Ferroelectric and dielectric properties of La/Mn co-doped Bi4Ti3O12 ceramics

La/Mn co-doped Bi4Ti3O12 ceramics,Bi3.25La0.75Ti3-xMnxO12(x=0.02,0.04,0.06,0.08),were prepared by the solid-state reaction method.The influence of manganese substitution for the titanium part in Bi 3.25 La 0.75 Ti 3 O 12 on the sintering behaviour,microstructure,Raman spectra and electrical properties was investigated.The experimental results show that the phase composition of all samples with and without manganese doping,sintered at 1000 ℃,consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12.There is no evidence of any impurity phase,but a small change in crystallographic orientation is observed.The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content.Moreover,the remnant polarisation(Pr) of Bi3.25La0.75Ti2.92Mn0.08O12 samples increases with Mn-doping content,and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest P r of 16.6 μC/cm 2.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Microstructure,dielectric and piezoelectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>-Ba(Ti<Subscript>0.95</Subscript>Zr<Subscript>0.05</Subscript>)O<Subscript>3</Subscript> lead-free ceramics with CuO sintering aid

Using an ordinary ceramic fabrication technique, we fabricated lead-free (1-x)(K_0.5Na_0.5)NbO₃-xBa(Ti_0.95Zr_0.05)O₃ ceramics with CuO sintering aid . Ba(Ti_0.95Zr_0.05)O₃ diffuses into (K_0.5Na_0.5)NbO₃ to form a new solid solution. The ceramics with perovskite structure possess orthorhombic phase at x≤0.04 and become tetragonal phase at x≥0.06. Both the paraelectric cubic–ferroelectric tetragonal and the ferroelectric tetragonal–ferroelectric orthorhombic phase transition temperatures decrease with increasing the concentration of Ba(Ti_0.95Zr_0.05)O₃. The doping of CuO effectively promotes the densification of the ceramics. The coexistence of the orthorhombic and tetragonal phases at 0.04<x<0.06 and the improvement in sintering performances of the ceramics significantly enhance the piezoelectric and dielectric properties at room temperature. The ceramics with x=0.04–0.06 and y=0.75–1.50 possess excellent properties: d₃₃=119–185 pC/N, k_P=37–44%, k_t=35–49%, ε=341–1129, cosδ=0.7–4.4% and T_c=312–346 °C. PACS 77.65.-j; 77.84.Dy; 77.84.-s     

Ferroelectric properties of Bi3.25−x/3La0.75Ti3−xNbxO12 films prepared by pulsed laser deposition

Bi₄Ti₃O₁₂ (BiT), Bi_3.25La_0.75Ti₃O₁₂ (BLT), Bi_4−x/3Ti_3−xNb_xO₁₂ (BTN) and Bi_3.25−x/3La_0.75Ti_3−xNb_xO₁₂ (BLTN) thin films have been prepared by pulsed laser deposition. BTN and BLTN films exhibit a maximum in the remanent polarization P_r at a Nb content x=0.018. At this Nb content, the BLTN film has a P_r value (25 μC/cm²) that is much higher than that of BiT and a coercive field similar to that of BiT. The polarization of this BLTN film is fatigue-free up to 10⁹ switching cycles. The high fatigue resistance is mainly due to the substitution of Bi³⁺ ions by La³⁺ ions at the A site and the enhanced P_r arises largely from the replacement of Ti⁴⁺ ions by Nb⁵⁺ ions at the B site. The mechanisms behind the effects of the substitution at the two sites are discussed.     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi_3.25La_0.75Ti₃O₁₂铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi_3.25La_0.75Ti₃O₁₂薄膜未能充分晶化，晶粒细小且有非晶团聚，介电与铁电性能均较差.高于550℃退火处理的Bi_3.25La_{0.75 关键词： 铁电薄膜 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ Sol-Gel工艺     

La掺杂对Bi4Ti3O12薄膜铁电性能的影响

利用Sol-Gel法在Pt/Ti/SiO₂/Si衬底上制备出Bi₄Ti₃O₁₂和Bi_3.25La_0.75Ti₃O₁₂薄膜，研究了La掺杂对Bi₄Ti₃O₁₂薄膜的晶体结构、铁电性能和疲劳特性的影响，发现La掺杂没有改变Bi₄Ti₃O₁₂薄膜的基本晶体结构，并且提高了Bi₄Ti₃O₁₂铁电薄膜的剩余极化值和抗疲劳性能，对La掺杂改善Bi₄Ti₃O₁₂铁电薄膜性能的机理进行了讨论. 关键词： 铁电性能 4Ti₃O₁₂薄膜')" href="#">Bi₄Ti₃O₁₂薄膜 3.25La_0.75Ti₃O₁₂薄膜')" href="#">Bi_3.25La_0.75Ti₃O₁₂薄膜 sol-gel法 La掺杂     

