Interactions of germanium atoms with silica surfaces

GeH₄ is thermally cracked over a hot filament depositing 0.7-15 ML Ge onto 2-7 nm SiO₂/Si(1 0 0) at substrate temperatures of 300-970 K. Ge bonding changes are analyzed during annealing with X-ray photoelectron spectroscopy. Ge, GeH_x, GeO, and GeO₂ desorption is monitored through temperature programmed desorption in the temperature range 300-1000 K. Low temperature desorption features are attributed to GeO and GeH₄. No GeO₂ desorption is observed, but GeO₂ decomposition to Ge through high temperature pathways is seen above 750 K. Germanium oxidization results from Ge etching of the oxide substrate. With these results, explanations for the failure of conventional chemical vapor deposition to produce Ge nanocrystals on SiO₂ surfaces are proposed.     

Energetics of Ge nucleation on SiO2 and implications for selective epitaxial growth

We have measured the time evolution of Ge nucleation density on SiO₂ over a temperature range of 673–973 K and deposition rates from 5.1 × 10¹³ atoms/cm² s (5 ML/min) to 6.9 × 10¹⁴ atoms/cm² s (65 ML/min) during molecular beam epitaxy. The governing equations from mean-field theory that describe surface energetics and saturation nucleation density are used to determine the size and binding energy of the critical Ge nucleus and the activation energy for Ge surface diffusion on SiO₂. The critical nucleus size is found to be a single Ge atom over substrate temperatures from 673 to 773 K, whereas a three-atom nucleus is found to be the critical size over substrate temperatures from 773 to 973 K. We have previously reported 0.44 ± 0.03 eV for the Ge desorption activation energy from SiO₂. This value, in conjunction with the saturation nucleation density as a function of substrate temperature, is used to determine that the activation energy for surface diffusion is 0.24 ± 0.05 eV, and the binding energy of the three-atom nucleus is 3.7 ± 0.1 eV. The values of the activation energy for desorption and surface diffusion are in good agreement with previous experiments of metals and semiconductors on insulating substrates. The small desorption and surface diffusion activation barriers predict that selective growth occurring on window-patterned samples is by direct impingement of Ge onto Si and ready desorption of Ge from SiO₂. This prediction is confirmed by the small integral condensation coefficient for Ge on SiO₂ and two key observations of nucleation behavior on the window-patterned samples. The first observation is the lack of nucleation exclusion zones around the windows, and second is the independence of the random Ge nucleation density on patterned versus unpatterned oxide surfaces. We also present the Ge nucleation density as a function of substrate temperature and deposition rate to demarcate selective growth conditions for Ge on Si with a window-patterned SiO₂ mask.     

Specific heat of single phase Nb3Ge

For the first time, the specific heat of single phase, stoichiometric, high transition temperature (21.8 K) A-15 Nb₃Ge has been measured. From the data between 4 and 29 K, the linear term coefficient, γ, of the specific heat is found to be 30.3±1. mJ/mole-K² and the Debye temperature, ?_D, is 302±2 K. The bulk energy gap parameter, 2Δ/kT_c, is found to be 4.2±0.2, in agreement with tunneling measurements.     

Properties of Nb3Ge tapes for high field magnets

A laboratory process for long Nb₃Ge tapes fabrication by chemical vapor deposition (CVD) has been set up. The Nb₃Ge tapes which were fabricated offer the possibility of high current and high field operation at 4.2 K since the values of critical current densities, J_c, measured in high magnetic fields at 20T and 4.2K exceed 5 × 10⁴ A cm^?2 which is the generally accepted criterion for producing a superconducting magnet.     

