Fine and hyperfine structure of <Emphasis Type="Italic">P</Emphasis>-wave levels in muonic hydrogen

Corrections of order α ⁵ and α ⁶ are calculated for muonic hydrogen in the fine-structure interval ΔE ^fs = E(2P _3/2) − E(2P _1/2) and in the hyperfine structure of the 2P _1/2-and 2P _3/2-wave energy levels. The resulting values of ΔE ^fs = 8352.08 μeV, ΔẼ ^hfs(2P _1/2) = 7819.80 μeV, and ΔẼ ^hfs(2P _3/2) = 3248.03 μeV provide reliable guidelines in performing a comparison with relevant experimental data and in more precisely extracting the experimental value of the (2P–2S) Lamb shift in the muonic-hydrogen atom. Original Russian Text ? A.P. Martynenko, 2008, published in Yadernaya Fizika, 2008, Vol. 71, No. 1, pp. 126–136.     

Photoluminescence in germanium with a quasi-equilibrium dislocation structure

The dislocation-related photoluminescence of n-Ge single crystals with a quasi-equilibrium structure of 60° dislocations is investigated at a temperature of 4.2 K. It is shown that the dislocation-related photoluminescence spectra are described by a set involving from 8 to 13 Gaussian lines with a width of less than 15 meV. With due regard for the data available in the literature, the Gaussian lines with maxima at energies in the range 0.47 < E _m ≤ 0.55 eV are assigned to the emission of 90° Shockley partial dislocations involved in quasiequilibrium segments of 60° dislocations with different values of the stacking fault width Δ (Δ = Δ₀, Δ < Δ₀, and Δ > Δ₀). It is revealed that the d8 line at the energy E _m = 0.513 eV, which corresponds to the emission of straight segments with the equilibrium stacking fault width Δ₀, dominates in the photoluminescence spectra only at dislocation densities N _D < 10⁶ cm^?2. As the dislocation density N _D increases, the intensity of the d8 line decreases with the d7 line (E _m ≈ 0.507 eV) initially and the d7 and d6 lines (E _m ≈ 0.501 eV) then becoming dominant in the photoluminescence spectrum. The d7 and d6 lines are attributed to the emission of segments with stacking fault widths Δ < Δ₀. Possible factors responsible for the formation of stacking faults with particular widths Δ ≠ Δ₀ for quasi-equilibrium dislocations are discussed.     

Variable-range hopping conduction in LaMnO<Subscript>3 + δ</Subscript>

The temperature dependence of the electrical resistivity ρ(T) for ceramic samples of LaMnO_{3 + δ} (δ = 0.100–0.154) are studied in the temperature range T = 15–350 K, in magnetic fields of 0–10 T, and under hydrostatic pressures P of up to 11 kbar. It is shown that, above the ferromagnet-paramagnet transition temperature of LaMnO_{3 + δ}, the dependence ρ(T) of this compound obeys the Shklovskii-Efros variable-range hopping conduction: ρ(T) = ρ₀(T)exp[(T ₀/T)^1/2], where ρ₀(T) = AT ^9/2 (A is a constant). The density of localized states g(?) near the Fermi level is found to have a Coulomb gap Δ and a rigid gap γ(T). The Coulomb gap Δ assumes values of 0.43, 0.46, and 0.48 eV, and the rigid gap satisfies the relationship γ(T) ≈ γ(T _v)(T/T _v)^1/2, where T _v is the temperature of the onset of variable-range hopping conduction and γ(T _v) = 0.13, 0.16, and 0.17 eV for δ = 0.100, 0.125, and 0.154, respectively. The carrier localization lengths a = 1.7, 1.4, and 1.2 Å are determined for the same values of δ. The effect of hydrostatic pressure on the variable-range hopping conduction in LaMnO_{3 + δ} with δ = 0.154 is analyzed, and the dependences Δ(P) and γ_v(P) are obtained.     

