The electron distribution in superconducting alloys: I. Analysis of V3Si at room temperature

Accurate X-ray diffraction data are used to obtain the charge distribution in the superconducting alloy V₃Si. The main interaction is found to be strong covalent bonding between adjacent vanadium atoms within the infinite chains. Integration of the charge around the Si and V atoms leads to a best estimate of 1.8–2.4 electrons for the charge transfer from the silicon to the vanadium atoms.     

Densities of phonon and electron states in V3Si and Cr3Si crystals

The regularization method has been used to solve the non-correct problem of finding out the phonon density of states from the temperature dependence of phonon heat capacity for two single crystals with A15 structure (the superconductor V₃Si and the non-superconductor Cr₃Si. The solution found agrees with the results of neutrongraphical and tunnel study. The electron density of states obtained in a narrow energy range near the Fermi level as the regularized solution of the reverse problem (from the temperature of the electron spin susceptibility) has at the Fermi energy the sharp maximum for V₃Si, but the flat minimum for Cr₃Si.     

The electron charge distribution in V3Si

The electron charge distribution in a martensitically transforming single- crystal of V₃Si in the superconducting state has been obtained from accurate X-ray diffraction measurements. The most significant differences between the electron density maps at room temperature and below the superconducting transition are the disappearance of the bond between the Si atom and the V-V bond on a chain at the lower temperature and the appearance of two anisotropic rings around each V-V bond at 13.5 K. By comparing our results with various physical properties, we conclude that, on cooling, V₃Si begins to anticipate a martensitic transformation at about 130 K even though this transformation does not actually occur before ～ 21 K.     

Cr<Superscript>3+</Superscript> spectroscopy study in ZnO-codoped and Zn-in-diffused congruent LiNbO<Subscript>3</Subscript>:Cr crystals

This paper reports on the spectroscopy properties, absorption and luminescence, of Cr³⁺ ions in singly doped, ZnO-codoped, and Zn in-diffused LiNbO₃:Cr crystals. In addition to the broad absorption, inter-ionic transitions ascribed to Cr³⁺ ions located in Li⁺ and Nb⁵⁺ sites; [Cr]_Li and [Cr]_Nb centres two absorption bands at higher energy are reported and ascribed to the charge transfer transitions of the Cr³⁺ ions of the two defect centres. The charge transfer transitions are used as optical probe to study the role of the Zn ions in the Zn in-diffused LiNbO₃:Cr samples. It has been observed that the Zn-in-diffused processes created [Cr]_Nb centres in the diffusion zone. The location of the diffused Zn²⁺ ions is considered to be in Li⁺ site, displacing the Cr³⁺ ions from the Li⁺ sites, [Cr]_Li, to the Nb⁵⁺ positions, [Cr]_Nb.     

A first-principles study on the lower-valence coexisting Cr2TiX (X=Al, Ga, Si, Ge, Sn, Sb) Heusler alloys

The electronic, magnetic, and bonding properties of the Cr₂TiX (X=Al, Ga, Si, Ge, Sn, Sb) Heusler alloys have been investigated using first-principles calculations. The results show that Cr₂TiSb exhibits a half-metallic nature and Cr₂TiGa and Cr₂TiSn exhibit a nearly half-metallic nature. From analysis of the density of states and the electron density difference along the Ga→Sn→Sb series for sp atoms, we found that the Cr-Ti bond demonstrates covalent character with more or less the ionic and metallic nature. In addition, the Cr-Ti bonding strength increases along this series. All the compounds have a negative total magnetic moment, most of which are confined to the Cr atoms. There exists a 1.0μ_B increasing trend of the total moment along the III→IV→V main group for sp atoms, and only the total moment of Cr₂TiSb coincides well with the Slater-Pauling behavior.     

Electron spin resonance in chromium doped VO2

Electron spin resonance has been studied in V_1?xCr_xO₂ crystals in the monoclinic insulating phase M₁(x<0.3%). Two distinct substitutional Cr³⁺ centers are observed. The two centers differ in their axial character which we interpret as due to different charge compensation mechanisms. One of the centers is preponderant at higher Cr concentrations (x>0.1%) and its spectrum can be interpreted by assuming charge compensation by a nearest neighbour V⁵⁺.     

