火焰发射光谱法测定碱金属元素的研究

本文研究了火焰发射光谱法测定钾、钠等碱金属元素的各种测定条件，选择其最佳条件。通过标准样品的测定，试验了该方法的准确度、精密度、直接可测定的浓度范围、检出限以及不同燃烧器对测定的影响。试验结果表明，浓度范围在0.5－46微克／毫升时，回收率为97－102％；同一试样分别称样10次测定结果，其标准偏差为0.0049；浓度范围为0－50微克／毫升时，校准曲线呈直线，而用原子吸收方法，大约至5微克／毫升浓度时校准曲线已开始弯曲，火焰发射光谱法可节省空心阴极灯，从而使测定更简便快速。因此，火焰发射光谱测定碱金属元素比原子吸收光谱法更优越。     

火焰原子发射光谱法测定磷酸锂中的钙

对火焰原子吸收光谱法测定磷酸锂中的钙的方法进行研究.在选定的最佳仪器条件下,测定钙的RSD最大为1.90％.样品中钙的回收率在105.2％-108.1％之间.方法操作简单,快速,结果准确稳定.     

电感耦合等离子体发射光谱法测定烟道灰中的铟

铟是一种银白色稀有稀散金属,在地壳中的平均质量分数为0.000 01%,为了准确测定烟道灰样品中低含量的铟,通过对样品成分的初步分析,确定实验中溶解样品所用的酸及其比例。依次逐步加入HCl, HNO3, HF和HClO4(V∶V∶V∶V=15∶5∶2∶2),将样品完全溶解后,冷却至室温并移入分液漏斗,在HBr介质中,以溴化铵做盐析剂(溶液体积控制在25 mL左右);移取25 mL乙酸乙酯作为萃取剂和稀释剂,萃取液直接导入配备有机进样系统的电感耦合等离子体原子发射光谱仪(ICP-AES),选择In 230.606 nm为分析谱线,对烟道灰样品中的铟进行测定,从而建立了电感耦合等离子体原子发射光谱法(ICP-AES)测定烟道灰样品中铟的方法。实验样品溶解后,采用萃取分离法消除基体元素及共存元素的干扰。通过对萃取酸度、萃取剂、萃取方法、盐析剂、分析谱线等条件试验,确定了最优的实验条件。铟的质量浓度在0.25~4.00 mg·L^-1范围内与其发射强度呈线性关系,校准曲线线性相关系数为0.999 3,检出限为0.03 mg·L^-1,测定结果的相对标准偏差(n=11)小于5%,回收率在92%~102%之间。按照上述试验步骤测定5个烟道灰样品中的铟含量,其测定结果与ICP-MS法比较吻合。另外,与现有的分析方法(EDTA滴定法、分光光度法、原子吸收光谱法、 X射线荧光光谱法、电感耦合等离子体原子发射光谱法及质谱法等)相比,该法具有简便,快速,灵敏,准确度较高的优点,可用于铟含量在0.000 8%~0.10%之间烟道灰样品的批量检测。     

讨论火焰发射法中的干扰与抑制

本文详细讨论了火焰发射法测定碱金属和碱土金属其单荐元素时，对外来物质的影响、基体效应及非金属因素对样品测定的干扰造成的影响都作了专门的阐述。同时针对性地提出了几种行之有效的抑制办法。通过加入各种相应的释放剂和适当控制火焰本身的辐射来寻求进一步提高分析结果准确度的办法途径，提出了自己的独到见解。     

火焰发射光谱法测定含锶卤水中的锂

用硫酸钠作掩蔽剂,火焰发射光谱法测定含锶卤水中的锂,有效的消除了锶对锂的干扰,方法测定检出限为1.18mg/L.加标回收率为98.5%-101.5%.对含锶卤水样品中锂进行11次平行测定,计算方法的精密度(RSD)为:0.39%.     

火焰原子吸收法测定矿石中的低含量钼

本文介绍了用火焰原子吸收法测定矿石中低含量钼的方法，确定了最佳仪器条件。对共有元素及掩蔽方法都做了研究，取得满意结果。     

火焰原子吸收法测定钛合金中的硅

本文用火焰原子吸收光谱法测定钛合金中的硅。并研究了钛合金中基体元素钛和共存元素对硅含量测定的干扰情况，进行了校准曲线的试验。方法简单、快捷，具有良好的精密度和准确性。相对标准偏差为1．8％－3．7％，回收率为100％－102％。     

火焰原子吸收光谱法测定茶叶中的铅

用火焰原子吸收光谱法测定了茶叶中铅含量，在一定的条件下，茶叶样品的铅可不经MIBK萃取分离而直接用火焰原子吸收光谱法进行测定，测定结果令人满意。     

火焰原子吸收法测定工业硅中的铜

采用火焰原子吸收法测定工业硅中杂质元素铜,操作简便、快速,结果准确。     

极谱法测定锌、锑渣氧粉中的铟

提出了以溴化钾-水杨酸-硫酸羟胺-硫酸溶液为底液,采用单扫描极谱法测定锌、锑渣氧粉中铟的新方法。实验条件下,铟于-0.59V(相对于饱和甘汞电极)处产生一个灵敏的极谱波。结果表明,铟的峰电流与其浓度在0.008—40μg/mL范围内有良好的线性关系,检出限为0.002μg/mL。用本法测定实际样品中的微量铟,其相对标准偏差为0.6%—1.5%,加标回收率为95.3%—102.8%,结果满意。     

