Strain induced shift of Dirac points and the pseudo-magnetic field in graphene

We prove that the strain induced shift of the Dirac points in graphene is a curl field if the strain is nonuniform. This curl field provides a geometrical explanation of the strain induced pseudo-magnetic field. We also prove that the Dirac points must be confined within two triangles, each one having one-eighth the area of the Brillouin zone.     

Methane molecule over the defected and rippled graphene sheet

Adsorption of a methane molecule (CH₄) onto a defected and rippled graphene sheet is studied using ab initio and molecular mechanics calculations. The optimal adsorption position and orientation of this molecule on the graphene surface (motivated by the recent realization of graphene sensors to detect individual gas molecules) is determined and the adsorption energies are calculated. In light of the density of states, we used the SIESTA code. It is found that (i) classical force field yields adsorption energy comparable with experimental result and ab initio calculation; (ii) the periodic nature of the van der Waals potential energy stored between methane and perfect sheet is altered due to the insertion vacancies and sinusoidal ripples; (iii) the van der Waals potential energy is found to be sensitive to the presence of the vacancies and the ripples so that the added molecule avoids to be around vacant cites and on top of the peaks.     

Magnetic Kronig-Penney-type graphene superlattices: finite energy Dirac points with anisotropic velocity renormalization

We study the energy band structure of magnetic graphene superlattices with delta-function magnetic barriers and zero average magnetic field. The dispersion relation obtained using the T-matrix approach shows the emergence of an infinite number of Dirac-like points at finite energies, while the original Dirac point is still located at the same place as that for pristine graphene. The carrier group velocity at the original Dirac point is isotropically renormalized, but at finite energy Dirac points it is generally anisotropic. An asymmetry in the width between the wells and the barriers of the periodic potential induces a shift of the original Dirac point in the zero-energy plane, keeping the velocity renormalization isotropic.     

Weak localization of Dirac fermions in graphene

In the presence of the charged impurities, we study the weak localization effect by evaluating the quantum interference correction to the conductivity of Dirac fermions in graphene. With the inelastic scattering rate due to electron-electron interactions obtained from our previous work, we investigate the dependence of the quantum interference correction on the carrier concentration, the temperature, the magnetic field, and the size of the sample. It is found that weak localization is present in large size samples at finite carrier doping. Its strength becomes weakened or quenched when the sample size is less than a few microns at low temperatures as studied in the experiments. In the region close to zero doping, the system may become delocalized. The minimum conductivity at low temperature for experimental sample sizes is found to be close to the data.     

Manipulation of Dirac points in graphene-like crystals

We review different scenarios for the motion and merging of Dirac points in 2D crystals. These different types of merging can be classified according to a winding number (a topological Berry phase) attached to each Dirac point. For each scenario, we calculate the Landau level spectrum and show that it can be quantitatively described by a semiclassical quantization rule for the constant energy areas. This quantization depends on how many Dirac points are enclosed by these areas. We also emphasize that different scenarios are characterized by different numbers of topologically protected zero energy Landau levels.     

Periodically rippled graphene: growth and spatially resolved electronic structure

We grow epitaxial graphene monolayers on Ru(0001) that cover uniformly the substrate over lateral distances larger than several microns. The weakly coupled graphene monolayer is periodically rippled and it shows charge inhomogeneities in the charge distribution. Real space measurements by scanning tunneling spectroscopy reveal the existence of electron pockets at the higher parts of the ripples, as predicted by a simple theoretical model. We also visualize the geometric and electronic structure of edges of graphene nanoislands.     

Magnetic confinement of massless Dirac fermions in graphene

Because of Klein tunneling, electrostatic potentials are unable to confine Dirac electrons. We show that it is possible to confine massless Dirac fermions in a monolayer graphene sheet by inhomogeneous magnetic fields. This allows one to design mesoscopic structures in graphene by magnetic barriers, e.g., quantum dots or quantum point contacts.     

Theory of superconductivity for Dirac electrons in graphene

Phonon-exchange-induced superconducting pairing of effectively ultrarelativistic electrons in graphene is investigated. The Eliashberg equation obtained for describing pairing in the Cooper channel with allowance for delayed interaction are matrix equations with indices corresponding to the valence and conduction bands. The equations are solved in the high doping limit, in which pairing is effectively a single-band process, and in the vicinity of a critical quantum point of underdoped graphene for a value of the coupling constant for which pairing is an essentially multiband process. For such cases, analytic estimates are obtained for the superconducting transition temperature of the system. It is shown that the inclusion of dynamic effects makes it possible to determine the superconducting transition temperature, as well as the critical coupling constant for underdoped graphene, more accurately than in the static approximation of the BCS type. Estimates of the constants of electron interaction with the scalar optical phonon mode in graphene indicate that an appreciable superconducting transition temperature can be attained under a high chemical doping level of graphene.     

