The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band Λ₃ and the conduction band Λ₁ (the E ₁ and E ₁ + Δ₁ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of ≈10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E ₁ and E ₁ + Δ₁ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^?1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer for which the size dispersion of quantum dots is minimum is determined.     

Quasi-direct optical transitions in Ge nanocrystals embedded in GeO<Subscript>2</Subscript> matrix

GeO₂ films with germanium nanocrystals (NCs) were deposited from supersaturated GeO vapor with subsequent dissociation on Ge:GeO₂. The films were studied using photoluminescence (PL), Raman scattering, IRspectroscopy techniques. Ge NCs in initial film have sizes about 6–8 nm and have no visible PL signal. The broad green-red PL peak was detected in Ge:GeO₂ films after thermal annealings. According to effective mass approach, maximum of PL signal from such relatively big Ge NCs should be in IR region. The experimentally observed PL signal is presumably originated due to quasi-direct L ₁-L ₃’ optical transitions “folded” in germanium NCs. The article is published in the original.     

Two-dimensional photonic crystals with pure germanium-on-insulator

We have investigated pure germanium two-dimensional photonic crystals. The photonic crystals which exhibit resonances in the near infrared spectral range were fabricated on germanium-on-insulator substrates using standard silicon-based processing. The germanium-on-insulator substrate consists of a thin layer of pure germanium-on-oxide deposited on a silicon substrate. The optical properties are probed by the direct band gap optical recombination of pure germanium at room temperature. Resonant optical modes are evidenced between 1.68 and 1.53 μm in different type of hexagonal cavities (H1-H5). The spectral position of the modes is controlled by the lattice periodicity and air filling factor of the photonic crystals. Close to the Ge band edge, the quality factors are limited by the bulk material absorption.     

Er<Superscript>3+</Superscript> as glass structure modifier of Ga–Ge–S chalcogenide system

Er³⁺ clustering phenomenon in Ga–Ge–S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm⁻¹ for glasses (100−y)[15Ga₂S₃–85GeS₂]–yEr₂S₃ (y=0.08−5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge–Ge (Ga–Ga) homopolar bonds has been examined. The peak intensity increase with Er₂S₃ concentration change in the region 0<C(Er₂S₃)<2 mol. % has been interpreted in terms of the sulphur deficiency in the glass resulting in the formation of S₃Ge–GeS₃ (S₃Ga-GaS₃) structural units. The further increase in concentration beyond 2 mol. % reduces the sulphur deficiency, which can be attributed to the formation of the ternary compound Er₃GaS₆. The structural units Er₃GaS₆ contain a large mol. fraction of Er³⁺ or, in other words, Er³⁺ clusters. The data obtained from the low-frequency Raman spectra (boson band) indicate strong variations of the medium-range order (MRO) in the glasses induced by Er³⁺. The observed behavior of the MRO size (the correlation length) with increasing of Er₂S₃ concentration provides for additional evidence of the Er³⁺ clustering.     

The effect of pulsed magnetic fields on Cz-Si crystals

It has been established that short-term effects of pulsed magnetic fields initiate long-term low-temperature decay of a supersaturated solid solution of oxygen in silicon crystals grown by the Czochralski method (Cz-Si), which results in the generation of oxygen-containing defects in the form of O-V centers and more complicated Si_xO_yV_z complexes, where V is a vacancy. The process of defect formation after the action of the pulsed magnetic fields culminates in the formation of spatially ordered oxygen-vacancy clusters and/or the precipitation of oxide phases, depending on the original defects present in the crystal. The action of such fields also initiates crystallization of an amorphized layer when it is present on the surface of the original crystal. The detected effects are characterized by a threshold field strength, are accumulate with successive pulses, and reach saturation in terms of these parameters of the action. The effects induced in Cz-Si crystals by pulsed magnetic fields are analyzed in terms of a possible cause consisting of the excitation of the Si-O bond of an interstitial oxygen by nonequilibrium population of the vibrational levels of a metastable electronic term of the bond. Zh. éksp. Teor. Fiz. 111, 1373–1397 (April 1997)     

Microplasma generated at solid–solid interface and its application to nanostructure formation

The dynamics of the microplasmas created at a transparent solid–solid interface were investigated extensively. Microplasmas were generated at an interface between a carbon (C) or a germanium (Ge) target and a SiO₂ substrate by irradiating a KrF excimer laser beam onto the target, and the dynamics of the plasmas were investigated with the aid of optical emission spectroscopy. Although the emission spectra that contained the characteristic emission lines and the absorption bands originated from C and Ge species were observed from the C and Ge plasmas without the SiO₂ substrate, identical spectra were obtained from both the plasmas created at the C–SiO₂ and Ge–SiO₂ interfaces. Furthermore, the target and the Si substrate surfaces were examined with a scanning electron microscope. The SiO₂ substrate was smoothly etched and a nanostructure of a chain-like morphology was also observed in the deposits on the SiO₂ substrate.     