Influence of a magnetic two-phase state on the magnetocaloric effect in the La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>x</Subscript>MnO<Subscript>3</Subscript> manganites

The magnetocaloric effect ΔT_ex and the magnetization in La_1?xSr_xMnO₃ single crystals (x=0.1, 0.125, 0.175, 0.3) have been experimentally studied. The magnetic entropy and the magnetocaloric effect ΔT_th were computed from magnetization curves. All the samples exhibited a maximum in the ΔT_th(T) curve at T=T _max ^′ . A step was observed on the ΔT_ex(T) curve in the region of T _max ^′ , with the value of ΔT_ex on this step being substantially smaller than ΔT_th. The step on the ΔT_ex(T) curve was followed by a maximum, which appeared at a temperature 20–40 K above T _max ^′ . This anomalous behavior of ΔT_ex and ΔT_th is assigned to the coexistence of two magnetic (ferro-and antiferromagnetic) phases in the crystal. The calculated value of ΔT_th is determined primarily by the ferromagnetic part of the crystal and disregards the negative contribution from the antiferromagnetic part of the crystal to ΔT_ex.     

CeAlO<Subscript>3</Subscript> crystals: Preparation and study of their electrical and optical characteristics

Crystals of cerium aluminate with perovskite structure were obtained using the cold-crucible technique. The electrical and optical properties of cerium aluminate were studied in air in the range 300–1300 K. The main characteristics of CeAlO₃ at T=300 K are a follows: electrical conductivity σ=10^?7 S/cm, dielectric permittivity ?=3000–10000 (both measured at a frequency of 1000 Hz), thermal band-gap width ΔE=2.3±0.5 eV, and optical width δE=2.65±0.25 eV, which decreases at a rate of ?0.62×10^?3 eV/K with increasing temperature in the 300-to 1500-K interval.     

Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface

The critical exponents of the β-(2×4) → α-(2×4) reconstruction phase transition on the (001) GaAs surface are determined experimentally. It is found that the phase transition is analogous to a van der Waals transition. The critical parameters T _c , P _c , and Θ_c have been measured experimentally. The mean field theory is applied, and three-parameter isotherms are obtained that agree with the experimental results at the following values of the parameters: E_st = 0.36 eV, ΔE = 0.18 eV, and E _i = 0.134 eV. Precision measurements of the critical exponents β and δ are carried out. Their values β = 1/8 and δ = 15 indicate that the phase transition is truly two-dimensional.     

Specific features of anion transfer in HoF<Subscript>3</Subscript> crystals at high temperatures

The anionic conductivity of HoF₃ single crystals with a β-YF₃ structure (orthorhombic crystal system, space group Pnma) is investigated over a wide range of temperatures (323–1073 K). The unit cell parameters of HoF₃ crystals are as follows: a=0.6384±0.0009 nm, b=0.6844±0.0009 nm, and c=0.4356±0.0005 nm. It is revealed that the conductivity anisotropy of the HoF₃ crystals is insignificant over the entire temperature range covered. The crossover from one mechanism of ion transfer to another mechanism is observed near the critical temperature T_c≈620 K. The activation enthalpy of electrical conduction is found to be ΔH₁=0.744 eV at T<T_c and ΔH₂=0.43 eV at T>T_c. The fluorine vacancies are the most probable charge carriers in HoF₃ crystals. The fluorine ionic conductivities at temperatures of 323, 500, and 1073 K are equal to 5×10^?10, 5×10^?6, and 2×10^?3 S cm^?1, respectively.     

Low-temperature contribution to the resonant tunneling conductance of a disordered N–I–N junction

A formula for the contribution ΔG ^res(T) to the resonant tunneling conductance of the N–I–N junction (where N is a normal metal and I is an insulator) with a weak (low impurity concentrations) structural disorder in the I layer from the low-temperature “smearing” electron Fermi surfaces in its N shores is obtained. It is shown that the temperature dependence ΔG ^res(T) in such a “dirty” junction qualitatively differs from the corresponding dependence ΔG ₀(T) in a “pure” (without resonant impurities in the I layer) junction: ΔG ^res(T) < 0, d(ΔG ^res)/dT < 0; ΔG ₀(T) > 0, d(ΔG ₀)/dT > 0, which can serve as an experimental test of the presence of impurity tunneling resonances in the disordered I layer.     

