A New Kind of Buffer Layer of TiO2 Self—Assembled Material in Organic Electroluminescent Devices

A new kind of TiO2 self-assembled nanometre material has been fabricated and is used as a hole-injecting buffer layer in organic electroluminescent devices.The luminance and the efficiency of a devicy individually rises from 1500cd/m^2 to 5000cd/m^2 and from 2.0cd/.A to 3.92cd/A at the current density of 100mA/cm^2.The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hloe transprting layer to the anode.     

Enhanced NIR emission in Ce^3＋/Er^3＋-doped YAG induced by Bi^3＋ doping

Ce^3＋/Er^3＋/Bi^3＋ triply-doped yttrium aluminum garnet （YAG） is synthesized using co-precipitation method. The Bi^3＋ concentration-dependent near-infrared （NIR） emission behavior is systemically in- vestigated. The NIR emission of Er^3＋ ions at 1531 nm is enhanced threefold by the addition of 7 mol% Bi^3＋. Bi^3＋doping results in the formation of exciton in YAG and the variation in the local environment of the doped rare-earth ions. The enhancement in NIR luminescence is ascribed to the combined effects of the sensitization of exciton→Ce^3＋ →Er^3＋ and the Bi^3＋ doping-induced adjustment of the local environment for Ce^3＋ and Er^3＋ ions.     

Surface Modification of W9Cr4V2Mo High Temperature Bearing Steel by Rare Earth Ion Implantation

Wear and corrosion are the main failure mechanisms of bearings and some measures have been proposed to prolong the working lifetime. Possible approaches include the use of more expensive materials, ion implantation, surface finish enhancement, and ion beam assisted deposition. Among them ion implantation is used extensively for the modification of surface and properties of materials and many studies have disclosed that the beating steel surface can be strengthened by ion implantation of different elements such as N, Mo, N and Mo, and so on.     

Luminescent Properties of Eu^3＋—Doped Yttrium Oxide Chloride Embedded in Nanoporous Glass

The photoluminescence of Eu^3 -doped yttrium oxide chloride embedded in nanoporous glass has been observed.In comparison with those in the powder phosphor,the emission lines of Eu^3 ions becom much broader and lueshift was observed in the lines due to ^5D0→^7F2 transitions and the Eu-O charge transfer excitation band.The ratio intensities of the ^5D0→^7F1 transitions to the ^5D0→^7F2 transitions of Eu^3 ion become higher and change at different excitation excitation wavelengths,such as 393nm and 254nm.The two excitation wavelengths belong to the 4f→4f transition of the Eu^3 ion and the Eu-O charge transfer,respectively,This material may be developed into a new luminescent glass.     

Role of amorphous silicon domains of Er^3＋ emission in the Er—doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.