Dissipation and criticality in the lowest Landau level of graphene

The lowest Landau level of graphene is studied numerically by considering a tight-binding Hamiltonian with disorder. The Hall conductance sigma_{xy} and the longitudinal conductance sigma_{xx} are computed. We demonstrate that bond disorder can produce a plateaulike feature centered at nu=0, while the longitudinal conductance is nonzero in the same region, reflecting a band of extended states between +/-E_{c}, whose magnitude depends on the disorder strength. The critical exponent corresponding to the localization length at the edges of this band is found to be 2.47+/-0.04. When both bond disorder and a finite mass term exist the localization length exponent varies continuously between approximately 1.0 and approximately 7/3.     

Quantized anomalous Hall effect in two-dimensional ferromagnets: quantum Hall effect in metals

We study the effect of disorder on the anomalous Hall effect (AHE) in two-dimensional ferromagnets. The topological nature of the AHE leads to the integer quantum Hall effect from a metal, i.e., the quantization of sigma(xy) induced by the localization except for the few extended states carrying Chern numbers. Extensive numerical study on a model reveals that Pruisken's two-parameter scaling theory holds even when the system has no gap with the overlapping multibands and without the uniform magnetic field. Therefore, the condition for the quantized AHE is given only by the Hall conductivity sigma(xy) without the quantum correction, i.e., /sigma(xy)/>e(2)/(2h).     

Quantum criticality and minimal conductivity in graphene with long-range disorder

We consider the conductivity sigma of graphene with negligible intervalley scattering at half filling. We derive the effective field theory, which, for the case of a potential disorder, is a symplectic-class sigma model including a topological term with theta=pi. As a consequence, the system is at a quantum critical point with a universal value of the conductivity of the order of e(2)/h. When the effective time-reversal symmetry is broken, the symmetry class becomes unitary, and sigma acquires the value characteristic for the quantum Hall transition.     

Crossover behavior of the anomalous Hall effect and anomalous nernst effect in itinerant ferromagnets

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are experimentally investigated in a variety of ferromagnetic metals including pure transition metals, oxides, and chalcogenides, whose resistivities range over 5 orders of magnitude. For these ferromagnets, the transverse conductivity sigma{xy} versus the longitudinal conductivity sigma{xx} shows a crossover behavior with three distinct regimes in accordance qualitatively with a recent unified theory of the intrinsic and extrinsic AHE. We also found that the transverse Peltier coefficient alpha{xy} for the ANE obeys the Mott rule. These results offer a coherent and semiquantitative understanding of the AHE and ANE to an issue of controversy for many decades.     

Unconventional integer quantum Hall effect in graphene

Monolayer graphite films, or graphene, have quasiparticle excitations that can be described by (2+1)-dimensional Dirac theory. We demonstrate that this produces an unconventional form of the quantized Hall conductivity sigma(xy) = -(2e2/h)(2n+1) with n = 0, 1, ..., which notably distinguishes graphene from other materials where the integer quantum Hall effect was observed. This unconventional quantization is caused by the quantum anomaly of the n=0 Landau level and was discovered in recent experiments on ultrathin graphite films.     

Electronic transport and quantum hall effect in bipolar graphene p-n-p junctions

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.     

Charge and spin Hall conductivity in metallic graphene

Graphene has an unusual low-energy band structure with four chiral bands and half-quantized and quantized Hall effects that have recently attracted theoretical and experimental attention. We study the Fermi energy and disorder dependence of its spin Hall conductivity sigma(xy)(SH). In the metallic regime we find that vertex corrections enhance the intrinsic spin Hall conductivity and that skew scattering can lead to sigma(xy)(SH) values that exceed the quantized ones expected when the chemical potential is inside the spin-orbit induced energy gap. We predict that large spin Hall conductivities will be observable in graphene even when the spin-orbit gap does not survive disorder.     

Dissipative quantum hall effect in graphene near the Dirac point

We report on the unusual nature of the nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counterpropagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho(xx) > or approximately h/e(2), in striking contrast to rho(xx) behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho(xy) and rho(xx) and a smeared zero Hall plateau in sigma(xy), in agreement with experiment. The existence of gapless edge states puts stringent constraints on possible theoretical models of the nu=0 state.     

