Non-fermi-liquid scaling in Ce(Ru0.5Rh)2Si2

We study the temperature and field dependence of the magnetic and transport properties of the non-Fermi-liquid (NFL) compound Ce(Ru0.5Rh0.5)2Si2. For fields H less, similar0.1 T the results suggest that the observed NFL behavior is disorder driven. For higher fields, however, magnetic and transport properties are dominated by the coupling of the conduction electrons to critical spin fluctuations. The temperature dependence of the susceptibility as well as the scaling properties of the magnetoresistance are in very good agreement with the predictions of recent dynamical mean-field theories of Kondo alloys close to a spin-glass quantum critical point.     

Quantum critical 5f electrons avoid singularities in U(Ru,Rh)2Si2

We present specific heat measurements of 4% Rh-doped URu2Si2 at magnetic fields around the proposed metamagnetic transition field H(m) approximately 34 T, revealing striking similarities to the isotructural Ce analog CeRu2Si2 for H>H(m). This suggests that strongly renormalized hybridized-band models apply equally well to both systems. The vanishing bandwidths as H-->H(m) are consistent with a quantum-critical point close to H(m). The existence of a phase transition into an ordered phase in the vicinity of H(m) for 4% Rh-doped URu2Si2, but not for CeRu2Si2, is consistent with a stronger superexchange in the case of the U 5f system. Irreversible processes at the transition indicate a strong coupling of the 5f orbitals to the lattice, most suggestive of electric quadrupolar order.     

NMR Evidence of Antiferromagnetic Spin Fluctuations in Nd_(0.85)Sr_(0.15)NiO_2

Despite the recent discovery of superconductivity in Nd_(1-x)Sr_xNiO_2 thin films,the absence of superconductivity and antiferromagnetism in their bulk materials remains a puzzle.Here we report the ~1H NMR measurements on powdered Nd_(0.85)Sr_(0.15)NiO_2 samples by taking advantage of the enriched proton concentration after hydrogen annealing.We find a large full width at half maximum of the spectrum,which keeps increasing with decreasing the temperature T and exhibits an upturn behavior at low temperatures.The spin-lattice relaxation rate ~1T_1~(-1) is strongly enhanced when lowering the temperature,developing a broad peak at about 40 K,then decreases following a spin-wave-like behavior ~1T_1~(-1) ∝ T~2 at lower temperatures.These results evidence a short-range glassy antiferromagnetic ordering of magnetic moments below 40 K and dominant antiferromagnetic fluctuations extending to much higher temperatures.Our findings reveal the strong electron correlations in bulk Nd_(0.8)5Sr_(0.15)NiO_2,and shed light on the mechanism of superconductivity observed in films of nickelates.     

Piezoelectricity in La0.85Ce0.15MnO3 layer of BiFeO3/ La0.85Ce0.15MnO3 based ferroelectric/semiconductor oxide superlattice

Superlattice comprising of ferroelectric (FE) and non-ferroelectric (non-FE) material has been developed to induce a ferroelectric response in the non-ferroelectric layer. In this study, a superlattice thin film comprising of BiFeO₃ (BFO) as FE oxide and La_0.85Ce_0.15MnO₃ (LCMO) as semiconducting non-FE oxide is fabricated and investigated the FE and piezoelectric responses in LCMO. We observed the piezoelectric response of individual layers using time-resolved X-ray microdiffraction experiment under an external electric field. Piezoelectric response of individual layers was resolved by comparing it with the values obtained from kinematic diffraction calculation. Piezoelectric coefficient (d₃₃) of LCMO monolayer is found to be approximately 27 pm/V, which is a similar value as that of the BFO layer.     

Spin fluctuation of itinerant electrons in MnSi probed by μ+

Conclusion To our knowlge, this is the first experimental work to show the divergent behavior of 1/T₁ at T_C in weak itinerant ferromagnetic systems, and we conclude that there is general agreement between the present results and the SCR theory.Work supported by Japan Society for the Promotion of Science, the Toray Science Foundation, the Grant-in-Aid of the Japanese Ministry of Education, Culture and Science, and the Atomic Energy Control Board and National Research Council of Canada.     

Spin fluctuation in heavy fermion CeRu2Si2

Spin fluctuations of the archetypal heavy fermion compound CeRu2Si2 have been investigated by neutron scattering in an entire irreducible Brillouin zone. The dynamical susceptibility is remarkably well described by the self-consistent renormalization (SCR) theory of the spin fluctuation in a phenomenological way, proving the effectiveness of the theory. The present analysis using the SCR phenomenology has allowed us to determine 14 exchange constants, which show the long-range nature of the Ruderman-Kittel-Kasuya-Yosida interaction.     

Static and dynamic properties of R(Rh1−x Ru x )2Si2 probed by μSR (R=U,Nd,Ce)

Muon spin relaxation experiments have been carried out in the paramagnetic and magnetically ordered states of URh₂Si₂, U(Rh_0.35Ru_0.65)₂Si₂, NdRh₂Si₂ and CeRh₂Si₂. In order to obtain information on the localisation and diffusion properties of the muon, some measurements have been performed also on isostructural diamagnetic compounds. From our measurements. information on the magneto-crystalline anisotropy of the samples has been obtained. Depending on the compound, we found a static field distribution below the Néel temperature. We discuss the implications of this result on the magnetic properties of the various materials.     