Electron energy loss spectra from polycrystalline Cr and Cr2O3 before and after surface reduction by Ar bombardment

Electron energy loss spectra (ELS) have been obtained from polycrystalline Cr and Cr₂O₃ before and after surface reduction by 2 keV Ar⁺ bombardment. The primary electron energy used in the ELS measurements was systematically varied from 100 to 1150 eV in order to distinguish surface versus bulk loss processes. Two predominant loss features in the ELS spectra obtained from Cr metal at 9.0 and 23.0 eV are assigned to the surface and bulk plasmon excitations, respectively, and a number of other features arising from single electron transitions from both the bulk and surface Cr 3d bands to higher-lying states in the conduction band are also present. The ELS spectra obtained from Cr₂O₃ exhibit features that originate from both interband transitions and charge-transfer transitions between the Cr and O ions as well as the bulk plasmon at 24.4 eV. The ELS feature at 4.0 eV arises from a charge-transfer transition between the oxygen and chromium ions in the two surface layers beneath the chemisorbed oxygen layer, and the ELS feature at 9.8 eV arises from a similar transition involving the chemisorbed oxygen atoms. The intensity of the ELS peak at 9.8 eV decreases after Ar⁺ sputtering due to the removal of chemisorbed oxygen atoms. Sputtering also increases the number of Cr²⁺ states on the surface, which in turn increases the intensity of the 4.0 eV feature. Furthermore, the ELS spectra obtained from the sputtered Cr₂O₃ surface exhibit features characteristic of both Cr⁰ and Cr₂O₃, indicating that Ar⁺ sputtering reduces Cr₂O₃. The fact that neither the surface- nor the bulk-plasmon features of Cr⁰ can be observed in the ELS spectra obtained from sputtered Cr₂O₃ while the loss features due to Cr⁰ interband transitions are clearly present indicates that Cr⁰ atoms form small clusters lacking a bulk metallic nature during Ar⁺ bombardment of Cr₂O₃.     

Interpretation of auger energy shifts of silicon in solid silicon compounds

Chemical shifts of Auger transitions and photoelectron binding energies of silicon have been measured and interpreted using the quasi-atomic approach. The Si KL_2,3L_2,3 and L_2,3V₁V₁ Auger transitions and the binding energies of Si 2p and of the valence electrons at the maximum of the density of states V₁ have been investigated in solid silicon and in the compounds SiC, Si₃N₄, SiO₂, Na₂SiF₆ and T₃Si (T = V, Cr, Mn, Fe, Co, Ni). The relaxation-energy shift ΔR^ea_S(2p, 2p) describing the polarization effect (final-state effect) has been evaluated by AES and XPS measurements. Furthermore, the extra-atomic relaxation energy R^ea_D(2p) of the 2p electrons has been determined experimentally for silicon atoms in differing environments. This allows estimation of the potential parameter V(2p) describing the potential effect (initial-state effect). In general R^ea_D(2p) was found to be more sensitive to changes in chemical bonding than V2p). The behaviour of the quasi-atomic Si V₁ electrons seems to be the converse.     

Valence degeneracy in CaCu3Cr4O12

The synthesis of CaCu₃Cr₄O₁₂ has been accomplished at a pressure of 60 kbar. Analysis of single crystal X-ray diffraction data demonstrates that this compound is isostructural with CaCu₃Ti₄O₁₂. The electrical resistivity data for CaCu₃Cr₄O₁₂ show metallic behavior, and the magnetic susceptibility indicates delocalized electrons for both Cr and Cu. The Cu–O and Cr–O bond distances give fractional valences of Cu^2.45 and Cr^3.66, thus indicating both Cu and Cr 3d states at the Fermi level.     

Positron lifetimes in V3Si

From positron annihilation lifetime measurements on V₃Si single crystals we estimated that about 17.2% of the positrons annihilate with core electrons.     

Compton profile study of V3Ge and Cr3Ge

In this paper the results of a Compton profile study of two polycrystalline A15 compounds, namely, V₃Ge and Cr₃Ge, have been reported. The measurements have been performed using 59.54 keV γ-rays from an ²⁴¹Am source. The theoretical Compton profiles have been computed for both the compounds using ab-initio linear combination of atomic orbitals (LCAO) method employing CRYSTAL98. For both the A15 compounds, the isotropic experimental profiles are found to be in good overall agreement with the calculations. The comparison points out residual differences in V₃Ge whereas for Cr₃Ge the differences are within experimental error. The behaviour of valence electrons in the two iso-structural compounds has been examined on the scale of Fermi momentum. The valence electron distribution seems to be dominated by the metallic constituents rather than Ge and two compounds show covalent nature of bonding which is larger in V₃Ge compared to Cr₃Ge.      