Hyperfine Interactions in CeT2Ge2 (T = Mn,Co) Heavy Fermions Compounds Measured by TDPAC

Time Differential Perturbed γ–γ Angular Correlation (TDPAC) technique was used to measure the magnetic hyperfine field at both Ge and Ce sites in CeMn₂Ge₂ and CeCo₂Ge₂ intermetallic compounds. The ¹¹¹In (¹¹¹Cd) probe nuclei was used to investigate the hyperfine interaction at Ge sites, while the ¹⁴⁰La (¹⁴⁰Ce) nuclei was used to measure the magnetic hyperfine field at Ce site. The present measurements cover the temperature ranges from 10–460 K for CeMn₂Ge₂ and 9–295 K for CeCo₂Ge₂, respectively. The result for ¹¹¹Cd probe showed two distinct electric quadrupole frequencies above magnetic transition temperatures, in both compounds and a combined interaction in the magnetic region. The temperature dependence of the magnetic hyperfine field at ¹¹¹Cd at Mn site for the CeMn₂Ge₂ compound showed a transition from ferromagnetic to antiferromagnetic phase around 320 K and from antiferromagnetic to paramagnetic phase at 420 K. While a small magnetic field was measured on ¹¹¹Cd at Co site, no magnetic field on ¹⁴⁰Ce site was observed in CeCo₂Ge₂. This revised version was published online in September 2006 with corrections to the Cover Date.     

Heat capacity measurements on irradiated and non-irradiated Mo3Ge and Mo5Ge3

We have measured the heat capacity of irradiated and non-irradiated Mo₃Ge and Mo₅Ge₃ in the temperature range ≈ 1.6 to 10 K. An irradiation of 2.2 × 10¹⁹ neutrons cm^-2 results in an increase in the superconducting transition temperature T_c from < 1.6 K in the non-irradiated state to ～ 4 K after irradiation for Mo₃Ge and a corresponding change from < 1.6 K to ～ 3 K for Mo₅Ge₃. Our analysis shows that this change in T_c is not accompanied by a change in the electronic density of states (within experimental error) but rather a decrease in the Debye temperature from 392 to 322 K for Mo₃Ge and 377 to 320 K for Mo₅Ge₃.     

Formation mechanism of the primary faceted phase and complex eutectic structure within an undercooled Ag–Cu–Ge alloy

The solidified microstructure of bulk undercooled Ag₄₀Cu₃₀Ge₃₀ alloy consists of three parts: primary (Ge) phase, the complex structure of (Ag + Ge) and (Ag + ε ₂) pseudobinary eutectics, and (Ag + Ge + ε ₂) ternary eutectic. In comparison, the pseudobinary eutectic no longer appears in an alloy droplet solidified in a drop tube. Once the undercooling exceeds 225 K and the cooling rate is greater than 2×10³ K s⁻¹, the microstructure of the solidified droplet is totally composed of anomalous ternary eutectic. In both cases, the primary (Ge) phase exhibits various faceted growth morphologies at different undercoolings, such as columnar block, long dendrite, equiaxed dendrite and rod-like crystal. Some refined side branches grow from the equiaxed (Ge) dendritic branches composed of {111} twins, which is ascribed to the rapid epitaxial growth of (Ag + Ge) pseudobinary eutectic from the (Ge) dendritic branches. Moreover, both the primary (Ge) phase and the (Ge) phase in the (Ag + Ge) pseudobinary eutectic are effective heterogeneous nuclei for the (Ag+ε ₂) pseudobinary eutectic. As undercooling increases, the (Ge) phase in the (Ag + Ge+ε ₂) ternary eutectic transforms from faceted to non-faceted phase, while the independent nucleation and growth of the (Ag) and ε ₂ phases in the ternary eutectic displaces their previous cooperative growth. These growth kinetics transitions result in the formation of anomalous ternary eutectic.     

The sputtering of high Tc A15 Nb3Si and V3Ge

We report some initial results on the preparation of A15 Nb₃Si and V₃Ge using a getter sputtering technique. Under sufficiently clean conditions we observe an increase in the superconducting transition temperature. DC onsets in excess of 14 and 11 K have been observed for Nb₃Si and V₃Ge respectively. In each case a positive identification of the A15 phase has been made.     

