A new method for fabricating water repellent silica films having high heat-resistance using the sol–gel method

There has been a great demand in the field of kitchen appliances to develop transparent water repellent films which have high heat-resistance around 300°C. However, those films have not been obtained by conventional sol–gel methods. In this paper, we propose a new method for fabricating transparent water repellent films with high heat-resistance using the sol–gel method, in which silicon or germanium substrates were coated with a solution including tetraethoxysilane (Si(OC₂H₅)₄) and (2-perfluorooctyl)ethyltrimethoxysilane (CF₃(CF₂)₇C₂H₄Si(OCH₃)₃), followed by ‘ammonia-treatment' and annealed at 300°C. The contact angles of water on the ammonia-treated film maintained its initial value, 110° after the heat treatment at 300°C for 250 h while those on the untreated film decreased to 70°, indicating that the ammonia-treatment improves heat-resistance on the film. The mechanism of ammonia-treatment was inferred from FT-IR results; the ammonia-treatment should accelerate hydrolysis and polymerization of FAS and TEOS molecules, resulting in high density of siloxane bonds between FAS and silica glass. These bonds suppress the evaporation of FAS molecules from the film during the heat treatment at 300°C, thus the film has high heat-resistance.     

Oscillator strength of the infrared absorption band near 1080 cm in SiO2 films

It has been well known that the absorption maximum of the peak near 1080 cm⁻¹ in amorphous SiO₂ films shifts continuously with variation of thickness and properties such as stress. This is a first report on the oscillator strength of the absorption against frequency at the absorption maximum. SiO₂ films on silicon wafers were prepared by thermal growth in either dry O₂ or an O₂/H₂ mixture or liquid-phase deposition in HF saturated with silica gel. The oscillator strength continuously decreased from 1×10⁻⁴ down to 1×10⁻⁵ with the frequency shift from 1099 to 1063 cm⁻¹.     

Hydrogenated amorphous silicon with substrate-dependent structure

Hydrogenated amorphous silicon (a-Si:H) thin films grown at 250°C on (1 0 0) crystalline substrate using plasma-enhanced chemical vapor deposition (PECVD) with SiH₄/H₂ gas flow ratio equal to 5/1 (sccm) are investigated by transmission electron microscopy. It is found that the thin film is totally amorphous when grown on a glass substrate. But when the substrate is changed to crystalline silicon, some crystalline grains are found embedded in the amorphous structure in certain regions even if the thickness of the film reaches 600 nm. It is suggested that the amorphous silicon film grown on a crystalline silicon substrate at a temperature of 250°C without heavy H₂ dilution is a mixed network of a small amount of crystalline silicon and the major portion of amorphous silicon.     

As2S3 and AgI thin layers as ion sensitive membranes

The possibilities of using thin layers of As₂S₃ and AgI as ion sensitive membranes for ion selective field-effect transistors (ISFETs) are investigated. The thin films have been prepared by vacuum deposition on static and rotating substrates. The As₂S₃ layers were additionally doped with silver. The influence of the type of substrates and preparation conditions on electrochemical properties of the layers was studied. Electrochemical measurements revealed a reasonable sensitivity of chalcogenide and halide layers to silver and iodide ions, respectively. The near Nernstian behavior of sensitivity of As₂S₃ layers to Ag⁺ ions and of AgI layers to I⁻ ions is observed. The results obtained are promising for the development of ISFETs.     

Surface removal of a weathered organic glass

A tubular, stratified glass–epoxy material composite has been subjected to either natural or artificial aging. After aging, the degradation of this material is characterised by the ablation of the organic matrix. For the first time, we have measured the ablation using a three-dimensional surface microanalysis system equipped with a sensitive topographical probe. In a previous study involving the measurement of the ablation during artificial photo-aging, an innovative hypothesis concerning the creation of a thin photo-oxidation layer in close proximity to the irradiated surface of the organic matrix was proposed. During weathering, from time to time, rain leaches the thin photo-oxidation layer and causes a significant ablation via a complementary mechanism. Given that the material surface always presents hemi-cylindrical concavity imprints, we studied the surface changes, due to the ablation, by measuring the cross-section half-circle radii of the concavities after different photo-aging times. The surface erosion is characterized by growth of the circle radii, whose changes progressively lead towards surface flatness. A 2-D model of the concavities’ growth has been validated: the simulation results lead to calculated circle radii growth values near the measured ones. Comparison between photo-aged organic matrix removal and erosion of a leached mineral glass shows that the morphological removal of this isotropic organic matrix evolves in a manner analogous to that of an amorphous inorganic material.     

