ATR-FTIR Study of Si(110) Surface Hydrogenated in NH4F-Based Mixtures

RCA (Radio Corporation of America) cleaning has been the important and critical step in semiconductor manufacturing for more than 30 years^[1]. As the electronics devices are shrinking and gate oxide is getting thinner, stringent requirements on metallic impurities,organic contamination and surface roughness on silicon wafer after wet chemical cleaning have attracted more attention in the mechanism of wet etching processes on Si(111) and Si(100) surfaces^[2=11]. In the past few years wet chemical and electrochemical etching of Si(110) in NH₄F solutions has been studied by using scanning tunneling microscopy (STM)^[12] and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR)^[13-14]. In the present work, we extend our study to Si(110) surface in NH₄F/HCl mixtures by using polarized attenuated total reflection FTIR (ATR-FTIR). We have compared the ex-situ ATR-FTIR results on Si(110) in various NH₄F/HCl solutions using Ge prism. Effects of potential on hydrogen-terminated structures on Si(110) surfaces have been investigated by employing in-situ electrochemical ATR-FTIR with double side polished single crystal silicon as a prism. Our ATR-FTIR spectra are correlated with the results obtained with in-situ STM.     

Ultra-clean Si(111) and Si(001) Surfaces Prepared by Advanced Wet Chemical Cleaning

Wet chemical cleaning of silicon is a critical step, e.g., pre-gate clean, in the semiconductor manufacturing^[1]. For example, pre-gate oxide cleaning demands ultra-clean silicon surface with least surface roughness. It is well known that metallic infinities and roughness cause the lower breakdown voltage in gate dielectric^[2]. It has stringent requirements for ultra-clean and atomically flat silicon surface as the thickness of gate oxide is decreasing. In the present work, we have extended our study on Si(100) surface13] and extensively investigated wet chemical cleaning of Si(111) and Si(100) surfaces in NH₄F-based solutions by using scanning tunneling microscopy (STM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and total reflection X-ray fluorescence spectrometry (TXRF). Surface roughness, organic contamination, metallic impurities and surface termination on the silicon surfaces after wet chemical cleaning with various NH₄F-based solutions have been determined and compared with those treated with RCA cleans, HF solutions and other industrially used solutions. Our results indicate that ultra-clean and smooth Si(111) and Si(001) surfaces are obtained by treatment with NH4F-based solutions.     

Characterization of crystal faces of polycrystalline HFCVD diamond films by STM/STS

Among the numerous techniques available for the characterization of diamond films scanning tunnelling microscopy (STM) in combination with spectroscopy (STS) provides information about the morphology and electronic surface properties down to the atomic scale. Here results of STM/STS obtained on diamond films are reported. 0.5 to 1.25 μm thick films have been grown on silicon substrates by hot filament chemical vapour deposition (HFCVD) by variable CH₄/H₂ mixtures in the range of 0.5% to 3% CH₄. Morphological features of diamond crystallites were studied in detail by STM. A distinct increase of the surface roughness of (111) crystal faces with increasing CH₄ concentration (from 0.5% to 3%) was found. For a CH₄ concentration of 3% (100) faces were smoother than (111) faces. STS revealed significant differences in the tunneling current/voltage (I/V)-characteristics between (111) and (100) crystal surfaces. For (111) surfaces distinct changes in the I/V-characteristics depending on the CH₄ concentration were observed: The I/V-characteristics change and the conductivity increases raising the CH₄ concentration from 0.5% to 3%. This effect is explained with increasing formation of non-diamond carbon (NDC) on (111) surfaces for higher CH₄ concentrations. Thus NDC is also responsible for the enhanced surface roughness observed on (111) surfaces with increasing CH₄ concentrations.     