Simultaneous calorimetric and quick‐EXAFS measurements to study the crystallization process in phase‐change materials

A Calvet‐type differential scanning calorimeter has been implemented on a synchrotron beamline devoted to X‐ray absorption spectroscopy. As a case study, the complex crystallization process in amorphous Ge₁₅Sb₈₅ phase‐change material is followed by simultaneous calorimetric and quick‐EXAFS measurements. A first crystallization at 514(1) K is related to the crystallization of an Sb‐rich phase accompanied by segregation of Ge atoms. Upon further heating, the as‐formed amorphous Ge regions crystallize at 604(1) K. A quantitative analysis of the latent heat allows a Ge₁₁Sb₈₉ stoichiometry to be proposed for the first crystallized phase.     

溅射沉积自诱导混晶界面与Ge量子点的生长研究

在不同的沉积温度下采用离子束溅射技术,在Si基底上生长得到分布密度高、尺寸单模分布的圆顶形Ge量子点.研究发现:随沉积温度的升高Ge量子点的分布密度增大,尺寸减小,当沉积温度升高到750 ℃时,溅射沉积15个单原子层厚的Ge原子层,生长得到高度和底宽分别为14.5和52.7 nm的Ge量子点,其分布密度高达1.68×10¹⁰ cm^-2;Ge量子点的形貌、尺寸和分布密度随沉积温度的演变规律与热平衡状态下气相凝聚的量子点不同,具有稳定形状特征和尺寸分布的Ge量子点是 关键词： Ge量子点 离子束溅射沉积 表面原子行为 混晶界面     

Synthesis of superconducting compounds by thermolysis of volatile hydrides and organometallic compounds on glowing wires

The synthesis of high temperature superconducting phases in the NbGe, NbSn, VSi, VGe, VSn, NbC and MoC systems is described by method consisting in the thermolysis of volatile hydrides or organometallic compounds on resistively heated wires. For face-centred cubic NbC a higher transition temperature than previously reported was obtained. The A15 phase boundary of NbGe is extended towards the stoichiometric 3:1 composition, affording samples of Nb₃ Ge with a T_c onset of 15.8°K.     

Magnetic characterization of Bi2FeMnO6 film grown on (100) SrTiO3 substrate

Single phase Bi₂FeMnO₆ films on (100) SrTiO₃ substrate were fabricated using a pulsed laser deposition method through optimization of the preparation conditions. The magnetic moment is 0.30μ_B at 5 K in the magnetic field of 1 T, indicating that B site cations of Fe and Mn are disordered in the sample. The zero‐field‐cooling (ZFC) and field‐cooling (FC) magnetization curves measured from 2 K to 400 K coincide at 360 K. This is consistent with the observation that hysteresis disappears at 360 K, revealing the antiferromagnetic transition at this temperature. A spin‐glass‐like behaviour was observed at low temperature (～100 K) with a cusp of 25 K. Mn shows multiple valence states in the film. It is possibly because Mn²⁺ and Mn⁴⁺ could decrease the Jahn–Teller effect from Mn³⁺ in the film which results in less lattice distortion. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Deposition of diamond structures from interacting gas jets

We have reported on the results of experiments on the gas-jet synthesis of diamond from methane and hydrogen flows for various mixing conditions. An original method of separate feed of gas jet has been proposed, which makes it possible to attain a high growth rate for the diamond phase. The synthesis of diamond structures in gas-jet deposition has been studied for separate feeds of two flows (hydrogen and the mixture of hydrogen with methane) in two versions, i.e., with a lateral feed of the methane-containing mixture and axisymmetric feed. Experiments were performed under the following conditions: the temperature of the surface (activating hydrogen) 2400 K, a substrate temperature of 900–1300 K, pressure in the deposition chamber 2 × 10² Pa, gas mixture fluxes (relative to hydrogen) 1500 ncm³/min, CH₄ concentration in H₂ of 0.1–0.7%, and the distance from the substrate to the reactor 10 mm. In the case of a separate feed of the methanecontaining gas and hydrogen, a deposition rate of 20 μm/h was attained. In the case of an axisymmetric separate feed of the gases, a single crystal with a mass of 0.6 mg was grown, which corresponded to the deposition rate of approximately 200 μm/h.     

