多孔硅制备的二维光子晶体生长过程监控

采用单槽电化学腐蚀法在预置有倒金字塔结构的n型单晶硅上制备用于二维光子晶体的多孔硅。利用基于LabVIEW的虚拟仪器技术对实验仪器编程,搭建实时测控系统,实现对反应过程中所需电源的控制,并且实时显示采集到的随时间变化的电压和电流信号,将采集的数据存储在计算机里。实验表明,恒电流供电模式下致使电压剧烈变动,导致多孔硅侧向...     

Optics of Photonic Crystals

In this article, a general theoretical framework to describe and analyze the optical properties of photonic crystals is presented. In addition to the analytical treatment of their optical response based on the method of Green’s function, numerical tools to calculate the dispersion relations and the eigenfunctions of the radiation field, transmission spectra, localized midgap modes, and lasing threshold are introduced and applied to some typical examples. Group theory to analyze the symmetry of the eigenmodes is also introduced, and the existence of uncoupled modes that cannot be excited by external plane waves is shown. The presence of the enhancement effect of nonlinear optical processes and stimulated emission due to the small group velocity which is easily realized in the photonic crystals is pointed out, and the possibility of low-threshold lasing in the photonic crystals is discussed.     

Highly-Ordered Ferroelectric Photonic Crystals

Highly-ordered, ferroelectric, Pb-doped Ba0.7Sr0.3TiO3, inverse opal thin films were fabricated using a sol-gel spin coating technique. The excellent crystal quality is evident from the SEM images and the good agreement between the theory and experiments.     

Weak Coupling between Light and Matter in Photonic Crystals Based on Porous Silicon Responsible for the Enhancement of Fluorescence of Quantum Dots under Two-Photon Excitation

JETP Letters - The development of optical and, in particular, photoluminescent sensors is currently becoming more and more significant because of their universality, selectivity, and high...     

激发光强度对多孔硅拉曼光谱的影响①

报道了经较强激发光辐照后的多孔硅呈现出的独特拉曼光谱性质,其一阶拉曼峰随着激发光功率的不同而变化。当激发光功率增大时,其峰位逐渐红移,同时峰的宽度变大,这种变化是可逆的。我们讨论了产生该现象可能机制。     

含Kerr非线性的一维光子晶体中的类孤子

研究了含Kerr非线性的一维光子晶体中的类孤子。计算了光子晶体中加入Kerr非线性材料后,类孤子和入射光强、Kerr系数以及线性势阱的关系。随着线性势阱的降低,对应于在线性带隙中开始出现类孤子本征模所需要的最小入射强度也降低,即降低了非线性阈值;尽管非线性是产生类孤子的根本原因,但非线性系数对产生类孤子及孤子环中环的影响不如线性势阱高度的影响显著。     

An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector

With the aid of photolithography, an array of one-dimensional porous silicon photonic crystai reflector islands for a far infrared image detector ranging from 10 μm to 14 μm is successfully fabricated. Silicon nitride formed by low pressure chemical vapor deposition （LPCVD） was used as the masking layer for the island array formation. After etching, the microstructures were examined by a scanning electron microscope and the optical properties were studied by Fourier transform infrared spectroscopy, the result indicates that the multilayer structure could be obtained in the perpendicular direction via periodically alternative etching current in each pre-pattern. At the same time, the island array has a well-proportioned lateral etching effect, which is very useful for the thermal isolation in lateral orientation of the application in devices. It is concluded that regardless of the absorption of the deposition layer on the substrate, the localized photonic crystalline islands have higher reflectivity. The designed islands structure not only prevents the cracking of the porous silicon layers but is also useful for the application in the cold part for the sensor devices and the iliterconnection of each pixel.     

液晶光子晶体的负折射特性研究

可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点.本文提出了通过光诱导液晶来调节光子晶体负折射效应的方法,采用平面波展开法、等频图分析法和推广的斯涅尔定理分析了二维液晶正方晶格光子晶体负折射的可调节性.提出了一种新型的液晶光子晶体结构, 数值模拟结果表明:通过偏振光改变液晶指向矢可以调节该液晶光子晶体的负折射.与电场调制方法相比,该光控液晶取向技术具有响应速度快、结构简单的优点.这种可调光子晶体可用于制作光控路由或者应用于全光网络.     

缺陷态光子晶体带隙特性的计算机仿真

基于平面波展开法,设计缺陷态二维正方晶格光子晶体结构,改变构成缺陷态结构的材料、占空比,应用Matlab语言计算机仿真得到,高介电常数材料构成的缺陷态光子晶体形成较宽的横磁波光子带隙,占空比在30％时形成较宽的横磁波光子带隙.研究结论为缺陷态光子晶体滤波器件的制作提供理论依据.     

一维无序结构光子晶体的能带特性研究

通过引入结构参数a，深入研究了具有无序结构的一维二元光子晶体的能带特性。研究发现，无序结构有效拓宽了光子带隙，与均匀结构相比，拓宽率达到200％以上；无序一维光子晶体表现出从可见到红外很宽区域的高反射特性。本文还计算和分析了入射角和无序度D对光子晶体带隙的影响。     

一维光子晶体的折射率研究

对于一维光子晶体反常折射的研究大都基于光子晶体的色散关系解析解,文章作者认为,在光线非正入射时上述方法是不适用的,有必要使用更加合适的方法对一维光子晶体的折射规律加以系统研究,从而对一维光子晶体器件的设计起到些指导作用.文章将一维光子晶体作为二维问题来考察,使用数值方法(平面波展开法)来计算光线在光子晶体中沿各个方向传播时的色散关系,进而得到了折射角与入射角和频率的关系.结果表明:对于一维光子晶体,考查在第一能带范围内的频率,当频率越接近能带边,且入射角越接近敏感区时,折射角对入射角和频率的变化越敏感.而且,敏感区随频率的增大有向小角度移动的趋势.     

