有ITO透明导电膜的平面分层介质系统的电磁波性能理论研究

理论研究了有ITO(indium tin oxide)透明导电膜的多层平面分层介质系统的电磁性能，给出的理论曲线和实测曲线符合很好.多层平面分层介质系统的电磁性能与ITO膜(方块电阻为8Ω)所在界面位置和平面分层介质系统层数及各层厚度等有关.优化设计了一种含有ITO透明导电膜的厚度仅7.35mm的四层平面分层介质系统，其在8—18GHz频段内电磁波反射性能很好.作为多层平面分层系统中的ITO导电膜，其方块电阻应低于30Ω，并且越小，其反射性能越好. 关键词： 多层平面介质系统 电磁性能 ITO透明导电膜     

高阻紫外光阴极导电基底制备及性能

在MgF_2基片上,采用电子束蒸发镀膜法制备了掺锡氧化铟(ITO)导电基底,研究了充氧及退火对ITO薄膜电阻及紫外透射比的影响。并与传统的金属导电基底Au和Cr进行了性能比较。用光学显微镜、四探针测试仪、高阻计、X射线衍射仪(XRD)和分光光度计分别测试了薄膜的表面形貌、方块电阻、形态结构和190～800 nm波段范围内薄膜的透射比曲线,得到方块电阻为10~7Ω左右时薄膜在200～400 nm波段内透射比的变化范围。实验结果表明,厚度相同时,充氧会增大ITO薄膜电阻;退火则会降低薄膜电阻并提高紫外透射比,薄膜结构由非晶态变为多晶态。方块电阻同为10~7Ω时,在200～400 nm波段充氧退火后ITO薄膜的平均透射比比Au,Cr的高10%。     

薄膜光学 制膜技术与装置

O484.12006010529低压反应离子镀方法制备ITO透明导电膜=Preparationof ITOfil ms by reactive lowvoltageion plating[刊,中]/徐颖(中科院长春光机所光学技术研究中心.吉林,长春(130022)),高劲松…∥光学技术.—2005,31(5).—669-671使用一种不同于溅射方法的另一种制备工艺—低压反应离子镀方法制备ITO透明导电膜。实验对不同沉积速率和不同氧气流量对ITO透明导电膜的方块电阻以及光学透过率的影响进行了详细的分析,并综合比较得到了当沉积速率为0.5nm/s,氧气流量为24cm3/min时,在波长为550nm处,方块电阻为20Ω,λ=550nm,透过率为90…     

1 064 nm激光对氧化铟锡薄膜的损伤研究

 液晶光学器件在激光光束精密控制上具有重要应用前景,氧化铟锡（ITO）薄膜作为液晶光学器件的透明导电电极,是液晶器件激光损伤的薄弱环节。为此,建立了ITO薄膜激光热损伤物理模型。理论计算结果表明：1 064 nm激光对ITO薄膜的损伤主要为热应力损伤;连续激光辐照下,薄膜损伤始于靠近界面的玻璃基底内;脉冲激光辐照下,温升主要发生在光斑范围内的膜层,薄膜损伤从表面开始。利用泵浦探测技术,研究了ITO薄膜的损伤情况,测量了不同功率密度激光辐照后薄膜的方块电阻,结合1-on-1法测定了ITO薄膜的50%损伤几率阈值。实验结果表明：薄膜越厚,方块电阻越小,激光损伤阈值越低;薄膜未完全损伤前,方块电阻随激光功率密度的增加而增大。理论计算与实验结果吻合较好。设计液晶光学器件中的ITO薄膜电极厚度时,应综合考虑激光损伤、透光率及薄膜电阻的影响。     