Synthesis of Ge-Sn at high pressure and high temperature in a laser-heated diamond anvil cell

Ge–Sn compound is predicted to be a direct band gap semiconductor with a tunable band gap. However, the bulk synthesis of this material by conventional methods at ambient pressure is unsuccessful due to the poor solubility of Sn in Ge. We report the successful synthesis of Ge–Sn in a laser-heated diamond anvil cell (LHDAC) at ~7.6 GPa &; ~2000 K. In situ Raman spectroscopy of the sample showed, apart from the characteristic Raman modes of Ge TO (Г) and β-Sn TO (Г), two additional Raman modes at ~225 cm^?1 (named Ge–Sn₁) and ~133 cm^?1 (named Ge–Sn₂). When the sample was quenched, the Ge–Sn₁ mode remained stable at ~215 cm^?1, whereas the Ge–Sn₂ mode had diminished in intensity. Comparing the Ge–Sn Raman mode at ~225 cm^?1 with the one observed in thin film studies, we interpret that the observed phonon mode may be formed due to Sn-rich Ge–Sn system. The additional Raman mode seen at ~133 cm^?1 suggested the formation of low symmetry phase under high P–T conditions. The results are compared with Ge–Si binary system.     

Ion implantation damage and crystalline-amorphous transition in Ge

Experimental studies on the damage produced in (100) Ge substrates by implantation of Ge⁺ ions at different energies (from 25 to 600 keV), fluences (from 2×10¹³ to 4×10¹⁴ cm⁻²) and temperature (room temperature, RT, or liquid-nitrogen temperature, LN₂T) have been performed by using the Rutherford backscattering spectrometry technique. We demonstrated that the higher damage rate of Ge with respect to Si is due to both the high stopping power of germanium atoms and the low mobility of point defects within the collision cascades. The amorphization of Ge has been modeled by employing the critical damage energy density model in a large range of implantation energies and fluences both at RT and LN₂T. The experimental results for implantation at LN₂T were fitted using a critical damage energy density of ∼1 eV/atom. A fictitious value of ∼5 eV/atom was obtained for the samples implanted at RT, essentially because at RT the damage annihilation plays a non-negligible role against the crystalline–amorphous transition phase. The critical damage energy density model was found to stand also for other ions implanted in crystalline Ge (Ar⁺ and Ga⁺).     

Low thermal expansion behavior and transport properties of Ni and Ge co-doped manganese nitride materials at cryogenic temperatures

A series of Ni and Ge co-doped manganese nitride materials were fabricated by mechanical ball milling followed by solid-state sintering. Their thermal expansion properties and electrical and thermal conductivities were investigated in the temperature range of 77–300 K. The results show that Ni and Ge co-doped manganese nitride materials have negative thermal expansion (NTE), and the operation-temperature window of NTE shifts toward the lower temperature region and the variation of linear thermal expansion (ΔL/L _(300K)) in the operation-temperature window of NTE decreases with increasing Ni content. The combination of these two factors results in a low coefficient of thermal expansion (CTE) at cryogenic temperatures. The average CTE of Mn₃(Cu_0.2Ni_0.4Ge_0.4)N drops to ‘zero’ in the temperature range of 190–77 K. The values of electrical and thermal conductivities of the Ni and Ge co-doped manganese nitride materials are in the ranges of 2–3×10³ (ohm cm)⁻¹ and 1.6–3.4 W (m K)⁻¹, respectively.     

