Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Magnetic-field-induced change in optical transmission spectra of Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te epitaxial films

The optical transmission spectra of epitaxial Hg_{1 − x} Cd _x Te films with a gradient of the band gap have been studied experimentally. The possibility of transforming the spectra after exposure of the samples to a homogeneous magnetic field has been demonstrated. This effect is possibly caused by the dependence of the magnetization of the Hg_{1 − x} Cd _x Te films on the composition gradient of the solid solution.     

Modeling of the Interaction of High-Power Pulsed Ion Beams with Cadmium-Mercury-Tellurium Semiconductor Targets

A mathematical model for describing the interaction between high-power pulsed ion beams and semiconductor Cd_xHg_1–x Te (cadmium–mercury–tellurium or CMT) targets is developed, the results of numerical simulation are reported, and the comparison with experiment is performed.     

Effect of temperature on the band structure of MnxHg1−xSe

The band structure of the solid solutions Mn_xHg_1–xSe is constructed on the basis of the band parameters obtained from the electrophysical and optical investigations of these solid solutions. It is shown that the band structure of Mn_xHg_1–xSe and the dynamics of the bands as a function of the composition and temperature are analogous to those for Cd_xHg_1–xTe. It is shown that the variation of the nonparabolicity of the band spectrum of Mn_xHg_1–xSe as a function of the temperature greatly affects the temperature coefficient of the change of the width of the optical forbidden band (d_gop/dT).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 40–44, April, 1991.     

Investigation of photoelectric and recombination characteristics of a CdHgTe optical mixer

An analysis is made of the heterodyne operation of a Cd_xHg_1–xTe (x=0.2) photoresistor detector. An allowance is made for the influence of the heterodyne power on the carrier lifetime in the case of the interband Auger recombination and recombination via Shockley-Read centers. It is found that the Auger recombination predominates at high heterodyne powers. It is shown that the pass band of the photodetector can be widened by increasing the heterodyne power. It is reported that the results of an experimental study of a Cd_xHg_1–x Te photoresistor detector are in good agreement with the calculations when the threshold sensitivity of the detector is limited by the thermal noise of the photoresistor.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 100–103, July, 1980.     

Hg1-xCdxTe禁带以上的本征光吸收

讨论了HgCdTe三元半导体在能量大于禁带宽度范围内的本征吸收光谱。经过分析比较实验数据,Kane理论结果以及几种经验公式,指出Anderson从Kane模型获得的理论公式及褚君浩等从实验结果得出的经验公式,最符合HgCdTe禁带以上本征光吸收行为。文中还就外延薄膜样品的本征吸收进行了讨论。 关键词：     

Modeling of the energy spectrum of the CdTe/Hg1-xCdxTe/CdTe quantum well by varying the band offset, well width, and composition x

Currently, CdTe/Cd _x Hg_1-x Te/CdTe heterostructures attract particular interest and are very promising for developing the next-generation terahertz radiation detectors. However, properties of such structures have not yet been studied in sufficient detail. The energy spectrum and wave functions of the CdTe/Cd _x Hg_1-x Te/CdTe heterostructure were theoretically modeled for various well widths, the valence band offset, and composition x in the range 0<x<0.16. Characteristic features of the behavior of energy levels of two-dimensional electrons in such structures were studied with respect to x variation. A criterion for determining the number of electronic levels below the conduction band bottom, applicable to compositions 0<x<0.16 was obtained. The time of two-dimensional electron relaxation by longitudinal optical phonons was calculated.     

Scanning tunneling optical spectroscopy in mercury cadmium telluride and related compounds

We consider II–VI narrow gap semiconducting alloys: mercury cadmium telluride, Hg_(1−x)Cd_(x)Te (MCT), mercury zinc telluride, Hg_(1−x)Zn_(x)Te (MZT), and mercury zinc selenide, Hg_(1−x)Zn_(x)Se (MZS). MCT is emphasized for actual calculations, but a table of values needed in all calculations is presented. These materials are of interest because of their application to infrared detectors and related devices, and because they are candidates for low gravity crystal growth to improve uniformity. We present new calculations of the scanning tunneling optical spectroscopy (STOS) current from which the local energy gap, a function of x, and hence the stoichiometry (x) can be determined as a function of position with presumably high spatial resolution. The low temperature tunneling current (vs. photon frequency) has a sharper onset at the band gap than the low temperature optical absorption. This sharp onset originates from the rapid increase in the integrated transmission probabilities and is greatly enhanced by large diffusion lengths. Thus, STOS should be a competitive technique, compared to optical absorption, for determining the local stoichiometry, a property that is important for characterizing crystals.     

