A cold thermionically emitting dusty air plasma formed by radiativeheating of graphite particulates

Formation of an atmospheric pressure dusty air plasma is explored experimentally in this paper. The plasma is created by seeding an air flow with graphite particles and irradiating the particulates with a focused CO₂ laser beam. The graphite particles are, thus, heated to thermionically emitting temperatures, and average particle temperatures and average particle number densities are measured. The presence of charges is inferred both from these measured quantities using a simple theoretical transient model, and experimentally by applying a dc bias across the irradiated region. It is found that an electron density of ~6.7 × 10⁵ cm^-3 (6.7 × 10¹¹ m^-3) can be produced at steady state in the presence of O₂. This value can be increased to 3.6 × 10⁷ cm^-3 (3.6 × 10¹³ m ^-1) in the ideal case where an electron attachment to O₂ is suppressed and where a lower work function particulate is used     

Experimental study of CF4 conical theta pinch plasmaexpanding into vacuum

Langmuir probe, photodiode, and optical multichannel analyzer (OMA) measurements have been made on a pulsed CF₄ conical theta-pinch plasma. A cloud of CF₄ was puffed into a conical theta-pinch coil, converted to plasma, and propelled into the vacuum region ahead of the expanding gas cloud. At a position 67 cm away from the conical theta-pinch coil, the plasma arrived in separate packets that were about 20 μs in duration. The average drift velocity of these packets corresponded to an energy of about 3 eV. The OMA measurements showed that the second packet contained neutral atomic fluorine as well as charged particles. The electron temperature and ion density in the second packet were 2.0 eV and 1.5×10¹³ cm^-3, respectively. The electron temperature and ion density in the wake plasma were 8.3 eV and 4×10¹¹ cm^-3 , respectively. This device can be used for plasma processing or as a laboratory test of numerical and analytical models of the expansion of plasma into vacuum     

On a possible dust-plasma interaction at Mars

According to present theoretical models, material ejected from the Martian satellite Phobos due to meteoroid bombardment and tidal coupling can stay for a long time in circular orbits near the planet, forming a dust belt. The dust particles are moving through various plasma domains of the Martian magnetosphere and may undergo electrostatic disruption there, producing very fine motes in the range 0.005-0.1 μm which can stay positively charged for a time comparable with the orbital period. A negatively charged spacecraft will attract such particles and an ion spectrometer with wide enough mass range (1-10⁸ amu/Q, where Q is the particle charge) may detect these grains. The model can explain observations made by the ASPERA mass spectrometer during the PHOBOS mission when signals in the mass channels 10³-10⁷ amu were detected inside the Martian magnetosphere. The evolution of a grain orbiting Mars is shown in a diagram of the particle size-particle potential. Such a diagram gives a qualitative picture of the grain interaction with the Martian plasma environment     

Carrier and mobility profile measurements in n-type ion-implanted GaAs by the differential sheet resistivity and Hall effect technique

Multiple energy ion implantation facilities have been used to prepare essentially box-shaped dopant profiles in GaAs with plateau concentrations between 2 x 10¹⁶ and 8 x 10¹⁷ cm^-3. The implanted species was ²⁸Si⁺. The ion energies ranged between 40 and 400 keV. The depletion depth correction applied to the carrier and mobility profiles in the plateaux did not affect the data values but only their depth scale. Thus, in these regions the measured data (without any feed-back correction) were used to study the electrical properties of the implanted layers. Doping efficiencies between 65% and 81% and carrier mobilities in the range 3000 to 6000 cm² V^-1s^-1 were measured. Activation thresholds in the range 10¹⁵ to 10¹⁶ cm^-3 were estimated.     

Plasma parameters within the cathode spot of the vacuum arc

The composition of the vacuum arc plasma for five elements (Cd, Mg, Al, Ni, and Mo) is calculated by the Saha equation, which assumes local thermodynamic equilibrium conditions within the ionization region of the cathode spot(s). The lowering of the ionization potential due to the high density of charged particles is considered. By matching the computed and the measured plasma ionic composition, the electron density and the temperature are estimated. The experimental plasma compositions can be approximated only at a high electron density (10¹⁹-10 ²¹ cm^-3) and at electron temperatures in the range of a few electronvolts     

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

In this study,we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene)(P3HT) and a methanofuUerene derivative(PCBM).Organic semiconductors are also known to be not pure and they have defects and impurities,some of them are being charged and act as p-type or n-type dopants.Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings(N_d) that consist of 5 × 10~(17) cm~(-3),10~(18) cm~(-3),and 5 × 10~(18) cm~(-3).We perform the analysis of the doping concentration through the drift-diffusion model,and calculate the current and voltage doping dependency.We find that at three different n-dopant levels,optimum p-type doping is about N_p = 6 × 10~(18) cm~(-3).Simulation results have shown that by increasing doping level,V_(oc) monotonically increases by doping.Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p = 3 × 10~(18) cm~(-3).Moreover,this paper demonstrates that the optimum value for the p-doping is about N_p = 6 × 10~(18) cm~(-3) and optimum value for n-dopant is N_d = 10~(18) cm~(-3),respectively.The simulated results confirm that doping considerably affects the performance of organic solar cells.     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

Enhanced laser-induced plasma channels in air

Plasma is a significant medium in high-energy density physics since it can hardly be damaged. For some applications such as plasma based backward Raman amplification(BRA), uniform high-density and large-scale plasma channels are required. In the previous experiment, the plasma transverse diameter and density are 50–200 μm and 1–2 × 10~(19)cm~(-3),here we enhance them to 0.8 mm and 8 × 10~(19)cm~(-3), respectively. Moreover, the gradient plasma is investigated in our experiment. A proper plasma gradient can be obtained with suitable pulse energy and delay. The experimental results are useful for plasma physics and nonlinear optics.     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

N极性GaN/AlGaN异质结二维电子气模拟

通过自洽求解薛定谔方程和泊松方程,较系统地研究了GaN沟道层、AlGaN背势垒层、Si掺杂和AlN插入层对N极性GaN/AlGaN异质结中二维电子气(2DEG)的影响,分析表明,GaN沟道层厚度、AlGaN背势垒层厚度及Al组分变大都能一定程度上提高二维电子气面密度,AlGaN背势垒层的厚度和Al组分变大也可提高二维电子气限阈性,且不同的Si掺杂形式对二维电子气的影响也有差异,而AlN插入层在提高器件二维电子气面密度、限阈性等方面表现都较为突出,在模拟中GaN沟道层厚度小于5nm时无法形成二维电子气,超过20nm后二维电子气面密度趋于饱和,而AlGaN背势垒厚度超过40nm后二维电子气也有饱和趋势,对均匀掺杂和delta掺杂而言AlGaN背势垒层Si掺杂浓度超过5×10~(19)cm~(-3)后2DEG面密度开始饱和,而厚度为2nmAlN插入层的引入会使2DEG面密度从无AlN插入层时的0.93×10~(13)cm~(-2)提高到1.17×10~(13)cm~(-2)。     

恒星的星核区坍缩与物态方程(一)——坍缩计算输入物理因素

本文采用由自由核子,α粒子及平均重核组成的核统计平衡模型描述由自由核子和许多种类原子核组成的系铣。由半径验核质量及核激发态熵公式描述核的性质,给定系统温度、密度及电子浓度y_e,由系统自由能在电中性及强子数守恒约束下求极小得我们的物态方程EOS(Ⅰ),并与E1 Eid等物态方程(在密度ρ~10⁹-10¹²g cm^-3)和与Lgmb等物态方程(在ρ~10¹²-10¹⁴g cm^-3,ye=0.3,σ=1.5k)作了比较,符合程度较好。本文对电子俘获率也作了更细致的考虑。     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

温稠密钛电导率计算

温稠密物质是惯性约束核聚变、重离子聚变、Z箍缩动作过程中物质发展和存在的重要阶段. 其热力学性质和辐射输运参数在聚变实验和内爆驱动力学模拟过程中有至关重要的作用. 本文通过建立非理想Saha方程, 结合线性混合规则的理论方法模拟了温稠密钛从10^-5-10 g·cm^-3, 10⁴ K到3×10⁴ K区间的粒子组分分布和电导率随温度密度的变化, 其中粒子组分分布由非理想Saha方程求解得到. 线性混合规则模型计算温稠密钛的电导率时考虑了包括电子、原子和离子之间的多种相互作用. 钛的电导率的计算结果与已有的爆炸丝实验数据相符. 通过电导率随温度密度变化趋势判断, 钛在整个温度区间, 密度0.56 g·cm^-3时发生非金属相到金属相相变. 对于简并系数和耦合系数的计算分析, 钛等离子体在整个温度和密度区间逐渐从弱耦合、非简并状态过渡到强耦合部分简并态.     

Microwave resonant-cavity-produced air discharges

Air discharges produced in an Asmussen microwave cavity (0-300 W, 2.45 GHz, CW) between 0.5 and 100 torr were investigated. Gas temperatures (1000-2500 K) were estimated from rotational temperatures obtained from optical emission spectroscopy (OES). These agreed with a simple model of the heat transfer of the gas where joule heating was included as the source term. Vibrational temperatures (3700-7300 K) were also determined from OES and followed the electron energy trends. Electron density (10¹¹-10¹³ cm^-3), collisional frequency (10¹¹-10¹² s^-1), and plasma conductivity (0.09-0.3 (Ω-m)^-1) were calculated from a self-consistent electromagnetic model of the cavity where the plasma was assumed to be a lossy dielectric. Absorbed power, electric, and optical probe measurements were used as the input parameters to the model     

Dense pair plasma generation by two laser pulses colliding in a cylinder channel

An all-optical scheme for high-density pair plasmas generation is proposed by two laser pulses colliding in a cylinder channel. Two dimensional particle-in-cell simulations show that, when the first laser pulse propagates in the cylinder,electrons are extracted out of the cylinder inner wall and accelerated to high energies. These energetic electrons later run into the second counter-propagating laser pulse, radiating a large amount of high-energy gamma photons via the Compton back-scattering process. The emitted gamma photons then collide with the second laser pulse to initiate the Breit–Wheeler process for pairs production. Due to the strong self-generated fields in the cylinder, positrons are confined in the channel to form dense pair plasmas. Totally, the maximum density of pair plasmas can be 4.60 × 10~(27)m~(-3), for lasers with an intensity of 4×10~(22)W·cm~(-2). Both the positron yield and density are tunable by changing the cylinder radius and the laser parameters. The generated dense pair plasmas can further facilitate investigations related to astrophysics and particle physics.     

