绝缘体上硅金属氧化物半导体场效应晶体管中辐射导致的寄生效应研究

基于⁶⁰Co γ射线源研究了总剂量辐射对绝缘体上硅（silicon on insulator,SOI）金属氧化物半导体场效应晶体管器件的影响.通过对比不同尺寸器件的辐射响应,分析了导致辐照后器件性能退化的不同机制.实验表明：器件的性能退化来源于辐射增强的寄生效应;浅沟槽隔离（shallow trench isolation,STI）寄生晶体管的开启导致了关态漏电流随总剂量呈指数增加,直到达到饱和;STI氧化层的陷阱电荷共享导致了窄沟道器件的阈值电压漂移,而短沟道器件的阈值电压漂移则来自于背栅阈值耦合;在同一工艺下,尺寸较小的器件对总剂量效应更敏感.探讨了背栅和体区加负偏压对总剂量效应的影响,SOI器件背栅或体区的负偏压可以在一定程度上抑制辐射增强的寄生效应,从而改善辐照后器件的电学特性.     

Polarization effect on the spin symmetry for anti-Lambda spectrum in ~(16)O+■ system

The polarization effect on the spin symmetry for anti-Lambda spectrum in 16 O+Λ system has been studied in relativistic mean-field theory.The PK1 effective interaction is used for nucleon-meson couplings and G-parity symmetry with a reduction factor ξ = 0.3 is adopted for anti-Lambda-meson couplings.The energy differences between spin doublets in the anti-Lambda spectrum are around 0.10-0.73 MeV for p Λ state.The dominant components of the Dirac spinor for the anti-Lambda spin doublets are found to be near identical.It indicates that the spin symmetry is still well-conserved against the polarization effect from the valence antiLambda hyperon,which leads to a highly compressed cold nucleus with the central density up to 2 - 3 times of saturated density.     

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

Can the spin-orbit interaction break the channel degeneracy (conservation) of the two-channel orbital Kondo problem?

Two-level systems (TLS) interacting with conduction electrons are possibly described by the two-channel Kondo Hamiltonian. In this case the channel degeneracy is due to the real spin of the electrons. The possibility of breaking that degeneracy (conservation) has interest on his own. In fact, we show that the interaction of the conduction electrons with a spin-orbit scatterer nearby the TLS leads to the breaking of the channel degeneracy (conservation) only in the case of electron-hole symmetry breaking. The generated channel symmetry breaking TLS-electron couplings are, however, too weak to result in any observable effects.Received: 21 October 2003, Published online: 8 December 2003PACS: 72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys - 72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect) - 71.55.-i Impurity and defect levels     

电气线路互联系统线缆抗高空核电磁脉冲耦合效应

高空核电磁脉冲（HEMP）对电子设备的耦合途径主要有两方面:一方面是通过装备（产品）上的天线耦合通道进入到电子系统内的“前门耦合”方式；另一方面则是“后门耦合”，即通过装备（产品）上的壳体、电源线、电缆、机箱的缝隙、孔洞等途径进行耦合。主要研究电气线路互联系统(EWIS)线缆抗高空核电磁脉冲耦合效应，通过研究HEMP干扰的特征、能量分布，搭建HEMP数学模型，采用控制变量法，改变EWIS线缆类型、离地高度等要素，通过在CST上建立仿真模型以及开展试验，分析HEMP对电子设备造成的影响程度，得到HEMP耦合效应的一般性结论与规律。     

Quantum dynamics studies on the non-adiabatic effects of H + LiD reaction

After the Big Bang, chemical reactions of hydrogen with LiH and its isotopic variants played an important role in the late stage of recombination. Moreover, these reactions have attracted the attention of experts in the field of molecular dynamics because of its simple structure. Electronically non-adiabatic effects play a key role in many chemical reactions, while the related studies in LiH₂ reactive system and its isotopic variants are not enough, so the microscopic mechanism of this system has not been fully explored. In this work, the microscopic mechanism of H + LiD reaction are performed by comparing both the adiabatic and non-adiabatic results to study the non-adiabatic effects. The reactivity of R1 (H + LiD → Li + HD) channel is inhibited, while that of R2 (H + LiD → D + LiH) channel is enhanced when the non-adiabatic couplings are considered. For R1 channel, a direct stripping process dominates this channel and the main reaction mechanism is not influenced by the non-adiabatic effects. For R2 channel, at relatively low collision energy, the dominance changes from a rebound process to the complex-forming mechanism when the non-adiabatic effects are considered, whereas the rebound collision approach still dominates the reaction at relatively high collision energy in both calculations. The presented results provide a basis for further detailed study on this importantly astrophysical reaction system.     

液体核磁共振中由分子间偶极耦合和分子内标量耦合共同作用后的谱图裂分模式

在高极化多自旋液体样品中,同时存在着分子间偶极（D）耦合和分子内标量（J）耦合,它们的共同作用产生了一些原来观测不到的分子间多量子相干信号。而且,信号的裂分模式与只存在J耦合的多自旋体系中观测到的多量子相干信号的裂分模式不同。本文从理论和实验上研究了这些禁阻的共振峰及其独特的裂分模式。为了比较验证,我们以I2S3+X自旋体系为例,结合使用选择和非选择性的射频脉冲序列来获得分子间双量子相干信号的五种裂分模式。进而归纳出对IpSq+Xk (p, q, k = 1, 2, 3,…)自旋体系普适的裂分模式规则。并指出,它们中如(1:0:-1)的裂分模式会放大J耦合裂分,使得J耦合常数的测量更精确,特别在J耦合常数很小或不均匀场中的J耦合常数的测量中具有诱人的应用前景。结果表明理论预测,计算机模拟和实验观测结果三者吻合的很好。     

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal--organic--semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50~nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The $82\%$ and $96\%$ drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.     

Modified kagome physics in the natural spin-1/2 kagome lattice systems: kapellasite Cu3Zn(OH)6Cl2 and haydeeite Cu3Mg(OH)6Cl2

The recently discovered natural minerals Cu3Zn(OH)6Cl2 and Cu3Mg(OH)6Cl2 are spin 1/2 systems with an ideal kagome geometry. Based on electronic structure calculations, we develop a realistic model which includes couplings across the kagome hexagons beyond the original kagome model that are intrinsic in real kagome materials. Exact diagonalization studies for the derived model reveal a strong impact of these couplings on the magnetic ground state. Our predictions could be compared to and supplied with neutron scattering, thermodynamic data, and NMR data.     

Effects of quenched disorder in the two-dimensional Potts model: a Monte Carlo study

Motivated by recent experiments on phase behavior of systems confined in porous media, we have studied the effect of randomness on the nature of the phase transition in the two-dimensional Potts model. To model the effects of the porous matrix we introduce a random distribution of couplings P(J(ij))=pdelta(J(ij)-J1)+(1-p)delta(J(ij)-J2) in the q state Potts Hamiltonian. An extensive Monte Carlo study is made on this system for q=5. We studied two different cases of disorder (a) J(1)/J(2)-->infinity and p=0.8 and (b) J(1)/J(2)=10 and p=0.5. We observed, in both cases, that the weak first order transition that appears in the pure case, changes to a second-order transition. A finite size scaling analysis shows that the correlation length exponent nu is close to 1 and the best fit to the dependence of the specific heat on system size is logarithmic. This suggests that both cases belong to the universality class of the Ising model. In contrast, the magnetic exponents point to a different universality class.     

部分耗尽结构绝缘体上硅器件的低频噪声特性

针对部分耗尽结构绝缘体上硅(silicon-on-insulator, SOI)器件低频噪声特性展开实验与理论研究. 实验结果表明, 器件低频噪声主要来源于SiO₂-Si界面附近缺陷态对载流子的俘获与释放过程; 基于此理论可提取前栅和背栅氧化层界面附近缺陷态密度分别为8×10¹⁷ eV^-1·cm^-3和2.76×10¹⁷ eV^-1·cm^-3. 基于电荷隧穿机理, 在考虑隧穿削弱因子、隧穿距离与时间常数之间关系的基础上, 提取了前、背栅氧化层内缺陷态密度随空间的分布情况. 此外, SOI器件沟道电流归一化噪声功率谱密度随沟道长度的增加而线性减小, 这表明器件低频噪声主要来源于沟道的闪烁噪声. 最后, 基于电荷耦合效应, 分析了背栅电压对前栅阈值电压、沟道电流以及沟道电流噪声功率谱密度的影响.     

Transformation of surface magnetostatic waves channeled by a step bias field

The propagation of magnetostatic waves in a waveguide ferromagnetic channel formed by exposing a ferromagnetic film to a step bias is simulated. Both weak and strong channel couplings are considered. The dispersion characteristics and the distributions of wave functions are calculated. It is shown that the amplitudes of “half-waves” fitting into the channel width alternately increase and decrease with increasing frequency and the half-waves pass into the channel with the largest bias.     

Dipolar and J encoded DQ MAS spectra under rotational resonance

A two-dimensional (2D) double-quantum (DQ) experiment under rotational resonance (R(2)) conditions is introduced for evaluating dipolar couplings in rotating solids. The contributions from the R(2)-recoupled dipolar interaction and the J coupling can be conveniently separated in the resulting 2D R(2)-DQ spectrum, so that the unknown dipolar coupling can readily be extracted, provided that the values of the involved J coupling constants are known. Since the measured parameters are integral intensity ratios between suitably chosen absorption peaks in the 2D spectrum, the proposed method is characterized by a reduced sensitivity to relaxation parameters. The effect of rotor-modulated terms, including chemical shift anisotropy, is efficiently averaged out by synchronizing the excitation/reconversion time with the rotor period. All of these features are demonstrated theoretically by the example of two model systems, namely, isolated spin-pairs and a three-spin system. The results of the theoretical models are applied to both (13)C and (1)H nuclei to extract dipolar couplings in uniformly (13)C labeled L-alanine and a crosslinked natural rubber.     