红外低发射率隐身涂层对太赫兹波的反射光谱研究

为研究红外低发射率隐身涂层对太赫兹波的反射特性,制备了红外低发射率隐身涂料,测试了其可见光效果、红外热像图及红外发射率等特性参数。以土黄色红外低发射率涂料为测试样品,利用透射式太赫兹时域光谱系统获得了样品在太赫兹波段的复折射率。分析了特征矩阵理论,并利用特征矩阵理论计算了涂层厚度(0.3~0.5 mm）与入射角度(0°~60°)的变化对入射太赫兹波反射特性的影响。结果表明,在相应厚度及入射角度范围内,太赫兹波在0.8 THz频率下具有多个反射峰值,最高值可达90%以上,有利于实现太赫兹波对红外低发射率隐身涂层下金属目标的探测。此外,涂层厚度变化对入射太赫兹波反射率具有较大影响,涂层越厚,太赫兹波的反射振荡越多,反射峰值越大。入射角度对太赫兹波的反射特性具有一定的影响,但整体影响不大,有利于太赫兹波实现多角度目标的探测。最后,以表面均匀涂覆0.42 mm厚涂料的金属板为测试样品,实验测量了样品在0.1~1.5 THz频率范围内的反射特性,并与部分理论计算结果进行对比。结果表明：实验测量结果与理论计算结果在数值和趋势上较为吻合,但也存在一定的偏差。究其原因,主要由样品厚度和样品参数误差导致,但依然可利用特征矩阵理论研究红外低发射率涂层对太赫兹波的反射光谱特性。     

低压反应离子镀方法制备ITO透明导电膜

溅射镀膜方法是制备ITO透明导电膜最常用也是实验研究最多的方法。实验使用一种不同于溅射方法的另一种制备工艺—低压反应离子镀方法—制备ITO透明导电膜。实验对不同沉积速率和不同氧气流量对ITO透明导电膜的方块电阻以及光学透过率的影响进行了详细地分析,并综合比较得到了当沉积速率为0.5nm/s,氧气流量为24cm3/min时,在波长为550nm处,方块电阻为20Ω,λ=550nm透过率为90.8%的优质ITO透明导电膜。     

ITO材料在减反射膜设计中的应用

改变ITO材料通常作为透明导电膜单独使用的状况,将其作为减反射膜系中的一层,能够在很大程度上增加ITO透明导电膜在可见光部分的透过率.通过使用将ITO材料置于膜系的内层和最外层两类不同的设计思想,可以使ITO透明导电膜达到相当优良的应用效果.使用低压反应离子镀方法制备了设计的两类减反射膜系,实验证明,膜层在可见光部分的透过率显著提高,剩余反射率明显下降,并得到了平均透过率为95.83%,最高透过率达到97.26%,方块电阻为13.2～24.6Ω/□的试验结果.     

光子晶体红外隐身薄膜在车辆引擎舱表面应用研究

为了研究实际应用场景下光子晶体薄膜的红外隐身效果,选择具有中、远红外隐身性能的光子晶体薄膜和低发射率薄膜,以某吉普车的引擎舱为研究对象,分析了贴附薄膜后目标的自身辐射和反射环境的辐射对隐身效果的影响.设计并制备了一种具有中、远红外隐身效果的光子晶体薄膜,分别于白天和晚上在室外进行实验,测试了光子晶体薄膜以及低发射率薄膜...     

8～14μm波长低红外发射率涂料的研究

研究了红外隐身涂料粘合剂的物理和化学性能,以及红外隐身涂料粘合剂、填料、颜料颗粒的红外发射率。通过研究发现,铝粉和氧化铅具有较低的发射率,并得到了以有机硅清漆和EPDM(三元乙丙橡胶)接枝聚合物为基体的低红外发射率涂料,它有助于对红外隐身涂料粘合剂、填料、颜料颗粒的选择。     

用于彩色滤光片的低阻低应力ITO透明导电膜

探讨了用于彩色滤光片的低电阻和低压应力的ITO透明导电膜工艺。用磁控溅射方法在不同温度的衬底上制备了ITO薄膜。研究了膜形衬底温度与膜结晶化程度的关系,以及膜形衬底温度对膜电阻和压应力的影响。对不同衬底温度下形成的ITO薄膜进行了退火处理,并对退火后的ITO薄膜的电阻和压应力特性进行了分析。结果表明,采用室温沉积非晶态ITO膜,在真空退火下可获得低电阻、低压应力的多晶相ITO膜。     

Application of indium tin oxide (ITO) thin film as a low emissivity film on Ni-based alloy at high temperature

Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600–900 °C for 150 h to explore the effect of high temperature environment on the emissivity. The samples were analyzed by X-ray diffraction (XRD), SEM and EDS. The results show that the surface of sample is integrity after heat processing at 700 °C and below it. A small amount of fine crack is observed on the surface of sample heated at 800 °C and Ti oxide appears. There are lots of fine cracks on the sample annealed at 900 °C and a large number of various oxides are detected. The average infrared emissivities at 3–5 μm and 8–14 μm wavebands were tested by an infrared emissivity measurement instrument. The results show the emissivity of the sample after annealed at 600 and 700 °C is still kept at a low value as the sample before annealed. The ITO film can be used as a low emissivity coating of super alloy K424 up to 700 °C.     

