Production of 35S for a liquid semiconductor betavoltaic

The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and is chemically compatible with known liquid semiconductor media.     

Photocatalytic activity enhanced by plasmonic resonant energy transfer from metal to semiconductor

Plasmonic metal nanostructures have been incorporated into semiconductors to enhance the solar-light harvesting and the energy-conversion efficiency. So far the mechanism of energy transfer from the plasmonic metal to semiconductors remains unclear. Herein the underlying plasmonic energy-transfer mechanism is unambiguously determined in Au@SiO(2)@Cu(2)O sandwich nanostructures by transient-absorption and photocatalysis action spectrum measurement. The gold core converts the energy of incident photons into localized surface plasmon resonance oscillations and transfers the plasmonic energy to the Cu(2)O semiconductor shell via resonant energy transfer (RET). RET generates electron-hole pairs in the semiconductor by the dipole-dipole interaction between the plasmonic metal (donor) and semiconductor (acceptor), which greatly enhances the visible-light photocatalytic activity as compared to the semiconductor alone. RET from a plasmonic metal to a semiconductor is a viable and efficient mechanism that can be used to guide the design of photocatalysts, photovoltaics, and other optoelectronic devices.     

Combustion synthesis and characterization of nanocrystalline WO3

The energy payback time associated with the semiconductor active material is an important parameter in a photovoltaic solar cell device. Thus lowering the energy requirements for the semiconductor synthesis step or making it more energy-efficient is critical toward making the overall device economics more competitive relative to other nonpolluting energy options. In this communication, combustion synthesis is demonstrated to be a versatile and energy-efficient method for preparing inorganic oxide semiconductors such as tungsten trioxide (WO3) for photovoltaic or photocatalytic solar energy conversion. The energy efficiency of combustion synthesis accrues from the fact that high process temperatures are self-sustained by the exothermicity of the combustion process, and the only external thermal energy input needed is for dehydration of the fuel/oxidizer precursor mixture and bringing it to ignition. Importantly, we show that, in this approach, it is also possible to tune the optical characteristics of the oxide semiconductor (i.e., shift its response toward the visible range of the electromagnetic spectrum) in situ by doping the host semiconductor during the formative stage itself. As a bonus, the resultant material shows enhanced surface properties such as markedly improved organic dye uptake relative to benchmark samples obtained from commercial sources. Finally, this synthesis approach requires only very simple equipment, a feature that it shares with other "mild" inorganic semiconductor synthesis routes such as sol-gel chemistry, chemical bath deposition, and electrodeposition. The present study constitutes the first use of combustion synthesis for preparing WO3 powder comprising nanosized particles.     

半导体电极的平带电位

平带电位(E_(fb))是半导体/电解质溶液体系的重要概念,是半导体电极在平带状态时的电极电位,它是半导体电极特有的可以实验测定的物理量。利用Mott-Schottky曲线以及光电化学等方法可以测定平带电位,判断半导体的类型以及估算半导体的载流子浓度,其数值可用于推测半导体的能级结构,确定半导体材料的价带或导带能级位置。这对于与太阳能开发利用相关的半导体光催化和光电化学研究都是非常重要的。本文分析了半导体电极的能带弯曲及影响因素,首次提出半导体界面层内费米能级弯曲,阐明半导体电极平带电位的物理意义及其测定方法,以帮助初学者理解和应用平带电位。     

Electron transfer processs with excited molecules at semiconductor electrodes

In the first part of the paper, energy levels used in solid-state physics, in electrochemistry and in photochemistry are introduced and combined in a l- electron energy concept. This is also applied to excited molecules being adsorbed at semiconductor electrodes. On the basis of this concept, theoretical models concerning electron-transfer processes between molecules in their ground and excited state and semiconductor electrodes are then developed. In the last part of the paper, a number of typical results are presented and discussed. It is shown that the primary step is an electron-transfer reaction between an excited molecule and the semiconductor, whereas energy transfer plays only a minor role, which leads mostly to quenching. Most processes can be interpreted on the basis of the theoretical model mentioned above. Various phenomena, such as quantum yield, supersensitization, quenching, and influence of pH and doping of the semiconductor are discussed in detail. Finally, a brief outlook at the applications in solar-energy conversion systems is given.     