负载苯基荧光酮纤维柱富集-GFAAS测定痕量铟

研究负载苯基荧光酮(PF)滤纸纤维柱预富集痕量铟,确立了制备负载苯基荧光酮纤维的最佳条件,对铟的富集、洗脱和测量条件进行了优化。含In待富集液在pH 5时,以2.0 mL·min-1的速率过柱,用8 mL 5.00 mol·L-1的HNO₃以1.0 mL·min-1的速率可以完全洗脱。用涂钨普通石墨管GFAAS测量In,选Ag作基体改进剂,提高了灵敏度。该方法检出限为0.32 ng·mL-1,回收率为95.0%～101%,RSD 1.8％～7.0％,测定自来水样品和人工合成锌、铝等样品的In,得到满意的结果。     

岭回归原子吸收光谱法同时测定钴和铟

用岭回归法校正了火焰原子吸收光谱分析中In 252.137nm对Co 252.136nm的吸收线重叠干扰,对合成样品中Co和In的含量进行了同时测定,结果令人满意.可以认为岭回归可能是解决原子吸收谱线重叠干扰的一种方法.     

Multicomponental Fluorimetric Determination of Aluminium, Gallium and Indium

For the fast characteristics of mixtures of Aluminium, Gallium and Indium the fluorimetric evaluation in the form of complexes with 8-Hydroxyquinoline-5-sulphonic acid is described at selected pH. The highly collinear correlated fluorescent spectra and their first derivation were evaluated under various experimental conditions with the Multiple Linear Regression (MLR), Partial Least Squares (PLS) methods and Kalman filtering. When comparing the results, the PLS gives the least relative prediction errors under optimal conditions, 5.6–15.9% for the concentration range of Al 0.025–0.2 μg cm⁻³, Ga 0.1–0.8 μg cm⁻³ and In 0.1–0.8 μg cm⁻³ in the mixture.     

偏最小二乘法在原子吸收光谱分析中的应用——钴和铟的同时测定

本文用偏最小二乘法（ＰＬＳ）校正了火焰原子吸收分析Ｉｎ２５２．１３７ｎｍ对Ｃｏ２５２．１３６ｎｍ的吸收线重叠干扰,对混合样中Ｃｏ和Ｉｎ的含量进行了测定,结果令人满意。     

等温平台石墨炉原子吸收光谱法测定高纯铟中痕量杂质镉和锑

石墨炉原子吸收法在等温平台条件下 ,利用标准加入法直接测定了高纯铟中的痕量杂质镉和锑。对石墨炉加热程序中的干燥时间、灰化温度及原子化温度进行了优化 ,考察了介质酸度的影响。在测定锑时 ,加入了基体改进剂钯。镉和锑的特征质量分别为 3.2 pg和 77.1 pg,相对标准偏差平均值分别为 1 .9%和 3.1 % ,加标回收率分别为 86 %— 92 %和 81 %— 91 %。     

Indium zinc oxide thin films deposited by sputtering at room temperature

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10¹⁴ and 3 × 10²⁰ cm⁻³ by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10⁻³ and 10⁴ Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm² V⁻¹ s⁻¹.The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.     

Indium tin oxide sol-gel precursor conversion process using the third harmonics of Nd:YAG laser

We use the third harmonics of Nd:YAG laser (λ = 355 nm) for simultaneous precursor conversion and dopant activation on sol-gel ITO thin films at a laser fluence range of 700-1000 mJ/cm². A minimum resistivity of 5.37 × 10⁻² Ω-cm with a corresponding carrier concentration of 6 × 10¹⁹ cm⁻³ is achieved at laser irradiation fluence of 900 mJ/cm². X-ray photoelectron analysis reveals that extremely high tin concentration of 19.4 at.% and above is presented in the laser-cured ITO thin films compared with 8.7 at.% in the 500 °C thermally cured counterpart. These excess tin-ions form complex defects, which contribute no free carriers but act as scattering centers, causing inferior electrical properties of the laser-cured films in comparison with the thermally cured ones.     

A Solid Phase Extraction Application of Hybrid Nano B_2O_3/ZrO_2 for Separation and Determination of Trace Indium in Environmental Samples

Hybrid nanomaterials have attracted considerable interest in environmental science, analytical chemistry and atomic spectroscopy. In the present study, a column solid phase extractioo procedure was developed for the separation and preconcentration of indium in various matrixes by using hybrid nanomaterial B₂O₃/ZrO₂ (HNMBZ). Various experimental and analytical parameters such as sample solution pH, sample solution volume, flow rate of sample solution and eluent, volume and concentration of eluent aod amount of HNMBZ, effect of common matrix ions and capacity of sorbent were investigated. The adsorbed metal ions on HNMBZ were eluted with 6 mL of 1 mol·L-1 HNO₃ solutions and their concentrations were determined by high-resolution continuum source flame atomic absorption spectrometry (HR-CS FAAS). Under the optimized conditions, detection limits for indium for 3 pixels and 5 pixels were found as 0.20 and 0.16 μg·L-1, respectively. The accuracy of the procedure was checked by spiked water samples. The developed procedure was successfully applied to real samples for the separation and determination of indium.