High frequency conductivity in the quantum hall regime

We have measured the complex conductivity sigma(xx) of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that sigma(xx) can be scaled to a single function for different frequencies and several transitions between plateaus in the quantum Hall effect. Additionally, the conductivity in the variable-range hopping regime is used for a direct evaluation of the localization length xi. Even for large filling factor distances deltanu from the critical point we find xi approximately equals deltanu(-gamma) with a scaling exponent gamma = 2.3.     

Two-dimensional transport and strong spin-orbit interaction in SrMnSb_2

We have carried out magneto-transport measurements for single crystal SrMnSb_2. Clear Shubnikov-de Haas oscillations were resolved at relatively low magnetic field around 4 T, revealing a quasi-2D Fermi surface. We observed a development of quantized plateaus in Hall resistance(R_(xy)) at high pulsed fields up to 60 T. Due to the strong 2D confinement and layered properties of the samples, we interpreted the observation as bulk quantum Hall effect that is contributed by the parallel 2D conduction channels. Moreover, the spin degeneracy was lifted leading to Landau level splitting. The presence of anisotropic g factor and the formation of the oscillation beating pattern reveal a strong spin-orbit interaction in the SrMnSb_2 system.     

Integer quantum Hall effect in trilayer graphene

By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.     

Quantum Hall effect in intentionally disordered two‐dimensional electron systems

In this work intentionally disordered two‐dimensional electron systems in modulation doped GaAs/GaAlAs heterostructures are studied by magnetotransport experiments. The disorder is provided by a δ‐doped layer of negatively charged beryllium acceptors. In low magnetic fields a strong negative magnetoresistance is observed that can be ascribed to magnetic‐field‐induced delocalization. At increased magnetic fields the quantum Hall effect exhibits broad Hall plateaus whose centers are shifted to higher magnetic fields, i.e. lower filling factors. This shift can be explained by an asymmetric density of states. Consistently, the transition into the insulating state of quantum Hall droplets in high magnetic fields occurs at critical filling factors around ν_c=0.4, i.e. well below the value 1/2 that is expected for symmetric disorder potentials. The insulator transition is characterized by the divergence of both the longitudinal resistance as well as the Hall resistance. This is contrary to other experiments which observe a finite Hall resistance in the insulating regime and has not been observed previously. According to recent theoretical studies the divergence of the Hall resistance points to quantum coherent transport via tunneling between quantum Hall droplets. The magnetotransport experiments are supplemented by simulations of potential landscapes for random and correlated distributions of repulsive scatterers, which enable the determination of percolation thresholds, densities of states, and oscillator strengths for far‐infrared excitations. These simulations reveal that the strong shift of the Hall plateaus and the observed critical filling factor for the insulator transition in high magnetic fields require an asymmetric density of states that can only be generated by a strongly correlated beryllium distribution. Cyclotron resonance on the same samples also indicates the possibility of correlations between the beryllium acceptors.     

Landau-level splitting in graphene in high magnetic fields

The quantum Hall (QH) effect in two-dimensional electrons and holes in high quality graphene samples is studied in strong magnetic fields up to 45 T. QH plateaus at filling factors nu = 0, +/-1, +/-4 are discovered at magnetic fields B > 20 T, indicating the lifting of the fourfold degeneracy of the previously observed QH states at nu = +/-4(absolute value(n) + 1/2), where n is the Landau-level index. In particular, the presence of the nu = 0, +/-1 QH plateaus indicates that the Landau level at the charge neutral Dirac point splits into four sublevels, lifting sublattice and spin degeneracy. The QH effect at nu = +/-4 is investigated in a tilted magnetic field and can be attributed to lifting of the spin degeneracy of the n = 1 Landau level.     

Quantum Hall effects in layered disordered superconductors

Layered singlet paired superconductors with disorder and broken time reversal symmetry are studied, demonstrating a phase diagram with charge-spin separation in transport. In terms of the average intergrain transmission and the interlayer tunneling we find quantum Hall phases with spin Hall coefficients of sigma(spin)(xy)=0,2 separated by a spin metal phase. We identify a spin metal-insulator localization exponent as well as a spin conductivity exponent of approximately 0.96. In the presence of a Zeeman term an additional sigma(spin)(xy)=1 phase appears.     