Luminescent energy transfer between cadmium telluride nanoparticle and lanthanide(III) chelate in competitive bioaffinity assays of biotin and estradiol

Fluorescence resonance energy transfer has been studied between lanthanide(III) chelates as donors and protein-coupled CdTe semiconductor nanoparticles as acceptors. Wide excitation spectra and large Stokes shift of semiconductor nanoparticles and timeresolved fluorescence detection were shown to provide a combination for successful energy transfer assay. Different intrinsically fluorescent europium(III) and terbium(III) chelates coupled to single biotin molecules were studied for optimal energy transfer with streptavidin labeled semiconductor nanoparticles. No significant differences between the studied chelates were observed. The strength of the methodology was demonstrated in a clinically relevant competitive and separation-free immunoassay of estradiol, where subnanomolar limit of detection was achieved with the coefficient of variation 2-11%. The data suggested that relatively short distance was needed to obtain adequate energy transfer. Therefore, biomolecules were coupled onto the semiconductor nanoparticles without any spacers.     

Photo-assisted electron injection at a semiconductor—NH3 interface

Illumination of a p-type semiconductor—NH₃ interface (or heterojunction) with photons of energy greater than the semiconductor band gap causes electrons to be injected into the NH₃. There is no hole injection at a n-type electrode. Suggestions are made for the required energy levels in the liquid.     

嵌碳TiO_2的快速制备及其光催化制氢特性——介绍一个材料综合实验

以TiO_2为代表的半导体光催化剂通过对太阳能的利用,有助于解决当前制约人类社会发展的能源危机与环境污染问题。本实验采用新颖的火焰辅助热解法一步制备出锐钛矿相嵌碳TiO_2微球,该制备方法可避免热处理,实验过程简单快速、无液体废弃物,绿色便捷,利用气相色谱仪测定样品的光催化分解水的产氢量。通过本实验,学生可全面了解半导体光催化剂的光催化原理、制备、表征、功能测试,同时帮助学生认识太阳能、氢能等新能源研究概况,渗透环保的理念。     

Photo-responsive metal/semiconductor hybrid nanostructure:A promising electrocatalyst for solar light enhanced fuel cell reaction

Direct alcohol fuel cells(DAFCs) have received wide attention as a new type of clean energy device because of their high energy conversion efficiency,portability,non-toxicity and pollution-free.Anode catalysts are the key factors affecting the performance of DAFCs.Recently studies show that using the optical activity of semiconductor materials as the carriers of traditional precious metal electrocatalysts,under the illumination of light sources,can greatly improve the electrocatalytic activity and stability of electrodes.In this review,the research progress of photo-responsive metal/semiconductor hybrids as the electrocatalysts for DAFCs in recent years is summarized,including:(1) Mechanism and advantages of photo-assistant electrochemical alcohol oxidation reaction,(2) me tal/semiconductor electrocatalyst for the different type of fuel cell reactions,(3) different kind of metals in photo-responsive metal/semiconductor hybrid nanostructure,(4) the personal prospects of the photo-responsive metal/semiconductor electrode for future application in DAFCs.     

Evaluation of scintillators and semiconductor detectors to image three-photon positron annihilation for positron emission tomography

Positron emission tomography (PET) is rapidly becoming the main nuclear imaging modality of the present century. The future of PET instrumentation relies on semiconductor detectors because of their excellent characteristics. Three-photon positron annihilation has been recently investigated as a novel imaging modality, which demands the crucial high energy resolution of semiconductor detector. In this work the evaluation of the NaI(Tl) scintillator and HPGe and CdZTe semiconductor detectors, to construct a simple three-photon positron annihilation scanner has been explored. The effect of detector and scanner size on spatial resolution (FWHM) is discussed. The characteristics: energy resolution versus count rate and point-spread function of the three-photon positron annihilation image profile from triple coincidence measurements were investigated.     