Phase transition and electrical properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)(Nb<Subscript>1-x</Subscript>Ta<Subscript>x</Subscript>)O<Subscript>3</Subscript> lead-free piezoelectric ceramics

(K_0.5Na_0.5)(Nb_1-xTa_x)O₃ lead-free piezoelectric ceramics have been prepared by an ordinary sintering technique. The results of X-ray diffraction reveal that Ta⁵⁺ diffuses into the K_0.5Na_0.5NbO₃ lattices to form a solid solution with an orthorhombic perovskite structure. Because of the high melting temperature of KTaO₃, the (K_0.5Na_0.5)(Nb_1-xTa_x)O₃ ceramics can be sintered at higher temperatures. The partial substitution of Ta⁵⁺ for the B-site ion Nb⁵⁺ decreases both paraelectric/cubic–ferroelectric/tetragonal and ferroelectric/tetragonal–ferroelectric/orthorhombic phase transition temperatures, T_C and T_O-T. It also induces a relaxor phase transition and weakens the ferroelectricity of the ceramics. The ceramics become ‘softened’, leading to improvements in d₃₃, k_p, k_t and ε_r and a decease in E_c, Q_m and N_p. The ceramics with x=0.075–0.15 become optimum, having d₃₃=127–151 pC/N, k_p=0.43–0.44, k_t=0.43–0.44, ε_r=541–712, tanδ=1.75–2.48% and T_C=378–329 °C. PACS 77.65.-j; 77.84.Dy; 77.84.-s     

Effect of substitution of vanadium on the structure and electrical properties of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

The ferroelectric and dielectric properties of Bi_4-xLa_xTi₃O₁₂ (BLT) and Bi_4-xLa_xTi_2.97V_0.03O₁₂ (BLTV) thin films deposited on (111)Pt/Ti/SiO₂/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 C/cm²) than the BLT thin films (6.5 C/cm²), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleighs law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration. PACS 77.80.Bh; 77.55.+f     

Structural and optical properties of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films prepared by chemical solution methods

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films have been grown on Pt/Ti/SiO₂/Si substrates by chemical solution methods. X-ray diffraction analysis shows that BLT thin films are polycrystalline with (171)-preferential orientation. Atomic force microscopy investigation shows that they have large grains about 120 nm in size. A Pt/BLT/Pt capacitor has been fabricated and showed excellent ferroelectricity, with a remnant polarization and coercive field of 24 μC/cm² and 116 kV/cm, respectively. The capacitor shows no polarization fatigue up to 10⁹ switching cycles. The optical constants (n,k) of the BLT thin films in the wavelength range 0.35–1.7 μm were obtained by spectroscopic ellipsometry measurements, and the band-gap energy was found to be about 3.25 eV. Received: 16 October 2001 / Accepted: 6 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/65830-734, E-mail: gswang@mail.sitp.ac.cn     

Electrical studies on Zr-modified Bi3.25La0.75Ti3O12: a promising FRAM ceramic

Zr-modified Auruvillius family of lanthanum bismuth titanate, namely Bi_3.25La_0.75Ti_3?xZr_xO₁₂ (BLTZ, x = 0, 0.1, 0.3, 0.5, 0.7 and 1), was prepared by solid-state reaction method. Dielectric properties of the ceramics were studied as a function of temperature. Hysteresis measurements were also performed. Among the composition, Bi_3.25La_0.75Ti_2.9Zr_0.1O₁₂ (BLTZ1) showed large remnant polarization compared to the promising ceramic, namely Bi_3.25La_0.75Ti₃O₁₂. The results were corroborated with the pyroelectric, electric polarization and Raman spectroscopic data.     