A thin radar-infrared stealth-compatible structure:Design,fabrication,and characterization

A thin radar-infrared stealth-compatible structure with reflectivity below -10 dB in the whole radar X wave band and infrared emissivity less than 0.3 in the infrared region of 8μm-14 μm is reported. The designed stealth-compatible structure consists of metallic frequency selective surface （MFSS）, resistive frequency selective surface （RFSS）, and metal backing from the top down, and it is only 2. l-mm thick. The MFSS is made up of some divided low infrared emissivity metal copper films, and the RFSS consists of a capacitive array of square resistive patches. They are placed close together, working as an admittance sheet because of a mutual influence between them, and the equivalent admittance sheet greatly reduces the thickness of the whole structure. The proposed stealth-compatible structure is verified both by simulations and by experimental results. These results indicate that our proposed stealth-compatible structure has potential applications in stealth fields.     

Effect of the heat treatment on the infrared emissivity of indium tin oxide (ITO) films

Indium tin oxide (ITO) films were deposited on glass substrates at temperatures ranging from 100 °C to 400 °C by direct current magnetron sputtering. The mean infrared emissivities at the waveband of 8-14 μm were measured in process of heating and cooling between room temperature and 350 °C. Microstructure and phases of ITO films before (Group A) and after (Group B) heat treatment were characterized by SEM and XRD, respectively. Electrical properties were characterized with a four-point probe method and by Hall measurement system. During heat treatment, the infrared emissivity of the film increases with the increase of temperature, and decreases with the decrease of temperature. While, the infrared emissivity of the films decreases slightly around 250 °C in heating process. On the other hand, after heat treatment, the crystalline phases of the films have no obvious change. However, both the resistivity and the infrared emissivity of all films decrease.     

目标表面发射率对红外热像仪测温精度的影响

介绍了红外热像仪测温原理,分析了影响红外热像仪测温精度的因素,计算了不同表面发射率下红外热像仪的测温误差曲线。理论分析表明,目标表面发射率越高,红外热像仪测温精度越高。实验改变表面发射率的设置,计算了不同表面发射率对应的总辐射亮度,得到TP8型长波红外热像仪能够精确测温时,目标表面发射率必须大于0.5的结果。最后,对表面发射率分别为0.96、0.93和0.3的3种材料进行实际测温,结果表明,材料表面发射率较高时,红外热像仪具有较好的测温精度。     

Patterning of nanoparticulate transparent conductive ITO films using UV light irradiation and UV laser beam writing

Indium tin oxide (ITO) thin film is one of the most widely used as transparent conductive electrodes in all forms of flat panel display (FPD) and microelectronic devices. Suspension of already crystalline conductive ITO nanoparticles fully dispersed in alcohol was spun, after modifying with coupling agent, on glass substrates. The low cost, simple and versatile traditional photolithography process without complication of the photoresist layer was used for patterning ITO films. Using of UV light irradiation through mask and direct UV laser beam writing resulted in an accurate linear, sharp edge and very smooth patterns. Irradiated ITO film showed a high transparency (∼85%) in the visible region. The electrical sheet resistance decrease with increasing time of exposure to UV light and UV laser. Only 5 min UV light irradiation is enough to decrease the electrical sheet resistance down to 5 kΩ□.     

目标表面发射率对红外热像仪测温精度的影响

介绍了红外热像仪测温原理,分析了影响红外热像仪测温精度的因素,计算了不同表面发射率下红外热像仪的测温误差曲线。理论分析表明,目标表面发射率越高,红外热像仪测温精度越高。实验改变表面发射率的设置,计算了不同表面发射率对应的总辐射亮度,得到TP8型长波红外热像仪能够精确测温时,目标表面发射率必须大于0.5的结果。最后,对表面发射率分别为0.96、0.93和0.3的3种材料进行实际测温,结果表明,材料表面发射率较高时,红外热像仪具有较好的测温精度。