Femtosecond Time-Resolved Spectroscopic Photoemission Electron Microscopy for Probing Ultrafast Carrier Dynamics in Heterojunctions

The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a timeresolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicron/nanometer spatial scales and ultrafast time scales.     

Asymmetric Covalent Triazine Framework for Enhanced Visible‐Light Photoredox Catalysis via Energy Transfer Cascade

Complex multiple‐component semiconductor photocatalysts can be constructed that display enhanced catalytic efficiency via multiple charge and energy transfer, mimicking photosystems in nature. In contrast, the efficiency of single‐component semiconductor photocatalysts is usually limited due to the fast recombination of the photogenerated excitons. Here, we report the design of an asymmetric covalent triazine framework as an efficient organic single‐component semiconductor photocatalyst. Four different molecular donor–acceptor domains are obtained within the network, leading to enhanced photogenerated charge separation via an intramolecular energy transfer cascade. The photocatalytic efficiency of the asymmetric covalent triazine framework is superior to that of its symmetric counterparts; this was demonstrated by the visible‐light‐driven formation of benzophosphole oxides from diphenylphosphine oxide and diphenylacetylene.     

Photocatalytic Enhancement Strategy with the Introduction of Metallic Bi: A Review on Bi/Semiconductor Photocatalysts

Semiconductor photocatalysis has great potential in the fields of solar fuel production and environmental remediation. Nevertheless, the photocatalytic efficiency still constrains its practical production applications. The development of new semiconductor materials is essential to enhance the solar energy conversion efficiency of photocatalytic systems. Recently, the research on enhancing the photocatalytic performance of semiconductors by introducing bismuth (Bi) has attracted widespread attention. In this review, we briefly overview the main synthesis methods of Bi/semiconductor photocatalysts and summarize the control of the micromorphology of Bi in Bi/semiconductors and the key role of Bi in the catalytic system. In addition, the promising applications of Bi/semiconductors in photocatalysis, such as pollutant degradation, sterilization, water separation, CO2 reduction, and N2 fixation, are outlined. Finally, an outlook on the challenges and future research directions of Bi/semiconductor photocatalysts is given. We aim to offer guidance for the rational design and synthesis of high-efficiency Bi/semiconductor photocatalysts for energy and environmental applications.     

Oxide semiconductor materials for solar light energy utilization

Two approaches for harvesting solar light energy effectively using oxide semiconductor materials are introduced. The one is water splitting using new types of oxide semiconductor photocatalyst systems. By Na₂CO₃ addition method, it was firstly demonstrated that water is decomposed to H₂ and O₂ steadily and stoichiometrically using NiO/TiO₂ photocatalyst under the solar light. A new two-step water splitting system using photocatalysis is also introduced. The other is dyesensitized oxide semiconductor solar cells in order to convert visible light energy to electricity. Combinations of various types of oxide semiconductors and organic dyes, such as Eosin-Y, suggests the appearance of promising and cheap solar cells.     

Development and applications of time-of-flight neutron depth profiling (TOF-NDP)

Neutron depth profiling (NDP) is a surface analysis technique based on the irradiation of samples with thermal or sub-thermal neutrons, and subsequent release of charged particles. Emitted particles rapidly lose kinetic energy primarily through interactions with the electrons of the substrate material. The depth of the reaction site can be found by using stopping power correlations. In conventional NDP, particle residual energy is measured by using a silicon semiconductor detector. In time-of-flight NDP (TOF-NDP), the energy can be determined by particle flight time. Time measurement can be made more sensitively than the energy measurement. Silicon semiconductor detectors can be replaced by microchannel plates (MCP). In this study, TOF-NDP concept will be briefly explained; Penn State TOF-NDP facility will be introduced; preliminary measurements performed with an alpha-source will be presented.     