Synthesis, F,Te NMR Spectra and crystal structure of NBu4TeF5 and NH4TeF5 (NH4F)0.25 (‘(NH4)2TeF6’)

¹⁹F and ¹²⁵Te NMR in different organic solvents and X-Ray investigations NBu₄TeF₅ (I) and ‘(NH₄)₂TeF₆’ (II) show that TeF₅⁻ anion in (I) both solution and the solid state has a square pyramidal structure. No octahedral arrangement of fluorine was found in (II). This compound consists of NH₄TeF₅ and NH₄F molecules, the NH₄F being in channels between the layers of NH₄TeF₅.     

铜改性凹凸棒土催化剂对Hg0及NH3的氧化性能研究

采用改进湿式浸渍法制备了兼备汞氧化和氨氧化活性的铜改性凹凸棒土（Cu₃-ATP）催化剂，对其进行SEM、H₂-TPR和NH₃-TPD表征，并在150-400℃测试其汞氧化及氨氧化性能。结果表明，铜物种成功负载在ATP表面，显著提高了催化剂的氧化还原能力，增加了表面中强酸性位和部分强酸性位，从而有效促进Hg⁰和NH₃的氧化。HCl在Hg⁰的高效氧化中起重要作用，高温不利于Hg⁰氧化反应的进行，但能够促进NH₃的氧化。在350℃下，Cu₃-ATP对Hg⁰和NH₃的氧化效率均在90%以上。影响因素实验显示，高空速下NH₃对汞氧化反应有明显抑制作用，而低浓度Hg⁰及HCl对氨氧化活性无显著影响，当气体空速（GHSV）低于5×10⁴ h^-1时，Cu₃-ATP能够实现NH₃和Hg⁰的同时氧化。此外，汞的氧化反应具备良好的抗硫性和抗水性，而SO₂对氨氧化有一定抑制作用。     

Vibrational characterization and electronic properties of long range-ordered, ideally hydrogen-terminated Si(111)

The use of a well defined, long range ordered surface is of fundamental interest for the determination of surface-specific intrinsic physical parameters. Ideally hydrogen terminated Si(111) surfaces are prepared by wet chemical treatment in basic HF solutions. The mechanism of formation is based on preferential etching of defects, leading to an ideal hydrogen terminaison of the (111) plane, without any reconstruction and with a high degree of perfection. Infrared spectroscopy is used to probe the quality of the surfaces by quantifying the extent of the perfect domains.

High resolution photoemission spectroscopy of such highly homogeneous surfaces shows exceptional narrow features in both the valence band and the core level regions. The valence band levels and their dispersion are well described by first-principles calculations using a quasi particle self-energy approach within the Heidin's GW approximation.

Two surfaces core level states are evidenced, arising from the silicon surface atoms and the backbonds. A crystal field effect splits the surface Si 2_p3/2 component. Their position and relative intensity find a satisfactory agreement with recent calculations using first principles perturbation theory.     

UHV STM I(V) and XPS studies of aryl diazonium molecules assembled on Si(111)

Molecular layers formed from 4-trifluoromethylbenzenediazonium tetrafluoroborate and 4-Methylbenzenediazonium tetrafluoroborate have been assembled on H-passivated Si(111) and studied by UHV STM and XPS. STM imaging shows well-developed Si(111) step edges and terraces both on Si(111):H and Si(111) substrates covered with a molecular layer. STM I(V) data acquired at different tip-substrate separations reveals a factor of approximately 10 enhancement in current for positive bias voltage when current flows through the 4-trifluoromethyl molecule when compared to the 4-methyl variant. The observed current enhancement in I(V) can be understood by comparing the projected density of states of the two molecule-Si systems calculated using a density functional theory local density approximation after geometry optimization was performed via the conjugate gradient method. XPS data independently confirm that H-passivated Si(111) remains oxygen free for short exposures to ambient conditions and provide evidence that the molecules chemically react with the silicon surface.     

