(Vs) in a vacuum), one‐half decrease of threshold voltage, and reduction of current hysteresis with the PMMA layer. Only TFTs with the PMMA layer displayed n‐channel operation in air and showed field‐effect mobility of 0.10 cm²/(Vs). We consider that electrical characteristics of n‐channel OTFTs were considerably improved because the ultrathin PMMA film could effectively passivate the SiO₂ insulator surface and decrease interfacial electron traps. This result suggests the importance of the ultrathin PMMA layer for controlling the interfacial state at the semiconductor/insulator interface and the device characteristics of OTFTs. Copyright © 2009 John Wiley & Sons, Ltd.     

Preparation of superhydrophobic composite paper mulching film

To study the influence of different concentrations of zinc oxide (ZnO)/silicon dioxide (SiO₂) composite coating on hydrophobic property and mechanical stability of paper mulch film, three kinds of ZnO/SiO₂ composite coating paper mulch films (2%, 4%, 6%) with different coating substance contents were prepared by brush coating method. Through particle size analysis, contact angle, rolling angle and mechanical stability test, combined with scanning electron microscope, three-dimensional morphology and roughness measuring instrument, the optimal concentration of ZnO/SiO₂ composite coated paper mulch film was screened out. Through acid-base salt corrosion test, silver mirror reaction and surface self-cleaning, the optimal concentration of composite coated paper mulch film was compared with the original paper mulch film to prove its excellent chemical stability and hydrophobicity. The results show that the paper mulch film with 4% coating material has excellent hydrophobicity and mechanical stability, can effectively reduce the surface roughness of paper mulch film, and has remarkable effects in resisting acid, alkali and salt and self-cleaning.     

The Application of Nano-SiOx Coatings as Migration Resistance Layer by Plasma Enhanced Chemical Vapor Deposition

Accumulative intake of plasticizers that are generally used to produce flexibility of webs in plastics has been proven to cause reproductive system problems and women??s infertility, and long-term consumption may even cause cancer. Hence a nano-scale layer, named as functional barrier layer, was deposited on the plastic surface to prevent plasticizer diethylhexyl phthalate (DEHP) migration from food-contact materials to foods. The feasibility of a functional barrier layer, i.e. SiO_x coating through plasma enhanced chemical vapor deposition process was then described in this paper. In this research we used Fourier transform infrared spectroscope to analyze the chemical composition of the coatings, scanning electron microscope to explore the topography of the coating surfaces, surface profilemeter to measure coating thickness in plastics, and high-performance liquid chromatography to evaluate the barrier properties of coatings. The results have clearly shown that the coatings can perfectly block the migration of the DEHP from plastics to their containers. It is to be noted that process parameters had a critical influence on the block properties of coatings. When the deposition conditions of SiO_x coatings were optimized, i.e. the discharge power of 50?W, 4:1 of O₂: HMDSO ratio and the thickness of 100?nm, the 71.2?% DEHP was effectively blocked in the plastic film.     

Synthesis of SiO2 thin films by sol-gel method using photoirradiation and molecular structure analysis

The SiO₂ thin films were prepared by a process which combines a sol-gel method and photoirradiation. The HF etch rate and microhardness of a film prepared by this process were better than those of a film furnace-fired at same temperature. The Raman and ²⁹Si solid state NMR spectra of film prepared by this process were similar to those of a film furnace-fired at higher temperature. There are many unstable folded non-linear SiO₂ species in the film prepared at low temperature. On treatment at higher temperature, unstable folded non-linear Si-O-Si rearranges to the stable linear Si-O-Si bond. Photoirradiation enhances this structure change. The process provided denser and harder SiO₂ thin films, even at low temperature, than the conventional furnace-firing method did.     

