Response of a Bloch oscillator to a THz-field

In this paper we report on the observation of response of a Bloch oscillator at room temperature to a THz-field of a frequency larger than the Bloch frequency. The oscillator consisted of a semiconductor superlattice structure, with an applied dc voltage giving rise to a dc electron drift current. Submitting the oscillator to a field at a frequency of 3.3 THz caused a sizeable reduction of the current; the THz-field was generated by use of intense THz-radiation pulses focused on an antenna coupled to the superlattice. We attribute the THz-field induced reduction of the current to a frequency modulation of the Bloch oscillations of electrons at the frequency of the THz-field, leading to reduction of the electron drift velocity and, consequently, of the current.     

Balance equations for electron transport in an arbitrary energy band driven by an intense terahertz field. Application to superlattice miniband transport

We suggest a balance-equation approach to hot-electron transport in a single arbitrary energy band subject to an intense radiation field of terahertz (THz) frequency, including all the multiphoton emission and absorption processes and taking account of realistic scatterings due to impurities and phonons. This approach, which allows one to calculate THz-driving, time-averaging transport based on a set of time-independent equations, provides a convenient method to study the effect of an intense THz electric field on carrier transport in a nonparabolic energy band. As an example, these fully three-dimensional, acceleration- and energy-balance equations are applied to the discussion of superlattice miniband transport at lattice temperature T=77 and 300 K driven by the THz radiation field of varying strengths. It is shown that the current through a dc biased miniband superlattice is greatly reduced by the irradiation of an intense THz electric field. Received: 23 January 1998 / Revised: 31 March 1998 / Accepted: 20 April 1998     

Hot-electron transport in graphene driven by intense terahertz fields

We investigate transport properties of graphene driven by intense terahertz (THz) fields, considering impurity, acoustic-phonon and optical phonon scatterings. The time evolutions of drift velocity and electron temperature are analyzed and the phase shift and distortion of drift velocity are demonstrated. We also examine the terahertz photoconductivity, finding that the suppression of linear dc mobility is greatly enhanced with decreasing frequency of the radiation.     

Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.     

Thermal analysis of intense femtosecond laser ablation of aluminum

This paper numerically simulates the process of ablation of an aluminum target by an intense femtosecond laser with a fluence of 40 J/cm 2 based on the two-temperature equation,and obtains the evolution of the free electron temperature and lattice temperature over a large temporal and depth range,for the first time. By investigating the temporal evolution curves of the free electron temperature and lattice temperature at three representative depths of 0,100 nm and 500 nm,it reveals different characteristics and mechanisms of the free electron temperature evolution at different depths. The results show that,in the intense femtosecond laser ablation of aluminum,the material ablation is mainly induced by the thermal conduction of free electrons,instead of the direct absorption of the laser energy; in addition,the thermal conduction of free electrons and the coupling effect between electrons and lattice will induce the temperature of free electrons deep inside the target to experience a process from increase to decrease and finally to increase again.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

太赫兹量子级联激光器中有源区上激发态电子向高能级泄漏的研究

利用热力学统计理论和激光器输出特性理论,建立了太赫兹量子级联激光器(THz QCL)有源区中上激发态电子往更高能级电子态泄漏的计算模型,以输出功率度量电子泄漏程度研究分析了晶格温度和量子阱势垒高度对电子泄漏的影响.数值仿真结果表明,晶格温度上升会加剧电子泄漏,并且电子从上激发态泄漏到束缚态的数量大于泄漏到阱外连续态,同时温度的上升也会降低激光输出功率.增加量子阱势垒高度能抑制电子泄漏,并且有源区量子阱结构中存在一个最优量子阱势垒高度. THz QCL经过最优量子阱势垒高度优化后,工作温度得到提升,其输出功率相比于以往的结果也有所提高.研究结果对优化THz QCL有源区结构、抑制电子泄漏和改善激光器输出特性有指导作用.     