XPS study of the chemical bonding in hydrogenated amorphous germanium–carbon alloys

A systematic study of the chemical bonding in hydrogenated amorphous germanium–carbon (a-Ge_1-xC_x:H)alloys using X-ray photoelectron spectroscopy (XPS) is presented. The films, with carbon content ranging from 0 at. % to 100 at. %, were prepared by the rf co-sputtering technique. Raman spectroscopy was used to investigate the carbon hybridization. Rutherford backscattering spectroscopy (RBS) and XPS were used to determine the film stoichiometry. The Ge 3d and C 1s core levels were used for investigating the bonding properties of germanium and carbon atoms, respectively. The relative concentrations of C–Ge, C–C, and C–H bonds were calculated using the intensities of the chemically shifted C 1s components. It was observed that the carbon atoms enter the germanium network with different hybridization, which depends on the carbon concentration. For concentrations lower than 20 at. %, the carbon atoms are preferentially sp³ hybridized, and approximately randomly distributed. As the carbon content increases the concentration of sp² sites also increases and the films are more graphitic-like. Received: 4 May 1999 / Accepted: 24 November 1999 / Published online: 24 March 2000     

Microstructural,chemical bonding,stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide

We have grown Ge nanocrystals (NCs) (4.0–9.0 nm in diameter) embedded in high-k HfO₂ matrix for applications in floating gate memory devices. X-ray photoelectron spectroscopy has been used to probe the local chemical bonding of Ge NCs. The analysis of Ge–Ge phonon vibration using Raman spectroscopy has shown the formation of compressively stressed Ge NCs in HfO₂ matrix. Frequency dependent electrical properties of HfO₂/Ge-NCs in HfO₂/HfO₂ sandwich structures have been studied. An anticlockwise hysteresis in the capacitance–voltage characteristics suggests electron injection and trapping in embedded Ge NCs. The role of interface states and deep traps in the devices has been thoroughly examined and has been shown to be negligible on the overall device performance.     

Effect of isotopic disorder on the thermal conductivity of germanium in the region of the maximum

This paper discusses the question of how isotopic disorder affects the position of the thermal-conductivity maximum of germanium. The discussion is in terms of a Callaway-type model. Experimental data on the thermal conductivity of a natural Ge crystal and of highly enriched Ge⁷⁰ crystals are analyzed. Fiz. Tverd. Tela (St. Petersburg) 41, 1185–1189 (July 1999)     

Isotope effect for the thermal expansion coefficient of germanium

The first experimental and theoretical investigation of the difference in the temperature behavior of the linear expansion coefficients of single crystals grown from isotopically highly enriched and natural germanium is reported. A comparison of the data for ⁷⁰Ge and ^natGe crystals reveals the significant influence of isotopic composition over a wide range of temperatures 30–230 K. Zh. éksp. Teor. Fiz. 115, 243–248 (January 1999)     

Influence of post-grown Li-rich and Li-poor vapor transport equilibration on composition, OH− absorption and optical-damage threshold of Mg (5 mol%) : LiNbO3 crystals

Li-rich (Li-poor) vapor transport equilibration (VTE) treatments on a number of Z-cut 0.47 mm thick congruent MgO (5 mol% in melt) : LiNbO₃ crystals were carried out at 1100°C over different durations ranging in 1–172 (40–395) h. Neutron activation analysis shows that neither Li-rich nor Li-poor VTE-induced Mg and Nb loss from the crystal occurred. The Li₂O content in the crystal was measured as a function of VTE duration by the gravimetric method. The Li-rich/Li-poor VTE effects on OH⁻ absorption were studied in comparison with the as-grown crystal. The study shows that the Li-rich VTE results in OH⁻ absorption band annihilation. After further oxidation treatment the band reemerges and peaks at the same wavenumber as that of the as-grown crystal (∼3535.6 cm⁻¹), showing that the MgO concentration in the Li-rich VTE crystal is still above the optical-damage threshold. The Li-poor VTE causes OH⁻ band shift to 3486.3–3491.6 cm⁻¹, indicating that the MgO concentration in all Li-poor VTE crystals is all below the optical-damage threshold. Further successive Li-rich VTE and oxidation treatments on the Li-poor VTE-treated crystal lead the band to shift back to 3535.6 cm⁻¹, showing that the post Li-rich VTE brought the Li-poor VTE-treated crystal above the optical-damage threshold again. It is found that the peaking position, band width, peaking absorption and band area of the absorption at ∼3486 cm⁻¹ all increase monotonously with the decrease of the Li₂O content arising from prolonged Li-poor VTE, and quantitative relationships to the Li₂O content are established for the latter two parameters. The VTE effects on the OH⁻ absorption are conducted with the VTE-induced OH⁻ content alteration and charge redistribution.     