Detection of hidden localized states by the quantum Hall effect in graphene

We fabricated a monolayer graphene transistor device in the shape of the Hall-bar structure, which produced an exactly symmetric signal following the sample geometry. During electrical characterization, the device showed the standard integer quantum Hall effect of monolayer graphene except for a broader range of several quantum Hall plateaus corresponding to small filling factors in the electron region. We investigated this anomaly on the basis of localized states owing to the presence of possible electron traps, whose energy levels were estimated to be near the Dirac point. In particular, the inequality between the filling of electrons and holes was ascribed to the requirement of excess electrons to fill the trap levels. The relations between the quantum Hall plateau, Landau level, and filling factor were carefully analyzed to reveal the details of the localized states in this graphene device.     

Some implications of inclusive electro- and neutrino production data

We systematically exploit the reported data on \(F_2^{\gamma p} ,F_2^{\gamma n} ,\sigma ^{vN} ,\sigma ^{\bar vN} ,\left\langle {xy} \right\rangle _{vN} ,\left\langle {xy} \right\rangle _{\bar vN} ,\left\langle {1 - y} \right\rangle _{vN} \) and \(\left\langle {1 - y} \right\rangle _{\bar vN} \) in order to test various versions of the quark parton model and to obtain further predictions.     

Bonding, backbonding, and spin-polarized molecular orbitals: basis for magnetism and semiconducting transport in V[TCNE]x approximately 2

X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the V L{2,3} and C and N K edges reveal bonding and backbonding interactions in films of the 400 K magnetic semiconductor V[TCNE]x approximately 2. In V spectra, d{xy}-like orbitals are modeled assuming V2+ in an octahedral ligand field, while d{z{2}} and d{x{2}-y{2}} orbitals involved in strong covalent sigma bonding cannot be modeled by atomic calculations. C and N MCD, and differences in XAS from neutral TCNE molecules, reveal spin-polarized molecular orbitals in V[TCNE]x approximately 2 associated with weaker pi bonding interactions that yield its novel properties.     

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

In this paper we show the electronic transport and the quantum phase transitions that characterize the quantum Hall regime in graphene placed on SiO(2) substrates at magnetic fields up to 28 T and temperatures down to 4 K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals intriguing non-universalities of the critical exponents of the plateau-insulator transition. These exponents depend on the type of disorder that governs the electrical transport and its characterization is important for the design and fabrication of novel graphene nano-devices.     

Quantization of the diagonal resistance: density gradients and the empirical resistance rule in a 2D system

We have observed quantization of the diagonal resistance, R(xx), at the edges of several quantum Hall states. Each quantized R(xx) value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R(xy). Peaks in R(xx) occur at different positions in positive and negative magnetic fields. Practically all R(xx) features can be explained quantitatively by a 1%/cm electron density gradient. Therefore, R(xx) is determined by R(xy) and unrelated to the diagonal resistivity rho(xx). Our findings throw an unexpected light on the empirical resistivity rule for 2D systems.     

Scattering mechanism of integer quantum Hall conductance in a model system

We consider a large class of two-dimensional systems of charged particles in crossed electric and strong magnetic fields in the presence of a static substrate potentialV(x,y), which contains disorder. The time dependence of the single-particle Schroedinger functions are investigated. It is found on general grounds, that adiabatic states are dc-insulating and, that the macroscopic Hall current is carried by the non-adiabatic states. Hall conductance plateaus correspond to spectral domains, which contain only adiabatic states. The plateaus disappear, when these states become non-adiabatic at sufficiently high electric fields, i.e., at sufficiently large Hall currents. An explicit model system is investigated with a substrate potential composed of disorder and of a sequence of smooth barriers and wells. Here the non-adiabatic states can be calculated in a weak-disorder approximation, whenever the electric field (and hence the Hall current) is sufficiently low. In this case the quantum mechanical scattering process leading, to the quantisation of the Hall conductance can be understood in detail. Non-classical particle propagation plays a crucial role in this process. Our analysis opens new perspectives for the theory of the integer quantum Hall effect.