Ab initio study of some fundamental properties of the M3X (M=Cr,V; X=Si,Ge) compounds

M₃X (M=Cr, V; X=Si, Ge) compounds are studied using first-principles calculations based on the Density Functional Theory (DFT). It is found that the bulk of Cr₃X (X=Si, Ge) compounds are comparable to those of Al₂O₃, the nearest-neighbor distance D_M−M and D_M−X in these compounds increase and the bulk modulus decrease, there is a strong interaction between M and M (M=Cr the interaction is stronger). Also the interaction between M (M=Cr, V) and X (X=Ge) is negative, an anti-bonding-type interaction is dominant between these atoms.     

Electrical characteristics of polycrystalline Si layers embedded into high-k Al2O3 gate layers

The electrical characteristics of polycrystalline Si (poly Si) layers embedded into high-k Al₂O₃ (alumina) gate layers are investigated in this work. The capacitance versus voltage (C-V) curves obtained from the metal-alumina-polysilicon-alumina-silicon (MASAS) capacitors exhibit significant threshold voltage shifts, and the width of their hysteresis window is dependent on the range of the voltage sweep. The counterclockwise hysteresis observed in the C-V curves indicates that electrons originating from the p-type Si substrate in the inversion condition are trapped in the floating gate layer consisting of the poly Si layer present between the top and bottom Al₂O₃ layers in the MASAS capacitor. Also, current versus voltage (I-V) measurements are performed to examine the electrical characteristics of the fabricated capacitors. The I-V measurements reveal that our MASAS capacitors show a very low leakage current density, compared to the previously reported results.     

EPR investigation of the trivalent chromium complexes in SrTiO3

The trivalent chromium centers were investigated by means of electron paramagnetic resonance (EPR) in SrTiO₃ single crystals grown using the Verneuil technique. It was shown that the charge compensation of the Cr³⁺-V_O dominant centers in octahedral environment is due to the remote oxygen vacancy located on the axial axis of the center. In order to provide insight into spin-phonon relaxation processes the studies of axial distortion of Cr³⁺-V_O centers have been performed as function of temperature. The analysis of the trigonal Cr³⁺ centers found in SrTiO₃ indicates the presence of the nearest-neighbor strontium vacancy. The next-nearest-neighbor exchange-coupled pairs of Cr³⁺ in SrTiO₃ has been analyzed from the angular variation of the total electron spin of S=2 resonance lines.     

EPR study of charge compensation of chromium centers in the strontium titanate crystal

Chromium centers and their charge compensation in two single strontium titanate crystals, i.e., SrTiO₃: Cr (0.05 at %) and Sr_0.9995TiO₃: Cr_0.0005 grown with strontium deficiency, have been studied by the electron paramagnetic resonance method. The crystals have been investigated both immediately after growth and after oxidation and reduction procedures. Oxidation and reduction are performed by crystal annealing in a corresponding gas atmosphere at high temperature. Chromium centers associated with oxygen vacancy (Cr³⁺-V _O) are detected in the reduced crystals. It is shown that strontium vacancies are formed in the crystal grown with strontium deficiency, which leads to a lowering of the tetragonal symmetry of (Cr³⁺-V _O) and Cr⁵⁺ centers to the orthorhombic symmetry. Possible compensation mechanisms for charges of various chromium centers are considered.     

Local structure distortion and spin Hamiltonian parameters for Cr3＋-Vzn tetragonal defect centre in Cr3＋ doped KZnF3 crystal

The quantitative relationship between the spin Hamiltonian parameters (D, g_‖, Δg) and the crystal structure parameters for the Cr³⁺—V_Zn tetragonal defect centre in a Cr³⁺:KZnF₃ crystal is established by using the superposition model. On the above basis, the local structure distortion and the spin Hamiltonian parameter for the Cr³⁺—V_Zn tetragonal defect centre in the KZnF_3 crystal are systematically investigated using the complete diagonalization method. It is found that the V_Zn vacancy and the differences in mass, radius and charge between the Cr³⁺ and the Zn²⁺ ions induce the local lattice distortion of the Cr³⁺ centre ions in the KZnF₃ crystal. The local lattice distortion is shown to give rise to the tetragonal crystal field, which in turn results in the tetragonal zero-field splitting parameter D and the anisotropic g factor Δg. We find that the ligand F^- ion along [001] and the other five F^- ions move towards the central Cr³⁺ by distances of Δ₁ = 0.0121 nm and Δ₂ = 0.0026 nm, respectively. Our approach takes into account the spin—orbit interaction as well as the spin—spin, spin—other-orbit, and orbit—orbit interactions omitted in the previous studies. It is found that for the Cr³⁺ ions in the Cr³⁺:KZnF₃ crystal, although the spin—orbit mechanism is the most important one, the contribution to the spin Hamiltonian parameters from the other three mechanisms, including spin—spin, spin—other-orbit, and orbit—orbit magnetic interactions, is appreciable and should not be omitted, especially for the zero-field splitting (ZFS) parameter D.     