Boron-doped a-SiOx:H films prepared by photo-CVD technique

The optoelectronic and structural properties of p-type a-SiO_x:H films have been studied. The deposition parameters e.g. chamber pressure and diborane to silane ratio are optimized to get a film with dark conductivity (σ_d) 7.9×10⁻⁶ S cm⁻¹ and photoconductivity 9.3×10⁻⁶ S cm⁻¹ for an optical gap (E₀₄) of 1.94 eV. The decrease of optical gap accompanied by the increase of conductivity is due to less oxygen incorporation in the film, which is substantiated by the decrease of the intensity of SiO absorption spectra. The properties are very much effected by the chamber pressure and diborane to silane ratio.     

Third-order elastic constants determination in soda–lime–silica glass by Brillouin scattering

Brillouin light scattering allows the measurement of sound velocity and elastic moduli in transparent materials. The ability to select a small scattering volume and to use specific scattering configurations gives important information about the gradient and anisotropy of mechanical properties. Brillouin experiments are often used to measure the second-order elastic constants. When a high accuracy in frequency measurements is achieved, Brillouin scattering may allow the determination of third-order elastic constants in pre-stressed media. Hence, Brillouin scattering provides in principle, a method for the analysis of stress fields in tempered glasses. In order to validate the technique, samples of float soda-lime–silica glass submitted to controlled stresses by four-point flexion were investigated. The results show the expected profile for the velocity of sound waves propagating in directions parallel and perpendicular to the surface of the samples, respectively. They allow the determination of several third-order elastic constants of the investigated glass. This technique was applied to several samples of tempered glass corresponding to different values of the surface stress. The main result is the observation of the expected general trend, namely, through the thickness of the sample, a parabolic variation of the sound velocity whose amplitude increases with the magnitude of the surface stress.     

Homogeneity of a ZrF4-based glass at the nano-scale

A glass of composition 53ZrF₄–20BaF₂–4LaF₃–3AlF₃–20NaF (T_g=260°C) was prepared by careful crucible melting. High-resolution atomic force microscopy of fracture surfaces displayed the presence of nano-pores with diameters of 20–50 nm, being 4–10 nm deep, in all glasses. It was further found that only glasses without annealing and glasses with an annealing step considerably below T_g showed a distinct pattern, i.e. ripples of ≈20 nm in diameter and an rms roughness of ≈0.6 nm. Glasses annealed either near T_g or at the temperatures of maximum nucleation or maximum crystal growth rates showed both regions with the ripple pattern and regions with nano-hillocks, growing in size with increasing annealing temperature and time. Thus these hillocks nearly reach micro-dimensions of ≈270 nm in diameter and ≈65 nm in height following a 90 min annealing step at 343°C, the temperature of maximum crystal growth. These findings give evidence that the glass system, which is thought to be one of the most suitable for fiber drawing, is much less stable against nucleation and crystallization than anticipated.     

Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

Hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon-oxide alloy films (a-SiO_x:H) were investigated by temperature dependence of lateral photovoltage (LPV) measurements. The suboxide sample with [O] = 27 at.%, was found to exhibit larger LPV compared to the unalloyed sample. It is difficult to simply correlate LPV measurements to related diffusion length measurements, only. On the other hand, the observed magnitude of LPV in a-Si:H and its decrease with temperature, could be explained based on an internal electric field induced by diffusion electron and hole currents, and multiple trapping of the photocarriers.     

Ionic transport crossover in mixed conducting chalcogenide glasses detected by Te-Mössbauer spectroscopy

¹²⁵Te-Mössbauer spectroscopy has been used to verify whether the observed ionic transport crossover for the Ag–As–Se–Te glasses with a silver content of 15 at.% at approximately equimolar Se/Te ratio is accompanied by variations in the hyperfine interaction parameters produced by corresponding changes in the microstructural organization of the glass network. We found that an unusual decrease of the quadrupole splitting with decreasing tellurium fraction, r=Te/(Se+Te)<0.5, is caused by the combined effect of increasing Te–Ag(As) interatomic distances and a non-random substitution of multiple Se sites by Te with a preferential occupation of those with at least one Ag nearest neighbour. The latter process leads also to a step-like decrease in the isomer shift at r0.35. The assumed expansion of the glass network at smaller r and the contrasting network contraction for the Te-rich glasses are consistent with the ionic transport crossover.     

