MnO2掺杂对BiFeO3-PbTiO3-Bi(Zn1/2Ti1/2)O3-PbZrO3陶瓷组织与性能的影响

采用固相烧结法制备MnO2掺杂的BiFeO3-PbTiO3-Bi(Zn1/2Ti1/2)O3-PbZrO3 (BF-PT-BZT-PZ)压电陶瓷,研究了不同MnO2掺杂量对材料结构及压电介电性能的影响.实验结果表明,适量的MnO2掺杂,不仅能使晶粒长大,提高晶界强度,而且可以改善材料的介电压电性能.当MnO2掺杂量为0.1 mol;时,880℃(5 h)烧结的陶瓷样品性能参数为:d33 =97 pC/N,kp=0.29,kI=0.37,εr=390,tanδ ～0.02.     

退火工艺对0.9Al2O3-0.1TiO2微波介质陶瓷性能与结构的影响

采用反应烧结法制备0.9Al2O3-0.1Ti O2微波介质陶瓷,研究了退火时间,退火气氛对其物相组成、显微结构、微波介电性能的影响。结果表明:经过退火后,第二相Al2Ti O5分解,陶瓷的表面规整,致密度高;延长退火时间以及合适的退火气氛可以有效地提高0.9Al2O3-0.1Ti O2陶瓷的Q×f值。在空气气氛下,1350℃烧结4 h,氧气气氛下1100℃退火20 h的0.9Al2O3-0.1Ti O2微波介质陶瓷具备优异的介电性能:εr=12.50,Q×f=79812 GHz,τf=0.13 ppm/℃。     

烧结升温速率对钛酸钡陶瓷压电性能的影响

采用固相反应方法在不同烧结升温速率下制备了BaTiO3陶瓷,并对陶瓷样品的晶体结构、表面形貌、介电、压电和铁电性能进行了测试和分析.结果表明:当烧结升温速率为3 ℃/min和5 ℃/min时陶瓷均为四方钙钛矿晶格结构,随升温速率的增大,四方相程度增强,材料平均晶粒尺寸减小,压电系数和铁电性能随之降低,但介电常数随之增大,当烧结升温速率为5 ℃/min介电常数最大,其值为3144.当烧结升温速率为1 ℃/min时陶瓷为正交钙钛矿晶格结构d33和Pr最大,其值为Pr=10 μC/cm2和d33=193 pC/N.     

烧结温度和升温速率对Pb(Sb1/3Mn2/3)0.05Zr0.47Ti0.48O3压电陶瓷性能的影响

采用传统固相法制备了Pb(Sb1/3 Mn2/3)0.05Zr0.47Ti0.48 O3 (PMS-PZT)压电陶瓷.利用XRD、SEM和EDS等研究PMS-PZT陶瓷体系在烧结过程中形成的过渡液相和形成过渡液相温度(1100℃)附近的升温速率对陶瓷结构、压电和介电性能的影响.结果表明:不同烧结温度下,所有样品均为单一的钙钛矿四方相,过渡液相不会对相的结构有影响,但是当烧结温度较低时,过渡液相在烧结后期以玻璃相在晶界附近富集,对陶瓷的压电和介电性能有很大影响.随着烧结温度和升温速率的升高,PMS-PZT晶粒尺寸增大,晶粒均匀性和规则性得以改善,晶化质量得到提高;d33测试和阻抗分析测试结果表明PMS-PZT样品在1100℃附近以7 ℃·min-1升温速率并在1250℃烧结时具有最好的压电和介电性能:d33 =313 C/N,kp=0.59,Qm=1481,εr=1437,tanδ=0.53;.     

Al2O3加入量对AlN-Al2O3复相陶瓷制备及性能的影响

以AlN和Al2O3为原料,Y2O3为烧结助剂,N2气氛下在1650 ℃下热压烧结制备出了AlN-Al2O3复相陶瓷;采用X射线衍射、扫描电子显微镜和透射电子显微镜等对复相材料的相组成、显微结构进行表征.研究了Al2O3加入量对AlN-Al2O3复相材料的强度、热导率和介电性能的影响.结果表明,Al2O3加入量的增加可促进材料的烧结致密化和抑制AlN基体晶粒的生长.Al2O3含量为20 wt;和30 wt;时可制得致密的AlN-Al2O3复相陶瓷.Al2O3利用其高强度和弥散强化作用对AlN基体起到了明显的增强效果.随着Al2O3加入量的增加,试样的抗弯强度显著提高,热导率和介电性能也得到改善.加入30 wt; Al2O3的复相陶瓷的抗弯强度和热导率达到最大值457 Mpa和57 W/(m·K),介电常数和介电损耗达到最低值9.32和2.6×10-4.当Al2O3含量达到40 wt;以后,材料中部分AlN与Al2O3反应生成AlON,从而使材料的抗弯强度、热导率和介电性能又明显下降.     