改性SCR催化剂对单质汞氧化性能的研究

在模拟SCR反应器烟气组分下,考察了过渡金属改性掺杂对SCR催化剂单质汞(Hg0)氧化性能的影响。采用N2吸附-脱附和X射线衍射(XRD)对催化剂理化性能进行表征。结果表明,金属改性掺杂减小了催化剂的比表面积和总孔容,但对催化剂的孔径分布没有太大的影响。XRD谱图中出现了微弱的过渡金属氧化物衍射峰。8%Ce/SCR和8%Cu/SCR催化剂表现出了相对稳定和高效的Hg~0氧化效率,而8%Co/SCR催化剂Hg~0氧化效率受温度影响较大。金属改性掺杂的催化剂在低NH_3和NO烟气组分中表现出较好的Hg~0氧化效率,当烟气组分中存在HCl时,促进更加明显;而当催化剂在高NH3和NO烟气组分条件下,即使有HCl的存在对Hg~0氧化效率影响也不大。     

Self-assembled Alkylation of Atomically Flat Hydrogen-terminated Silicon (111) Surface By Using Highly Polarized Fluoroalkylsilane

Hydrogen-terminated silicon surface is of technological importance to semiconductor processes such as pre-gate^[1]. Re-contamination and re-oxidation on silicon surface become more stringent issues in order to meet the requirements in the process for producing reduced size IC chips. The modification of silicon surfaces by various strategies has attracted more attention in the past few years^[2-4]. The frequently used techniques to attach functional groups to silicon surfaces are via chemical^[2], photochemical^[3] and electrochemical reactions^[4]. Various ways to attach monlayers to silicon surfaces has been reported, including alkylation of silicon with alkenes, alkyenes, aldehydes, alcohols and Grigard reagents under photoactivated or catalytic reactions. Particularly, porous silicon prepared by chemical or electrochemical treatments has been extensively studied. Preparation of passivated layers on porous silicon surfaces has disadvantages that the silicon surfaces are damaged by reactive agents during the reaction or become porous for attachment of molecules. Recently, self-assembled monolayer of alcohols on porous silicon was reported at modest heating without the aid of catalyst or photoexcitation or potential^[5]. In the paper, we report a novel method to attach highly polarized fluoroalkylsilane on atomically flat Si(111) surface at room temperature and to form a self-assembled monolayer to prevent the silicon surface from re-contamination and re-oxidation.     

Self-aligned Submonolayer Cobalt Silicide Formation Studied by Variable Temperature Scanning Tunneling Microscopy in UHV System

Epitaxial growth of defect free metal silicides with high thermal stability is important to ultra large scale integration devices (ULSI)^[1]. Cobalt silicide has been used as an interconnect in CMOS devices due to its low resistivity and good thermal stability^[2] and excellent lattice match between cobalt silicide and silicon^[3,4]. In the present work, we have investigated epitaxial growth of ultra-thin cobalt layer (ca. 10 Å) by electron beam evaporation of cobalt on Si(111) (7×7) surface followed by thermal annealing up to 700℃ in UHV system. The morphologies and the surface structures of epitaxial silicide formation were investigated by using scanning tunneling microscopy (STM). Adlayer structures of Co silicide after annealing were observed to coexist as the closely and loosely packed clusters at 230℃ separated by a boundary. A new structure with ring-like clusters has (l×l) configuration with 3.5 A spacing between hollows of vicinal clusters at 400℃. Si-rich CoSi₂ surfaces terminated by Si bilayers showed (2×2) structures after annealing at 480℃, in which Si-rich CoSi₂ clusters were observed to be very mobile at room temperature. As the surface was annealed to above 500℃, The domain island became regular triangles, where atomic resolution of the l×l surface of CoSi₂(111) were readily discernable. CoSi₂(111) surface is suggested to be terminated by a Si-bilayer.     

