Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer

A thin poly(ethylmethacrylate) (PEMA) layer is deposited on n-InP as an interlayer for electronic modification of Au/n-InP Schottky structure. The electrical properties of Au/PEMA/n-InP Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at different annealing temperatures. Experimental results show that Au/PEMA/n-InP structure exhibit a good rectifying behavior. An effective barrier height as high as 0.83 eV (I–V) and 1.09 eV (C–V) is achieved for the Au/PEMA/n-InP Schottky structure after annealing at 150 °C compared to the as-deposited and annealed at 100 and 200 °C. Modified Norde's functions and Cheung method are also employed to calculate the barrier height, series resistance and ideality factors. Results show that the barrier height increases upon annealing at 150 °C and then slightly decreases after annealing at 200 °C. The PEMA layer increases the effective barrier height of the structure as this layer creates a physical barrier between the Au metal and the n-InP. Terman's method is used to determine the interface state density and it is found to be 5.141 × 10¹² and 4.660 × 10¹² cm^?2 eV^?1 for the as-deposited and 200 °C annealed Au/PEMA/n-InP Schottky diodes. Finally, it is observed that the Schottky diode parameters change with increasing annealing temperature.     

GaAs (100)-(1X1) Structure Analysis from LEED Intensities

GaAs (100)-(1X1) surface grown by molecular-beam epitaxy was studied by low energy electron diffraction (LEED). Intensities of diffraction spots were measured in the energy range of (40-300) eV and analysed using dynamical tensor LEED package. Relaxation of surface layers decreased the Pendry's R-factor to 0.48. Analysis of the LEED intensity-voltage curves for the normal electron incidence shows that the investigated surface structure is more complicated than a simply relaxed ideal surface.     

Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag2Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着...     

Chemical interactions in noncontact AFM on semiconductor surfaces: Si(111), Si(100) and GaAs(110)

Total-energy pseudopotential calculations are used to study the imaging process in noncontact atomic force microscopy (AFM) on Si(111), Si(100) and GaAs(110) surfaces. The chemical bonding interaction between a localised dangling bond on the atom at the apex of the tip and the dangling bonds on the adatoms in the surface is shown to dominate the forces and the force gradients and, hence, to provide atomic resolution. The lateral resolution capabilities are tested in both the Si(100) and the GaAs(110) surfaces. In the first case, the two atoms in a dimer can be resolved due to the dimer flip induced by the interaction with the tip during the scan, while in the GaAs(110), we identify the anion sublattice as the one observed in the experimental images.     

Design,fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society.     

中空型的Ag/Pd和Ag/Pt纳米立方的一锅合成及其光学性能表征

本文通过改进的多元醇法成功制备了尺寸可控、均一的立方形银纳米材料, 然后在不经过任何后处理的情况下通过置换反应一锅合成了中空型的银/钯(Ag/Pd)和银/铂(Ag/Pt)纳米立方体, 并用透射电子显微镜(TEM)和紫外可见吸收(UV-visible)光谱对所合成的Ag纳米立方和空心的Ag/Pd 和Ag/Pt纳米立方进行了表征。     

Valence band photoemission from in-situ grown GaAs(100)-c(4 × 4)

The electron structure of GaAs(100)-c(4 × 4) has been studied by means of angular-resolved photoelectron spectroscopy for photon energies (20–40) eV. The sample was prepared by molecular beam epitaxy in-situ at the BL41 beamline of the MAX I storage ring of the Max-lab in Lund. Photon energy variation helped in separating dispersing bulk features from nondispersing surface features in the energy distribution curves recorded at normal emission. Two sets of peaks were related to bulk transitions from the two topmost E(k _⊥) branches of the valence band of GaAs and one more set came from the surface state in the center of the 2D Brillouin zone. Good agreement was found between experimental bulk dispersion branches and theoretical calculations based on realistic final state dispersion. The surface state peak, hardly visible at 20 and 22 eV photon excitations, gets clearly enhanced at higher excitation energies. In contrast to earlier measurements of this kind, two major differences have been found: (i) clearly developed surface state peak just below the top of the v alence band, (ii) absence of a large peak in the electron energy distribution at around −6.5eV below the valence band top. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells grown on (4 1 1)A GaAs substrates by MBE

Effectively atomically flat GaAs/AlAs interfaces over a macroscopic area (“super-flat interfaces”) have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observed at 4.2 K from each GaAs/AlAs or GaAs/(GaAs) (AlAs) QW grown on (4 1 1)A GaAs substrate. The full-width at half-maximum (FWHM) of a PL peak for GaAs/AlAs QW with a well width ( ) of 4.2 nm was 4.7 meV and that for GaAs/(GaAs) (AlAs) QW with a smaller well width of 2.8 nm (3.9 nm) was 7.6 meV (4.6 meV), which are as narrow as that for an individual splitted peak for conventional GaAs/AlAs QWs grown on (1 0 0) GaAs substrates with growth interruption. Furthermore, only one sharp peak was observed for each GaAs/(GaAs) (AlAs) QW on the (4 1 1)A GaAs substrate over the whole area of the wafer (7 7 mm ), in contrast with two- or three-splitted peaks reported for each GaAs/AlAs QW grown on the (1 0 0) GaAs substrate with growth interruption. These results indicate that GaAs/AlAs super-flat interfaces have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) QWs grown on the (4 1 1)A GaAs substrates.     

