Deposition of sputtered iridium oxide—Influence of oxygen flow in the reactor on the film properties

Thin films of iridium oxide have been deposited by reactive magnetron sputtering. The influence of oxygen partial pressure in the sputtering plasma on the composition, surface structure and morphology of the films has been studied by XRD, SEM and AFM analysis. An optimal combination of sputtering parameters yields stable microporous amorphous films with highly extended fractal surface. The electrochemical properties of these films have been investigated in view of their application as catalysts for water splitting, using the electrochemical techniques of cyclovoltammetry, electrochemical impedance spectroscopy, and steady state polarization. The SIROFs have shown an excellent electrochemical reversibility and a high catalytic activity toward the oxygen evolution reaction in 0.5 M H₂SO₄. A current density of 150 mA cm⁻² at potential of 1.7 V (versus Ag/AgCl) has been obtained at catalyst load of only 100 μg cm⁻². These results combined with the established long-term mechanical stability of the sputtered iridium oxide films (SIROFs) proved the advantages of the reactive magnetron sputtering as simple and reliable method for preparation of catalysts with precisely controlled composition, loading, and surface characteristics.     

Some properties of indium-tin oxide films

Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.     

溅射气压对非晶Hg1-xCdx Te薄膜微观结构和化学组分的影响（英文）

采用射频磁控溅射制备了非晶态结构的Hg1-xCdxTe薄膜,并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明,溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大,其生长速率逐渐降低。当溅射气压高于1.1 Pa时,薄膜XRD图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,具有明显的非晶态特征;当溅射气压小于1.1 Pa时,XRD谱表现为多晶结构。另外,随着溅射气压的增加,薄膜表面粗糙度逐渐减小,而且溅射气压对薄膜组成的化学计量比有明显影响,当溅射气压为1.1 Pa时,薄膜中Hg的组分比最低,而Cd组分比最高。     

Studies of thin FeAlN films prepared by different techniques

The microstructure, morphology, and magnetic properties of FeAlN films deposited by reactive rf magnetron sputtering with subsequent treatment by three techniques, namely, in situ, ex situ (with the sputtering and annealing processes separated), and thermal crystallization of amorphous alloys, have been studied. FeAlN films prepared by the ex situ technique exhibit the best soft magnetic characteristics. Thermal crystallization of amorphous alloys produced films with properties having the highest thermal stability. Films 800-to 1000-nm thick were found to have the best soft magnetic properties. The dependences of the properties of FeAlN films on nitrogen content and annealing temperature were established. The conditions favoring the preparation of thin nanostructured FeAlN films featuring the best soft magnetic characteristics (saturation induction B _S = 1.8 T, coercivity H _C = 1.2 Oe, magnetic susceptibility μ₁ (1 MHz) = 3400) were determined.     

Study of hydrogenated amorphous silicon nitride films prepared by RF magnetron sputtering

Hydrogenated amorphous silicon nitride films have been deposited by the rf magnetron sputtering method with non-stoichiometric and stoichiometric compositions using a poly-Si target and a mixture of Ar, H₂ and N₂ as the sputtering gas. Data on optical and infrared absorption, electrical conductivity, breakdown voltage, capacitance measurements and thermal evolution of hydrogen have been presented as a function of nitrogen concentration in the films, especially in the stoichiometric region of composition. Attempts have been made to identify the roles of hydrogen and nitrogen in determining the electrical and optical properties and thermal stability exhibited by the films. Properties relevant for device application of the material have been shown to be comparable to those obtained by glow discharge or electron cyclotron resonance plasma chemical vapour deposition methods of deposition. RF magnetron sputtering has therefore been suggested as a viable alternative to the more widely adopted CVD methods for device applications of silicon nitride, where the use of hazardous process gases can be avoided.     

Crystal structure and tribological properties of molybdenum disulfide films prepared by magnetron sputtering technology

Molybdenum disulfide (MoS₂) is widely used in practice due to its excellent lubricating properties. However, research on the tribological properties of magnetron sputtering for depositing MoS₂ films remains limited. Herein, the tribological properties of MoS₂ films were investigated in detail through a series of characterization and friction coefficient tests. MoS₂ films were deposited onto silicon substrates by magnetron sputtering under different radio-frequency powers (P_rf). With increased P_rf, the crystallinity of the films gradually increases, whereas the friction coefficient initially decreases and then increases. P_rf also affects the chemical composition, surface morphology, and grain size of MoS₂ films. At P_rf = 300 W, the film surface is dense and smooth, the grain distribution is uniform. Moreover, the films have superior tribological properties and low friction coefficient, which can be attributed to the weak van der Waals force among MoS₂ layers and the microscopic morphology of the films. All these results indicate that by reasonably controlling the preparation parameters, MoS₂ films with excellent tribological properties can be prepared by magnetron sputtering.     

