A finite fractal cluster theory of 1/f noise in percolation systems near metal-insulator transition

The problem of 1/f noise in thin metal films and metal-insulator composites in the scaling fractal regime near percolation threshold is considered. The correspondence between a percolation transition and a second order phase transition is extended from the point of view of electronic polarization and electrical fluctuations. The charge fluctuations on finite fractal clusters are argued to be analogous to spontaneous order parameter fluctuations in phase transitions, being correlated upto percolation correlation length. The charge relaxation times are shown to be related to the cluster sizes having distribution function of the formg()^–b , whereb is connected to Euclidean and fractal dimensionalities and critical exponents. This produces the 1/f noise spectrum. Below percolation threshold, the nodes-links-blobs picture is invoked such that the blobs represent metallic conductances of the finite clusters and the links are tunnelling conductances between them through narrowest barrier regions. Above threshold, the finite cluster network is visualized as connected to the infinite cluster through narrowest tunnelling regions. The correlated spontaneous charge fluctuation on finite fractal clusters is held responsible for conductance fluctuation on either side of the metal-insulator transition via tunnelling processes. Finally, the scaling behaviour of noise magnitude near percolation threshold is explained.     

A theory of 1/f noise

Letu() be an absolutely integrable function and define the random process where thet _i are Poisson arrivals and thes _i, are identically distributed nonnegative random variables. Under routine independence assumptions, one may then calculate a formula for the spectrum ofn(t), S _n(), in terms of the probability density ofs, p_s(). If any probability density p_s() having the property p_s() I for small is substituted into this formula, the calculated S_n() is such that S_n() 1 for small . However, this is not a spectrum of a well-defined random process; here, it is termed alimit spectrum. If a probability density having the property p_s() for small , where > 0, is substituted into the formula instead, a spectrum is calculated which is indeed the spectrum of a well-defined random process. Also, if the latter p_s is suitably close to the former p_s, then the spectrum in the second case approximates, to an arbitrary, degree of accuracy, the limit spectrum. It is shown how one may thereby have 1/f noise with low-frequency turnover, and also strict 1/f ^1– noise (the latter spectrum being integrable for > 0). Suitable examples are given. Actually, u() may be itself a random process, and the theory is developed on this basis.     

1/f noise in varistors

An experimental investigation was made of low-frequency fluctuations of the open-circuit voltage of mass-produced Varistors made of silicon carbide. It was concluded that the main charge transport mechanism in varistors may be the Frenkel ionization of impurities.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 11–15, November, 1980.     

Origin of 1/f(alpha) noise in membrane channel currents

The transport characteristics of nanofabricated synthetic pores of similar dimensions to those of biological channels is reported. By comparison of the ion current through single synthetic and biological channels we show that the 1/f(alpha) noise indeed originates from the channel's opening-closing process. Strong evidence has been provided that the latter is related to the underlying motions of channel wall constituents.     

金属薄膜电迁移1/f噪声与1/f2噪声统一模型

应用晶粒边界自由体积的概念建立了能够统一描述金属薄膜1f噪声与1f2噪声的模型.该模型表明,结构完整的多晶金属薄膜产生的电噪声为1f噪声,当金属薄膜受到电迁移损伤而形成空洞时就会引入1f2噪声的成分.在电迁移应力实验中,观察到金属薄膜1fγ噪声在空洞成核前γ约为10,一旦发生空洞成核,即突增至16以上,这一规律与本模型的预测相符合 关键词： 金属薄膜 1fγ噪声 电迁移 自由体积     

Decomposition of 1/f noise in Al(x)Ga(1-x)As/GaAs Hall devices

We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from Al(x)Ga(1-x)As/GaAs heterostructures. In a sample with feature size as small as 0.45 microm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped Al(x)Ga(1-x) layer is resolved into a single Lorentzian spectrum.     

Quantum percolation tunneling current 1/f~γ noise model for high-κ gate stacks Bi-layer breakdown

Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.     

CMOS 1/f noise: n-channel versus p-channel

This note reports on the noise of CMOS devices. It is shown experimentally that a weak boron threshold implant (10¹² cm^–3) can influence the 1/f noise levels. For wafers with threshold adjustment the p-channel noise decreases whilst the n-channel noise increases. The changes in the n/p noise ratio with/without threshold implantation are predicted using a simple model in conjunction with carrier profile simulations.     

Quantum chaos and 1/f noise

It is shown that the energy spectrum fluctuations of quantum systems can be formally considered as a discrete time series. The power spectrum behavior of such a signal for different systems suggests the following conjecture: The energy spectra of chaotic quantum systems are characterized by 1/f noise.     

The so-called 1/Δ f noise

A sinusoidal ac current of frequeencyf _c generates an excess noise in many solidstate conductors. The power spectrum of this noise is calculated starting from the autocorrelation function of the stochastic process. Besides a 1/Δf term the spectrum includes another contribution varying with 1/(f _c+f). In the low frequency range there is white noise.     

Fluctuation spectrum in an exactly solvable model with dissipation: A new model of the Flicker noise

A system is considered consisting of a harmonic oscillator and a field interacting with it. A quadratic Lagrangian is used, so that the model is exactly solvable. Under some conditions, the model exhibits a dissipative behavior of a selected oscillator. A canonical transformation is found which brings the Hamiltonian to a diagonal form, which is used to compute the quantum correlation and spectral functions of the oscillator fluctuations. It is found that the model allows for a low-frequency spectrum of the form for the driving force, and for the oscillator coordinate (Flicker noise).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 13–18, October, 1990.     

On the interpretation of 1/f noise

We propose a model of 1/f noise based on a random walk in a random potential. Numerical support for the model is given, and physical applicability discussed.