Nonlinear terahertz response of -type GaAs

Excitation of an n-type GaAs layer by intense ultrashort terahertz pulses causes coherent emission at 2 THz. Phase-resolved nonlinear propagation experiments show a picosecond decay of the emitted field, despite the ultrafast carrier-carrier scattering at a sample temperature of 300 K. While the linear THz response is in agreement with the Drude response of free electrons, the nonlinear response is dominated by the super-radiant decay of optically inverted impurity transitions. A quantum mechanical discrete state model using the potential of the disordered impurities accounts for all experimental observations.     

Observation of frequency-locked coherent terahertz Smith-Purcell radiation

We report the observation of enhanced coherent Smith-Purcell radiation (SPR) at terahertz (THz) frequencies from a train of picosecond bunches of 15 MeV electrons passing above a grating. SPR is more intense than other sources, such as transition radiation, by a factor of Ng, the number of grating periods. For electron bunches that are short compared with the radiation wavelength, coherent emission occurs, enhanced by a factor of Ne, the number of electrons in the bunch. The electron beam consists of a train of Nb bunches, giving an energy density spectrum restricted to harmonics of the 17 GHz bunch train frequency, with an increased energy density at these frequencies by a factor of Nb. We report the first observation of SPR displaying all three of these enhancements, NgNeNb. This powerful SPR THz radiation can be detected with a high signal to noise ratio by a heterodyne receiver.     

Lattice deformation from interaction with electrons heated by an ultrashort laser pulse

We propose a model describing the destruction of metals under ultrashort intense laser pulses when heated electrons affect the lattice through the direct electron-phonon interaction. The metal consists of hot electrons and a cool lattice. The lattice deformation is estimated immediately after the laser pulse up to the electron temperature relaxation time. The hot electrons are described with help of the Boltzmann and heat conduction equations. We use an equation of motion for the lattice displacements with the electron force included. Estimates of the lattice deformation show that the ablation regime can be achieved. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 195–199 (10 August 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields

We report an experimental study indicating ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice under the action of a THz field. Our experiment was performed for an InGaAs/InAlAs superlattice with the conduction electrons undergoing miniband transport. We applied to a superlattice a dc bias that was slightly smaller than a critical bias necessary for the formation of space-charge domains caused by a static negative differential conductivity. Additionally subjecting the superlattice to a strong THz field, resulted in a dc transport governed by the formation of domains if the frequency of the field was smaller than an upper frequency limit (~3 THz). From this frequency limit for the creation and annihilation of domains we determined the characteristic time of the domain buildup. Our analysis shows that the buildup time of domains in a wide miniband and heavily doped superlattice is limited by the relaxation time due to scattering of the miniband electrons at polar optic phonons. Our results are of importance for both an understanding of ultrafast dynamics of pattern formation in nanostructures and the development of THz electronic devices.Received: 25 March 2004, Published online: 23 July 2004PACS: 72.20.Ht High-field and nonlinear effects - 72.30. + q High-frequency effects; plasma effects - 73.21.Cd SuperlatticesK.N. Alekseev: Permanent address: Department of Physical Sciences, P.O. Box 3000, University of Oulu FIN-90014, Finland.     

Effects of Screening and Finite Phonon Energy on the Transport in Quantized Layers in Compound Semiconductors

Analytical expressions for the momentum relaxation times of the conduction electrons in a non-degenerate two dimensional electron gas in the surface of a compound semiconductor have been obtained for interactions with the piezoelectric and deformation potential acoustic phonons taking due account of the screening of the perturbing potential under the the condition of low lattice temperature when the phonon energy cannot be neglected in comparison to the average thermal energy of the electrons and for that matter the equipartition approximation for the phonon distribution is hardly valid. The relaxation times calculated for inversion layers in GaAs and ZnO are found to depend upon the carrier energy, the lattice temperature and the impurity concentration in rather complex manners which are significantly different from what follows from the traditional approach of either neglecting the phonon energy or disregarding the process of screening. It is seen how the finite value of the phonon energy and the screening of the perturbing potential change the mobility characteristics significantly at the low lattice temperatures. The temperature dependence of the zero field mobility that one obtains using the relaxation times calculated here is quite different from the traditional laws.     

Electron-lattice kinetics of metals heated by ultrashort laser pulses

We propose a kinetic model of transient nonequilibrium phenomena in metals exposed to ultrashort laser pulses when heated electrons affect the lattice through direct electron-phonon interaction. This model describes the destruction of a metal under intense laser pumping. We derive the system of equations for the metal, which consists of hot electrons and a cold lattice. Hot electrons are described with the help of the Boltzmann equation and equation of thermoconductivity. We use the equations of motion for lattice displacements with the electron force included. The lattice deformation is estimated immediately after the laser pulse up to the time of electron temperature relaxation. An estimate shows that the ablation regime can be achieved. Zh. éksp. Teor. Fiz. 115, 149–157 (January 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

Investigation of hot electrons and hot phonons generated within an AlN/GaN high electron mobility transistor

We review our recent results obtained on an AlN/GaN-based high-electron-mobility transistor. The temperature of the electrons drifting under a relatively-high electric field is significantly higher than the lattice temperature (i.e., the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-optical phonons. By fitting electric field vs. electron temperature deduced from the measurements of photoluminescence spectra to a theoretical model, we have deduced the longitudinal-optical-phonon emission time for each electron is to be on the order of 100 fs. We have also measured the decay time constant for LO phonons to be about 4.2 ps. An electric field present in a GaN/AlN heterostructure can bring both the first-order and second-order Raman scattering processes into strong resonances. The resonant Stokes and anti-Stokes Raman scattering results in the increase and decrease of non-equilibrium longitudinal-optical phonon temperatures, respectively. Moreover, the phonon temperature measured from the Raman scattering is increased with an applied electric field at a much higher rate than the lattice temperature due to the presence of field-induced non-equilibrium longitudinal-optical phonons.     

Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells

Transport properties of the electrons itinerant two dimensionality in a square quantum well of In_0.53Ga_0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Theory of parametric amplification in superlattices

We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. We show that Bragg reflections in miniband result in a parametric resonance which is detectable using ac probe field. We establish theoretical feasibility of phase-sensitive THz amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. This prevents a formation of destructive domains of high electric field inside the superlattice.     

Terahertz absorption by electrons and confined acoustic phonons in free-standing quantum wells

The acoustic phonon confinement in a free-standing quantum well (FSQW) results in an acoustic phonon energy quantization. Typical quantization energies are in the terahertz frequency range. Free electrons may absorb electromagnetic waves in this frequency range if they emit or absorb acoustic phonons. Therefore, the terahertz absorption reveals the characteristic features of the acoustic phonon spectrum in free-standing structures. We have calculated the absorption coefficient of an electromagnetic wave by free electrons in a FSQW in the terahertz frequency range. We took into account a time dependent electric field, an exact form of the acoustic phonon spectrum and eigenmodes, and electron interactions with confined acoustic phonons through the deformation potential. We demonstrate numerical results for GaAs FSQW of width 100 Å at low lattice temperatures in the frequency range 0.1-1 THz. The absorption coefficient exhibits several structures at frequencies corresponding to the lowest acoustic phonon modes. These features occur due to absorption of photons by electrons, which is accompanied by the emission of corresponding acoustic phonons.     

The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure

We report the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental mobility of about at 3.8 K remains almost constant up to lattice temperature , it then decreases rapidly down to about at . The results are discussed using a theoretical model that takes into account the most important scattering mechanisms contributing to determine the mobility of electrons in 2DEG. We show that the polar optical phonon scattering is the dominant mechanism at high temperatures and the acoustic deformation potential and piezoelectric scatterings are dominant at the intermediate temperatures. At low temperatures, the Hall mobility is confined by both the interface roughness (IFR) and ionised impurity scattering. The correlation length (Λ) and lateral size (Δ) of roughness at the GaN/AlGaN heterointerface have been determined by fitting best to our low-temperature experimental data.     

Terahertz conductivity and possible BLOCH gain in semiconductor superlattices

We have investigated terahertz emission due to dynamical electron transport in wide-miniband GaAs/Al(0.3)Ga0.7As superlattices. By noting that the time-domain THz emission spectroscopy inherently measures the step-response of the electron system to the bias electric field, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit to the THz gain for the samples studied here.     

Electron drift velocity and mobility in graphene

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are sensitive to the electron density. These findings could be employed for the application of graphene for high-field nano-electronic devices.