Polymer evolution of a sulfonated polysulfone membrane as a function of ion beam irradiation fluence

Ion beam irradiation was used to modify the surface of a sulfonated polysulfone water treatment membrane. A beam of 25 keV H⁺ ions with three irradiation fluences (1 × 10¹³ ions/cm², 5 × 10¹³ ions/cm², and 1 × 10¹⁴ ions/cm²) was used for membrane irradiation. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) analyses were performed on the virgin and irradiated membranes in order to determine the changes to chemical structure incurred by ion beam irradiation. The results show that some of the sulphonic and CH bonds were broken and new CS bonds were formed after irradiation. Atomic force microscope (AFM) analyses show that membrane roughness decreased after irradiation. A significant increase in flux after ion beam irradiation was also observed, while the amount of cake accumulation on the membrane was decreased after ion beam irradiation. Hydrophobicity, pore size distribution and selectivity of the membrane were not affected by ion beam irradiation.     

Formation, characterization, and chemistry of undecanoic acid-terminated silicon surfaces: patterning and immobilization of DNA

This paper describes a simple strategy for DNA immobilization on chemically modified and patterned silicon surfaces. The photochemical modification of hydrogen-terminated Si(111) with undecylenic acid leads to the formation of an organic monolayer covalently attached to the surface through Si-C bonds without detectable reaction of the carboxylic acid group, providing indirect support of a free radical mechanism. Chemical activation of the acid function was achieved by a simple chemical route using N-hydroxysuccinimide (NHS) in the presence of N-ethyl-N'-(3-dimethylaminopropyl) carbodiimide hydrochloride. Single strand DNA with a 5'-dodecylamine group was then coupled to the NHS-activated surface by amide bond formation. Using a previously reported chemical patterning approach, we have shown that DNA can be immobilized on silicon surfaces in spatially well-resolved domains. Methoxytetraethyleneglycolamine was used to inhibit nonspecific adsorption. The resulting DNA-modified surfaces have shown good specificity and chemical and thermal stability under hybridization conditions. The sequential reactions on the surface were monitored by ATR-FTIR, X-ray Photoelectron Spectroscopy, and fluorescence spectroscopy.     

纳米硅在含添加剂的高浓度电解液中循环特征及其表面协同成膜的研究

本文研究了在LiFSI-(PC)₃高浓度电解液中添加剂对于纳米硅材料的循环性能的影响,采用扫描电子显微镜、傅里叶变换红外光谱和X-射线光电子能谱分析了循环过程纳米硅材料及其电极的结构和表面SEI膜演化的特征. 结果表明,添加剂能够改善纳米硅材料的循环性能,在LiFSI-(PC)₃高浓度电解液中循环300周材料比容量为574.8 mAh·g^-1,而含有3%LiDFOB、3%FEC、3%TMSB的添加剂的高浓度电解液中,比容量分别为1142.9、1863.6和1852.2 mAh·g^-1. 作者分析认为,在LiFSI-(PC)₃浓溶液中LiFSI优先于PC在纳米硅表面发生成膜反应,形成的SEI膜由以无机物主导的内层膜和以有机物主导的外层膜组成,而在含添加剂的高浓度电解液中,添加剂和LiFSI协同参与SEI成膜反应,形成的内层膜能够减缓PC溶剂参与外层的成膜反应,由此形成的SEI膜能够抑制循环过程中SEI膜的过度生长,更好地抑制了纳米硅的粉化,纳米硅材料及其电极结构稳定性更好,材料表现出更好的循环性能.     

Ab initio calculations of the vibrational spectra of the ammonia and fluoramide complexes with HF

The structures, energetics, vibrational frequencies and IR intensities of the H₃N HF, H₃N F₂ and NH₂FHF (three isomers) complexes were examined using the self-consistent field method within the 6-311G^** basis set. The interaction energies were calculated using the MP2 approach. The results are compared with monomer calculations and experimental data. The complex NH₂FHF was found to exist in three forms: one with the HF molecule hydrogen bonded to the nitrogen lone pair of NH₂F (D₀ =7.403 kcal mol⁻¹), another a complex formed through the F atom lone pair (D₀=4.698 kcal mol⁻¹) and third a cyclic structure (D₀=5.644 kcal mol⁻¹).     