Anomalous temperature dependence of sub-critical crack growth in silica glass

The effects of temperature, water vapor, and stress on the rate of sub-critical crack growth (SCG) in fused silica are reported. The crack velocity was measured using the double-cleavage-drilled compression method. In contrast to other inorganic oxide glasses, crack growth velocities (in region I) were found to decrease with increase in temperature. Hence a small temperature rise has the apparent effect of improving the mechanical strength of a stressed-glass part. Despite the anomalous temperature dependence, SCG in fused silica is still likely governed by the established water-enhanced stress-corrosion mechanism; another competing phenomenon is proposed to cause the observed temperature dependence. Measured crack velocities are described using an empirical model (for region I) and a mass-transport model limited by Knudsen diffusion (for region II).     

Molecular dynamics studies of brittle fracture in vitreous silica: Review and recent progress

The dynamics of brittle fracture in vitreous silica has been a subject of many molecular dynamics (MD) simulations and experiments. A striking similarity between both simulations and experiments is the observation of nanoscale voids that eventually coalesce leading to failure. In this work, we review the above MD simulations and carry out further MD investigations using two variations of classical 2-body potentials. We study the effect of charge-transfer, an important aspect neglected by previous simulations. Further, we examine the growth of ‘critical’ voids and characterize regions surrounding the voids.     

The structural transformation and properties of spin-on poly(silsesquioxane) films by thermal curing

In this study, the structural transformation and properties of five commercially available poly(silsesquioxanes) by thermal curing were investigated, including poly(hydrogen silsesquioxanes) (HSQ and T12), and poly(methylsilsesquioxanes) (MSQ, T7 and T9). These materials with a different cage/network ratio and side groups (Si-H and Si-CH₃). The FTIR spectra show that the poly(silsesquioxane) films have different contents of the Si-O-Si cage and network structures, which significantly affects the refractive index and dielectric constant. The shifting of the Si-O-Si network band in the FTIR spectra can be correlated with their molecular structures. The refractive indices and dielectric constants of the studied poly(silsesquioxane) films increase with increasing the Si-O-Si network content. The retention of the Si-H or Si-CH₃ side group suggests the existence of the cage structures in the poly(silsesquioxane) films. The Si-O-Si cage structure results in a larger free volume than the Si-O-Si network structure in the poly(silsesquioxane) films and thus reduces the refractive index and dielectric constant. It is supported by the porosity result. The order of the refractive index in the studied poly(silsesquioxanes) films is T12>HSQ for the Si-H side group and T7>T9>MSQ with the Si-CH₃ side group, which can be correlated with the Si-O-Si network content. The poly(silsesquioxane) film with the Si-CH₃ side group has a lower refractive index than the Si-H side group at the same Si-O-Si network content, which is probably due to the steric hindrance effect of the CH₃ group.     

The glass transition of Pd40Ni10Cu30P20 studied by temperature-modulated calorimetry

The frequency dependence of the heat capacity in the glass-transition region of Pd₄₀Ni₁₀Cu₃₀P₂₀ was studied by temperature-modulated differential scanning calorimetry (TMDSC) during slow heating and cooling. Such data for low frequencies between 0.1 and 0.01 Hz are not available, especially for metallic glasses. A crossover between mixed static/dynamic and purely dynamic response signals was observed for the lowest frequencies between 1/80 and 1/100 s⁻¹, which allows a direct determination of the average relaxation time at a given cooling rate during the static glass transition. Further, these results were used to evaluate the experimental parameters necessary to truly separate the static and dynamic response in low-frequency modulation calorimetry experiments to obtain the moduli of the dynamic specific heat.     

Structural relaxation of Al-W amorphous thin films

The pronounced variation of the electrical resistivity of the amorphous Al-W thin films observed during initial heating above room temperature was examined. Both isochronal and isothermal treatments were performed in order to investigate the effects of the film composition, substrate material, and substrate temperature, on the magnitude of the relaxation phenomena. Regarding the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate, and decreased with the aluminum content in the film. The Al₇₈W₂₂ amorphous thin films were subjected to isothermal annealing for 6 h at a temperature of 515 °C. The effects of the substrate material (alumina ceramic, glass and sapphire), and the deposition temperature (LNT, RT, 200 and 400 °C) were examined. The relaxation decreased in a sequence of: alumina ceramic-glass-sapphire substrates, as well as with an increase of the substrate temperature. An assumed dominant role of the aluminum in the effects observed, was tested by the corresponding investigation of Al-Ti and Cu-Ti amorphous thin films.     

Preparation and characterization of ZrO2-SiO2 binary films for planar optical waveguides

ZrO₂-SiO₂ binary films for active optical waveguides were prepared by the sol-gel method with zirconium oxychloride and tetraethoxysilane as precursors. The main factors that influence the film thickness and refractive index have been found. The relationship between the film refractive index composition and heat treatment temperature has been determined. The continuous tuning of the thickness and refractive index of the thin films has also been achieved, which will open up new possibilities in the development of active optical waveguides.     

A single quality factor for the deposition process of reactively sputtered thin a-C:H:N films

The carbon bonding modifications, produced by the different deposition conditions in nitrogenated a-C:H films (a-C:H:N) prepared by reactive-sputtering of a graphite target, are investigated by quantitatively analysing the evolution of the D- and G-bands in the Raman spectra. The film C content is evaluated and shown to depend on the many variables involved into the a-C:H:N film growth through a single quality factor, dimensionless combination of the dimensional process-variables. The film structural changes observed are understood in terms of the decreasing sp³:sp² ratio achieved with the diminishing film C content. The quality factor introduced, able to indicate how the variable-configuration can eventually change without significantly affecting the result in terms of C content and resulting film properties, represents a simple scaling law for the a-C:H:N film deposition, whose validity is preliminarily demonstrated for variations of rf power, total pressure and reactive-gas flow-rate in the ranges from 180 to 300 W, from 20 to 38 mTorr and from 5 to 27 sccm, respectively. A very simple model is therewith proposed accounting for the particular variable combination ultimately effective in determining the final issue of the deposition process. The generality of the proposed method is finally demonstrated.     

A magnetic resonance study on the structure of amorphous networks in the Si–B–N(–C) system

The amorphous networks Si₃B₃N₇ and ‘SiBN₃C' are studied by solid-state nuclear magnetic resonance (NMR), continuous-wave and pulse electron paramagnetic resonance (EPR), and by one- and two-dimensional electron nuclear double resonance spectroscopy. In both compounds, boron is found to be coordinated exclusively by nitrogen with close to trigonal planar geometry and close to equal bond lengths. Silicon is four-coordinated by nitrogen with the coordination tetrahedra being distorted to accommodate the coordination preferences of boron. REDOR measurements demonstrate that boron resides in the second coordination sphere of silicon. Carbon incorporation into the Si–B–N network does not lead to any observable changes in NMR parameters including the average dipolar coupling between ¹¹B nuclei which depends on the average distance of the boron atoms. Only spin–lattice relaxation of the nuclei is accelerated due to the generation of paramagnetic centers. The unpaired electrons appear to be delocalized over several carbon atoms and exhibit significant hyperfine couplings to boron, silicon, nitrogen, and some residual protons. In contrast to electron spectroscopic imaging experiments, the magnetic resonance results suggest formation of carbon clusters.     

Comparative study on hydrophobic anti-reflective films from three kinds of methyl-modified silica sols

Methyl-modified silica sols were prepared with the polymer of methyltriethoxysilane (MTES), the polymer of dimethyldiethoxysiloxane (DDS), and hexamethydisizane (HMDS) as mono-, di-, and tri-methyl modifiers respectively. By comparing the size and the shape of clusters in three different methyl-modified silica sols, the special nature of the sol was found to be the key to the property of films. Different modal modification of methyl to silica particles led to different cluster fractal structures that influenced the morphology, the porosity of films and consequently the anti-reflection characteristics. The contribution of methyls in or on clusters directly determined the hydrophobicity. Using mono- or di-methyl-modified silica sol, the film/water contact angles were less than 120°. But it could reach 165° when using tri-methyl-modified silica sol. The lowest reflectivity of film could reach 0.0% for all the three modified sols. As a result of the comparative study, tri-methyl-modified silica sol was more suitable to prepare hydrophobic anti-reflective film with required high optical performance.     

Study of the phase transition and the thermal nitridation of nanocrystalline sol-gel titania films

Nanocrystalline titania films were prepared by a complexing agent-assisted sol-gel method and converted to titanium nitride by a thermal nitridation process. The effect of acetylacetone (AcAc), diethanolamine (DEA) and acid catalysts (HCl and HNO₃) on the structure and morphology of the heat-treated titania films and on their nitridation products was examined by FTIR spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM). The carbothermal reduction of titania during the nitridation process with the formation of carboxynitrides has been considered. The results showed that the oxide to nitride transition strongly depends on the complexing agent used to prepare the titania films. The XRD results indicated the dependence of the lattice parameter of the nitridation product on the complexing agent or acid catalyst: AcAc and DEA lead to TiN_x with a lattice parameter α close to the theoretical value, while with HCl the lattice parameter was found sensibly lower showing the presence of an oxynitride. These results are accounted for by the effect of complexing agents and acid catalysts on the size of both TiO₂ and TiN grains and the different reactivity of the anatase and rutile phases. The possibility of tailoring the composition and morphology of TiN films by using complexing agents is envisaged.