Quenching of ππ* triplet states of vaporous polycyclic aromatic compounds by oxygen

The oxygen quenching rate constants k _T ^O2 of the triplet state T ₁ of vapors of polycyclic aromatic hydrocarbons (PAHs) with strongly different oxidation potentials 0.44 eV < E _OX < 1.61 eV and energies of the triplet levels 14800 cm^?1 < E _T < 24500 cm^?1 (anthracene, 2-aminoanthracene, 9-nitroanthracene, chrysene, phenanthrene, fluoranthene, and carbazole) are estimated from the measured dependences of the decay rates and intensities of delayed fluorescence on the oxygen pressure P _O2. It is found that the rate constants k _T ^O2 vary from 4 × 10³ (9-nitroanthracene) to 4 × 10⁵ s^?1 Torr^?1 (2-aminoanthracene) and increase with decreasing oxidation potentials E _OX of PAHs. The rate constants k _T ^O2 for vapors and solutions are compared. The dependences of k _T ^O2 on the free energy of two intermolecular processes, namely, triplet energy transfer to oxygen and electron transfer, are analyzed. It is shown that the rate constants k _T ^O2 increase with decreasing electron transfer free energy, which proves that, along with energy transfer, charge-transfer interactions contribute to the quenching of the triplet states of PAH vapors.     

Antiferromagnetic Resonance in GdB<Subscript>6</Subscript>

The electron spin resonance has been measured for the first time both in the paramagnetic phase of the metallic GdB₆ antiferromagnet (T_N = 15.5K) and in the antiferromagnetic state (T < T_N). In the paramagnetic phase below T* ~ 70 K, the material is found to exhibit a pronounced increase in the resonance linewidth and a shift in the g-factor, which is proportional to the linewidth Δg(T) ~ ΔH(T). Such behavior is not characteristic of antiferromagnetic metals and seems to be due to the effects related to displacements of Gd³⁺ ions from the centrosymmetric positions in the boron cage. The transition to the antiferromagnetic phase is accompanied by an abrupt change in the position of resonance (from μ₀H₀ ≈ 1.9 T to μ₀H₀ ≈ 3.9 T at ν = 60 GHz), after which a smooth evolution of the spectrum occurs, resulting eventually in the formation of the spectrum consisting of four resonance lines. The magnetic field dependence of the frequency of the resonant modes ω₀(H₀) obtained in the range of 28–69 GHz is well interpreted within the model of ESR in an antiferromagnet with the easy anisotropy axis ω/γ = (H ₀ ² +2H_AH_E)^1/2, where H_E is the exchange field and H_A is the anisotropy field. This provides an estimate for the anisotropy field, H_A ≈ 800 Oe. This value can result from the dipole?dipole interaction related to the mutual displacement of Gd³⁺ ions, which occurs at the antiferromagnetic transition.     

EPR study of the spin dynamics of the (La<Subscript>1−<Emphasis Type="Italic">y</Emphasis></Subscript>Pr<Subscript>y</Subscript>)<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> system

The EPR of Mn ions in the (La_1?yPr_y)_0.7Ca_0.3MnO₃ system has been studied within a broad range of temperatures (4<T<600 K) and Pr concentrations (0≤y≤1), as well as under isotope substitution of ¹⁸O for ¹⁶O. All compositions were shown to undergo transitions to a magnetically ordered state with decreasing temperature. Magnetic phase diagrams were constructed for systems with different oxygen isotopes. The diagrams include paramagnetic, ferromagnetic, and antiferromagnetic regions. In the paramagnetic region, at temperatures not too close to the phase transition points, the Mn ion linewidth ΔH _pp (T) is related to the magnetic susceptibility χ(T) through the relation ΔH _pp (T) = [χ₀/χ(T)]ΔH _pp (∞) + ΔH₀, where ΔH _pp (∞) is the width of the exchange-narrowed line in the high-temperature approximation, χ₀ ∝ 1/T is the susceptibility of noninteracting ions, and ΔH₀ is the residual width originating from the sample porosity and resonance-field scatter in unoriented grains of a powder sample. An analysis of the data on ΔH _pp (∞), ΔH₀, and χ(T) made it possible to estimate the symmetric and antisymmetric exchange interaction of Mn ions and of the noncubic crystal-field component of the oxygen ions. These parameters were found to be independent of the oxygen isotope species to within experimental error.     