The atmospheric-pressure plasma jet: a review and comparison toother plasma sources

Atmospheric-pressure plasmas are used in a variety of materials processes. Traditional sources include transferred arcs, plasma torches, corona discharges, and dielectric barrier discharges. In arcs and torches, the electron and neutral temperatures exceed 3000°C and the densities of charge species range from 10¹⁶-10¹⁹ cm^-3. Due to the high gas temperature, these plasmas are used primarily in metallurgy. Corona and dielectric barrier discharges produce nonequilibrium plasmas with gas temperatures between 50-400°C and densities of charged species typical of weakly ionized gases. However, since these discharges are nonuniform, their use in materials processing is limited. Recently, an atmospheric-pressure plasma jet has been developed, which exhibits many characteristics of a conventional, low-pressure glow discharge. In the jet, the gas temperature ranges from 25-200°C, charged-particle densities are 10 ¹¹-10¹² cm^-3, and reactive species are present in high concentrations, i.e., 10-100 ppm. Since this source may be scaled to treat large areas, it could be used in applications which have been restricted to vacuum. In this paper, the physics and chemistry of the plasma jet and other atmospheric-pressure sources are reviewed     

激光等离子体二维相对论电磁粒子模拟

研制了激光等离子体二维相对论电磁粒子模拟程序(2DCIC)。追踪几万甚至百万个模拟粒子在外加激光场和自洽场中运动,自洽地计算电荷和电流密度,求解完全的Maxwel方程,电子的相对论运动方程和离子的牛顿运动方程,辅以灵活的诊断研究波-波,波-粒子相互作用的发生、发展和饱和的细节以及时间演化规律。激光可以正入射,也可以斜入射;等离子体可以是均匀密度,也可以具有密度梯度;为了节约机时,还发展了并行运算。物理模型参数可调,既适用于研究激光聚变等离子体相互作用,也适用于超短脉冲超强激光等离子体相互作用和其它等离子体问题。经过多次试算检验,对等离子体平衡态进行了计算研究,对于超短脉冲超强激光的传播也进行了初步模拟计算。     

衬底温度对ZnO薄膜的结构和光学特性的影响

利用等离子体辅助分子束外延(P-MBE)设备在蓝宝石衬底上通过改变生长温度,制备了不同的ZnO样品.研究了衬底温度对ZnO的结构、光学和电学性质的影响.样品的晶体结构利用X射线衍射谱进行表征.X射线衍射谱表明,所有的ZnO样品都是(002)取向的六角纤锌矿结构.随着生长温度的升高,X射线的(002)衍射峰的半峰全宽逐渐...     

量子电动力学—粒子模拟极端等离子体动力学研究

新一代拍瓦激光装置有望将激光强度提升至10²³~10²⁴ W·cm^-2,在此极端强场条件下非线性量子电动力学效应对等离子体动力学过程产生重要影响.相对论电子在强电磁场作用下会同步辐射大量伽马光子,当后者穿过超强电磁场时会级联产生正负电子对.与此同时,这些量子电动力学效应也会反作用于激光等离子体相互作用过程,如辐射阻尼严重影响电子运动过程.为了研究这样极端的等离子体动力学,我们介绍最近几年发展的量子电动力学数值模拟模块,并将其耦合到传统的粒子模拟程序中,即量子电动力学-粒子模拟程序.由于大量新辐射的光子和产生的正负电子对会造成模拟粒子数目的不断增加,我们发展了粒子融合技术来减小模拟规模.利用此量子电动力学-粒子模拟程序,我们对极端强场激光物质相互作用以及极端天体物理现象开展了数值模拟研究.     

低速Xe~(q+)(4≤q≤20)离子与Ni表面碰撞中的光辐射

实验中测量了0.38V_(Bohr)(460 keV)高电荷态Xe~(q+)(4≤q≤20)离子轰击高纯Ni表面发射的400-510 nm光谱.实验结果包括NiⅠ原子谱线,NiⅡ离子谱线,以及入射离子中性化发射的XeⅠ,XeⅡ和XeⅢ谱线.研究了谱线XeⅡ410.419,XeⅢ430.444,XeⅡ434.200,XeⅡ486.254,NiⅠ498.245,NiⅠ501.697,NiⅠ503.502,NiⅠ505.061和NiⅠ508.293 nm的光子产额随着入射离子电荷态的变化.结果表明,入射离子中性化和溅射Ni原子发射谱线的光子产额随着入射离子电荷态的增加而增加,其趋势与入射离子势能一致.