Phase analysis in Zn1− x Cr x O through charge density

Cr-doped zinc oxide Zn_{1? x} Cr _x O powder samples are synthesized by a standard high-temperature solid-state reaction technique with x?=?0.00, 0.04, and 0.08. The powders are analyzed for the electron densities using X-ray diffraction. The electron densities of observed wurtzite phase ZnO as well as the spinel phase ZnCr₂O₄ are mapped and analyzed for Cr doping concentration. The charge density study reveals that the Cr atom is added in the lattice as Cr³⁺ rather than Cr²⁺.     

Radiation-induced electrical and optical processes in materials based on Al2O3

The irradiation of dielectrics induces electric charging of microscopic regions in the bulk, which is associated with concentration inhomogeneities in the system of traps and the differences in characteristic diffusion lengths of free electrons and holes that are produced in ion tracks and collision cascades. Experimental data on radiation-induced luminescence (RIL) give evidence of the existence of three states of oxygen vacancies in Al₂O₃: an optically inactive (electrically neutral) vacancy, its excited state (known as F ⁺ center), and a negatively charged vacancy (F center). The formation of negatively charged regions under irradiation increases the intensity of the 415-nm band of F centers of RIL of Al₂O₃ single crystals. In Al₂O₃:Cr³⁺ ceramics, a radiation-induced negative charging of grain boundaries with respect to the bulk of grains takes place, which manifests itself as an increase in the intensity of the 690-nm band of RIL of Cr³⁺ ions, whereas the intensity of this band in Al₂O₃:Cr³⁺ single crystals remains unchanged. Using data on RIL, the local-charge density in grains of Al₂O₃:Cr³⁺ ceramics and the field produced by this charge are estimated.     

Optical characterization of Cr3+ centers in LiNbO3

Low-temperature luminescence spectra of stoichiometric Cr:LiNbO₃, congruent Cr:LiNbO₃ and congruent Cr,Mg:LiNbO₃ were studied. Dominant low-field and minor high-crystal-field optical centers are the Cr³⁺ impurity ions that preferentially occupy Li⁺ sites (Cr_Li) in the Cr:LiNbO₃ crystals. Low-field centers related to Cr³⁺ substitution of Nb⁵⁺ (Cr_Nb) occur in addition to Cr_Li in co-doped Cr,Mg:LiNbO₃ samples. Application of high hydrostatic pressure leads to the transformation of dominant Cr³⁺ centers from low- to high-field type due to strong pressure-induced blue shift of the ⁴ T ₂ state, resulting in its crossing with the ² E state of Cr³⁺. This level-crossing effect was observed for the dominant Cr³⁺ _Li and Cr³⁺ _Nb centers at pressures that correlate well with estimations based on the ⁴ T ₂-² Eenergy gap (230 cm^-1 and 1160 cm^-1) and on the rate of their pressure-induced change (14.35 and 11.4 cm^-1/kbar, respectively). We also studied inhomogeneous broadeningof the ² E?⁴ A ₂transitions at ambient pressure for the minor high-field “defect” Cr³⁺ _Li centers in congruent LiNbO₃. A fine structure in the spectral response of these centers was observed. The obtained results are discussed on the basis of a microscopic hierarchic model for perturbed Cr³⁺ ions in the LiNbO₃ lattice. Received: 25 June 2001 / Published online: 2 November 2001     

Crystal field analysis of energy level structure of the Cr2O3 antiferromagnet

A detailed analysis of the energy level structure of the six-fold coordinated Cr³⁺ ion in the chromium oxide Cr₂O₃ is performed using the exchange charge model of the crystal field theory. Parameters of the crystal field acting on the Cr³⁺ optical electrons are calculated from the crystal structure data for the [CrO₆]⁹⁻ impurity center. The energy levels obtained are compared with the experimental absorption spectra for the considered crystal; a good agreement with experimental data is demonstrated. One possible explanation for the ultraviolet p₁ absorption band is proposed based on the results of crystal field calculations.