Free aluminium extraction from various reference materials and acid soils with relation to plant availability

The single extractions with 15 extractants (agents) (H₂O, KCl, NH₄Cl, NH₄F, CaCl₂, BaCl₂, CuCl₂, LaCl₃, Na₂S₂O₄, (NH₄)₂C₂O₄, Na₄P₂O₇, NTA, EDTA, DTPA, HCl), the optimised BCR (Community Bureau of Reference) three-step sequential extraction procedure (SEP) and the solid phase extraction (SPE) by the chelating ion-exchanger Iontosorb Salicyl (cellulose resin containing covalently bound salicylic acid functional groups) were used for the partitioning of Al in very acid soil samples taken from an area influenced by acid mine solutions. The precision, accuracy and repeatibility for all steps of the optimised BCR SEP were checked on the various reference materials (CRM 483 sewage sludge amended soil, CRM BCR 701 freshwater sediment, SRM 2710 and SRM 2711 Montana soils). Also the new indicative values of the optimised BCR SEP fractional Al concentrations were obtained for these reference materials. The aluminium amounts obtained by the used extraction procedures were valuated and discussed from the aspect of the Al concentration in the plants (grass) growing on the same studied soils. The aluminium toxicity indexes (ATI) calculated for the studied soils, the BaCl₂ and acetic acid soil extracts and the grass stems and roots were used for the assessment of the Al toxicity to the plants. The ATI value was defined as the ratio of the nutrient cations (Ca, Mg, K, Na) concentration sum to the Al concentration. The flame atomic absorption spectrometry (LOQ = 0.2 mg l⁻¹) and the inductively coupled plasma optical emission spectrometry (LOQ = 0.03 mg l⁻¹) were used for the aluminium quantification.     

Ca掺杂的CeO2模型催化剂的形貌和电子结构及其与CO2分子的相互作用

利用扫描隧道显微镜、X射线光电子能谱和同步辐射光电子能谱研究了CeO₂(111),部分还原的CeO_2-x(111) (0＜x＜0.5)以及Ca掺杂的CeO₂模型催化剂的形貌、电子结构以及它们与CO₂分子间的相互作用。CeO₂(111)和部分还原的CeO_2-x(111)薄膜外延生长于Cu(111)单晶表面。不同Ca掺杂的CeO₂薄膜是通过在CeO₂(111)薄膜表面室温物理沉积金属Ca及随后真空退火到不同温度而得到的。不同的制备过程导致样品具有不同的表面组成,化学态和结构。CO₂吸附到CeO₂和部分还原的CeO_2-x表面后导致表面羧酸盐的形成。此外,相比于CeO₂表面,羧酸盐物种更易在部分还原的CeO_2-x表面生成,而且更加稳定。而在Ca掺杂的氧化铈薄膜表面,Ca²⁺离子的存在有利于CO₂的吸附,且探测到碳酸盐物种的形成。     

Effects of cleaning procedures of silica wafers on their friction characteristics

Silicon wafers with thermal silicon oxide layers were cleaned and hydrophilized by three different methods: (1) the remote chemical analysis (RCA) wet cleaning by use of ammonia and hydrogen peroxide mixture solutions, (2) water-vapor plasma cleaning, and (3) UV/ozone combined cleaning. All procedures were found to remove effectively organic contaminations on wafers and gave identical characteristics of the contact angle, the surface roughness and the normal force interactions, measured by atomic force microscopy (AFM). However, it is found that wafers cleaned by the RCA method have several times larger friction coefficients than those cleaned by the plasma and UV/ozone methods. The difference was explained by the atomic-scale topological difference induced during the RCA cleaning. This study reveals the lateral force microscopy as a very sensitive method to detect the microstructure of surfaces.     