Formation of Ge clusters at a Si(111)-Bi-$\sqrt 3 \times \sqrt 3$ surface

The possibility of the formation of a dense array of size-uniform Ge clusters on the Si(111) surface in the presence of the Bi surfactant has been demonstrated using scanning tunneling microscopy. It has been shown that the deposition of germanium at room temperature leads to the formation of two types of clusters. Clusters containing two to four atoms are one monolayer thick and are mobile on the Bi layer. The second type, bilayer clusters, containing eight to ten atoms, transform into epitaxial islands after annealing at 400–500°C. Models of possible atomic structures of bilayer clusters have been considered taking into account their positions relative to Bi trimers. It has been found that the probability of the substitution of Si atoms for Ge atoms during cluster formation does not exceed 20%.     

Surface acoustic phonon modes of Ge nanocrystals embedded in SiO2

Ge nanocrystals (NCs) embedded in SiO₂ are synthesized by ion implantation, and the surface vibrational modes of the Ge NCs are investigated using the low-frequency Raman scattering (LFRS) technique. LFRS studies show distinct low-frequency Raman modes in the range 6.5-21.2 cm⁻¹ for the Ge NCs depending on the implant dose and annealing temperature. These low-frequency Raman modes are attributed to the confined surface acoustic phonon modes of Ge NCs with (0,0) spheroidal mode and (0,3) torsional modes. Our results are in excellent agreement with the recent theoretical predictions of surface vibrational modes in Ge NCs.     

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

Multilayered Ge nanocrystals embedded in SiO_xGeN_y films have been fabricated on Si substrate by a (Ge + SiO₂)/SiO_xGeN_y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO₂ composite target and subsequent thermal annealing in N₂ ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO₂) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the ‘Z’ growth direction.     

Confined Ge–Pt states in self-organized Pt nanowire arrays on Ge(001)

By means of band structure calculations within the density functional theory and the generalized gradient approximation, we investigate the electronic structure of self-organized Pt nanowires on the Ge(001) surface. In particular, we deal with a novel one-dimensional surface state confined in the nanowire array and clarify its origin. Due to large Pt contributions, the novel state is rather a mixed Ge–Pt hybrid state than a confined Ge surface state. Moreover, we compare our results to data from scanning tunneling microscopy.     

Structural characterization of Lu0.7Y0.3AlO3 single crystal by Raman spectroscopy

Lutetium yttrium orthoaluminate perovskite [Lu_0.7Y_0.3AlO₃ (LuYAP)] crystals show great potential as fast response and high‐efficiency scintillators as an alternative to LuAlO₃ (LuAP) crystals. This paper aims to offer a complete analysis of the vibrational modes of the LuYAP crystal by means of polarized Raman spectroscopy in the temperature range of 20–290 K and confronting the experimental results with numerical methods in order to characterize the crystal structure. Furthermore, an interpretation of the data in terms of vibrating molecular structures is suggested and the results are successfully confronted with the vibrational modes of similar perovskite crystals. Copyright © 2009 John Wiley & Sons, Ltd.     

循环氧化/退火制备GeOI薄膜材料及其性质研究

采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si_0.82Ge_0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11 nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540 nm,发光 关键词： GeOI 氧化 退火 光致发光谱     

Vibrational spectra and crystal lattice dynamics of hexahydrates of zinc potassium and ammonium sulfates

The IR spectra and polarized Raman spectra of crystals of hexahydrates of zinc potassium and ammonium sulfates have been obtained experimentally at 93 K and at room temperature. The frequencies and modes of normal vibrations of the octahedral complex [Zn(H₂O)₆]²⁺ have been calculated. The assignment of the observed lines of the internal and external vibrations of the crystal cell has been made by calculations and by factor-group analysis. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 162–168, March–April, 2000.     

Isotope effect in the thermal conductivity of germanium single crystals

The thermal conductivity of chemically, structurally, and isotopically highly pure germanium single crystals is investigated experimentally in the temperature range from 2 to 300 K. It is found that the thermal conductivity of germanium enriched to 99.99% ⁷⁰Ge is 8 times higher at the maximum than the thermal conductivity of germanium with the natural isotopic composition. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 6, 463–467 (25 March 1996)     

Magnetic and band parameters of (3HgS)1–x(Al2S3)x (x = 0.5) crystals doped with manganese

Investigations of magnetic susceptibility (χ) of (3HgS)_1–x (Al₂S₃) _x (x = 0.5) crystals doped with manganese investigated by the Faraday method in the range of Т = 77–300 K and Н = 0.25–4 kOe demonstrate that peculiar magnetic properties can be due to the presence of clusters of the Mn–S–Mn–S type in these crystals. Based on the investigation of kinetic coefficients of the crystals performed for Т = 77–300 K and Н = 0.5–5 kOe, it is established that the crystals demonstrate conductivity of the n-type, and their electric conduction only very slightly depends on the temperature and shows a maximum, the Hall coefficient is independent of the temperature, while the temperature dependences of mobility exhibit a maximum. Using the concentration dependence of the effective electron mass at the Fermi level, the width of the forbidden band, the matrix element of interatomic interaction, and the effective mass on the conduction-band bottom are obtained. Based on investigations by optical methods, the presence of direct optical interband transitions in the crystals is established and the value of the optical forbidden band (at Т = 300 K) is determined.