Characterization of tungsten silicide films from a cold-pressed,vacuum-sintered composite target

Thin tungsten silicide films were deposited onto Si(100) wafers from a cold-pressed, vacuum- sintered composite target in a Varian 3180 sputtering system. The films were annealed in a Varian IA-200 rapid isothermal annealer, resulting in high-quality films of ±5% thickness uniformity and a low resistivity of 45 μΩcm. Variation of the film composition is observed when depositing the films with heated or voltage-biased substrates. We conclude that the historical problems associated with composite target preparation of sputtered silicides, i.e., low purity and poor mechanical integrity of the target, have been overcome.     

Dielectric properties of thin PbTiO<Subscript>3</Subscript> films

The electrophysical properties and phase composition of thin lead titanate films prepared on various substrates by layer-by-layer magnetron sputtering of metals followed by annealing have been studied. The main parameters of the metal-ferroelectric film-metal multilayer structures, namely, the spontaneous polarization, coercive field, and permittivity, were studied for various substrate types and electrode materials. The conditions favorable for the formation of PbTiO₃ films that are similar in stoichiometry and phase composition were established.     

射频磁控溅射法制备SnS_2薄膜结构和光学特性的研究

采用射频磁控溅射法溅射SnS_2靶,在玻璃基片上以不同射频功率和氩气压强制备一系列薄膜样品,研究了不同工艺条件对薄膜特性的影响。利用X射线衍射(XRD)和拉曼光谱(Raman)对薄膜样品的晶体结构和物相进行表征分析。利用X射线能量色散谱(EDS)、紫外-可见-近红外分光光度计(UV-Vis-NIR)对SnS_2薄膜的化学组分、光学特性等进行测试,计算或分析了SnS_2薄膜样品的组分原子比、光学常数和光学带隙。结果表明:制备SnS_2薄膜的最佳工艺条件为射频功率60 W、氩气压强0.5 Pa。在该条件下,所制备的SnS_2薄膜沿(001)晶面择优取向生长,可见光透过率和折射率较高,消光系数较小,直接带隙为2.81 e V。在此基础上,进一步制备了n-SnS_2/p-Si异质结器件。器件具有良好的整流特性及弱光伏特性,反向光电流随光照强度的增加而增大。器件的光电导机制是由SnS_2禁带中陷阱中心的指数分布所控制。     

反应溅射氧化锌薄膜的结构特点及性质

以金属Zn(纯度为99.99%)作为靶材,采用离子束反应溅射法在玻璃衬底上溅射沉积了一系列ZnO薄膜样品。通过对薄膜样品X射线衍射(XRD)谱的分析,发现尽管溅射条件不同,但是ZnO薄膜只沿(0002)晶面取向生长。衬底温度和溅射气体的氧分压对薄膜沿c轴取向生长有影响,其中衬底温度的影响较明显。溅射过程中发现衬底温度为360℃最适合(0002)晶面的生长,在此温度下溅射获得了完全沿c轴取向生长且衍射峰最强的ZnO薄膜。室温下测量了ZnO薄膜的发射光谱,发现薄膜在紫外区(364nm附近)、蓝绿区(470nm附近)有较强的发光峰,在紫光区(398nm附近)、蓝光区(452nm附近)和红外区(722nm附近)有较弱的发光峰。ZnO薄膜在空气中退火,对薄膜的结构、发光和电学性质都有一定影响。合适的退火温度可以促进薄膜沿c轴的取向生长;退火后ZnO多晶薄膜的晶粒比未退火的略大;退火使部分发光峰的位置发生偏移并使薄膜的发光强度增强;退火使薄膜的电阻率显著增大,薄膜的电阻率随氧分压的增大而增大。     

Ce∶YIG石榴石薄膜制备条件对磁光性能的影响

提出一种新的能带理论模型,讨论Ce替代YIG石榴石薄膜的制备条件对其磁光性能及光吸收的影响。该模型在能带理论的基础上引入了氧空位概念,可以用来解释Ce替代石榴石薄膜制备时,溅射气氛的改变对薄膜中Ce元素价态的影响。而Ce元素价态将直接影响到Ce∶YIG薄膜的磁光性能。此外,当晶格中存在过量氧空位时,会导致部分Fe3+被还原成Fe2+,使得薄膜的光吸收显著增大。     