A First-Principles Investigation of the Structural and Magnetic Stability of Fe/GaAs(001)

The electronic properties of the interface of Fe/GaAs(001) have been investigated by using first-principles and molecular-dynamics techniques. While the ground state is ferromagnetic for all structures considered, a ferrimagnetic spin structure is found to be very close in energy (<1 meV). The observed lowering of the magnetic moments when relaxing the atomic positions is believed to be connected to this close in energy lying metamagnetic state. On the other hand, the magnetic moments of the Fe atoms at the interface are large, which can be explained by the bulk-like behavior of the density ot states of interface atoms.     

Ag(100)表面氧吸附的密度泛函理论和STM图像研究

用密度泛函理论研究了氧原子的吸附对于Ag(100)表面结构和电子态的影响.通过PAW总能计算研究了p(1×1)、c(2×2)和(2^1/2×22^1/2)R45°等几种原子氧覆盖度下的吸附结构，以及在上述结构下Ag(100)表面的弛豫特性、吸附能量、功函数等一系列物理量.研究表明：在(2^1/2×22^1/2)R45°-2O吸附Ag(100)表面的情况下，每格两列就会缺失     

Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

The charge conduction properties of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) were investigated using current–voltage–temperature (I–V–T) measurements in dark and under various illumination levels. For this purpose, the main diode parameters such as reverse-saturation current (I_o), zero-bias barrier height (Φ_Bo), ideality factor (n), series resistance (R_s) and shunt resistance (R_sh) of diode were obtained as function of temperature and illumination level. Experimental results show that all of these electrical parameters are strong functions of illumination and temperature. The change in all electrical parameters becomes more important at low temperatures and illumination levels. While the n value decreases with increasing temperature and illumination level, Φ_Bo value increases. The fill factor (FF = V_m·I_m/V_oc·I_sc) values were obtained as 0.34 at 80 K and 0.40 at 320 K under 50 W and these values are near to a photodiode. Therefore, the fabricated diode can be used as a photodiode in optoelectronic applications. The forward bias I–V characteristics of the diode have also been explained by the space charge limited current (SCLC) model.     

A novel method for positioning of InAs islands on GaAs (1 1 0)

A novel method for positioning of InAs islands on GaAs (1 1 0) by cleaved edge overgrowth is reported. The first growth sample contains strained In_xGa_1−xAs/GaAs superlattice (SL) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. Atoms incident on the cleaved edge will preferentially migrate to InGaAs regions where favorable bonding sites are available. By this method InAs island chains with lateral periodicity defined by the thickness of InGaAs and GaAs of SL have been realized by molecular beam epitaxy (MBE). They are observed by means of atomic force microscopy (AFM). The strain nanopattern's effect is studied by the different indium fraction of SL and MBE growth conditions.     

Surface resistance measurements at the metal/electrolyte interface of Ag(100) and Ag(111) thin film electrodes

The conductivity of thin film metal electrodes with a thickness of the order of the mean free path of the conduction electrons (50 nm at 300 K) is sensitive to several processes on the metal surface (e.g. adsorption and desorption of ions). We developed epitaxially grown Ag(100)/MgO(100) and Ag(111)/TiO₂(110) electrodes of 20 nm thickness. The change in the surface resistance of Ag(100) thin film electrodes during adsorption of the halide ions Cl⁻, Br⁻ and I⁻ shows the different strengths of specific adsorption. We investigated the phase transition of thiocyanate (SCN⁻) on Ag(100) electrodes by combining the surface resistance method with voltammetric, capacitance and ex-situ XPS measurements. The influence of adsorbed uracil on the resistance of Ag(100) films was demonstrated. The surface resistance is very sensitive to small concentrations of metal cations (e.g. Tl⁺). The surface resistance of Ag(100) and Ag(111) thin film electrodes shows the typical difference in the stripping potential of Tl⁺ of about 100 mV.     

Non-contact atomic force microscopy imaging of TiO2(100) surfaces

Atomically resolved non-contact fm mode atomic force microscopy images have been obtained from TiO₂(100) surfaces. The 1×1 surface is observed, as well as the 1×3 phase previously imaged with STM. The morphology of the latter reconstruction consists of (110) microfacets. An additional reconstruction with 1×3 symmetry is observed, which is assigned to a phase intermediate between the 1×1 and 1×3-microfacet terminations.     