聚合物半导体光电转换的理论分析

导电聚合物半导体的最大特点是掺杂物在工作条件下可以移动。这类“可移动掺杂物”型半导体已被许多研究者用为光生伏打效应的材料, 目前所得到光电转换效率普遍较低。本文提出这类光电极的物理模型和数学模型, 并用数值解法解决了这个边界问题; 理论分析表明这类“可移动掺杂物”型半导体最大光电转换效率可以接近于传统无机半导体的光电转换效率; 数值解提出必须注意提高这类半导体的载流子迁移率和体内复合寿命。     

Molecular approaches to solar energy conversion with coordination compounds anchored to semiconductor surfaces

Strategies toward the realization of molecular control of interfacial charge transfer at nanocrystalline semiconductor interfaces are described. Light excitation of coordination compounds, based on (dpi)6 transition metals, anchored to wide band-gap semiconductors, such as TiO2, can initiate electron-transfer processes that ultimately reduce the semiconductor. Such photoinduced charge-separation processes are a key step for solar energy conversion. The thermodynamics and kinetic rate constants for three different interfacial charge separation mechanisms are discussed. Tuning the energetic position of the semiconductor conduction band relative to the molecular sensitizer has provided new insights into interfacial charge transfer. Supramolecular compounds that efficiently absorb light, promote interfacial electron transfer, and feature additional functions such as intramolecular electron transfer when bound to semiconductor surfaces have also been studied. New approaches for enhancing charge-separation lifetimes for solar energy conversion are presented.     

Effect of formulas of titanoxide compositions on the photovoltaic characteristics of solar cells

The effect the chemical composition of semiconductor titanium compositions (titanium pastes) has on the photovoltaic characteristics of dye-sensitized solar cells is investigated. It is established that the efficiency of solar energy conversion by a photovoltaic cell made with Ti-nanooxide D paste is 5.3%, while that of one made with Degussa P25 paste is 4.7%. These data correlate with the specific surface and sorption ability of semiconductor films.     

太阳能光催化制氢研究进展

随着人类社会的快速发展和传统能源的急剧消耗,能源紧缺和环境污染已经成为制约人类社会可持续发展的重要因素,构建清洁的环境友好的可再生新能源体系是当前各国高度关注的焦点和重大战略.在众多绿色环保、可持续新能源选项中,半导体光催化制氢因其可利用清洁可再生的太阳能制取高效清洁氢能,有望完全解决能源紧缺和环境污染问题,成为最有应用前景的技术之一. 本文通过概述半导体光催化制氢原理、半导体光电化学及光电稳定性、半导体光催化制氢效率,重点介绍半导体光催化剂、光生电荷分离及光催化制氢体系等方面若干新进展,并对太阳能光催化制氢技术的发展加以评述和展望.     

Optoelectronic properties analysis of Ti-substituted GaP

A study using first principles of the electronic and optical properties of materials derived from a GaP host semiconductor where one Ti atom is substituted for one of the eight P atoms is presented. This material has a metallic intermediate band sandwiched between the valence and conduction bands of the host semiconductor for 0 < or = U < or = 8 eV where U is the Hubbard parameter. The potential of these materials is that when they are used as an absorber of photons in solar cells, the efficiency is increased significantly with respect to that of the host semiconductor. The results show that the main contribution to the intermediate band is the Ti atom and that this material can absorb photons of lower energy than that of the host semiconductor. The efficiency is increased with respect to that of the host semiconductor mainly because of the absorption from the intermediate to conduction band. As U increases, the contribution of the Ti-d orbitals to the intermediate band varies, increasing the d(z2) character at the bottom of the intermediate band.