EPR observation of phase transitions in calcium cadmium acetate hexahydrate: Using Mn2+ and Cu2+ ions as probe

Results of temperature dependence of EPR spectra of Mn²⁺ and Cu²⁺ ions doped calcium cadmium acetate hexahydrate (CaCd(CH₃COO)₄·6H₂O) have been reported. The investigation has been carried out in the temperature range between room temperature (～ 300 K) and liquid nitrogen temperature. A I-order phase transition at 146 ± 0.5 K has been confirmed. In addition a new II-order phase transition at 128 ± 1 K has been detected for the first time. There is evidence of large amplitude hindered rotations of CH₃ groups which become frozen at ～ 128 K. The incorporation of Cu²⁺ and Mn²⁺ probes at Ca²⁺ and Cd²⁺ sites respectively provide evidence that the phase transitions are caused by the molecular rearrangements of the common coordinating acetate groups between Ca²⁺ and Cd²⁺ sites. In contradiction to the previous reports of a change of symmetry from tetragonal to orthorhombic below 140 K, the symmetry of the host is concluded to remain tetragonal in all the three observed phases between room temperature and liquid nitrogen temperature.     

Characteristics of a type-II n-MoS2/p-Ge van der Waals heterojunction

A few-atomic-layer molybdenum disulfide (MoS₂) film on Si/SiO₂ substrates grown by metal-organic chemical vapor deposition was investigated. The few-atomic-layer MoS₂ film was subsequently transferred onto a (100) p-Ge substrate to build a van der Waals n-p heterojunction. The as-grown few-atomic-layer MoS₂ film and the MoS₂/Ge heterostructure were characterized atomic force microscopy, spectroscopic ellipsometry, high-resolution scanning transmission electron microscopy, Raman spectroscopy analyses, photoluminescence (PL) measurements at room temperature (RT, 300 K), and type-II band alignment of the heterostructure determined by ultraviolet photoelectron spectroscopy. The RT-PL measurements showed dominant peaks at 1.96 and 1.8 eV for the as-grown MoS₂ and red-shifted PL peaks for that transferred onto Ge. We examined the electrical characteristics of the few-atomic-layer MoS₂ by forming a type-II band alignment van der Waals heterojunction with a highly doped p-Ge. The heterojunction solar cell exhibited an open-circuit voltage of 0.15 V and a short-circuit current density of 45.26 μA/cm². The external quantum efficiency measurements showed a spectral response up to approximately 500 nm owing to the absorption by the few-atomic-layer MoS₂ film.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Interaction of germanium with silicon dioxide

The interaction of germanium (Ge) adatoms with SiO₂ (silica) plays an important role in selective, heteroepitaxial growth of Ge(100) through windows created in silica on Si(100) and in the selective growth of Ge nanoparticles on hafnia, located at the bottom of pores etched through silica. Both processes rely on the inability of Ge to accumulate on silica. In hot wire chemical vapor deposition of Ge nanoparticles from GeH₄, etching of the silica has been invoked as one path to prevent accumulation of Ge on silica; whereas dense silica is not etched when Ge atoms are incident on the surface in molecular beam processes. Surface studies were conducted to determine the nature of oxidized Ge on SiO₂, to reconcile the etching claim with GeH₄, and to look for the additional etching product that must accompany GeO, namely SiO. Etching of silica is not found with GeH₄ or GeH_x fragments. A more complete examination of the Ge isotopes reveals instead the m/e 90 signal, previously attributed to GeO, originates from interactions between iron oxide impurities in the molybdenum holder, and hydrogen and GeH_x fragments. Coating the Mo with gold eliminates m/e 90 from Ge TPD spectra. The high temperature m/e 74 and m/e 2 peaks observed from 800 to 900 K are attributed to GeH_x decomposition to Ge and H followed by their desorption, while the appearance of GeO_x is attributed to possible reactions between GeH_x species with hydroxyl groups and/or oxidation of Ge clusters by background oxidants.