The p-n junction formation in Hg1−xCdxTe by laser annealing method

The formation of p-n junctions in Hg_1−xCd_xTe is still an open research task. In this paper, laser treatment of n-type Hg_1−xCd_xTe samples resulting in the formation of a p-n junction is studied. The YAG:Nd³⁺ laser with pulse duration of 250 μs or 40 ns was used. The energy density of laser beam was below the threshold of sample surface melting. The interpretation of the results is based on a model of defects formation related to interstitial mercury diffusion following laser irradiation. The Hall measurements clearly point out to a simple p-n junction. The resistance of samples shows the long time relaxation described by the 1/2 power law, which is attributable to the defect diffusion processes, but not to the changes in the electron-hole systems.     

Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te

We have proposed and developed terahertz and subterahertz wave detector using hot-carrier effect in narrow-gap Hg_1−xCd_xTe. Epitaxial Hg_1−xCd_xTe-layers were integrated into dipole antennas. The response of Hg_1−xCd_xTe hot-electron bolometer was measured in the range of frequencies 0.037–1.58 THz, in the temperature region T = 68–300 K at various bias currents. A bolometer theoretical model was developed and the experimental results confirm the model main conclusions.     

Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors

An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is also studied under the weak-field limit taking n-channel Hg_1–xCd_x.Te as an example.On leave of absence fromthe Department of Physics, Patna University, Patna, India.     

Diluted magnetic semiconductor superlattices and heterostructures

Diluted magnetic semiconductors (DMS) are mixed semiconducting crystals whose lattice is made up in part of substitutional magnetic ions. Cd_1−xMn_xTe and Hg_1−xMn_xTe are examples of such materials. Their structural and band parameters can be “tuned” by composition over a wide range. They can thus be exploited in situations completely similar to those involving Ga_1−xAl_xAs. Using molecular beam epitaxy, we have grown Cd_1−xMn_xTe superlattices with alternating Mn content, having up to 150 layers, with layer thickness ranging from 50 to 100 Å. The superlattice structure is clearly revealed by transmission electron microscopy and by zone-folding of the phonon spectrum observed in Raman scattering. Photoluminescence observed on Cd_1−xMn_xTe superlattices is several orders of magnitude greater than that from a Cd_1−xMn_xTe film with uniform Mn content, or from bulk Cd_1−xMn_xTe specimens. The presence of localized magnetic moments in DMS results in a strong exchange interaction between these moments and band electrons. This in turn leads to gigantic Zeeman splittings of impurity states, exciton levels, Landau levels, and the bands themselves. Zeeman splittings as large as 20 meV (which in non-magnetic semiconductors would require unrealistic megagauss fields) are easily achieved in DMS in fields of several kilogauss. Since the magnitude of this exchange-induced splitting in DMS can be comparable to the binding energies and to the minigaps encountered in multiple quantum wells, DMS superlattices hold promise of a host of novel effects of both fundamental and applied interest.     

First-principles study of fundamental properties and electronic structure of alloys

We have performed first-principles calculations using full-potential augmented-plane-wave method to investigate the fundamental properties of the Cd_1–xZn_xTe alloys. The composition dependence of the lattice constant and the bulk modulus have been estimated from total energy calculations. By means of the analytical fitting the band structures in the vicinity of the Brillouin center a complete set of effective electron- and hole-masses have also been derived. In order to further understand the effects of the chemical bonding on the above macroscopic properties we then studied the relaxation behaviors and the changes of the electronic states upon alloying for x=0.25 system. The results presented here yield a general understanding of the fundamental properties for the Cd_1–xZn_xTe crystals studies.     

A direct measurement of g-factors in II–VI and III–V core–shell nanocrystals

This study describes a direct measurement of spectroscopic g-factors of photo-generated carriers in InP/ZnS and HgTe/Hg_xCd_1−xTe(S) core–shell nanocrystals. The g-factor of trapped electrons and their spin-lattice versus radiative relaxation ratio (T₁/τ) were measured by the use of continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The g-factors of excitons and donor–hole pairs were derived by the use of field-induced circular-polarized photoluminescence (CP-PL) spectroscopy. The combined information enabled to determine the g-factors of the individual band-edge electrons and holes. The results suggested an increase of the g-factor of the exciton and conduction electron with a decrease of the nanocrystal size.     