Effect of Ba-substitution on the structure and properties of Pb<Subscript>0.8</Subscript>Ba<Subscript>0.2</Subscript>[(In<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)<Subscript>1-x</Subscript>Ti<Subscript>x</Subscript>]O<Subscript>3</Subscript> ceramics

Ferroelectric ceramics with formula Pb_0.8Ba_0.2[(In_1/2Nb_1/2)_1-xTi_x]O₃ (PBINT) (x=0.0,0.1,0.2,0.3,0.4 and 0.5) were prepared via a two-step solid state reaction method. It was found that ceramics with compositions in the range of x=0.0∼0.3 showed a pseudo-cubic structure, whereas the ceramic with x=0.5 displayed a tetragonal structure. All compositions showed significant frequency dispersion in their dielectric properties. The remanent polarization P_r as well as the coercive field E_c, measured at room temperature, increases with the Ti content. The experimental results obtained in this system are summarized into a phase diagram, with the morphotropic phase boundary (MPB) located at x=0.4. Compared with the Pb[(In_1/2Nb_1/2)_1-xTi_x]O₃ solid solution system, incorporating Ba in the A-site leads to a significant decrease in the dielectric maximum temperature T_max, a suppression of the dielectric relaxation parameter γ, and a shift of the MPB composition to a higher Ti content. PACS 77.84.Dy; 77.80.Bh; 77.22.Ch     

Nb(Ba)加强Bi系中2223相生成作用研究

固相法合成系列名义组成为Bi_2-xNb_xSr₂Ca₂Cu₃O_y(x=0—1.0)的样品,电学和磁学测量表明,当掺入x=0.2—0.3的Nb有明显加强2223相生成的作用,配比为Bi_1.7Nb_0.3Sr₂Ca₂Cu₃O_y时最佳;当掺Ba以部分取代Sr后有明显协同Nb促进2223相生成的作用,比单掺Nb效果更为显著,其中以Bi_1.7Nb_0.3Sr_1.8Ba_0.2Ca₂Cu₃O_y为最优组成。热重分析(TGA)实验显示,掺Nb(Ba)后样品在～600°C出现吸氧增重;XPS中的O_1s峰显示掺Nb(Ba)后除～531eV的主峰外,在～529eV的肩峰更加明显;讨论了Nb(Ba)对晶体结构的可能影响。 关键词：     

Polarization processes in BaBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> and SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics in infralow-frequency fields

The dielectric nonlinearity in BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ layered ceramics was studied by measuring their polarization loops and reverse dependences of permittivity. It was shown that the features of the dielectric response of BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ in strong fields can be explained by glass-like properties and the contribution of the domain structure of the ferroelectric material to repolarization processes, respectively.     

Synthesis, structural and electrical properties of La and Nb modified Bi4Ti3O12 ferroelectric ceramics

Polycrystalline ceramic samples of Bi_4−xLa_xTi₃O₁₂ (x=0.0, 0.5 and 1) and Bi_3.5La_0.5Ti_3−yNb_yO₁₂ (y=0.02 and 0.04) have been synthesized by standard high temperature solid state reaction method using high purity oxides and carbonates. The effect of lanthanum doping on Bi-site and Nb doping on Ti-site on the structural and electrical properties of Bi₄Ti₃O₁₂ powders was investigated by X-ray diffraction, scanning electron microscopy, dc conductivity and dielectric studies. A better agreement between the observed and calculated X-ray diffraction pattern was obtained by performing the Rietveld refinement with a structural model using the non-centrosymmetric space group Fmmm in all the cases. A better agreement between observed and calculated d-values also shows that the lattice parameters calculated using the Rietveld refinement analysis are better. The increase in lanthanum and niobium contents does not lead to any secondary phases. It is found that La³⁺ doping reduces the material grain size and changes its morphology from the plate-like form to a spherical staking like form. The substitution of Nb for Ti ions affected the degree of disorder and modified the dielectric properties leading to more resistive ceramic compounds. The shape and size of the grains are strongly influenced by the addition of niobium to the system. The activation energies of all the compounds were calculated by measuring their dc electrical conductivities. The frequency and temperature dependent dielectric behavior of all the compounds have also been studied and the results are discussed in detail. The substitution of La and Nb on the Bi and Ti sites decreased the T_c and improved the dielectric and ferroelectric behavior.     

Processing and some properties of biferroic Bi<Subscript>5</Subscript> Ti<Subscript>3</Subscript> FeO<Subscript>15</Subscript> ceramics

Bi₅Ti₃FeO₁₅ (BTF) is an example of bifferoic Aurivillius phase with perovskite layered structure. Materials on the basis BTF are of substantial interest for new types of magnetoelectric device applications. In this review we discuss technology of preparation biferroic ceramic with composition Bi₅Ti₃FeO₁₅. The ferroelectric layered Bi₅Ti₃FeO₁₅ (BTF) Aurivillius phases were synthesized by solid-phase synthesis reaction from the conventional mixture of oxides, viz. Bi₂O₃, Fe₂O₃, TiO₂. Thermal analysis and mass change efect were used to investigate synthesis effects in the stoichiometric mixture of powders. The crystalline structure was checked by X-ray diffraction method at room temperature. Microstructure was investigated by scanning electron microscopy.     

Dielectric investigations in Sr<Subscript>0.75</Subscript>Ba<Subscript>0.25</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript> relaxor ferroelectric thin films

The dielectric properties of Sr_0.75Ba_0.25Nb₂O₆ relaxor ferroelectric thin films were carefully analyzed. In contrast to bulk samples which present three distinct dielectric relaxation phenomena Sr_0.75Ba_0.25Nb₂O₆ thin films present only two of them. The suppression of the third anomaly can be mainly attributed to the narrow grain size distribution of nanograins and weak tensile strains imposed to the film from the substrate. The whole set of results point to the interpretation of a dielectric response characteristic of mesoscopic structure, which is composed of clusters and nanodomains.     

Impedance analysis of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric ceramic

AC impedance spectroscopy technique has been used to study electrical properties of Bi_3.25La_0.75Ti₃O₁₂ (BLT) ceramic. Complex impedance plots were fitted with three depressed semicircles, which are attributed to crystalline layer, plate boundary and grain boundary and all three were found to comprise of universal capacitance nature [C = C0w ⁿ⁻¹]. Grain boundary resistance and capacitance evaluated from complex impedance plots have larger values than that of plate boundary and crystalline layer. The activation energies (E _a) for DC-conductance in grain boundary, plate boundary and crystalline layer are 0.68 eV, 0.89 eV and 0.89 eV, respectively. Relaxation activation energies calculated from impedance plots showed similar values, 0.81 eV and 0.80 eV for crystalline layer and plate boundary, respectively. These activation energy values are found to be consistent with the E _a value of oxygen vacancies in perovskite materials. A mechanism is offered to explain the generation of oxygen vacancies in BLT ceramic and its role in temperature dependence of DC-conductance study.      

Effect of Al-Mo codoping on the structure and ionic conductivity of sol-gel derived Li<Subscript>7</Subscript>La<Subscript>3</Subscript>Zr<Subscript>2</Subscript>O<Subscript>12</Subscript> ceramics

Al-Mo codoped Li₇La₃Zr₂O₁₂ ceramics with fine grain were prepared by sol-gel method. The influences of Al-Mo codoping on the structure, microstructure, and conductivity of Li₇La₃Zr₂O₁₂ were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and impedance spectroscopy. The cubic phase Li₇La₃Zr₂O₁₂ has been stabilized by partial substitution of Al for Li and Mo for Zr. Li_6.6-3yAl_yLa₃Zr_1.8Mo_0.2O₁₂ (0?≤?y?≤?0.1) has been sintered at 1040–1060 °C for 3 h. The liquid sintering facilitated its densification. The relative density of the composition with x?=?0.075 was approximately 96.4%. Results indicated that the Al-Mo codoped LLZO synthesized by sol-gel method effectively lowered its sintering temperature, accelerated densification, and improved the ionic conductivity.     

Magnetic resonance in Pb<Subscript>x</Subscript>Nb<Subscript>y</Subscript>O<Subscript>z</Subscript> ceramics as a system containing chemical fluctuation regions

Simulation of the chemical fluctuation regions in PMN-like relaxors through growth of the Pb_xNb_yO_z eramics was performed. Different Pb_xNb_yO_z clusters (chemically and structurally) coexist in such ceramics. Hole polaron and bipolaron (Cr³⁺-two polaronic-hole) paramagnetic complexes were considered for explanation of the EPR spectra in Pb_xNb_yO_z ceramics. Dynamical averaging, light-induced effects, and significant effects of reduction treatment giving the coexistence of Nb⁵⁺ and Nb³⁺ ions, as well as of a strong internal magnetic field, were discovered in this ceramics. The latter could be related to antiferromagnetic phase realization in Pb_xNb_yO_z clusters containing a sufficiently high concentration of magnetic Nb³⁺ host lattice ions. Such a situation leads to antiferromagnetic resonance on Nb³⁺ ions, as well as to EPR of Cr³⁺-related paramagnetic complexes in a Nb³⁺-induced internal magnetic field. Charge transfer vibronic excitons (CTVE) in free and in CTVE phase states were detected in Pb_xNb_yO_z ceramics by photoluminescence studies.     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk