排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

一种平行栅碳纳米管阵列阴极的场发射特性研究

建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 kΩ时,器件对阳极驱动电压的要求更高. 关键词： 平行栅碳纳米管阵列 悬浮球 场增强因子 接触电阻     

Au(110)表面结构和氧原子吸附的第一性原理研究

用密度泛函理论(DFT)研究了金属Au(110)表面结构以及氧原子的吸附状态.计算得到Au(110)-(1×2)缺列再构表面原子的弛豫分别是-15.0%(Δd₁₂/d₀)和-1.1%(Δd₂₃/d₀),表面能为52.7 meV/²,功函数Φ=5.00 eV;Au(110)-(1×3)缺列再构表面的Δd_{1 关键词： 缺列再构Au(110)表面 STM图像 氧原子吸附}     

三角对称晶场下d8电子组态的EPR参量的普遍公式及其应用

本文考虑到d⁸电子组态中所有自旋三重态和自旋单态对基态的影响,用高阶微扰法导出了d⁸电子组态在三角对称晶场下光谱和基态EPR普遍公式。发现在三角对称晶场下,d⁸电子组态离子的g_⊥ > g_‖或g_⊥ < g_‖和D > 0或D < 0是以立方对称晶场为界,晶体中顺磁离子的配体沿C₃轴伸长或压缩所致。利用所得公式计算了NiCl₂和NiSiF₆·6H₂O晶体的EPR参量,其结果与实验吻合较好。     

弹性矩形板方程在非线性边界条件下整体解的存在唯一性

考虑了在非线性边界条件下的弹性矩形板方程.利用Galerkin方法,首先证明了该方程在非线性边界(a)及初值w⁰∈W,w¹∈W的条件下初边值问题存在唯一整体弱解w(t).其次证明了该方程在非线性边界(b)及初值w⁰∈W₁,w¹∈W₁的条件 关键词： 弹性矩形板方程 非线性边界条件 初边值问题 整体解     

掺Gd3+钼酸盐AMoO4 (A=Ca,Sr, Ba,Pb)自旋哈密顿参量的理论计算

采用基于单电子晶体场机制的对角化能量矩阵方法, 计算了Gd³⁺在钼酸盐AMoO₄ (A=Ca, Sr, Ba, Pb)晶体中的自旋哈密顿参量(g因子g_//, g_⊥和零场分裂b₂⁰, b₄⁰, b₄⁴, b₆⁰, b₆⁴). 矩阵中的晶体场参量采用重叠模型计算. 计算结果显示, 应用三个合理的可调参量[即重叠模型中的内禀参量A₂ (R₀), A₄ (R₀)和A₆ (R₀)], 计算的七个自旋哈密顿参量与实验结果符合甚好, 表明该方法可用于计算或解释Gd³⁺在晶体中的自旋哈密顿参量. 关键词： AMoO₄ (A=Ca,Sr,Ba,Pb):Gd³⁺晶体')" href="#">AMoO₄ (A=Ca,Sr,Ba,Pb):Gd³⁺晶体 自旋哈密顿参量 晶体场理论 对角化能量矩阵     

高速碰撞SPH方法模拟中的初始光滑长度和粒子间距

采用光滑粒子流体动力学方法对高速碰撞问题作数值模拟,分析初始光滑长度和非一致粒子间距对计算结果的影响,提出修正光滑长度法,并引入XSPH速度纠错公式.数值结果表明,初始光滑长度越大,弹丸的刚性越小,h₀的合理取值范围应为d₀<h₀≤1.5d₀;粒子间距越小,材料的刚性越小.非一致粒子间距和均匀粒子分布的计算结果吻合的较好.     

一种平行背栅极碳纳米管阵列的场增强因子计算

建立一种平行背栅极碳纳米管阵列阴极,基于电场叠加原理,利用镜像电荷法对其进行计算,给出碳纳米管顶端表面电场增强因子。在此基础上,进一步分析器件各类参数对电场增强因子的影响。分析表明,碳纳米管阵列阴极具有最佳阵列密度,其对应碳纳米管间距大约为碳纳米管高度的两倍,靠阴极阵列边缘部位的碳纳米管发射电子能力比其中心部位的大。除了碳纳米管的长径比之外,栅极宽度、栅极厚度和栅极间距等也对电场增强因子有一定的影响:栅极越宽,场增强因子越大;而栅极厚度、栅极间距越大,场增强因子就越小。     

一种平行背栅极碳纳米管阵列的场增强因子计算

建立一种平行背栅极碳纳米管阵列阴极,基于电场叠加原理,利用镜像电荷法对其进行计算,给出碳纳米管顶端表面电场增强因子。在此基础上,进一步分析器件各类参数对电场增强因子的影响。分析表明,碳纳米管阵列阴极具有最佳阵列密度,其对应碳纳米管间距大约为碳纳米管高度的两倍,靠阴极阵列边缘部位的碳纳米管发射电子能力比其中心部位的大。除了碳纳米管的长径比之外,栅极宽度、栅极厚度和栅极间距等也对电场增强因子有一定的影响:栅极越宽,场增强因子越大;而栅极厚度、栅极间距越大,场增强因子就越小。     

开放Ⅴ型系统相对位相对LWI增益瞬态演化的影响

数值计算具有自发辐射诱导相干性的开放V型三能级原子系统密度矩阵运动方程,分析无反转激光(LWI)增益的瞬态演化.结果表明:无论是否存在非相干抽运,探测场和驱动场间的相对位相(Ф)对增益的瞬态演化都有显著的影响;通过选择Ф的取值可以获得更大的瞬态和稳定增益;不存在非相干抽运时,系统达到瞬态增益最大值及获得增益稳定值所需要的时间更长,演化过程中振荡幅度更大,获得的增益更大;原子退出速率r₀(原子注入速率比S)的变化将使增益瞬态演化的具体过程发生改变,在r₀(S)的一定取值范围内,瞬态和稳定增益随S(r₀)的增大而增大.     

带栅极纳米线冷阴极的场增强因子研究

场增强因子是体现场发射冷阴极器件性能优劣的重要参数.利用静电场理论给出了一种带栅极(normal-gated)纳米线冷阴极的场增强因子表示式β=k₁{N²·(L-d₁)²+［1/k₁+(L-d₁)］²}^1/2，且进一步分析了几何参数对场增强因子的影响.结果表明，纳米线突出栅孔的部分(L-d₁)与栅孔半径越大，则场增强因子越大；而纳米线半径越小，则场增强因子越大；当L远大于d₁时满足β∝L/r₀.其中N=N₁(k₁r₀)/N₀(k₁r₀)，N₀(k₁r₀)和N₁(k₁r₀)分别代表零阶和一阶Neumann函数，k₁=0.8936/R，R为栅孔半径，L为纳米线长度，r₀为纳米线半径，d₁表示阴极与栅极间距.     

Anderson localization in different one-dimensional systems with off-diagonal disorder and spin-dependence

The localization properties of certain spin-dependent, one-dimensional electronic systems with only off-diagonal disorder are studied. In higher dimensions (d=2,3) the models considered would correspond to different universality classes, whereas ford=1 no qualitative difference is found: ForE=0, all eigenstates are exponentially localized, whereas forE0 the localization length diverges logarithmically, such that exactly atE=0 the geometric average of the transmission coefficient would decay with increasing chain lengthL as exp (-const. ·L ^1/2), instead of the usual, exponential decay.ForE=0, in the interior of the band, the localization lengthr ₀ diverges W ₂ ^–2 in the limit of weak disorder (W ₂0), whereas just at the band edge one has roughlyr ₀W ₂ ^–2/3. A universal recursion relation, depending only on the energy and on certain randomly distributed determinants, determines the localization length and the density of states for all systems considered.     

Ring Airy-Like Beams along Predesigned Parabolic Trajectories

By phase-modulating ring Airy Gaussian beams, ring Airy-like beams propagating along predesigned parabolic trajectories are presented which combine the properties of accelerating beams and abruptly autofocusing beams analytically and numerically for the first time. The enhancement of the quadratic term ratio α shortens the autofocus distance and increases the slope of the beams after autofocusing. Interestingly, the main lobe tends to break into pieces as α increases and the possible reasons have been discussed. Furthermore, the distribution factor β and the radius of the primary r₀ can prominently affect the autofocus distance and the intensity at the focal point but do not change the slope of the beams after the autofocusing. In addition, the self-healing properties are validated to be retainable while RAiG beams via predesigned parabolic trajectories with various α.     

Further observations on the variation with dielectric constant and thickness of the reflectance and phase change on reflection of films

Studies of the behaviour with ₁, ₂ and film thickness of the optical functions reflectance (R) and phase change on reflection (Φ_r) have previously been made for both very thin and very thick films. Abelès [J. Opt. Soc. Amer. 47 (1957) 473] has formulated equations for very thin films where functions of ₁ and ₂ are the coefficients of a power series of the optical thickness, x(2πd/λ) up to x², whilst in the case of very thick films (solids) the relationships between ₁ and ₂ can be represented in polar coordinates L and α by ₁=L cos α, ₂=L sin α where L_R=2y²₀W²(1+cos α−1/W²) [W=(1+R)/(1−R)] and L_Φr=2(y₀/ tan Φ_r)²(1−cos α+tan ² Φ_r) [Ward, Opt. and Laser Tech. 27 (1995) 125]. The present study is concerned with films of intermediate optical thicknesses (1.0<2πd/λ<solid) and has revealed that the polar-type relationships previously noted for solid materials are augmented by secondary structures of maxima and minima whose position and amplitude can be predicted by adapting the exact equations for R and Φ_r.     