(Au)核(Ag)壳纳米微粒-火焰原子吸收光谱法测定过氧化氢

在90 ℃水浴条件下,以粒径为10 nm的纳米金做晶种,用柠檬酸三钠还原硝酸银,制备了平均粒径为30 nm的（Au）核（Ag）壳纳米微粒,用高速离心纯化除去过量的柠檬酸三钠获得了较纯的（Au）核（Ag）壳纳米微粒。在pH 3.8的HAc-NaAc缓冲溶液中,Fe2＋催化H2O2反应产生的羟基自由基可氧化（Au）核（Ag）壳纳米微粒生成银离子。离心后,离心液中的银离子可用火焰原子吸收光谱法在328.1 nm波长处测量。随着H2O2浓度增大,离心液中银离子浓度增加,其吸光度值增加。H2O2浓度在2.64～42.24 μmol&#183;L-1范围内与上清液中银离子的原子吸收值ΔA呈良好的线性关系,回归方程为ΔA=0.014c-0.013 1, 相关系数为0.998 4,检出限为0.81 μmol&#183;L-1 H2O2。当用于水样中H2O2的测定,获得了满意的结果。     

Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究

单晶Si和蓝宝石(0001)是两种重要的3C-SiC异质外延衬底材料,然而,由于Si及蓝宝石和3C-SiC之间大的晶格失配度和热膨胀系数失配度,在3C-SiC中会产生很大的内应力,直接影响3C-SiC的电学特性。Raman散射测试是一个功能很强的测试方法,其强度、宽度、Raman位移等有关Raman参数可以给出有关SiC晶体质量的信息,其中包括内应力。利用背散射几何构置的Raman方法研究了Si(100)和蓝宝石(0001)村底上LPCVD方法生长的SiC外延薄膜,在生长的所有样品中均观察到了典型的3C-SiC的TO和LO声子峰,在3C-SiC／Si材料中,这两个声子峰分别位于970．3cm-l和796．0cm-1,在3C-SiC／蓝宝石材料中,分别位于965．1cm^-1和801．2cm-1,这一结果表明这两种外延材料均为3C-SiC晶型。利用一个3C-SiC自由膜作为无应力标准样品,并根据3C-SiC／Si和3C-SiC／蓝宝石的TO和LO声子峰Raman位移相对于自由膜的移动量,得到3C-SiC中的内应力约分别为1GPa和4GPa。实验发现在这两种材料的TO声子峰的Raman位移移动方向相反,通过比较3C-SiC、Si和蓝宝石的热膨胀系数,预期Si衬底上的3C-SiC外延膜受到的应力为张应力,而蓝宝石衬底上3C-SiC受到的应力则为压应力。     

Vertical bonding distances of PTCDA on Au(1 1 1) and Ag(1 1 1): Relation to the bonding type

The vertical bonding distance of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) above the Au(1 1 1) surface has been measured by the normal incidence X-ray standing wave (NIXSW) technique. The carbon skeleton of PTCDA has a vertical distance of D = (3.27 ± 0.02) Å to the Au(1 1 1) substrate. This distance corresponds very nearly to the sum of the van der Waals radii of carbon and gold, suggesting the adsorption to be a physisorptive one. In contrast, the PTCDA/Ag(1 1 1) interface which according to spectroscopic data follows the standard model of chemisorption very closely, shows a considerably smaller bonding distance of D = (2.86 ± 0.01) Å [A. Hauschild, K. Karki, B.C.C. Cowie, M. Rohlfing, F.S. Tautz, M. Sokolowski, Phys. Rev. Lett. 94 (2005) 036106, comment: Rurali et al., Phys. Lett. 95 (2005) 209205, reply: Phys. Rev. Lett. 95 (2005) 209206]. The different vertical adsorption heights of PTCDA on gold and silver are discussed in relation to the different bonding mechanisms on both noble metal surfaces.     

Interfacial reaction and electrical characteristics of Cu(RuTaNx) on GaAs: Annealing effects

This study elucidates the thermal stability and quasi ohmic contact characteristics of Cu(RuTaN_x) fabricated on a barrierless GaAs substrate. Cu(RuTaN_x) was prepared by cosputtering Cu, Ta, Ru, and N. The resistivity of the Cu(RuTaN_x)/GaAs structure annealed at 500 °C for 30 min was lower than that of the as-deposited structure, and the former was thermally stable up to 500 °C after 30 min of annealing. Further, the Cu(RuTaN_x)/GaAs structure exhibited electrical rectifying properties upon annealing at 550 °C for 10 min and revealed a quasi ohmic contact, as determined by the circular transmission line model (CTLM). The formation of quasi ohmic contact is further confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy.