The role of positronium decoherence in positron annihilation in matter

A small difference between the energies of the para-positronium (p-Ps) and ortho-positronium (o-Ps) states suggests the possibility of the superposition of p-Ps and o-Ps during the formation of positronium (Ps) from pre-Ps, terminating its migration in the matter in a void. It is shown that such a superposition decoheres in the basis of p-Ps and o-Ps. The decoherence time scale estimated here motivates a correction in the precise analysis of the positron annihilation lifetime spectra. More generally, the superposited Ps state should contribute to the theory of the evolution of positronium in matter.     

Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

High purity Fe₂O₃/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe₂O₃/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe₂O₄. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe₂O₃/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.     

Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 °C is hereby reported. By annealing in O₂ environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.     

Effects of electrolyte on ZnO nanostructures synthesized by galvanostatic electrochemical deposition and their UV sensing properties

In this study, ZnO nanorods (NRs) and nanocombs (NCs) are synthesized by simple galvanostatic electrochemical deposition technique, without prepared any ZnO seed-layer or catalyst. The effect of the different morphologies on the UV sensing characteristics has been studied under ambient conditions. The photoluminescence (PL) spectra and time-dependent photoresponse of the ZnO nanostructures exhibited good optical properties. At room temperature, NCs showed superior response with 9% change of its resistance, few seconds response time and fully recovery. Inversely, in high temperature ZnO NRs indicated better response than NCs with the variation of 25% of its resistance. The dependence photoresponse on temperature demonstrated clearly how surface-defects affect on UV response of ZnO nanostructures. Our approach is to provide a simple and cost-effective way to fabricate UV detectors.     

明胶大分子中的正电子湮没行为

利用正电子湮没寿命谱 ,从分子尺度上对两种分别从深海鱼皮和牛骨提取的明胶大分子的微观结构性能进行了研究 .正电子湮没寿命谱的长寿命组分给出了关于明胶大分子中自由体积空穴的信息 .结果表明 ,鱼明胶大分子中自由体积空穴的尺度与数量均低于骨明胶大分子 .同时 ,用鱼明胶和骨明胶作为成核分散介质的乳剂试验表明 ,鱼明胶可以改善卤化银颗粒的单分散性并抑制晶核的生长和聚结 .由此认为 ,明胶作为保护性胶体的功能与其微结构特征相关 .鱼明胶在控制卤化银颗粒成核与生长中的功能强于骨明胶 .     

Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr²⁺ ions substituting for Zn²⁺ ions without any detectable secondary phase in as-synthesized Zn_0.97Cr_0.03O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M_s as well as an increase of coercivity of H₂-annealed Zn_0.97Cr_0.03O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H₂-annealed Zn_0.97Cr_0.03O:H nanoparticles are almost doubled upon H₂-annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H_o may play an important role in the origin of H₂-annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles.     

Controllable growth of well-aligned ZnO nanorod arrays by low-temperature wet chemical bath deposition method

Well-aligned ZnO nanorod arrays were synthesized by low-temperature wet chemical bath deposition (CBD) method on Si substrate under different conditions. Results illustrated that dense ZnO nanorods with hexagonal wurtzite structure were vertically well-aligned and uniformly distributed on the substrate. The effects of precursor concentration, growth temperature and time on nanorods morphology were investigated systematically. The mechanism for the effect of preparation parameters was elucidated based on the chemical process of CBD and basic nucleation theory. It is demonstrated that the controllable growth of well-aligned ZnO nanorods can be realized by readily adjusting the preparation parameters. Strong near-band edge ultraviolet (UV) emission were observed in room temperature photoluminescence (PL) spectra for the samples prepared under optimized parameters, yet the usually observed defect related deep level emissions were nearly undetectable, indicating high optical quality ZnO nanorod arrays could be achieved via this easy process chemical approach at low temperature.     

Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 °C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 °C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 °C and 500 °C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.     

Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios

Thin wurtzite (0 0 2) textured ZnO thin films were deposited on glass substrates by radio frequency magnetron sputtering under O₂/Ar ratios R varying from 0.05 to 1.0 at room temperature. The structure of, and defects in, the films were investigated by XRD, SEM and slow positron beam techniques. The XRD spectra showed that ZnO thin films were polycrystalline with hexagonal structure and a good c-axis orientation perpendicular to the substrate. The thickness, grain size and the crystalline quality of the films strongly depended on R; the larger grain size and thicker ZnO films were grown when R was lower. Positron beam Doppler broadening measurements showed that in low R films additional vacancy-type defects (e.g. Zn-related vacancy complexes or clusters) were formed. Photoluminescence spectra found that the film with R = 0.4 had the highest luminescence efficiency, in good agreement with the best c-axis preferential orientation. The transmittance spectra of the films decreased with decreasing R, due to the thickness effect. Correlations between microstructure, defect and optical properties are discussed.     

Direct assembly of ZnO nanostructures on glass substrates by chemical bath deposition through precipitation method

In this work, spindle/flower-like zinc oxide (ZnO) nanostructured arrays have been directly grown on glass substrates using triethanolamine (TEA) as a complexing agent by chemical bath deposition (CBD). Control over the morphology of ZnO nanocrystallites was achieved by varying the concentration of the complexing agent in the bath solution. ZnO crystallites exhibited a hexagonal wurtzite structure with preferential orientation along the c-axis. The morphology of the ZnO crystallites with star or needle-like spindles was altered to flower like nanostructures by adjusting the complexing agent concentration. Compared to as-deposited films, films sintered at 300 ^°C exhibited a sharp UV emission due to a decrease in the defect density. A possible growth mechanism for obtaining ZnO nanoflower arrays without a seed layer on glass substrates has been discussed.     

Galvanic deposition of ZnO nanorods and thermal annealing effects on their optical properties

The effects of NaCl electrolyte concentrations in the range 6-48 mM on the galvanic deposition of ZnO in Zn(Ac)₂ electrolyte is presented. Effects of thermal annealing on their structural and optical properties have been investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX) microanalysis and photoluminescence (PL). The results show that the increase of NaCl electrolyte concentration not only results in the increase of the diameter of ZnO nanorods, but also promotes the blue-shift of UV emission of ZnO. After air annealing at 200 °C, 300 °C and 400 °C, the UV emission is first enhanced then quenched sharply, while the visible emission tends to be enhanced tremendously. It can be ascribed to the new defect states introduced in ZnO after annealing at high temperature.     

醋酸锌热解温度对ZnO纳米棒的结构及光学性质的影响

采用水热法在普通载玻片上热解醋酸锌生成的ZnO种子层上制备ZnO纳米棒, 采用 X射线衍射仪、扫描电镜、分光光度计等测试手段详细研究了醋酸锌热解温度对 ZnO纳米棒的结构和光学性质的影响. 结果表明: 纳米棒的结晶质量、端面尺寸、宏观应力和透射率与醋酸锌热解温度有密切关系. 随着热解温度的增加, ZnO纳米棒具有的c轴择优取向性先增强后减弱, 拉应力先减小后增大, 可见光区的平均透射率先增大后减小. 热解温度为350 ℃时, ZnO纳米棒c轴择优取向性最强, 拉应力最小, 平均透射率最大. 端面尺寸诱导的表面散射 是影响ZnO纳米棒可见光区平均透射率的主要机制. 关键词： 醋酸锌 水热法 ZnO纳米棒     

Effect of precursor concentration on the growth of zinc oxide nanorod arrays on pre-treated substrates

Well aligned zinc oxide nanorod arrays (ZNAs) synthesized by a simple chemical bath deposition method were fabricated on pre-treated Si substrates. By keeping the molar VI/II ratio constant, the effect of precursor concentration on the growth and optical quality of the ZNAs was investigated. The as-synthesized ZNAs were characterized by field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD) and photoluminescence spectroscopy (PL). FESEM images show that both the diameter and aspect ratio of the ZNAs increase dramatically as the precursor concentration increases. The XRD analysis indicates that all the as-grown ZNAs are crystalline and are preferentially oriented along the c-axis. The high intensity ratio of the UV emission to visible emission in the room temperature PL spectra illustrate that high optical quality ZNAs were produced.     

Effects of annealing temperature on morphologies and optical properties of ZnO nanostructures

The effects of annealing temperature on the morphologies and optical properties of ZnO nanostructures synthesized by sol–gel method were investigated in detail. The SEM results showed that uniform ZnO nanorods formed at 900 C. The PL results showed an ultraviolet emission peak and a relatively broad visible light emission peak for all ZnO nanostructures sintered at different temperature. The increase of the crystal size and decrease of tensile stress resulted in the UV emission peak shifted from 386 to 389 nm when annealing temperature rose from 850 to 1000 C. The growth mechanism of the ZnO nanorods is discussed.     

Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering

ZnO thin films were epitaxially grown on sapphire (0 0 0 1) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800 °C, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (0 0 2) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800 °C in N₂. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (V_O) and interstitial oxygen (O_i). The biggest ratio of the PL intensity of UV emission to that of visible emission (I_NBE/I_DLE) is observed from ZnO thin films annealed at 800 °C in N₂. Therefore, we suggest that annealing temperature of 800 °C and annealing atmosphere of N₂ are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance.     

Morphology evolution of hierarchical ZnO nanostructures modulated by supersaturation and growth temperature

Three kinds of ZnO hierarchical structures, nanocombs with tube- and needle-shaped teeth and hierarchical nanorod arrays, were successfully synthesized through the chemical vapor deposition method. Combining the experimental parameters, the microcosmic growing conditions (growth temperature and supersaturation) along the flux was discussed at length, and, based on the conclusions, three reasonable growth processes were proposed. The results and discussions were beneficial to further realize the relation between the growing behavior of the nanomaterial and microcosmic conditions, and the hierarchical nanostructures obtained were also expected to have potential applications as functional blocks in future nanodevices. Furthermore, the study of photoluminescence further indicated that the physical properties were strongly dependent on the crystal structure.      

Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 °C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 °C showed strong acceptor-bound exciton (A⁰X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum.     

Linear and nonlinear optical properties of ZnO nanorod arrays

Polarization-dependent linear absorption, second-harmonic generation （SHG） and 3rd-order nonlinearities of wellaligned ZnO nanorod arrays have been investigated with ps pulses. The depressed spectral width and the enhanced intensity of reflective SHG along the long axis of ZnO nanorods were observed by using p-polarized pulses, which is explained by the optical confinements. The nonlinear absorption coefficient measured with s-polarization reached the maximum 4.0×10^4cm/GW at the wavelength -750nm, which revealed a large two-photon resonance absorption attributed to the quantum confined exciton when the polarization is vertical to the long axis of ZnO nanorod.     

Effect of carbon source on the carbothermal reduction for the fabrication of ZnO nanostructure

Surface area effect of carbon source on the carbothermal reduction for the fabrication of ZnO nanostructure was investigated. For a systematic comparison, graphite and three kinds of carbon black powder were used as source materials for the carbothermal reduction. Depending on the surface area, the carbothermal reduction at 800 °C for 30 min resulted in Zn-silicate island or ZnO nanorod at the same experimental condition. These structures were characterized with a scanning electron microscopy, a transmission electron microscopy, an energy dispersive spectroscopy and an X-ray photoelectron spectroscopy. The results show that the reducing power of ZnO_(s) source into Zn_(g) vapor is strongly dependent on the surface area of carbon source, and that the fabrication of ZnO nanostructure can be performed more efficiently by using carbon source with large surface area.     

ZnO nanorods on undoped and indium-doped ZnO thin films as a TCO layer on nonconductive glass for dye-sensitized solar cells

We present the growth of ZnO nanostructures on indium-doped ZnO film on a non-conductive glass substrate. The indium-doped ZnO film was used as the transparent conductive layer replaces the ITO layer. Various indium doping concentrations can change the electrical properties of ZnO film. The reduced electrical resistivity was investigated from 16.60 × 10⁻² to 10 × 10⁻² Ω cm. after doping with the optimal concentration of 2 wt% indium. It is found that the characteristic of ZnO nanostructures was strongly affected with indium doping concentration in ZnO films. The overall structural characteristics of ZnO ranged from 100–500 nm in size and 7–10 μm in length and the branch-like structures can be revealed from the 2 wt% indium-doped ZnO film. The room-temperature photoluminescence spectra show a sharp ultraviolet band of 353 nm, indicated to the ZnO nanorods structure. The branch-like structures on the 2 wt% indium-doped film can be yielded the photovoltaic properties with a short-circuit current density of 3.96 mA/cm², an open-circuit voltage of 0.72 V, a fill factor of 20% and an overall power conversion efficiency of 0.56% under irradiance of 100 mW/cm² (AM 1.5 G).