Hyperfine structure of the <Emphasis Type="Italic">S</Emphasis> levels of the muonic helium ion

Corrections of the α⁵ and α⁶ orders to the energy spectrum of the hyperfine splitting of the 1S and 2S levels of the muonic helium ion are calculated with the inclusion of the electron vacuum polarization effects, nuclear-structure corrections, and recoil effects. The values ΔE ^hfs(1S) = ?1334.56 meV and ΔE ^hfs(2S) = ?166.62 meV obtained for hyperfine splitting values can be considered as reliable estimates for comparison with experimental data. The hyperfine structure interval Δ₁₂ = 8ΔE ^hfs(2S) ? ΔE ^hfs(1S) = 1.64 meV can be used to verify QED predictions.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Effect of γ irradiation on the thermochromic phase transition in [(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>2</Subscript>NH<Subscript>2</Subscript>]<Subscript>2</Subscript>CuCl<Subscript>4</Subscript> crystals (as derived from heat capacity measurements)

The heat capacity of [(C₂H₅)₂NH₂]₂CuCl₄ crystals, both nonirradiated and γ-irradiated to a dose of 10⁷R, was studied in the temperature interval 90–330 K by adiabatic calorimetry. The temperature dependence of C_p(T) was found to have a peak-shaped anomaly in the region of the thermochromic phase transition (PT) at T = 322.7 K. Smoothened experimental heat capacity data were used to calculate the changes in the thermodynamic functions. The changes in the entropy and enthalpy of the thermochromic PT were determined to be ΔS = 42 J K^?1 mol^?1 and ΔH = 13653 J mol^?1 for the nonirradiated crystals and ΔS = 39 J K^?1 mol^?1 and ΔH = 12120 J mol^?1 for the irradiated crystals, respectively. Irradiation of a [(C₂H₅)₂NH₂]₂CuCl₄ crystal by γ rays to a dose of 10⁷ R was shown to shift the PT point toward lower temperatures by ΔT ≈ 1.7 K.     

Low-temperature spray-pyrolysis of FeS2 films and their electrical and optical properties

Iron disulfide (FeS₂) films with a wide range of electrical resistivities 100 Ω cm ? ρ ? 800 kΩ cm, a high adhesion to the substrate, and a resistance to aggressive media have been prepared by the spray pyrolysis of aqueous solutions of the salts FeCl₃ · 6H₂O and (NH₂)₂CS at low temperatures in the range 250°C ? T _S ? 400°C. It has been found that the FeS₂ films have a high transmittance T ≈ 60–70% and are characterized by a sharp transmission edge. It has been shown that the optical band gap for direct (E _g ^op = 2.19–2.78 eV) and indirect (E _g ^′op = 1.26–1.36 eV) optical transitions depends on the conditions of film preparation.     

Self-organization of atomic order and electronic structure in LaSrMnO films

A linear relationship between the critical temperatures T_max and T_min in the temperature dependences of the resistance of La_0.6Sr_0.2Mn_1.2O₃ single-crystal films that have a mesoscopic irregularity (metallic clusters in an insulating matrix) is found. A correlation between the atomic order and electronic structure of the films is studied by taking X-ray diffraction patterns and optical absorption spectra. It is shown that a rise in T_max and a simultaneous decrease in T_min cause correlated local changes in cluster areas of the structure. Namely, the volume occupied by a family of Mn-O planes with large interplanar spacings (d=2.04–2.08 Å) shrinks, while the volume occupied by a family of closer spaced (d=1.90–1.99 Å) planes grows. In the electronic subsystem, the density of states at ?ω=1.5 and 2.4 eV, which are due to Mn³⁺ and Mn⁴⁺ ions, increases, and the contribution from Mn²⁺ states at ?ω=0.9 eV decreases. As the charge states associated with Mn³⁺ and Mn⁴⁺ ions become dominant, the Mn-O binding energy grows. As a result, the contribution of the structural states with smaller d increases, thereby raising the density of states in the electronic subsystem at energies between 0.5 and 2.7 eV. The effect of self-organization in the multicomponent LaSrMnO system shows up in the transition from the heavily distorted rhombohedral to the less distorted orthorhombic structure.     