Nb2O5掺杂对Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3陶瓷组织与性能的影响

采用固相烧结法制备Nb2O5掺杂的Pb(Mg1/3Nb2/3) O3-PbZrO3-PbTiO3+ 0.5mol; ZnO(PMN-PZT)压电陶瓷,研究了不同Nb2O5掺杂量对材料结构及压电介电性能的影响.实验结果表明,随着Nb2O5掺杂量的增加(0～1 mol;),PMN-PZT陶瓷的晶界强度提高,断裂模式由沿晶断裂逐渐转变为穿晶断裂,而且陶瓷的压电介电性能升高.当Nb2O5掺杂量为1mol;时,1250℃烧结的陶瓷样品性能参数为:d33=430 pC/N,Qm=60,kp=0.52,kt=0.38,εr=3620,tanδ=0.017.     

Al2O3掺杂对微波介质陶瓷Ca0.16Sr0.04Li0.4Nd0.4TiO3烧结特性和微波介电性能的影响

采用固相反应法在1300℃烧结4h得到了致密的具有钙钛矿结构的Ca0.16Sr0.04Li0.4Nd0.4TiO3微波介质陶瓷.通过X射线衍射仪、扫瞄电子显微镜和矢量网络分析仪系统的研究了不同含量Al2O3掺杂对Ca0.16Sr0.04Li0.4Nd0.4TiO3(CSLNT)陶瓷的烧结行为、晶体结构、显微形貌以及微波介电性能的影响.结果表明,对于CSLNT+ xwt;Al2O3陶瓷,随着Al2O3掺杂量的增加,介电常数(εr)有轻微的降低,而温度系数(τf)有所增加;由于第二相的出现导致了品质因子(Q·f)先增后减.当Al2O3掺杂量为2wt;时,其介电性能最佳的致密化烧结温度为1200℃,此时具有最佳的微波介电性能:εr=112.6,Q·f=1698 GHz和τf=31.9 ppm/℃.     

La-Mn共掺杂的钛酸钡陶瓷还原再氧化研究

以MnO2为受主,La2O3为施主,采用传统高温固相法对钛酸钡陶瓷进行掺杂,并对还原气氛下烧结的样品分别在900 ℃和1000 ℃的温度下进行再氧化处理.采用XRD和电性能测试研究了镧锰共掺杂和再氧化工艺对于钛酸钡陶瓷阻温特性及微观结构的影响.结果表明:钛酸钡陶瓷的阻温特性与施主、受主的掺杂比例和烧结气氛有关;与在空气下烧结相比,在还原气氛下烧结能明显的提高施主掺杂的临界浓度,同时随着再氧化温度从900 ℃提高到1000 ℃,PTC效应明显增强.BaTiO3晶粒尺寸随着施主掺杂浓度的提高而变小.Mn离子的掺入使钛酸钡晶格结构更为紧密,阻碍了晶格内部氧离子向外部的扩散,导致了明显的PTC效应.     

Fe2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3无铅压电陶瓷的制备与性能

采用固相合成法制备了Fe2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(简称BCZT)无铅压电陶瓷。借助XRD、SEM、阻抗分析仪等对该陶瓷的相组成、显微结构以及压电和介电性能进行了研究。结果表明,Fe2O3掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度Tc从85℃提高到95℃;当Fe2O3掺杂为0.02wt%～0.1wt%时,陶瓷样品均为ABO3型钙钛矿结构;少量Fe2O3掺杂促进了陶瓷晶粒的生长,但随着Fe2O3掺杂量进一步增加,陶瓷晶粒随之细化;当Fe2O3掺杂量为0.04wt%时,陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因数Qm、介电损耗tanδ和介电常数εr分别为400 pC/N,0.40,51,0.023和3482。     

(Nb2O5)1-x(TiO2)x陶瓷的制备及其介电性能的研究

我们采用传统固态反应方法烧结制备(Nb2O5)1-x(TiO2)x陶瓷,给出了掺杂量x从0.01到0.13陶瓷的介电性能.在本工艺条件下,所有样品的介电系数均大于120.当样品中TiO2的掺杂量为5mol;时,陶瓷的介电性能最佳:介电系数和损耗分别为217和0.078.XRD测试实验给出,当x≤0.05时,陶瓷的主要相结构为Nb2O5;当x≥0.07时,主相为TiNb24O62.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.