溅射钆钴合金薄膜的磁性

用射频溅射的方法制备得的钆钴膜具有垂直于膜面的单轴各向异性。电子衍射结果表明薄膜是非晶态的。电子探针分析证明钆和钴的“混合”是均匀的。用极向克尔效应观察了样品的磁畴,并测量了相应的磁滞迴线;发现在一定的工艺条件下,制备得的样品,在退磁状态呈现条状畴,并在一合适的外磁场作用下能转变为磁泡。     

Optical,electrical, structural and microstructural characteristics of rf sputtered ITO films developed for art protection coatings

Transparent and conductive tin-doped indium oxide (ITO) films have been prepared by rf sputtering in an Ar and Ar+O₂ gas mixture, both with and without additional substrate heating. The influence of both deposition conditions and post-annealing treatment on optical, electrical, structural and microstructural properties of the ITO films has been investigated. The optical constants have been calculated in the range 320–2500 nm using a combination of several theoretical models. A schematic diagram for the film properties change versus composition has been proposed in terms of a generalized parameter characterising the energy efficiency of the film formation. The deposition conditions and the optical and electrical properties of the films have been optimized with respect to the requirements for their application in art protection coatings. PACS 78.66-w; 68.55.Jk; 81.15.Cd; 81.40-z     

Magnetic properties of anisotropic Pr–Fe–B films with different deposition rates and pressures

Anisotropic Pr–Fe–B films with hard magnetic properties have been prepared by DC magnetron sputtering on heated Si (100) substrates. The influences of thickness, deposition rate and sputtering gas pressure on the magnetic properties of Pr–Fe–B films were investigated. It is found that the magnetic properties are sensitive to deposition rate and sputtering gas pressure. High deposition rate and argon pressure result in a high coercivity and a low remanence.     

直流溅射法制备电致变色WO3膜

采用WO3陶瓷靶直流溅射制作了电致变色膜.介绍了制膜工艺.分析测试表明,膜有无定形结构;除有正常成分WO3外,还含有来自衬底及反应室内的微量杂质.电致变色谱响应特性和电化学特性的测量证明,膜的电色活性良好.还对实验结果作了理论分析.     

直流溅射法制备电致变色WO_3膜

采用ＷＯ３陶瓷靶直流溅射制作了电致变色膜．介绍了制膜工艺．分析测试表明，膜有无定形结构；除有正常成分ＷＯ３外，还含有来自衬底及反应室内的微量杂质．电致变色谱响应特性和电化学特性的测量证明，膜的电色活性良好．还对实验结果作了理论分析．     

Properties of ITO films prepared by rf magnetron sputtering

Recently, a detailed study of the properties of ITO thin films deposited under various preparation conditions using the rf magnetron sputtering technique (from ITO target in pure Ar gas) has been undertaken in our laboratory. The effect of substrate temperature has been studied in a previous paper. Here the results of a study of the structural, electrical and optical properties of the ITO films with different thickness are presented. The figure of merit for the films, which is a measure of the quality of the films as transparent conductive layers for photovoltaic applications, has been evaluated.     

直流溅射电致变色NiOxHy膜的研究

采用直流溅射Ni(OH)2粉末压实靶制作了电致变色膜.介绍了制膜工艺,用XRD谱研究了着色前、后膜的结构,XPS谱研究Ni、O的结合.谱响应特性和电化学特性表明,膜的电色活性良好.     

Anomalous losses of lead in crystallization of the perovskite phase in thin PZT films

A study has been performed of the mechanisms underlying evolvement of excess lead oxide from lead zirconate titanate films grown ex-situ in two different regimes by magnetron sputtering. In the first case, crystallization of the dense phase of perovskite passed through an intermediate “porous” phase, and in the second, straight through. It has been found that the anomalously large losses of lead are caused by migration of lead over interphase porous boundaries to the surface of the films and depend strongly on the regime of film preparation. The unusual variation of film composition with increasing annealing temperature has been discussed.     

直流磁控反应溅射法制备的钒氧化物薄膜及其光谱研究

用直流磁控反应溅射法和不同基底温度下在玻璃底上沉积微纳结构的氧化钒薄膜,通过X射线衍射、电子扫描显微镜、UV-Vis透射、红外和拉曼光谱研究了薄膜的结构特性.在低温下制备的薄膜表现出高的光学透过特性,在基底温度低于200℃下制备的薄膜具有无定形结构,而在基底温度高于200℃时制备的薄膜具有多晶结构.薄膜的光学参数使用经...