Silver containing sol–gel derived silica thin films: effect of aluminum incorporation on optical,microstructural and bactericidal properties

Silver containing silica (Ag–SiO₂) thin films with and without aluminum (Al) were prepared on soda-lime-silica glass by spin coating of aqueous sols. The coating sol was formed through mixing tetraethyl orthosilicate [Si(OC₂H₅)₄]/ethanol solution with aqueous silver nitrate (AgNO₃) and aluminum nitrate nonahydrate [(AlNO₃)₃·9H₂O] solutions. The deposited films were calcined in air at 100, 300 and 500 °C for 2 h and characterized using x-ray diffraction, UV-visible and x-ray photoelectron spectroscopy. The effect of Al incorporation and calcination treatment on microstructure and durability of the films, and chemical/physical state of silver in the silica thin film have been reported. The bactericidal activity of the films was also determined against Staphylococcus aureus via disk diffusion assay studies before and after chemical durability tests. The investigations revealed that the optical, bactericidal properties and chemical durability of Ag–SiO₂ films can be improved by Al addition. The Al-modified Ag–SiO₂ thin films do not exhibit any coloring after calcination in the range of 100–500 °C, illustrating that silver is incorporated within the silica gel network in ionic form (Ag⁺). Al incorporation also improved the overall durability and antibacterial endurance of Ag–SiO₂ thin films.     

Inhibition effect of cerium in hybrid sol–gel films on aluminium alloy AA2024

Aluminium alloys such as AA2024 are susceptible to severe corrosion attack in aggressive solutions (e.g. chlorides). Conversion coatings, like chromate, or rare earth conversion coatings are usually applied in order to improve corrosion behaviour of aluminium alloys. Methacrylate‐based hybrid films deposited with sol–gel technique might be an alternative to conversion coatings. Barrier properties, paint adhesion and possibly self‐healing ability are important aspects for replacement of chromate‐based pre‐treatments. This work evaluates the behaviour of cerium as corrosion inhibitor in methacrylate silane‐based hybrid films containing SiO₂ nano‐particles on AA2024. Hybrid films were deposited on aluminium alloy AA2024 by means of dip‐coating technique. Two different types of coating were applied: a non‐inhibited film consisting of two layers (non‐inhibited system) and a similar film doped with cerium nitrate in an intermediate layer (inhibited system). The film thickness was 5 µm for the non‐inhibited system and 8 µm for the inhibited system. Film morphology and composition were investigated by means of GDOES (glow discharge optical emission spectroscopy). Moreover, GDOES qualitative composition profiles were recorded in order to investigate Ce content in the hybrid films as a function of immersion time in 0.05 M NaCl solution. The electrochemical behaviour of the hybrid films was studied in the same electrolyte by means of EIS technique (electrochemical impedance spectroscopy). Electrochemical measurements provide evidence that the inhibited system containing cerium displays recovery of electrochemical properties. This behaviour is not observed for the non‐inhibited coating. GDOES measurements provide evidence that the behaviour of inhibited system can be related to migration of Ce species to the substrate/coating interface. Copyright © 2010 John Wiley & Sons, Ltd.     

A Solution‐Processed Air‐Stable Perylene Diimide Derivative for N‐type Organic Thin Film Transistors

For future all‐soluble organic thin film transistor (OTFT) applications, a new soluble n‐type air‐stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC–PDI–F) is synthesized. The film is formed by spin‐coating in air and optimized for OTFT fabrications. The transistor characteristics and air‐stability of the TC–PDI–F OTFTs is measured to investigate the feasibility of using solution‐processed TC–PDI–F for future OTFT applications. For all‐solution OTFT process applications, the transistor characteristics are demonstrated by using TC–PDI–F as an n‐type semiconductor material and liquid‐phase‐deposited SiO₂ (LPD–SiO₂) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.     

Erratum to: Nanoscale composite materials in the system SiO2–TiO2

Nanoscale composite materials based on the SiO₂–TiO₂ system were prepared in the form of co-precipitated composites and core SiO₂–shell TiO₂ composites, with specific surface area 150–650 m²/g and sorption volumes 0.1–1.0 cm³/g. It is shown that variation of phase composition and morphology permits to change their structural-adsorption properties and nanocrystallites size after thermal treatment. It is discovered that co-precipitated composite materials differ from core SiO₂–shell TiO₂ composites by a component interaction degree. It determines the difference of the titan-containing component crystallization process and alteration of their structural-absorption properties after thermal treatment. The results of the tests of composites as photocatalysts for Rhodamine B decomposition reaction, as catalysts of Hantzsch and Biginelli reaction, and as fillers in electrorheological fluids are shown.