Atomic and electronic structure formation at the metal-Cd1−xMnxTe interface

Atomic and electronic structure modification of a metal-Cd_1−xMn_xTe interface is achieved using selective etching of the Cd_1−xMn_xTe surface (x=0, 0.34) and Cd adsorption. It is revealed that Te, TeO₂, Mn₃O₄, and CdTeO₃ are formed at the Cd_1−xMn_xTe surface etched in Br₂ solution. Te and Cd_1−xMn_xTe produce TeCd_1−xMn_xTe heterojunctions, the salient features of which are nearly symmetric nonlinear I-V characteristics. At the Cd_1−xMn_xTe surface with adsorbed Cd, CdTe might form, resulting in a CdTe-Cd_1−xMn_xTe heterojunction. The metal-CdTe-Cd_1−xMn_xTe microstructure is characterized by a nonlinear dependence of current on voltage and rectifying behaviour. The results obtained give deep insight into electronic processes in metal-Cd_1−xMn_xTe microstructures.     

Optical and vibrational properties of CdxHg1-x-y ZnyTe solid solutions

The lattice dynamics of Cd_xHg_1-x-y Zn_yTe solid solutions is studied theoretically and experimentally. The frequencies of the basic optical phonons of Cd_xHg_1-x-y Zn_yTe are calculated in terms of a modified random-element isodisplacement model. As a result, all basic vibrations of the crystal lattice that substantially affect the optical properties of this material in the spectral region corresponding to one-phonon resonance are identified. The optical properties of epitaxial Cd_xHg_1-x-y Zn_yTe layers grown by liquid-phase epitaxy on Cd_1-x Zn_xTe substrates are studied. The calculated and experimental spectral dependences of the dielectric function of Cd_xHg_1-x-y Zn_yTe solid solutions of various compositions are compared at 295 and 78 K, and good agreement between them is reached. The additional lattice vibrations whose frequencies in the phonon density of states are lower than that of the HgTe mode are shown to be caused by the lattice defects of the Cd_xHg_1-x-y Zn_yTe solid solutions.     

Hot-carrier magnetophonon resonance in CdxHg1−xTe

Resistance oscillations and voltage-current characteristics have been examined for Cd_xHg_1–xTe crystals on both sides of the transition from the gap-free phase to the narrow-gap phase in strong electric fields (1相似文献   

Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

Transitions between direct and indirect excitons with change of magnetic field in double quantum well heterostructure Cd_1−xMg_xTe/Cd_1−yMg_yTe/Cd_1−xMg_xTe/Cd_1−zMn_zTe/Cd_1−xMg_xTe in external magnetic field are studied. The structure contains diluted magnetic semiconductor (Cd,Mn)Te layer that forms magnetic quantum well with the depth depending on the magnetic field intensity. Above some magnetic field the indirect exciton becomes the lowest excited state of the system. The indirect exciton lifetime exceeds by several orders of magnitude of the direct exciton one. The range of quantum well widths for which the indirect exciton is the exciton lowest state was estimated for the proposed system.     

Mechanism for Conversion of the Conductivity Type in Arsenic-Doped p-CdxHg1–xTe Subject to Ionic Etching

Based on an analysis of chemical diffusion of mercury in p-Cd _x Hg_1–x Te:As narrow-band solid solutions, a mechanism for conversion of the conductivity type upon ionic etching is suggested. It is shown that the n–p conversion of the conductivity in this case is due to the formation of a donor complex between arsenic in the Te sublattice and an interstitial Hg atom. Moreover, the electron concentration in the converted layer corresponds to the concentration of the implanted arsenic impurity. The theoretical results are confirmed by the experimental investigation of the electron concentration distribution over the n-layer of a p-Cd _x Hg_1–x Te:As epistructure converted upon ionic etching.     

Quantum properties of two-dimensional electron gas in the inversion layer of Hg1−xCdxTe bicyrstals

The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg_1−xCd_xTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. Hydrostatic pressure up to 10³ MPa is used to characterize the properties of the two-dimensional electron gas in the inversion layer. At atmospheric pressure three series of quantum oscillations are revealled, indicating that tthree electric subbands are occupied. From quantum oscilations of the magnetoresistivity the characteristics parameters of the electric subbands (subband populations n_si, subband energies E_F−E_i, effective electron masses m^*_ci) and their pressure dependences are established. A strong decrease of the carrier concentration in the inversion layer and of the corresponding subband population is observed when pressure is applied A simple theoretical model based on the triangular-well approximation and taking into account the pressure dependence of the energy band structure of Hg_1−xCd_xTe is use to calculate the energy band diagram of the quantum well and the pressure dependence of the subband parameters.