rf-偏置超导隧道结的周期次谐波和混沌现象研究

本文利用全电流超导隧道结电子模拟器研究了dc与rf电流激励超导隧道结 .在固定rf激励频率和阻尾的条件下 ,随着rf激励幅度增加 ,初步观察到了系统的周期、次谐波和混沌解的无穷尽序列现象 .     

直接耦合双耦合环高温超导dcSQUID中增大有效面积的图形设计

设计和制作了一种新型的双耦合环的直接耦合高Tc dc SQUID结构。根据Y.Zhang等在高Tc rf SQUID中用图形填充内孔使电感减小的原理，在直接耦合dc SQUID中，用在耦合环内孔中图形填充的方法减小电感，进而增大Ap/Lp，以增大总的有效面积。用双晶衬底所做的对比实验表明，对于我们所设计的几何结构，有效面积增大了17%。     

含有两个约瑟夫森结的射频SQUID的本征磁通噪声

我们研究了双结射频超导量子干涉器件（rf SQUID）的含时特性，给出了总磁通的动力学方程，并分析了在回滞模式和非回滞模式下的本征磁通噪声。结果显示：两个结的临界电流差别越大则越有助于获得小的本征噪声，在这种情况下，双结rf SQUID的本征磁通噪声会比单结rf SQUID的噪声稍大，但不超过一个数量级。     

Fabrication and Frequency Response Characteristics of A1N-Based Solidly Mounted Resonator

Film bulk acoustic resonator （FBAR） with solidly mounted resonator （SMR）-type is carried out by rf magnetic sputtering. To fabricate SMR-type FBAR, alternative high and low acoustic impedance layers, Mo/Ti multilayer, are adopted as Bragg reflector deposited by dc magnetron sputtering. The influences of sputtering pressure, substrate temperature and sputtering power on the surface roughness of Bragg reflector layer are discussed. From the atom force microscopy （AFM） analysis, the surface roughness of the Bragg reflector is improved remarkably by controlling deposition conditions. Under the appropriate sputtering condition, AlN thin films with highly c-axis-preferred orientation are deposited by rf magnetron sputtering. The performance of fabricated Mo/Ti SMR shows that the electromechanical coupling coefficient is 3.89%, the series and parallel resonant frequencies appear at 2.49 and 2.53 GHz, with their quality factors 134.2 and 97.6, respectively.     

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

We report dc and the first-ever measured small signal rf performance of epitaxial graphene field-effect transistors （GFETs）, where the epitaxial graphene is grown by chemical vapor deposition （CVD） on a 2-inch c-plane sapphire substrate. Our epitaxial graphene material has a good flatness and uniformity due to the low carbon concentration during the graphene growth. With a gate length Lg = 100 nm, the maximum drain source current Ids and peak transconductance gm reach 0.92 A/mm and 0.143 S/mm, respectively, which are the highest results reported for GFETs directly grown on sapphire. The extrinsic cutoff frequency （fT） and maximum oscillation frequency （fmax） of the device are 12 GHz and 9.5 GHz, and up to 32 GHz and 21.5 GHz after de-embedding, respectively. Our work proves that epitaxial graphene on sapphire substrates is a promising candidate for rf electronics.     

一种改进的谐振参数扰动法及其在DC/DC变换器混沌控制中的应用

种改进的谐振参数扰动法来控制混沌，该混沌控制方法引入了基于非线性映射的调制，其控制目标可以是任意周期的轨道，而不是原混沌吸引子中的嵌入轨道。作为一个应用实例，文中描述了该方法在电流模式控制dc/dc变换器中的应用结果。     

高Tc dc SQUID 1/f噪声的抑制

本文采用偏置电流反转的频率与磁通调制频率相等的方案,研制了带偏置电流反转的dc SQUID测试系统,明显降低了YBCO双晶结dc SQUID的1/f噪声.在3Hz处,磁通噪声由静态偏置时的降低到.1/f噪声的角频率从1kHz下降到3Hz.前放的设计,采用低噪声集成电路,整个磁通锁定环置于测试杆顶端,简化了电路,提高了测试系统的稳定性.在白噪声区,测得最低磁通噪声为 .前放的噪声系数为1.1dB.     