ZnCo2O4电极材料的形貌调控制备与超级电容特性的研究

本文采用水热反应和高温将ZnCo₂O₄纳米活性材料原位生长在泡沫镍上,并通过控制前驱体溶液中NH₄F的添加量,获得了ZnCo₂O₄四种不同的形貌. 以ZnCo₂O₄-2/NF为正极,AC/NF为负极,组装得到纽扣式非对称超级电容器ZnCo₂O₄-2/NF//AC/NF. 通过X射线衍射（XRD）、场发射扫描电镜（FESEM）、透射电镜（TEM）等方法对四种形貌ZnCo₂O₄的组成和结构进行了分析. 在三电极体系下对不同形貌的ZnCo₂O₄电极进行循环伏安、恒流充放电以及电化学阻抗测试. 结果表明,当NH₄F的添加量为5 mmol时,所获得的薄纳米线团簇具有最高的面积比容量. 在电流密度为5 mA·cm^-2下,比容量为2.77 F·cm^-2. 基于正负两个电极的总面积,纽扣式非对称超级电容器的最大能量密度达到114.49μWh·cm^-2,相应的功率密度达到4001.59μW·cm^-2. 同时,功率密度达到24000μW·cm^-2时,对应的能量密度为80μWh·cm^-2.     

HREELS, STM, and STS study of CH(3)-terminated Si(111)-(1x1) surface

An ideally (1x1)-CH(3)(methyl)-terminated Si(111) surface was composed by Grignard reaction of photochlorinated Si(111) and the surface structure was for the first time confirmed by Auger electron spectroscopy, low energy electron diffraction, high-resolution electron energy loss spectroscopy (HREELS), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). HREELS revealed the vibration modes associated to the CH(3)-group as well as the C-Si bond. STM discerned an adlattice with (1x1) periodicity on Si(111) composed of protrusions with internal features, covering all surface terraces. The surface structure was confirmed to be stable at temperatures below 600 K. STS showed that an occupied-state band exists at gap voltage of -1.57 eV, generated by the surface CH(3) adlattice. This CH(3):Si(111)-(1x1) adlayer with high stability and unique electronic property is prospective for applications such as nanoscale lithography and advanced electrochemistry.     

Photochemical desorption from chlorinated Si(100) and Si(111) surfaces — Mechanisms and models

Understanding the mechanisms controlling the anisotropy of microetching is particularly critical as the scale of semiconductor devices shrink. Defining complex, dynamic chemical systems such as halogen etching require microscopic measurements combining kinetics, dynamics, surface layer composition and micromorphology on prototypical surfaces. This study is concerned with two important variables in addition to spontaneous chemical etching, the role of electronic defects induced by high level doping in producing site-specefic reaction and the enhancement of etching by irradiation at low fluences.

Substitutional defects introduced by selective doping significantly influence the rate of chlorine etching by forming shallow electronic states that are ionized at room temperature¹. We have shown that chlorine sticking coeficients as well as laser-assisted etching are significantly affected by doping at very high dopant levels. Enhancement for n-type doping is consistent with the simple assumption that holes at the surface should enhance Si-Si surface bond breaking and in disagreement with the fact that heavily p-doped silicon has a higher chlorine sticking coefficient than n-doped material².

Carrier effects generated by photoirradiation with above bandgap photons are considerably more complex than simple doping. A depletion layer and associated electric field are set up at the surface and minority carriers are preferentially swept to the surface. The type of photocarrier present at the surface is determined by both the doping and the photoirradiation.

Using photoinduced etching of heavily doped Si(100) and Si(111) by chlorine at low laser fluences, we studied the mechanism of photostimulated desorption using core-level photoemission and time-of-flight measurements of the photoproducts². These results will be interpreted in terms of field-modified electron-hole transport together with carrier-modified chlorine adsorption and desorption.