Reentrant layering in rare gas adsorption: preroughening or premelting?

The reentrant layering transition found in rare gas adsorption on solid substrates has conflictually been explained in terms either of preroughening (PR) or of top layer melting-solidification phenomena. We obtain adsorption isotherms of Lennard-Jones particles on an attractive substrate by off lattice grand canonical Monte Carlo simulation, and reproduce reentrant layering. Microscopic analysis confirms a transformation of the top surface layer from solid to quasiliquid across the transition. At the same time, however, the surface coverage is found to switch from close to one to close to half, the latter indicating a disordered flat surface and establishing PR as the underlying mechanism. We conclude that top layer melting can trigger PR. In turn, PR appears to act as the threshold transition for surface melting in rare gas solids.     

Optically biased photoreflectance spectroscopy of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well

We propose optically biased photoreflectance (OBPR) spectroscopy, which is performed by continuous illumination of a secondary monochromatic light on a sample with conventional photoreflectance (PR), as a useful tool to investigate the internal electric fields dependence of the PR signals associated with band to band and quantum level transitions. Line shape of the PR signal has a strong dependence on the internal electric field. In OBPR, if a secondary incident light is absorbed, the internal electric field is suppressed by the photo-generated electron–hole pairs. On the other hand, if the secondary light is not absorbed, the internal electric field is not affected. Through the OBPR investigation of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well, we are able to obtain an absorption like spectrum by performing a wavelength scan of a secondary monochromatic light. The results of OBPR measurements at each PR peak position show the contribution of the electric fields modification by the photo-generated carriers in each layers to the PR signals that are related to band gap and quantum level transitions.     

Popescu-Rohrlich correlations as a unit of nonlocality

A set of nonlocal correlations that have come to be known as a Popescu-Rohrlich (PR) box suggest themselves as a natural unit of nonlocality, much as a singlet is a natural unit of entanglement. We present two results relevant to this idea. One is that a wide class of multipartite correlations can be simulated using local operations on PR boxes only. We show this with an explicit scheme, which has the interesting feature that the number of PR boxes required is related to the computational resources necessary to represent a function defining the multipartite box. The second result is that there are quantum multipartite correlations, arising from measurements on a cluster state, that cannot be simulated with n PR boxes, for any n.     

Optical Learning Neural Network Using Photorefractive Waveguides

A model of an optical neural network with learning ability is proposed. We numerically evaluate the learning ability of the proposed network by using parameters determined by experiments. Adaptive connections between artificial neurons are implemented using photorefractive (PR) waveguides that can be optically modified by guided beams. The network consists of three layers and has bipolar weights within the limited range. The bipolar weight is encoded as the difference between optical power transmittances of signal beams in two channels of the PR waveguides. The adaptivity of the transmittance of PR waveguide is experimentally evaluated and is incorporated into the proposed network simulated in a computer. The proposed network is trained by a simplified local learning algorithm. Numerical results showed that the proposed three-layered network with six hidden neurons can solve the exclusive-or problem.     

All-optical wavelength tuning in Ti:PPLN Šolc filter via the photorefractive effect

We demonstrate fine-wavelength tuning of a periodically poled Ti:LiNbO₃ (Ti:PPLN) Šolc filter by use of the photorefractive (PR) effect. The center wavelength of a Ti:PPLN Šolc filter is controlled by the PR effect, which is induced by second-harmonic generation (SHG). The refractive index change caused by the PR effect is calculated from the measured shift in center wavelength from the Ti:PPLN Šolc filter. The experimental results show that all-optical fine-wavelength tuning in a Ti:PPLN Šolc filter is possible by the use of a second-order nonlinear effect and that a Ti:PPLN waveguide has much higher resistance to PR damage than a Ti:LiNbO₃ waveguide. The measured wavelength tuning rate as a function of the pump beam power is about − 0.033 nm/mW.     

Optical transitions in AlGaAs/GaAs quantum wires on GaAs(6 3 1) substrates studied by photoreflectance spectroscopy

We present the synthesis and characterization of a system of self-assembling GaAs quantum wires (QWRs) embedded in Al_x Ga_1−x As barriers grown by molecular beam epitaxy on GaAs(6 3 1)-oriented substrates. We studied the optical transitions in the QWRs as a function of temperature (T) by photoreflectance (PR) spectroscopy. The energy transitions were extracted from the PR spectra employing the third-derivative functional form, and they were compared with the transitions theoretically calculated from both, a model of QWRs with cylindrical geometry and a model of a conventional square quantum well. The results show a good agreement between experimental and theoretical data in the case of the QWR model, and from this comparison we were able to identify up to 12 different transitions in the PR spectra and to study their behavior dependent on temperature.     

Discrepancy between photoluminescence and photoresponse intensities in n-InAs/GaAs and InAs/n-GaAs quantum-dot heterostructures

We report a discrepancy between near-infrared photoluminescence (PL) and far-infrared photoresponse (PR) efficiencies in self-assembled InAs/GaAs quantum-dot (QD) heterostructures with silicon doping in either InAs QDs or GaAs barriers. The structure with n-GaAs barriers reveals a much higher PR intensity in spite of a weaker PL intensity in comparison with n-InAs QD structure. This discrepancy is explained by differences in the electron occupation of QD sublevel associated with the Fermi-level position and in the mean free path of photogenerated carriers in GaAs barriers due to impurity scattering.     

Dynamics of polyrotaxane investigated by neutron spin echo

The dynamics of a molecular necklace known as polyrotaxane (PR), in which α-cyclodextrins (CDs) are threaded into a poly (ethylene glycol) (PEG) chain, was investigated by means of neutron spin echo (NSE) measurements. We observed that threading CDs into PEG slowed down the local dynamics and changed its Q-dependence. A solution of PEG in DMSO-d₆ showed a dynamical crossover from collective diffusion dynamics to the Zimm mode, just as in conventional polymer solutions; however, the motion of PR in DMSO-d₆ was diffusive for the whole Q range. This may be because the persistence length l_p of PR was much larger than that of PEG and was similar to the mesh size of PR. The diffusive mode in a high Q regime, corresponding to a length scale of less than the l_p value of PR, contained the mode of the sliding of CDs along a rod-like PEG segment in one dimension.     

All-Optical Multifunctional Logic Gates for Image Information Using Photorefractive Two-Wave Mixing

In this paper, we propose all-optical multifunctional logic gates for image information using photorefractive (PR) two-wave mixing. The optical setup is simply configured compared with the other all-optical logic gates for image information. The XOR-, OR-, and AND-operation are all-optically performed in the same optical setup through the transitional response of the PR medium. One can switch these logic operations simply by means of the on-off control of the signal and the pump beam illumination. We analyze the spatial distribution of beam intensity in these logic gates using a finite-difference beam propagation method (FD-BPM) and the crosstalk between adjoining pixels is examined from the result. We also experimentally verify that the XOR-, OR-, and AND-gates are realized in the same optical setup.     

Synthesis and Characterization of a Fluorinated Phenolic Resin/phenolic Resin Blend

Fluorine atoms were introduced into the molecular chain of a phenolic resin (PR) by a two-step acid synthesis process to improve its thermal and hydrophobic properties. The successful synthesis of a fluorinated phenolic resin/phenolic resin blend (F-PR/PR) was proven by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance 19F (¹⁹F-NMR). The thermal properties of F-PR/PR were analyzed by differential scanning calorimetry (DSC) and thermo gravimetric analysis (TGA) and the results indicate that the F-PR/PR had good thermal stability. The hydrophobic properties of PR were effectively modified as demonstrated by the water drop contact angles. The flexural and tribological properties of F-PR/PR were also investigated. The fluorine atom, by virtue of its electronegativity, size and bond strength with carbon, can be used to create composites from F-PR/PR with remarkable properties. For comparison, two other resin blends were also synthesized.     

GaAs/Al1-xAs表面单量子阱原位光调制反射光谱研究

关键词：     

Photoreflectance spectroscopy of quantum dots

We present a short review of applications of a contactless modulation spectroscopy called photoreflectance (PR) to semiconductor quantum dots investigations. The derivative-like spectra and high sensitivity to optical transitions are the reasons why this method, since half of eighties, has become one of the most useful and widely used experimental technique in the investigation of low-dimensional structures like quantum wells, superlattices and heterojunctions. When quantum dot structures had been manufactured for the first time there appeared some attempts of an application of PR and other modulation techniques in studies of fundamental physical properties of those nanometer scale objects. It turned out that PR can be alternative and even better (giving more details) in comparison to common optical experiments.     

Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (0 0 1) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 Å, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [1 1 0] and directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.     

Comparison of thermally detected optical absorption and electromodulation spectra of GaAs/AlGaAs quantum wells

We report for the first time a comparative study of GaAs/AlGaAs quantum well (QW) spectra obtained by thermally detected optical absorption (TD-OA) and photo- (PR) and electroreflectance (ER) experiments, respectively. The excitonic transition energies, obtained at low temperature with these methods, agree within 1 meV. It is demonstrated, using samples with different AlGaAs overlayer thicknesses, that the shape of the TD-OA response is strongly influenced by interference effects for QW's grown on absorbing substrates. A complete PR lineshape analysis yields phase angles for all transitions, whose differences can be attributed to the change of the AlGaAs front barrier thicknesses. ER investigations following successive top layer removal confirm this interpretation.     

Photoreflectance and contactless electroreflectance spectroscopy of GaAs-based structures: The below band gap oscillation features

GaAs-based structures characterized below band gap oscillation features (OFs) in photoreflectance (PR) are studied in both PR and contactless electro-reflectance (CER) spectroscopies. It has been shown that the OFs are usually very strong for structures grown on n-type GaAs substrate. The origin of the OFs is the modulation of the refractive index in the sample due to a generation of additional carriers by the modulated pump beam. The presence of OFs in PR spectra complicates the analysis of PR signal related to quantum well transitions. Therefore, PR spectroscopy is often limited to samples grown on semi-insolating (SI) type substrates. However, sometimes the OFs could be observed for structures grown on SI-type GaAs substrates. In this paper we show that the OFs could be successfully eliminated by applying the CER technique instead of PR one because during CER measurements any additional carriers are not generated and hence CER spectra are free of OFs. This advantage of CER spectroscopy is very important in investigations of all structures for which OFs are present in PR spectra.     

Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm

Photoreflectance (PR) spectroscopy is a powerful and non-destructive experimental technique to explore interband transitions of semiconductors. In most PR systems, the photon energy of the pumping beam is usually chosen to be higher than the bandgap energy of the sample. To the best of our knowledge, the highest energy of pumping laser in reported PR systems is 5.08 eV (244 nm), not yet in the vacuum ultraviolet (VUV) region. In this work, we report the design and construction of a PR system pumped by VUV laser of 7.0 eV (177.3 nm). At the same time, dual-modulated technique is applied and a dual channel lock-in-amplifier is integrated into the system for efficient PR measurement. The system's performance is verified by the PR spectroscopy measurement of well-studied semiconductors, which testifies its ability to probe critical-point energies of the electronic band in semiconductors from ultraviolet to near-infrared spectral region.     

Design of passive polarization rotator based on silica photonic crystal fiber

We propose and analyze a novel (to the best of our knowledge) design of a polarization rotator (PR) based on silica photonic crystal fiber. The proposed design has a rectangular core region with a slanted sidewall. The simulation results are obtained using the full vectorial finite difference method as well as the full vectorial finite difference beam propagation method. The numerical results reveal that the suggested PR can provide a nearly 100% polarization conversion ratio with a device length of 3102 μm.     

Interaction of two-dimensional spatial incoherent solitons in photorefractive medium

We present a review of our recent theoretical and experimental results on the interaction of incoherent two-dimensional solitary beams in PR SBN crystals. We show that the inherent anisotropy of PR nonlinearity strongly affects the interaction between solitons. Theoretical and experimental results reveal that solitons interacting in a plane perpendicular to the direction of external biasing field always attract, whereas those colliding in a plane of the field exhibit anomalous behaviour. They may experience both attractive and repulsive forces, depending on their mutual separation. We also show that this anisotropy results in the complicated topology of soliton trajectories, featuring periodic collisions, prolonged mutual spiraling and collapse, depending on the initial conditions. Received: 16 November 1998 / Revised version: 12 February 1999 / Published online: 12 April 1999     

Effect of co-sensitization in new hybrid photo-refractive materials based on PVK polymer matrix and inorganic LiNbO<Subscript>3</Subscript> nano-crystals

A new class of photo-refractive (PR) composite materials based on poly(N-vinylcarbazole) (PVK) (co-)sensitized with nano-crystalline lithium niobate (LiNbO₃) is presented. The steady-state performance, as well as the kinetics of the photo-refractive grating formation, was investigated by degenerate four-wave mixing (DFWM) and two-beam-coupling (TBC) experiments. We found an optimum content of LiNbO₃ nano-particles of only 10⁻³ wt.%. Even at concentrations as low as 10⁻⁷ wt.% a notable effect of the nano-crystals was detected. This yields materials with improved PR performance compared to that of the standard PR polymer material sensitized by TNF only. The role of LiNbO₃ nano-particles is discussed in detail: The particles support generation and transport of the free-charge carriers. Furthermore, they increase the electron trap density.