Landau–Zener–Stückelberg Interference in Nonlinear Regime

Landau–Zener–Stückelberg(LZS) interference has drawn renewed attention to quantum information processing research because it is not only an effective tool for characterizing two-level quantum systems but also a powerful approach to manipulate quantum states. Superconducting quantum circuits, due to their versatile tunability and degrees of control, are ideal platforms for studying LZS interference phenomena. We use a superconducting Xmon qubit to study LZS interference by parametrically modulating the qubit transition frequency nonlinearly.For dc flux biasing of the qubit slightly far away from the optimal flux point, the qubit excited state population shows an interference pattern that is very similar to the standard LZS interference in linear regime, except that all bands shift towards lower frequencies when increasing the rf modulation amplitude. For dc flux biasing close to the optimal flux point, the negative sidebands and the positive sidebands behave differently, resulting in an asymmetric interference pattern. The experimental results are also in good agreement with our analytical and numerical simulations.     

PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING

Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.     

非均匀等离子体中rf波电流驱动理论

本文用Green函数法求解准线性Fokker-Planck方程,得到非均匀等离子体中rf波的电流驱动效率。结果表明:考虑非均匀性以后,驱动效率显著提高,并且驱动效率随β值的增大而降低。 关键词：     

光栅与全息照相

基于普物光学的双光束干涉和光栅衍射，定性分析全息照相。     

相干重整化与DIA

本文利用相干重整化的概念,从响应函数R和逆介电函数ε^-1的基本定义出发,建立了它们的微扰表达式。把所得到的基本关系和MSR体系的类似关系进行比较,指出至少在六级微扰之内二者在形式上符合得相当好,从而验证了相干重整化方案的合理性。对相干重整化与MSR体系之间的差异做了进一步的分析,并对它与DIA的关系做了某些讨论。 关键词：     

一个温度自动精密测控实验的设计与分析

本文给出一个温度自动精密测控实验的设计方案，并详细说明该实验系统应用于生产实际所遇到的主要技术问题的解决措施。     

测量螺线管磁场的误差与修正

阐述实验验证螺线管磁场分布时理论与实验结果的差异原因及修正方法。     

世界上第一个物理技术研究所的建立及其影响

德国夏洛滕堡物理技术研究所（The Physikallisch-Technische Reichanstalt,简称PTR）是世界上第一个国家级的物理技术研究所，它开创了科学研究和技术研究相结合，服务于工业和国家经济之先河。文章从PTR建立的历史背景、早期研究工作和所产生的影响等方面作较为全面的讨论。     

红外光谱和拉曼光谱的联系和区别

文章综述红外光谱和拉曼光谱的基本原理、产生条件,讨论二者之间的联系和区别：（1）红外光谱常用于研究极性基团的非对称振动;拉曼光谱常用于研究非极性基团与骨架的对称振动;（2）拉曼光谱一次可以同时覆盖40-4000cm-1波数的区间,可对有机物及无机物进行分析;（3）拉曼光谱可测水溶液,而红外光谱不适用于水溶液的测定;（4）拉曼光谱中既有红外光谱解析中的定性三要素还有去偏度ρ,通过测定ρ,可以确定分子的对称性.这两者在应用中互补,掌握和运用这两种光谱技术在分子定性、定量、分子结构及表面形态等研究方面具有一定的指导意义.     

晶体表面弛豫和重构的规律与机理

此文综述了原子、离子和金属晶体清洁表面的驰豫和重构的规律与机理。     

中微子的静止质量及其在物理学和宇宙学上的意义

简要地介绍了中微子的发现历史及其基本特性,着重介绍了Ｓｕｐｅｒ－Ｋａｍｉｏｋａｎｄｅ中微子天文台大气中微子实验和太阳中微子实验的基本原理及其最新实验结果,对中微子的静止质量在太阳中微子失踪问题、粒子物理学和宇宙学上的意义作了讨论,指出了与中微子静止质量相关的３个有待解决的问题。     

电磁AB效应与描述电磁场的基本物理量

本文通过介绍电磁ＡＢ效应及其实验验证，论证了描述电磁场的基本物理量应为规范条件约束下的电磁势（φ，Ａ），而不是场量（Ｅ，Ｂ）．