K0 production in e+e− annihilations at 30 GeV center of mass energy

Inclusive K⁰-production has been measured in e⁺e^- annihilation at a center of mass energy of about W = 30 GeV. The ratio of K⁰ + K⁰ production to μ⁺μ^- production is R_K0 = 5.6 ± 1.1 (statist. error) ± 0.8 (system.error) This value is about a factor of three higher than R_K0 at W = 7 GeV. The cross sections (s/β) dσ/dx is consistent with a scaling behaviour.     

Smectic-A edge dislocations in a very thin cell

We study stable “bookshelf” smectic-A structures within a very thin plane-parallel cell of thickness L in which the mismatch between surface preferred (d _s) and intrinsic (d₀) smectic layer thicknesses occurs. The Landau-Ginzburg approach based on a complex smectic order parameter is used. For a weak enough smectic positional anchoring strength W smectic layers adopt the modified bookshelf profile. In a thick enough cell with increasing W a lattice of edge dislocations is continuously formed at the confining surfaces and then depinned from them. The structure with dislocations is formed when the condition d ₀/( d ₀/d _s - 1) ∼ 2 is fulfilled, where is the positional surface anchoring extrapolation length. If the cell is thin enough the dislocations formed at opposite cell plates annihilate and consequently the smectic layers adopt a locked bookshelf structure. This transition is discontinuous and takes place when d ₀/(L d ₀/d _s - 1) ∼ 5 is realized. To observe these transitions in a cell of thickness L∼ 1μm the conditions W∼ 10^-6 J/m ² and d ₀/d _s - 1∼ 5 ^. 10^-4 have to be fulfilled. All the three qualitatively different structures coexist at the triple point. Received 21 February 2002     

Reinterpretation of narrow bandwidths in a model for 5d electrons in the heavy rare-earth metals

The narrow widthsW(1 eV) of 5d subbands occurring in a model for 5d electrons in the heavy rare-earth metals are reinterpreted as effective bandwidths for the purpose of determining the equilibrium occupation numbers of 5d subbands. It is shown that, if explicit consideration of interactions between 5d electrons is limited to intraatomic Coulomb interactions without exchange, then, to first order in the intraatomic repulsion energyU between 5d electrons, these effective widths satisfyW=W ₁-FU. HereW ₁ is a rectangular-subband equivalent of the overall subband width, andF is a numerical factor, the value of which depends on the local basis states and number of 5d electrons per atom. For the model being discussed it is estimated thatF=0.6±0.4. A valueW ₁ ^B 4 eV is inferred forW ₁ in Gd from results of band-structure calculations. The termFU cannot account for all of the difference betweenW ₁ ^B andW; the discrepancy is attributed to effects of correlation onW ₁.     

Global strings in extra dimensions: The full map of solutions,matter trapping,and the hierarchy problem

We consider (d ₀ + 2)-dimensional configurations with global strings in two extra dimensions and a flat metric in d ₀ dimensions, endowed with a warp factor e ^2γ depending on the distance l from the string center. All possible regular solutions of the field equations are classified by the behavior of the warp factor and the extradimensional circular radius r(l). Solutions with r → ∞ and r → const > 0 as l → ∞ are interpreted in terms of thick brane-world models. Solutions with r → 0 as l → l _c > 0, i.e., those with a second center, are interpreted as either multibrane systems (which are appropriate for large enough distances l _c between the centers) or as Kaluza-Klein-type configurations with extra dimensions invisible due to their smallness. In the case of the Mexican-hat symmetry-breaking potential, we build the full map of regular solutions on the (ɛ, Γ) parameter plane, where ɛ acts as an effective cosmological constant and Γ characterizes the gravitational field strength. The trapping properties of candidate brane worlds for test scalar fields are discussed. Good trapping properties for massive fields are found for models with increasing warp factors. Kaluza-Klein-type models are shown to have nontrivial warp factor behaviors, leading to matter particle mass spectra that seem promising from the standpoint of hierarchy problems. The text was submitted by the authors in English.     

W-Geometry

The geometric structure of theories with gauge fields of spins two and higher should involve a higher spin generalisation of Riemannian geometry. Such geometries are discussed and the case ofW -gravity is analysed in detail. While the gauge group for gravity ind dimensions is the diffeomorphism group of the space-time, the gauge group for a certainW-gravity theory (which isW -gravity in the cased=2) is the group of symplectic diffeomorphisms of the cotangent bundle of the space-time. Gauge transformations forW-gravity gauge fields are given by requiring the invariance of a generalised line element. Densities exist and can be constructed from the line element (generalising ) only ifd=1 ord=2, so that only ford=1,2 can actions be constructed. These two cases and the correspondingW-gravity actions are considered in detail. Ind=2, the gauge group is effectively only a subgroup of the symplectic diffeomorphism group. Some of the constraints that arise ford=2 are similar to equations arising in the study of self-dual four-dimensional geometries and can be analysed using twistor methods, allowing contact to be made with other formulations ofW-gravity. While the twistor transform for self-dual spaces with one Killing vector reduces to a Legendre transform, that for two Killing vectors gives a generalisation of the Legendre transform.