Microstructure of thermoelectric (Bi0.15Sb0.85)2Te3 film

The film of thermoelectric ternary p-type (Bi_0.15Sb_0.85)₂Te₃ was deposited on polyimide foil substrate at 168 °C using direct-current magnetron sputtering. Microstructural investigations of the film were performed by electron microscopy techniques. SEM observations showed that the film surface consisted of large-sized particulates with small-sized particles and also mound-like crystal agglomerates in some areas. Chemical composition of the film was analyzed using energy-dispersive X-ray spectrometer (EDS). It has been observed that the EDS results were in an agreement with nominal composition for the film. Detailed microstructural investigations were carried out using transmission electron microscopy (TEM). TEM images and selected area electron diffraction patterns showed that the film has randomly oriented polycrystalline grain structure. High-resolution TEM images indicated that the microstructure of film also contained nano-crystal structure, smaller than 10 nm.     

Irreversible dynamics of the phase boundary in U(Ru0.96Rh0.04)2Si2 and implications for ordering

We report measurements and analysis of the specific heat and magnetocaloric effect-induced temperature changes at the phase boundary into the single magnetic field-induced phase (phase II) of U(Ru0.96Rh0.04)2Si2, which yield irreversible properties similar to those at the valence transition of Yb(1-x)Y(x)InCu4. To explain these similarities, we propose a bootstrap mechanism by which lattice parameter changes caused by an electric quadrupolar order parameter within phase II become coupled to the 5f-electron hybridization, giving rise to a valence change at the transition.     

Local and itinerant magnetism and superconductivity in R Rh2si2 (R = rare earth)

Magnetization and Mossbauer studies reveal that R Rh₂Si₂ (R = rare earth) have two magnetic phase transitions, one corresponding to the ordering of the rare earth (T^N = 27?130K) and the other to the itinerant electron ordering of the Rh sublattice (T^M= 5?17K). LaRh₂si₂ has also been studied by resistivity, specific heat and a.c. susceptibility measurements. All studies indicate that LaRh₂Si₂ orders magnetically at T^M= 7K and becomes superconducting, type II, at T^c= 3.8±0.2K.     

Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells

Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mus for an ensemble of free two-dimensional electrons confined in a Si/SiGe quantum well. The decoherence can be understood in terms of momentum scattering causing fluctuating effective Rashba fields. Further confining the electrons into a nondegenerate (other than spin) ground state of a quantum dot can be expected to eliminate this decoherence mechanism.     

Local-moment and itinerant antiferromagnetism in the heavy-fermion system Ce(Cu1−xNix)2Ge2

Elastic and inelastic neutron-scattering studies on the system Ce(Cu_1?xNi_x)₂Ge₂ are reported. These measurements are complemented by measurements of the magnetic susceptibility, high-field magnetization, heat capacity, thermal expansion, electrical resistivity and thermopower. The results reveal an interesting T-x phase diagram consisting of two different antiferromagnetic phases for x < 0.2 and 0.2 < x < 0.75, respectively, and a heavy-Fermi-liquid regime at higher Ni concentrations. The experimental results are interpreted in terms of an alloying-induced transition from local-moment to itinerant heavy-fermion magnetism. Fingerprints of this latter phase are a strongly reduced ordered moment and a short incommensurate ordering wave vector, in accord with theoretical predictions. A surprisingly good agreement between theory and experiment is found for x > 0.5. Further experimental evidence for different types of antiferromagnetic ordering derives from a line-shape analysis of the quasielastic neutron-scattering intensity, from magnetization and thermopower experiments.     

熔体旋甩法合成n型(Bi_(0.85)Sb_(0.15))_2(Te_(1-x)Se_x)_3化合物的微结构及热电性能

采用熔体旋甩结合放电等离子烧结(MS-SPS)技术制备了单相n型四元(Bi0.85Sb0.15)2(Te1-xSex)3(x=0.15,0.17,0.19,0.21)化合物,并对所得样品的微结构和热电传输性能进行了系统研究.样品自由断裂面的场发射扫描电子显微镜及抛光面的背散射电子成分分析表明:块体材料晶粒细小,晶粒排列紧密,成分分布均匀且相结构单一,样品中存在大量10—100nm的层状结构.随着Se含量x的增加,样品的电导率和热导率逐渐增加,而Seebeck系数逐渐降低.相比商业应用的区熔材料,MS-SPS方法合成的高Se组成的样品均在425K后表现出更高的ZT值,其中(Bi0.85Sb0.15)2(Te0.83Se0.17)3样品具有最高的ZT值,在360K可达到0.96,并在320—500K均保持较高的ZT值,500K时其ZT值相比区熔材料提高了48%.此外,通过调节Se的含量,可以有效地调控材料的ZT峰值出现的温度段,这对多级或梯度热电器件的制备具有重要意义.