Limits on anomalous trilinear gauge couplings in Zγ events from pp¯ collisions at √s=1.96 TeV

Using Zγ candidate events collected by the CDF detector at the Tevatron Collider, we search for potential anomalous (non-standard-model) couplings between the Z boson and the photon. Zγ couplings vanish at tree level and are heavily suppressed at higher orders; hence any evidence of couplings indicates new physics. Measurements are performed using data corresponding to an integrated luminosity of 4.9 fb(-1) in the Z→ννˉ decay channel and 5.1 fb(-1) in the Z→l(+)l(-) (l=μ, e) decay channels. The combination of these measurements provides the most stringent limits to date on Zγ trilinear gauge couplings. Using an energy scale of Λ=1.5 TeV to allow for a direct comparison with previous measurements, we find limits on the CP-conserving parameters that describe Zγ couplings to be |h(3)(γ,Z)|<0.022 and |h(4)(γ,Z)|<0.0009. These results are consistent with standard model predictions.     

Effect of process parameters on the EHD airflow

This work deals with the assessment by numerical investigations of the electrohydrodynamic enhancement of heat transfer in a channel. In order to get a better understanding of the phenomena, we developed an original numerical approach. The model handles the couplings between a non-isothermal turbulent flow and corona discharges from multiple wires. The typical configuration consists in a channel where air enters at a given velocity. In the channel, the ionic wind is produced by multiple coronating wires. In this study, the model is used in order to analyse the effect of some process parameters (inter-electrode distance, wire radius, applied voltage) on the flow and on the convective heat transfer enhancement. We firstly confirm that the model operates well and permits selection of the best parameters in a specific configuration. The model reveals that similar flows could be obtained with different combinations between the inter-electrode distance and the applied voltage. In a second stage, the distance between adjacent wires is discussed. Synergetic effects are obtained for close wires; they locally lead to a tenfold increase of the heat transfer enhancement.     

Natural J coupling (NJC) analysis of the electron lone pair effect on NMR couplings: 2. The anomeric effects on 1 J (C,H) couplings and its dependence on solvent

The electronic origin of the influence of the anomeric effect (negative hyperconjugative interaction, NHI) on the Fermi contact (FC) term of ¹ J(C, H) couplings has been studied from a theoretical point of view at the DFT-B3LYP level. The HN=CH₂, molecule was chosen as the primary model compound, in which both FC ¹ J(C, H) couplings were decomposed into bond contributions with the natural J coupling dissection approach (NJC). Differences between the ¹ J (C, H)^FC couplings for C——H bonds in synperiplanar and antiperiplanar orientations with respect to the nitrogen non-bonding electron pair closely follow the experimental trend. They are made up chiefly of three NJC contributions: ‘bond’, ‘direct lone pair’ and the ‘carbon-core orbitals’. The NHI influence on these terms was studied by applying the natural bond orbital (NBO) deletion procedure to the charge transfer interaction into the antiperiplanar (C——H) antibond (n(N)→(C——H)?) prior to the NJC dissection calculation. The dielectric solvation effect on both the total FC terms and the respective NJC contributions was estimated by carrying out the calculations using the polarization continuum model. Inhibition of the anomeric effect is evident when the solvent polarity is increased. NHI saturates rapidly with increasing solvent dielectric. Specific solute-solvent interaction effects on ¹ J(C, H) couplings were estimated by evaluating molecular complex models of the form CH₂=HN…S (S = H₂O and DMSO).     

Coupled mode analysis of in-plane channel drop filters with resonant mirrors

A channel drop filter system that consists of two waveguides and three cavities is studied. One cavity couples with both waveguides, while the other two work as resonant mirrors to reflect the selected channel back into the system. The operation of this configuration is analyzed, using coupled mode theory. The conditions to achieve 100% in-plane channel transfer are derived. A method to suppress the side lobes of reflection and backward drop is also proposed. The direct coupling between the cavities is not required. The analysis is verified by two-dimensional finite difference time domain simulations in 2D hexagonal photonic crystals.     

Sensitive Probe for Symmetry Potential

Based on both very obvious isospin effect of the neutron-proton number ratio of nucleon emissions （n/p）nud on symmetry potential and （n/p）nucl＇s sensitive dependence on symmetry potential in the nuclear reactions induced by halo-neutron projectiles, compared to the same mass stable projectile, probing symmetry potential is investigated within the isospin-dependent quantum molecular dynamics with isospin and momentum-dependent interactions for different symmetry potentials U;ym and U2^sym. It is found that the neutron-halo projectile induces very obvious increase of （n/p）nucl and strengthens the dependence of （n/p） l on the symmetry potential for all the beam energies and impact parameters, compared to the same mass stable projectile under the same incident channel condition. Therefore （n/p）nucl induced by the neutron-halo projectile is a more favourable probe than the normal neutron-rich and neutron-poor projectiles for extracting the symmetry potential.