The Hammond postulate: A quantitative interpretation

The Hammond postulate is considered in terms of the model of intersecting parabolas. It is shown that, in radical detachment reactions of the type X _f ^· + HX _i → X _f H + X _i ^· with a symmetrical reaction center X _i …H…X _f , the H atom in the transition state is equidistant from the X _i and X _f atoms if the enthalpy of the reaction ΔH = 0. The X _i …H distance increases and the X _f …H distance decreases linearly as ΔH grows. The dependence remains linear over the range ΔH _min ≤ ΔH ≤ H _max. The same result was obtained in quantum-chemical calculations for reactions of the type R _f ^· + R _i H. In reactions of the type X^· + HY → XH + Y^· with an asymmetric reaction center X…H…Y, the X…H and Y…H interatomic distances in the transition state at ΔH = 0 depend on the force constants and lengths of the X-H and Y-H bonds. The Y…H distance increases and the X…H distance decreases linearly as ΔH grows. A similar picture is observed in the model of intersecting Morse curves, where the dependence of interatomic distances on ΔH in the transition state is nonlinear. Equations describing interatomic distances in the transition state as functions of the enthalpy of the reaction are presented.     

Josephson effects in unconventional heavy fermion superconductors

We discuss the Josephson effect for pairing states which break crystal symmetries in addition to gauge symmetry. We consider theE _1g andE _2u models for the low-temperature phase ofUPt ₃, with order parameters Δ(E _1g )～p _z (p _x +ip _y ) and Δ(E _2u )～p _z (p _x +ip _y )². We report calculations of Josephson critical currents, taking into account the effects of depairing at the interface. For singlet-triplet junctions the critical current is non-zero only for spin-orbit, spin-flip tunneling, and is found to be much smaller than the Ambegaokar-Baratoff value even when the spin-orbit tunneling amplitude is comparable to the spin-independent amplitude.     

Thermophysical and thermoacoustical properties of acetophenone with ethyl butyrate at temperatures of 303.15, 313.15, and 323.15 K

Densities, viscosities, and ultrasonic velocities of the binary mixtures of acetophenone with ethyl butyrate were measured over the entire mole fractions at 303.15, 313.15, and 323.15 K. From these experimental results, excess molar volume V ^E , viscosity deviation Δη, deviations in isentropic compressibility Δκ _s , excess intermolecular free length ΔL _f , and excess Gibbs free energy ΔG* ^E were calculated. The viscosity values were fit to the models of Krishnan–Laddha and McAllister. The thermophysical properties under study were fit to the Jouyban–Acree model. The excess values were correlated using Redlich–Kister polynomial equation to obtain their coefficients and standard deviations. It was found that in all cases, the data obtained fitted with the values correlated by the corresponding models very well. The results are interpreted in terms of molecular interactions occurring in the solution.     

Effect of the Lattice and Spin-Phonon Contributions on the Temperature Behavior of the Ground State Splitting of Gd<Superscript>3+</Superscript> in SrMoO<Subscript>4</Subscript>

The temperature behavior of the EPR spectra of the Gd³⁺ impurity center in single crystals of SrMoO₄ in the temperature range T = 99–375 K is studied. The analysis of the temperature dependences of the spin Hamiltonian b ₂ ⁰ (T) = b₂(F) + b₂(L) and P ₂ ⁰ (T) = P₂(F) + P₂(L) (for Gd¹⁵⁷) describing the EPR spectrum and contributing to the Gd³⁺ ground state splitting ΔE is carried out. In terms of the Newman model, the values of b₂(L) and P₂(L) depending on the thermal expansion of the static lattice are estimated; the b₂(F) and P₂(F) spin-phonon contributions determined by the lattice ion oscillations are separated. The analysis of b ₂ ⁰ (T) and P ₂ ⁰ (T) is evidence of the positive contribution of the spin-phonon interaction; the model of the local oscillations of the impurity cluster with close frequencies ω describes well the temperature behavior of b₂(F) and P₂(F).