Spectroscopy of Liquid Crystals

The term “liquid crystal” signifies a state of aggregation that is intermediate between the crystalline solid and the isotropic liquid. A substance in this state is strongly anisotropic in some of its properties and yet exhibits a certain degree of fluidity, which in some cases may be comparable to that of an ordinary liquid. A large number of organic compounds are now known to form liquid crystals. An essential requirement for mesomorphism to occur is that the molecules must be highly geometrically anisotropic. The transition to the intermediate state may be brought about by purely thermal processes (thermotropic mesomorphism) o r by the action of solvents (lyotropic mesomorphism).     

Photonic Band Gap Properties of Three-Dimensional SiO2 Photonic Crystals

Three-dimensional SiO2 photonic crystals （PhCs） are fabricated on quartz substrates by the vertical deposition method. Scanning electron microscopy measurement reveals that the samples exhibit an ordered close-packed arrangement of SiO2 spheres. It is found that the position of the [111] photonie band gap （PBG） shifts to a long wavelength （red shift） with increasing sphere size. Gap broadening effects are observed due to the presence of defects in the samples. Moreover, the optical properties of the PBG are very sensitive to the annealing temperature. Our results indicate that the optical properties of the PBG can be easily tuned in the visible region by appropriate experimental parameters, which will be useful for practical applications of PhC optical devices.     

半无限一维光子晶体的反射率

本文给出了入射到半无限光子晶体上的波的反射系数计算公式.对由普通材料、双负材料和单负材料组成的一维半无限光子晶体中光的反射进行了数值模拟计算.发现半无限光子晶体的反射率曲线与有限光子晶体相比变得平滑,是有限光子晶体迅速振荡的反射率平均的结果.TE波的反射取决于介电常数的差异,而TM波的反射取决于磁导率的差异.单负-单负材料中的场是倏逝场,存在一个通带使场无位相延迟的传播.当满足eB=-εA,μB=-μA和dA=dB条件时反射率变为零.     

光子晶体共振现象研究

完整二维光子晶体中引入点缺陷后，在光子晶体禁带中会有共振模出现；将时域有限差分方法(FDTD)用于光子晶体共振特性研究中，给出共振频率的位置，直观地给出共振现象发生的过程。     

填充率渐变型波状结构二维光子晶体

填充率渐变引起的能带结构和等频面结构的变化是填充率渐变型波状结构二维(2D)光子晶体(PC)产生光路转弯现象的根本原因,由于TM模和TE模在能带结构上存在差异,光路转弯现象就具有明显的偏振选择特性,能够实现归一化频率a/λ为0.29~0.33的偏振分束。利用时域有限差分(FDTD)法模拟了TM模的U型转弯波导,发现出射光位置对入射波长和入射角的变化很敏感,位移变化量分别达到0.38μm/10 nm和0.29μm/(°)。利用TM模的U型转弯波导构建了新型的平行平面谐振腔,并指出由填充率渐变型波状结构二维光子晶体和一维多层薄膜构成的混合结构在光分束和抑制光束发散方面的作用及其在平行平面谐振腔中的潜在应用。     

Raman Scattering in Three-Dimensional Photonic Crystals

The optical properties of three-dimensional photonic crystals associated with the form of reflection spectra from their surface (appearance of a forbidden gap in the energy spectrum) and with the specific features of Raman scattering are analyzed. Idealized models of the energy band structure of photonic crystals are studied. Expressions for the group velocity of photons with energy close to the forbidden gap are derived. Experimental results on the Raman scattering in photonic crystals based on artificial opal as well as in fused silica are discussed. Bands due to quantum-size effects (presence of nanoclusters in fused silica and nanoglobules forming the lattice of globular photonic crystals) were manifested in the spectra of inelastic light scattering. It is proposed to use photonic crystals for the creation of sensitive sensors of organic and inorganic substances using modern Raman techniques.     

Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates

We have investigated an oxidation of substrate effect on structural morphology of zinc oxide (ZnO) rods. ZnO rods are grown on porous silicon (PS) and on thermally oxidized porous silicon substrates by carbothermal reduction of ZnO powder through chemical vapour transport and condensation. Porous silicon is fabricated by electrochemical etching of silicon in hydrofluoric acid solution. The effects of substrates on morphology and structure of ZnO nanostructures have been studied. The morphology of substrates is studied by atomic force microscopy in contact mode. The texture coefficient of each sample is calculated from X-ray diffraction data that demonstrate random orientation of ZnO rods on oxidized porous silicon substrate. The morphology of structures is investigated by scanning electron microscopy that confirms the surface roughness tends to increase the growth rate of ZnO rods on oxidized PS compared with porous silicon substrate. A green emission has been observed in ZnO structures grown on oxidized PS substrates by photoluminescence measurements.