BCS Superconductivity of Dirac electrons in graphene layers

Possible superconductivity of electrons with the Dirac spectrum is analyzed using the BCS model. We calculate the critical temperature, the superconducting energy gap, and the supercurrent as functions of the doping level and of the pairing interaction strength. Zero doping is characterized by the existence of a quantum critical point such that the critical temperature vanishes below some finite value of the interaction strength. However, the critical temperature remains finite for any nonzero electron or hole doping level when the Fermi energy is shifted away from the Dirac point. As distinct from usual superconductors, the supercurrent density is not proportional to the number of electrons but is strongly decreased due to the presence of the Dirac point.     

Qualitative analysis of trapped Dirac fermions in graphene

We study the confinement of Dirac fermions in graphene and in carbon nanotubes by an external magnetic field, mechanical deformations or inhomogeneities in the substrate. By applying variational principles to the square of the Dirac operator, we obtain sufficient and necessary conditions for confinement of the quasi-particles. The rigorous theoretical results are illustrated on the realistic examples of the three classes of traps.     

Control of the Dirac point in graphene by UV light

It is experimentally shown that the initially shifted Dirac point in grapheme-on-dielectric devices can be brought to zero by illuminating the samples with UV light. This is much easier to accomplish compared to the common procedure of annealing at high temperature. Internal photoemission is concluded to be responsible for the observed effect.     

Dissipative quantum hall effect in graphene near the Dirac point

We report on the unusual nature of the nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counterpropagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho(xx) > or approximately h/e(2), in striking contrast to rho(xx) behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho(xy) and rho(xx) and a smeared zero Hall plateau in sigma(xy), in agreement with experiment. The existence of gapless edge states puts stringent constraints on possible theoretical models of the nu=0 state.     

Carrier relaxation in epitaxial graphene photoexcited near the Dirac point

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 to 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical-phonon frequency; however, owing to the presence of hot carriers, optical-phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.     

Quantum Hall states near the charge-neutral Dirac point in graphene

We investigate the quantum Hall (QH) states near the charge-neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors nu=+/-1 depend only on the perpendicular component of the field with respect to the graphene plane, indicating that they are not spin related. A nonlinear magnetic field dependence of the activation energy gap at filling factor nu=1 suggests a many-body origin. We therefore propose that the nu=0 and +/-1 states arise from the lifting of the spin and sublattice degeneracy of the n=0 Landau level, respectively.     

Tunneling of Dirac fermions through magnetic barriers in graphene

We have studied the tunneling of Dirac fermions through magnetic barriers in graphene. Magnetic barriers are produced via delta function-like inhomogeneous magnetic fields in which Dirac fermions in graphene experience the tunneling barrier in the real sense in contrast to Klein paradox caused by electrostatic barriers. The transmission through the magnetic barriers as functions of incident energy and angle of incoming fermions shows characteristic oscillations associated with tunneling resonances. We have also found the confined states in the magnetic barrier region which turn out to correspond to the total internal reflection in the usual optics.     

Fractional quantum Hall States of Dirac electrons in graphene

We have investigated the fractional quantum Hall states of Dirac electrons in a graphene layer in different Landau levels. The relativistic nature of the energy dispersion relation of electrons in graphene significantly modifies the interelectron interactions. This results in a specific dependence of the ground state energy and the energy gaps for electrons on the Landau-level index. For the valley-polarized states, i.e., at nu=1/m, m being an odd integer, the energy gaps have the largest values in the n=1 Landau level. For the valley-unpolarized states, e.g., for the 2/3 state, the energy gaps are suppressed for n=1 as compared to those at n=0. For both n=1 and n=0, the ground state of the 2/3 system is fully valley-unpolarized.     

Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

Dynamical merging of Dirac points in the periodically driven Kitaev honeycomb model

We study the effect of a half wave rectified sinusoidal electromagnetic (EM) wave on the Kitaev honeycomb model with an additional magneto-electric coupling term arising due to induced polarization of the bonds. Within the framework of Floquet analysis, we show that merging of a pair of Dirac points in the gapless region of the Kitaev model leading to a semi-Dirac spectrum is indeed possible by externally varying the amplitude and the phase of the EM field.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.